JPH0241209A - Dividing method for substrate of semiconductor or the like - Google Patents

Dividing method for substrate of semiconductor or the like

Info

Publication number
JPH0241209A
JPH0241209A JP63193857A JP19385788A JPH0241209A JP H0241209 A JPH0241209 A JP H0241209A JP 63193857 A JP63193857 A JP 63193857A JP 19385788 A JP19385788 A JP 19385788A JP H0241209 A JPH0241209 A JP H0241209A
Authority
JP
Japan
Prior art keywords
wafer
roller
substrate
thin plate
kerf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63193857A
Other languages
Japanese (ja)
Inventor
Kazumi Takahata
高畠 和美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP63193857A priority Critical patent/JPH0241209A/en
Publication of JPH0241209A publication Critical patent/JPH0241209A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0029Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rotating

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To satisfactorily perform the division of a substrate by so placing a thin plate that the face formed with the cut grooves of the substrate is opposed to a thin plate having specific Young's modulus, and pressing the cut groove top not formed with the cut groove of the substrate by a pressing member. CONSTITUTION:Many chips 2 are formed in an arranging manner, and an adhesive tape 6 adheres to the other main face having no cut groove 3 of a wafer 1 formed with lateral and longitudinal cut grooves 3 on one main face. Then, the wafer 1 is so disposed that the main face with the grooves 3 is disposed at a protective sheet 5 side through the sheet 5 on a thin plate 12 having 6X10<11> dyn/cm<2> or more of Young's modulus and the direction of the grooves 3 coincide with the extending direction of a roller 15. When the roller 15 is rotatably moved on the upper face of the tape 6, the wafer 1 is bent at a thin part 8 as a fulcrum, and collapsed at this part. The wafer 1 is rotated at 90 deg., and the roller 15 is moved. Then, the wafer 1 can be divided into many chips 2.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板やセラゼツク基板等に切溝を形成し
、この切溝に沿って基板を分割する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming kerfs in a semiconductor substrate, ceramic substrate, etc. and dividing the substrate along the kerfs.

〔従来の技術〕[Conventional technology]

半導体装置の製造においては、まず第6図に示す半導体
基板Cウェハ)1を用意する。ウニ/% jには拡散等
によってp形像域とn形像域が形成され、多数個の半導
体素子C以下チップと呼ぶ)2が縦横に配列されている
。ウエト1の一刀の主面は縦横の切溝3によって基盤の
目状に区画化さtている。切溝3はテップ2に沿って設
けられており、この切#I#3でウェハ1を切断するこ
とで、ウェハ布は多数個のチップ2VC分割される。
In manufacturing a semiconductor device, first a semiconductor substrate (C wafer) 1 shown in FIG. 6 is prepared. A p-type image area and an n-type image area are formed in the urchin/% j by diffusion or the like, and a large number of semiconductor elements C (hereinafter referred to as chips) 2 are arranged vertically and horizontally. The main surface of the sword of Uet 1 is divided into sections by vertical and horizontal kerfs 3 in the shape of a base. A cut groove 3 is provided along the step 2, and by cutting the wafer 1 with this cut #I#3, the wafer cloth is divided into a large number of chips 2VC.

第4図は従来のウェハ1の分割方法を示す。まず、内示
のように1弾力性を有するゴムマッドステージ4の上に
保護紙5を置き、粘着チーブ6に貼り付けられたウェハ
1を保護紙5の±に載置する。なお、粘着テープ6はウ
ェハ1の切11$3の設けらnていない主面に予め接着
さrLる。次に、ローラー7を粘着テープ6上で横方向
の切#13の方向に回転移動させる。このとき、ローラ
ー7は粘着テープ6、ウェハ1.保護紙5をゴムマット
ステーツ4に対して押圧しながら移動する。こj−1[
より、ウェハ1は縦方向の切溝3の設けらt″Lfc部
分子俵断されて?J数の細条に分割さnる。次にウェハ
1を90度回転させてローラー7を縦方向の切1113
の方向に移動する。これにより、ウェハ1は横方向の切
溝3が設けらt″した部分で破断される。
FIG. 4 shows a conventional method of dividing the wafer 1. First, a protective paper 5 is placed on a rubber mud stage 4 having an elasticity of 1 as shown in FIG. Note that the adhesive tape 6 is adhered in advance to the main surface of the wafer 1 on which the cut 11$3 is not provided. Next, the roller 7 is rotated on the adhesive tape 6 in the direction of the horizontal cut #13. At this time, the roller 7 holds the adhesive tape 6, the wafer 1. The protective paper 5 is moved while being pressed against the rubber mat states 4. This j-1 [
Accordingly, the wafer 1 is cut into strips by the length t''Lfc of the longitudinal cutting grooves 3, and is divided into ? Nokiri 1113
move in the direction of As a result, the wafer 1 is broken at a portion t'' where the lateral kerf 3 is provided.

