JPH02288357A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02288357A JPH02288357A JP1109614A JP10961489A JPH02288357A JP H02288357 A JPH02288357 A JP H02288357A JP 1109614 A JP1109614 A JP 1109614A JP 10961489 A JP10961489 A JP 10961489A JP H02288357 A JPH02288357 A JP H02288357A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- synthetic resin
- metal piece
- chip
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野コ
本発明は、半導体装置に係り、パッケージのハンダ付時
の熱衝撃の防止、及びパッケージの熱放散性の改善に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and relates to prevention of thermal shock during soldering of packages and improvement of heat dissipation properties of packages.
［従来の技術］
従来の半導体装置は、第３図に示す様に、半導体装置１
はプリント基板２のパターン３にハンダペースト４を介
して、熱源５０輻射熱６でハンダ付されていた。[Prior Art] As shown in FIG. 3, a conventional semiconductor device has a semiconductor device 1.
was soldered to the pattern 3 of the printed circuit board 2 via the solder paste 4 using a heat source 50 and radiant heat 6.
又、第４図は、半導体装置１をプリント基板２にハンダ
付した後の状態である。半導体装置１や、抵抗７．コン
デ・ンサ８などが高密度に実装されている。Further, FIG. 4 shows the state after the semiconductor device 1 is soldered to the printed circuit board 2. Semiconductor device 1, resistor 7. Capacitors 8, etc. are mounted in high density.
絞する方法が、ＴＡＢである事を特徴とする半導体装置
。A semiconductor device characterized in that a narrowing method is TAB.
［発明が解決しようとする課題］
上記の様な従来の半導体装置においては、第５図に示す
如（リフローハンダ付時、輻射熱６により、半導体装置
１が加熱され、合成樹脂１０．工０チップ１１．ダイパ
ッド１２の熱膨張差による応力でクラック１３が発生し
、ワイヤ１４を断線させたり、合成樹脂の表面にまで到
達し、水分侵入の原因になり、信頼性が低下した。[Problems to be Solved by the Invention] In the conventional semiconductor device as described above, as shown in FIG. 11. Cracks 13 were generated due to stress due to the difference in thermal expansion of the die pad 12, causing the wires 14 to break or reaching the surface of the synthetic resin, causing moisture intrusion and lowering reliability.
又、ハンダ付後の、工０チップ１１の動作状態において
、合成樹脂１０は、熱伝導率が低いため、工０チップか
ら発生する熱が放散せず、半導体装置１は非常に高温に
なり、ＩＣチップの誤動作、特性低゛下、破損の原因と
なった。In addition, in the operating state of the 0-chip 11 after soldering, the synthetic resin 10 has a low thermal conductivity, so the heat generated from the 0-chip is not dissipated, and the semiconductor device 1 becomes extremely high temperature. This caused IC chip malfunction, deterioration of characteristics, and damage.
最近の工０パターンの微細化、又は、工０チップの高速
動作化に伴ない、特にこの問題が太き（なってきた。This problem has become particularly serious with the recent miniaturization of process patterns and higher speed operation of process chips.
この発明は上記の様な問題点を解決すべ（なされたもの
で、リフローハンダ付時のバクケージクラックをなりシ
、ワイヤ断線や、信頼性の低下を防止する。さらに、半
導体装置の熱放散性を改善し、ＩＣチップの誤動作、特
性の低下、破損の防止をする事を目的としたものである
。This invention has been made to solve the above-mentioned problems, and eliminates back cage cracks during reflow soldering, prevents wire breakage, and reduces reliability.Further, it improves heat dissipation of semiconductor devices. The purpose is to improve the performance of IC chips and prevent malfunctions, deterioration of characteristics, and damage to IC chips.
［課題を解決するための手段］
本発明の半導体装置は、合成樹脂の表面に金属片を嵌口
にて取り付けることを特徴とする。[Means for Solving the Problems] The semiconductor device of the present invention is characterized in that a metal piece is attached to the surface of a synthetic resin using a fitting.
