JPH0231125U - - Google Patents
Info
- Publication number
- JPH0231125U JPH0231125U JP10875688U JP10875688U JPH0231125U JP H0231125 U JPH0231125 U JP H0231125U JP 10875688 U JP10875688 U JP 10875688U JP 10875688 U JP10875688 U JP 10875688U JP H0231125 U JPH0231125 U JP H0231125U
- Authority
- JP
- Japan
- Prior art keywords
- doping
- ion
- ion generation
- semiconductor wafer
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004949 mass spectrometry Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の第１の実施例を示す概略図、
第２図は本考案の第２の実施例を示す概略図、第
３図は従来例を示す概略図である。
１０１，１１０，２０１，２１１…イオン発生
源、１０２，１０９，２０２，２１０…質量分析
部、１０３，１０８，２０３，２０９…走査部、
１０５，２０５…半導体ウエーハ、１０６，２０
６…半導体ウエーハホルダ、１０４，１０７，２
０４，２０８…イオンビーム。
FIG. 1 is a schematic diagram showing a first embodiment of the present invention;
FIG. 2 is a schematic diagram showing a second embodiment of the present invention, and FIG. 3 is a schematic diagram showing a conventional example. 101,110,201,211...Ion source, 102,109,202,210...Mass spectrometry section, 103,108,203,209...Scanning section,
105,205...Semiconductor wafer, 106,20
6...Semiconductor wafer holder, 104, 107, 2
04,208...Ion beam.
Claims (1)
ン注入装置において、ドーピングするイオンを発
生させる複数のイオン発生源と、各イオン発生源
からのイオンビームを半導体ウエーハ上にドーピ
ングする機構とを有することを特徴とするイオン
注入装置。 An ion implantation apparatus for doping semiconductor wafers with impurities, characterized by having a plurality of ion generation sources for generating doping ions, and a mechanism for doping the semiconductor wafer with ion beams from each ion generation source. Injection device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10875688U JPH0231125U (en) | 1988-08-19 | 1988-08-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10875688U JPH0231125U (en) | 1988-08-19 | 1988-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0231125U true JPH0231125U (en) | 1990-02-27 |
Family
ID=31344390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10875688U Pending JPH0231125U (en) | 1988-08-19 | 1988-08-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0231125U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140101656A (en) * | 2013-02-11 | 2014-08-20 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Processing apparatus, ion implantation apparatus and ion implantation method |
-
1988
- 1988-08-19 JP JP10875688U patent/JPH0231125U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140101656A (en) * | 2013-02-11 | 2014-08-20 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Processing apparatus, ion implantation apparatus and ion implantation method |
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