JPH0230443Y2 - - Google Patents

Description

[Detailed Description of the Invention] A. Purpose of the Invention [Field of Industrial Application] The present invention relates to improvement of a high frequency sputtering device.

[Conventional technology]

Figure 2 is a schematic longitudinal sectional front view showing the structure of a conventional electromagnetic buried high frequency sputtering device.
An anode electrode 2 and a cathode (target) electrode 3 are installed inside a low vacuum chamber 1 of about 10 ^-2 Torr,
On the surface of the former 2 is a substrate 4 on which a thin film is to be deposited, and on the surface of the latter 3 is a material 5 (glass, etc.) to be deposited.
electrical material such as alumina or metal material).
Both electrodes 2 and 3 are supplied with high-frequency power from a high-frequency power source 6 to perform vacuum evaporation, but in order to improve sputtering from the evaporation material 5, an electromagnet 7 is buried below the cathode electrode 3. Excited with direct current.

Although the excitation wire ring of the electromagnet 7 and the cathode electrode 3 are insulated, a high frequency voltage is induced in the excitation wire ring, so a blocking wire ring 8 is connected between the DC power source 9 and the DC power source. 9 to protect against leakage of high frequency power.

[Problem that the invention attempts to solve]

In order to strengthen the collision of ions with the vapor deposition material and improve sputtering, it is better to place the electromagnet 7 as close to the cathode electrode 3 as possible. However, when high frequency power is applied, a voltage in which a DC bias voltage and a high frequency voltage are superimposed appears on the surface of the cathode electrode 3 due to the rectification effect. FIG. 3 shows this state. Even if the output voltage of the power source 6 is the same as shown in FIG. , d, a DC bias voltage (DC in the figure) is generated, so the high frequency peak voltage increases by this DC amount.
When the high frequency power becomes about 5kW, the DC bias voltage also becomes about 3.5hV, so the peak voltage reaches more than 7kV.

As a result, the insulation between the excitation wire ring of the electromagnet 7 and the cathode electrode 3 is broken, and accidents often occur in which the excitation wire ring of the electromagnet 7 is burnt out. As a solution to this problem, some attempts have been made to directly connect the excitation wire ring of the electromagnet 7 and the cathode electrode 3, but this is dangerous because DC voltage is applied to the electromagnet power supply circuit. Also, it becomes expensive because each part has to have high withstand voltage.

The present invention aims to solve the above-mentioned problems in conventional high frequency sputtering equipment.

B. Structure of the invention [Means for solving the problems] In the above-mentioned known electromagnetic buried type high frequency sputtering device, as shown in FIG. At the same time, the load electrode 3 to which high-frequency power is supplied and the excitation wire ring of the electromagnet 7 are connected by a capacitor 10 to insulate them from a direct current perspective, and are short-circuited from a high-frequency perspective by a capacitor 11. It is something that

[Effect]

Due to the connection of the capacitor 10, the load electrode 3 and the excitation wire ring of the electromagnet 7 have the same potential in terms of high frequency.
Since direct current insulation is maintained, the withstand voltage of the electromagnet power supply circuit can be lowered. In addition, in terms of high frequency, the blocking wire ring 8 and the capacitor 11 inserted as appropriate
Its influence can be minimized by the action of

〔Example〕

In the embodiment shown in Fig. 1, when applying high frequency power of 13.56MHz and 5kW, there is a withstand voltage of 500PF between the cathode electrode 3 and the excitation wire ring of the electromagnet 7.
A high frequency capacitor 10 of 7 kV was used, and a shunt capacitor 11 with a working voltage of 150 V was used as the short-circuit capacitor 11.

C. Effects of the invention Since the high frequency sputtering device of the invention has the above-mentioned configuration, the simple configuration of just connecting the capacitors 10 and 11 solves the problem of burnout of the excitation wire ring of the electromagnet 7. improved,
This has the effect of allowing accident-free driving to continue.

[Brief explanation of drawings]

Fig. 1 is a longitudinal front view of the high frequency sputtering device of the present invention, Fig. 2 is a longitudinal front view of a conventional high frequency sputtering device with embedded electromagnet, and Fig. 3 is a relationship diagram showing changes in cathode electrode surface voltage with respect to power output high frequency voltage. . 1 is a vacuum chamber, 2 is an anode electrode, 3 is a load electrode (cathode electrode), 4 is a substrate, 5 is a material to be deposited, 6 is a high frequency power source, 7 is an electromagnet, 8 is a high frequency blocking wire, 9 is an electromagnet 10 is a high frequency capacitor, and 11 is a bypass capacitor.

Claims (1)

[Scope of utility model registration request] In a high-frequency sputtering device in which an electromagnet is buried under one load electrode in a vacuum chamber, a high-frequency blocking wire is connected between the excitation wire of the electromagnet and its power source, and high-frequency power is supplied. A high frequency sputtering device in which the load electrode and the excitation wire ring of the electromagnet are connected by a capacitor to be insulated in terms of direct current, and short-circuited in terms of high frequency using the capacitor.