以上により、ウェハ1を多数個のチップ2に分割するこ
とができる。
As described above, the wafer 1 can be divided into a large number of chips 2.

上記のウェハ1の分割方法を更に絆しく説明すると、ウ
ェハ1の切溝3の方向に延在する円柱状の棒材から成る
ローラー7がウェハ1の切#l13が設けられた部分の
正方に位置したとき、ウェハ1は内示のよりにゴムマッ
ドステージ4に沈み込み。
To explain the above method of dividing the wafer 1 in more detail, the roller 7 made of a cylindrical bar extending in the direction of the cut groove 3 of the wafer 1 is placed squarely on the part of the wafer 1 where the cut #l13 is provided. When positioned, the wafer 1 sinks into the rubber mud stage 4 as instructed.

ローラー7の下部に位置する切溝3が押し広げら九るよ
うにして肉薄部8が曲げにより&!i断する。
The kerf 3 located at the bottom of the roller 7 is pushed out and the thin wall portion 8 is bent. I refuse.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかし、上記の方法では、ウェハ1を切溝3で確実に切
断することが難しく、特にチップ2が小面積であるとき
に割れ残り部分が生じることがあった。この理由は必ず
しも明確ではないが1次のようVc:4えられる。即ち
、ローラー7に押圧されることでゴムマッドステージ4
のローラー7の下部の部分は図示のように沈み必む。こ
のため、ローラー7の下部に位置する被破断部とその周
辺の切溝3部分とに破断力が分散されてしまうためと考
えられる。
However, with the above method, it is difficult to reliably cut the wafer 1 along the kerfs 3, and some cracks may remain, especially when the chip 2 has a small area. Although the reason for this is not necessarily clear, it can be assumed that Vc:4 is linear. That is, by being pressed by the roller 7, the rubber mud stage 4
The lower part of the roller 7 must sink as shown. This is considered to be because the breaking force is dispersed to the part to be broken located at the lower part of the roller 7 and the kerf 3 portion around it.

そこで1本発明は上記の問題を解決し、生導体基板やセ
ラばツク基板等を確実にかつ良好に分割できる方法を提
供することを目的とする。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for reliably and efficiently dividing raw conductor substrates, ceramic substrates, etc.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的をi!!成するための本発明は、基板の一万の
主面に所定の間隔で切溝を形成し、前記基板を前記切溝
に沿って破断することにより前記基板を複数の細片に分
割する方法において、ヤング率が6 X 10” dy
n 7cm”以±の薄板が架設されている基板分割装置
を用意し、前記基板の前記切溝が形成さ九ている面が前
記薄板に対向するように前記基板を前記薄板上に載置し
、前記基板の前記切溝が形成されていない面の前記切溝
の上部を押圧部材によって押圧して前記切溝に沿って&
1断することを特徴とする基板の分割方法に係わるもの
である。
i! ! The present invention provides a method for dividing the substrate into a plurality of strips by forming kerfs at predetermined intervals on 10,000 main surfaces of the substrate and breaking the substrate along the kerfs. , Young's modulus is 6 x 10” dy
Prepare a substrate dividing device on which a thin plate with a diameter of 7 cm or more is installed, and place the substrate on the thin plate so that the surface of the substrate on which the groove is formed faces the thin plate. , the upper part of the kerf on the surface of the substrate where the kerf is not formed is pressed by a pressing member, and the kerf is pressed along the kerf.
The present invention relates to a method for dividing a substrate, which is characterized by cutting the substrate into one piece.