［作用コ
この発明において、合成樹脂の表面と、金属片との間に
スキ間を設けて取り付ければ、その空気の層が断熱層に
なり、半導体装置が急激に温度上昇する事がなくなり、
合成樹脂部のクランクは防止できる。[Operations] In this invention, if a gap is provided between the surface of the synthetic resin and the metal piece and the metal piece is attached, the air layer becomes a heat insulating layer, preventing the semiconductor device from rapidly rising in temperature.
Crank of the synthetic resin part can be prevented.
又、ハンダ付後、金属片を押す事によりぼ合部をスライ
ドさせ、合成樹脂と密着させると、金属片の熱伝導率が
高い為に、半導体装置内に発生した熱は、金属片を通じ
、大気中に放散され、半導体装置内の温度上昇を防止し
、ＩＣチップの誤動作、特性の低下、破損することがな
（なった。In addition, after soldering, when the metal piece is pressed to slide the recessed part and make it come into close contact with the synthetic resin, the heat generated in the semiconductor device is transferred through the metal piece, as the metal piece has a high thermal conductivity. It is dissipated into the atmosphere and prevents a rise in temperature within the semiconductor device, preventing malfunction, deterioration of characteristics, and damage to the IC chip.
［実施例コ
第１図は本発明の一実施例を示す断面図である。図にお
いて、工Ｃチップ１１は、ダイパッド１２上に搭載され
、リード１５とワイヤ１４にて接続され、合成樹脂１０
で樹脂封止されている。[Example 1] FIG. 1 is a sectional view showing an example of the present invention. In the figure, a C-chip 11 is mounted on a die pad 12, connected to leads 15 by wires 14, and is connected to a synthetic resin 10.
It is sealed with resin.
金属片２０は嵌合部２２にて、空気層２１ができる様に
、合成樹脂、１０に取付けられている。The metal piece 20 is attached to the synthetic resin 10 at a fitting part 22 so as to form an air layer 21.
以上の様な構成において、半導体装置１をプリント基板
２にハンダ付する時、輻射熱６により、加熱されても、
空気層２１にかあることにより、半導体装置１が急激に
温度上昇する事がな（なり、材料間の熱膨張差による応
力で、クラックが発生することはなくなる。In the above configuration, when the semiconductor device 1 is soldered to the printed circuit board 2, even if it is heated by the radiant heat 6,
The presence of the air layer 21 prevents the semiconductor device 1 from rapidly rising in temperature (and prevents cracks from occurring due to stress due to differences in thermal expansion between materials).
ここではりフローハンダ付で説明したが、当然ペイパー
７エイズのハンダ付でも良い。Here, we have explained using flow soldering, but of course it is also possible to use Paper 7 AIDS soldering.
又、第２図に示す様に、ハンダ付後金属片を押付ける事
により合成樹脂１０と、金属片２０を密着させると熱が
合成樹脂から金属片に直接伝わり、半導体装置の熱放散
性が改善される。Furthermore, as shown in FIG. 2, when the synthetic resin 10 and the metal piece 20 are brought into close contact by pressing the metal piece after soldering, heat is directly transmitted from the synthetic resin to the metal piece, improving the heat dissipation properties of the semiconductor device. Improved.
又、第６図に示す様に、金属片２０に、フィン３０を設
けることにより、この効果は、さらに増すものである。Further, as shown in FIG. 6, this effect is further enhanced by providing fins 30 on the metal piece 20.
又、工Ｃチップとリードとの接続がＴＡ１３方式であっ
ても良い。Further, the connection between the C-chip and the leads may be made using the TA13 method.