〔作 用〕[For production]

上記発明に8ける架設された薄板は、ローラー等の押圧
部材による押圧力を切溝、L一部に集中させる働きを有
する。このため、基板の分割を良好に連成することが可
能になる。
The constructed thin plate according to the eighth aspect of the invention has the function of concentrating the pressing force from a pressing member such as a roller on a part of the kerf and L. Therefore, it becomes possible to couple the divisions of the substrate well.

〔実施例〕〔Example〕

次に、第1図〜第3図を参湘して不発明の一実施例に係
わるウェハの分割方法を説明する。
Next, a wafer dividing method according to an embodiment of the present invention will be explained with reference to FIGS. 1 to 3.

第1囚に示す本実施例で使用するウェハ分割装置11は
ステージを形成するためのステンレス製の薄1112と
、ステージ用薄板架設装置13と。
The wafer dividing device 11 used in this embodiment shown in the first example includes a thin stainless steel plate 1112 for forming a stage, and a thin plate construction device 13 for the stage.

載置台14と、押圧部材とじてのローラー15とを有す
る。ステージ用薄板架設装置13は載置台14士に固定
された4本の支持柱16と、対向配置され念2つの支持
柱16の間に摘渡され虎薄板張着用棒状部材17から成
る。ステージ用薄1!112は両端−が棒状部材17に
貼着されて、112置台14の上方で棒状部材17の相
互間に張V&されている。ローラー15は断面が円形で
あり、その直径はウェハ1のとなりあう切溝3の間隔の
約1.5〜6倍となっている。またローラー15はa−
ツー支持体18に回転自在に取付けられている。ローラ
ー支持体18は載置台14の溝19に案内されて矢印2
0で示す方向に移動自在である。なお。
It has a mounting table 14 and a roller 15 as a pressing member. The stage thin plate construction device 13 consists of four support columns 16 fixed to the mounting tables 14, and a rod-shaped member 17 for attaching the thin plate, which is placed between the two support columns 16 and arranged opposite to each other. Both ends of the stage thin film 1!112 are attached to the rod-like members 17, and stretched between the rod-like members 17 above the stage 14. The roller 15 has a circular cross section, and its diameter is about 1.5 to 6 times the distance between adjacent kerfs 3 on the wafer 1. Moreover, the roller 15 is a-
It is rotatably attached to the two support body 18. The roller support 18 is guided by the groove 19 of the mounting table 14 in the direction of arrow 2.
It is movable in the direction indicated by 0. In addition.

ローラー15の載置台14の±面からの高さは薄板12
の両端の高さ位置よりも低いところに位置する。この念
め、ローラー15が位置した部分では薄板12が下方に
押圧される。但し、薄板12は両端が棒状部材17に固
定されているため、ローラー15で押圧された部分と両
端との間で薄板12が撓むことはない。
The height of the roller 15 from the ± surface of the mounting table 14 is equal to the height of the thin plate 12.
It is located at a lower height than the height position of both ends. To ensure this, the thin plate 12 is pressed downward at the portion where the roller 15 is located. However, since both ends of the thin plate 12 are fixed to the rod-shaped member 17, the thin plate 12 will not bend between the portion pressed by the roller 15 and both ends.

次に、従来と同様に多数のチップ2が配列的に形成され
、さらに一方の主面側に縦横の切溝3が形成されたウェ
ハ1を珈備する。切溝3は周知のツーダイシング法、N
Jち高速回転する外周刃をウェハ1に当接させて形成し
たものである。次に。
Next, a wafer 1 is prepared in which a large number of chips 2 are formed in an array in the same way as in the prior art, and furthermore, vertical and horizontal grooves 3 are formed on one main surface side. Cut groove 3 is made using the well-known two-dicing method, N
It is formed by bringing a peripheral blade that rotates at high speed into contact with the wafer 1. next.

ウェハ1の切溝3が形成されていない主面に粘着テープ
6を貼り付ける。
An adhesive tape 6 is attached to the main surface of the wafer 1 on which the kerf 3 is not formed.