［発明の効果］
以上の様に本発明は、工０チップを合成樹脂で封止して
なるサーアイスマウント用導体装置において、樹脂封止
後合成樹脂の表面に、金属片を嵌口にて取付ける事によ
り、空気層があるとハンダ付時、半導体装置の急激な温
度上昇をおさえ、材料間の熱膨張差による応力で、クラ
ックが発生がな（なり、ワイヤ断線、信頼性の低下を防
止するという効果がある。[Effects of the Invention] As described above, the present invention provides a conductor device for a ceramic mount made by sealing an engineered chip with a synthetic resin. By installing the device, the presence of an air layer suppresses the rapid temperature rise of the semiconductor device during soldering, prevents cracks from occurring due to stress due to the difference in thermal expansion between materials, and prevents wire breakage and reduced reliability. It has the effect of
さらに、ハンダ付後、金属片を押し金屑片と合成樹脂を
密着させることにより、熱放散性を改善し、ＩＣチップ
の誤動作、特性低下、破損を防止することが可能になる
という効果がある。Furthermore, after soldering, by pressing the metal piece and bringing the metal scraps and synthetic resin into close contact, heat dissipation is improved and it is possible to prevent IC chip malfunction, deterioration of characteristics, and damage. .
第１図、第２図は本発明の一実施例を示す断面図、第３
図、第４図、第５図は従来の半導体装置を示す説明図、
第６図は、本発明の他の実施例を示す説明図である。
１・・・・・・・・・半導体装置
・２．１
・・・・・・・・・プリント基板
・・・・・・・・・合成樹脂
・・・・・・・・・ＩＣチップ
・・・・・・・・・グイパッド
・・・・・・・・・ワイヤ
・・・・・・・・・金属片
・・・・・・・・・空気層
・・・・・・・・・嵌口部1 and 2 are cross-sectional views showing one embodiment of the present invention, and FIG.
4 and 5 are explanatory diagrams showing conventional semiconductor devices,
FIG. 6 is an explanatory diagram showing another embodiment of the present invention. 1... Semiconductor device 2.1... Printed circuit board... Synthetic resin... IC chip...・・・・・・Guipad・・・・・・Wire・・・・・・Metal piece・・・・・・Air layer・・・・・・・・・Fitting part
Claims (3)
ドフレームの複数のリードとをそれぞれ電気的に接続し
、これらを合成樹脂で封止してなるサーフエィスマウン
ト用半導体装置において、樹脂封止後合成樹脂の表面に
、金属片を嵌口にて取り付ける事を特徴とする半導体装
置。(1) In a surface mount semiconductor device in which a plurality of bonding pads of an IC chip and a plurality of leads of a lead frame are electrically connected and sealed with a synthetic resin, the synthesis after resin sealing is performed. A semiconductor device characterized by attaching a metal piece to the surface of a resin using a fitting.
る方法が、ワイヤボンディングである事を特徴とする半
導体装置。(2) A semiconductor device characterized in that the method for electrically connecting the bonding pad and the lead is wire bonding.
する方法が、ＴＡＢである事を特徴とする半導体装置。(3) A semiconductor device characterized in that the method for electrically connecting the bonding pad and the lead is TAB.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1109614A JPH02288357A (en) | 1989-04-28 | 1989-04-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1109614A JPH02288357A (en) | 1989-04-28 | 1989-04-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02288357A true JPH02288357A (en) | 1990-11-28 |
Family
ID=14514762
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1109614A Pending JPH02288357A (en) | 1989-04-28 | 1989-04-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02288357A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03256347A (en) * | 1990-03-06 | 1991-11-15 | Fujitsu Ltd | Semiconductor device |
| WO2014064806A1 (en) * | 2012-10-25 | 2014-05-01 | 三菱電機株式会社 | Semiconductor device |
-
1989
- 1989-04-28 JP JP1109614A patent/JPH02288357A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03256347A (en) * | 1990-03-06 | 1991-11-15 | Fujitsu Ltd | Semiconductor device |
| WO2014064806A1 (en) * | 2012-10-25 | 2014-05-01 | 三菱電機株式会社 | Semiconductor device |
| CN104756248A (en) * | 2012-10-25 | 2015-07-01 | 三菱电机株式会社 | Semiconductor device |
| JPWO2014064806A1 (en) * | 2012-10-25 | 2016-09-05 | 三菱電機株式会社 | Semiconductor device |
| US9601408B2 (en) | 2012-10-25 | 2017-03-21 | Mitsubishi Electric Corporation | Semiconductor device |
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