次に、薄板12上に保護紙5を介してウニノー11を載
置する。なお、ウニノ1の切溝3が形成された一万の主
面が保護紙5側になるようにウニ/)1を配置する。ま
たウニ/)1を縦方向に延びる切溝3の方向がローラー
15の延在方向にほぼ一致するように配置する。保護紙
5及び粘着テープ6を備えたウェハ1を配置するときに
はローラー15を棒状部材17に近い側に位置させてお
き、保護紙5及びウニノ11は薄板12のほぼ中央に配
置する。
Next, the Uninow 11 is placed on the thin plate 12 with the protective paper 5 interposed therebetween. In addition, the sea urchin/) 1 is arranged so that the main surface of the sea urchin 1 on which the kerf 3 is formed is on the protective paper 5 side. Further, the sea urchin (1) is arranged so that the direction of the longitudinally extending kerf 3 substantially coincides with the direction in which the roller 15 extends. When arranging the wafer 1 provided with the protective paper 5 and the adhesive tape 6, the roller 15 is positioned close to the rod-shaped member 17, and the protective paper 5 and the adhesive tape 11 are positioned approximately at the center of the thin plate 12.

次に、ローラー15を粘着チーブ乙の上面において回転
移動させる。このとき、ローラー15はウェハ1の縦方
向の切溝6の方向に延在し、ウェハ1の横方向の切溝6
の方向に移動させる。ローラー15の薄板12の上面か
らの高さ位置は常に一定であジ、前述のよ)に薄板12
の両端の高さ位置よりも低くなっている。したがって、
粘着テープ6、ウェハ1.保護紙5.薄板12がローラ
ー15で押圧さnで、この部分は第2図に示すよりに垂
下する。これによって、粘着チーズ6、ウェハ1.保護
紙5.薄8[12はローラー15で押圧された部分を支
点として屈曲する。ローラー15がウェハ1の肉薄s8
の正方に位置すると、ウェハ1はこの肉薄部8を支点と
して屈曲する。結果として、ウェハ1はこの肉薄部8の
部分で確実に破断する。なお、切溝3が形成されていな
い部分即ちテップ2に相当する部分は肉薄部8に比べて
肉厚となっているため、ローラー15の押圧によってク
ランク等が生じることはない。ローラー15をウェハ1
の一端から他端に移動することによりローラー15はウ
ニ/% 1の縦方向の切溝3により形成されたすべての
肉薄部8を押圧する。これにより、ウェハ1は縦方向の
切溝3の部分で破断されて、細条形状に分割される。
Next, the roller 15 is rotated on the upper surface of the adhesive tube A. At this time, the roller 15 extends in the direction of the vertical kerf 6 of the wafer 1, and the roller 15 extends in the direction of the lateral kerf 6 of the wafer 1.
move it in the direction of The height position of the roller 15 from the top surface of the thin plate 12 is always constant;
It is lower than the height position of both ends. therefore,
Adhesive tape 6, wafer 1. Protective paper5. When the thin plate 12 is pressed down by the roller 15, this portion hangs down as shown in FIG. As a result, sticky cheese 6, wafer 1. Protective paper5. Thin 8 [12 is bent using the portion pressed by roller 15 as a fulcrum. The roller 15 is the thin wall s8 of the wafer 1
When positioned squarely, the wafer 1 bends using the thin portion 8 as a fulcrum. As a result, the wafer 1 is reliably broken at this thin portion 8. Note that the portion where the kerf 3 is not formed, that is, the portion corresponding to the tip 2, is thicker than the thin portion 8, so that no cranking or the like occurs due to the pressure of the roller 15. Roller 15 to wafer 1
By moving from one end to the other, the roller 15 presses against all the thin sections 8 formed by the longitudinal grooves 3 of the sea urchin/% 1. As a result, the wafer 1 is broken at the longitudinal grooves 3 and divided into strips.

次に、ウェハ1を横方向に延びる切溝3の部分で切断す
るためにウェハ1を90度回転させて薄板12上に配置
する。即ち、横方向に延びる切溝6の方向がローラー1
5の延在方向に略一致するようにウェハ1を配置する。
Next, the wafer 1 is rotated 90 degrees and placed on the thin plate 12 in order to cut the wafer 1 along the kerf 3 extending laterally. That is, the direction of the groove 6 extending in the horizontal direction is the direction of the roller 1.
The wafer 1 is arranged so as to substantially match the extending direction of the wafer 5.

なお、細条形状に分割さrしたウェハ1は粘着テープ6
に貼着されているため、上記のようにウェハ1を回転し
ても配列がくずれてしま)ことはない。ローラー15は
ウェハ1の横方向の切@3の方向に延在し、ウェハ1の
縦方向の切溝3の方向(厳密にはウェハ1はすでに縦方
向に破断されているので破断線の方向と言える〕に移動
させる。粘着テープ6、ウニノ・1、保護紙5.薄板1
2は前述と同様にローラー15に押圧されて、ローラー
15の下部を支点として屈曲する。ローラー15がウェ
ハ1の横方向の切溝3によって形成された肉薄部8の±
方に位置すると、ウェハ1はこの肉薄部8を支点として
屈曲し、確実に破断する。ローラー15を移動して横方
向のすべての肉薄部8を押圧すればウニノ11を多数の
テップ2に分割できる。なお、粘着テープ6Vc貼着さ
れた多数のチップ2は粘着テープ6を引き伸ばすことで
容易に剥離できる。
Note that the wafer 1 divided into strips is covered with an adhesive tape 6.
Since the wafer 1 is affixed to the wafer 1, the arrangement will not be disrupted even if the wafer 1 is rotated as described above. The roller 15 extends in the direction of the lateral cut @3 of the wafer 1, and extends in the direction of the longitudinal cut groove 3 of the wafer 1 (strictly speaking, since the wafer 1 has already been broken in the longitudinal direction, it extends in the direction of the break line). ]. Adhesive tape 6, Unino 1, protective paper 5. Thin plate 1
2 is pressed by the roller 15 in the same manner as described above, and is bent using the lower part of the roller 15 as a fulcrum. The rollers 15 move along the thin section 8 formed by the lateral kerf 3 of the wafer 1.
When the wafer 1 is positioned in the opposite direction, the wafer 1 is bent using the thin portion 8 as a fulcrum and is reliably broken. By moving the roller 15 and pressing all the thin parts 8 in the lateral direction, the sea urchin 11 can be divided into a large number of steps 2. Note that the large number of chips 2 attached to the adhesive tape 6Vc can be easily peeled off by stretching the adhesive tape 6.

本実施例は次の効果を有する。This embodiment has the following effects.

fil  ウェハ1の分割を確実に、良好に、かつ容易
に行える。即ち1本実施例の薄板12はヤング率が約1
9 ’x I Q” dyn/cm’のステンレス板材
:C>うJilM、従来のゴムマッドステージ4にくら
べてヤング率が著しく大きくなっている。したがって、
ローラー15の押圧力によって薄板12が厚み方向に縮
小することは実質的にない。このため。
fil The wafer 1 can be divided reliably, favorably, and easily. That is, the thin plate 12 of this embodiment has a Young's modulus of about 1.
9'x IQ"dyn/cm' stainless steel plate material: C
There is substantially no shrinkage of the thin plate 12 in the thickness direction due to the pressing force of the roller 15. For this reason.

第4図に示す従来のよりにつ二ノー11がステージ4に
沈みこんでローラー7からの押圧力が分散されてし一1
!りことはなく、第2□□□に示すよりに破断すべき肉
薄部8に押圧力を集中的に加えることができる。
The conventional roller 11 shown in FIG. 4 sinks into the stage 4 and the pressing force from the roller 7 is dispersed.
! The pressing force can be applied more intensively to the thin portion 8 to be broken than shown in the second □□□.

(2)薄板12は浄さが約100μmの薄板であり、そ
の厚みはウェハ1の厚みの172以下となっている。さ
らに薄板12の両端は架設装置13に固定されているた
め、ローラー15で押された際。
(2) The thin plate 12 is a thin plate with a purity of about 100 μm, and its thickness is 172 mm or less of the thickness of the wafer 1. Furthermore, since both ends of the thin plate 12 are fixed to the erection device 13, when pushed by the rollers 15.

薄板12にはこの延在方向に張力が加わることとなる。Tension is applied to the thin plate 12 in this extending direction.

ごのため、薄板12は第2図に示すように支点から両端
にかけての部分で撓みがなく、さらに支点部近傍で大き
く湾曲することもない。したがって、薄a12に対して
保護紙5を介して当接したウェハ1はローラー15で押
圧された肉薄部8を支点として良好に屈曲させられる。
Therefore, the thin plate 12 does not bend from the fulcrum to both ends, as shown in FIG. 2, and does not curve significantly near the fulcrum. Therefore, the wafer 1 that has come into contact with the thin layer a12 via the protective paper 5 can be bent well using the thin portion 8 pressed by the roller 15 as a fulcrum.

以上のことからウェハ1を切溝3に沿って確実に分割す
ることができ、従来のように割れ残りが生じることがな
い。
As a result of the above, the wafer 1 can be reliably divided along the kerf 3, and no cracks remain as in the conventional method.

(31前述のようにウェハ1が薄a12に沈み込むこと
がないので、従来例のようなせん断力が非破断部分の肉
薄部8に生じることがない。このため、ウェハ1を良好
に切断できる。
(31 As mentioned above, the wafer 1 does not sink into the thin layer a12, so the shearing force unlike the conventional example does not occur in the thin wall portion 8 of the non-breakable portion. Therefore, the wafer 1 can be cut well. .

(41薄板12は弾性力を有しており、薄1f112の
垂下部分はローラー15の移動後に上昇する。
(The thin plate 12 has elastic force, and the hanging portion of the thin plate 112 rises after the roller 15 moves.

したがってウェハ1の屈曲の支点部分はローラー15の
移動に追従するため、ウェハ1はローラー15を移動す
ることで容易に分割できる。
Therefore, since the fulcrum portion of the bending of the wafer 1 follows the movement of the roller 15, the wafer 1 can be easily divided by moving the roller 15.

〔変形例〕[Modified example]

本発明は上述の実施例に限足されるものでな(。 The present invention is not limited to the embodiments described above.

例えば次の変形が可能なものである。For example, the following transformations are possible.

(II  実施例では薄板12の支点に接する仮想接線
りに対する薄板12の角度θは略5度とした。
(II In the embodiment, the angle θ of the thin plate 12 with respect to the virtual tangent line touching the fulcrum of the thin plate 12 was approximately 5 degrees.

しかし、この角度はテップ2の平面サイズ、gち切溝3
の間隔やウェハ1の薄さ等によって最適値が変わるため
この限りではない。但し、その角度θを2〜10度とし
たとき、ウェハ1の割れ残り頻度が小さいことが確認さ
れている。
However, this angle is the plane size of step 2, g-cut groove 3
This is not the case because the optimum value changes depending on the distance between the wafers 1 and the thickness of the wafer 1, etc. However, it has been confirmed that when the angle θ is set to 2 to 10 degrees, the frequency of remaining cracks in the wafer 1 is small.

(2)ローラー15の直径は実施例においては切溝3の
間隔の1.5〜6倍としたが、1〜10倍とすることで
ウェハ1を確実に分割できる。
(2) In the embodiment, the diameter of the roller 15 was set to 1.5 to 6 times the interval between the grooves 3, but by setting the diameter to 1 to 10 times, the wafer 1 can be reliably divided.

(31薄板12の材料はステンレス材に限うレない。し
かし、薄板12は次の条件を満すものであることが望ま
しい。
(31 The material of the thin plate 12 is not limited to stainless steel. However, it is desirable that the thin plate 12 satisfy the following conditions.

(a+  ウェハ1が押圧時に実質的に沈み込むことが
ない。
(a+ The wafer 1 does not substantially sink during pressing.

(bl  接線りに対する角度θを鋭角にできるC支点
部分が大きく湾曲しない)。
(bl The C fulcrum part, where the angle θ with respect to the tangent line can be made acute, does not curve significantly).

tc+  支点と両端との間に撓み等が生じることがな
(、はぼ直線の状態を維持できる。
tc+ There is no bending between the fulcrum and both ends (and a nearly straight state can be maintained).

以±の条件を十分に満足できるようにヤング率が6.O
X 10  dyn/cm’以上、さらには10.0X
 10  dyn/cm’以上の取材でステージ用薄板
12を形成することが望ましい。また、薄板12の厚み
は300μm以下、望ましくは150μm以下(ウェハ
の摩み以下、望ましくはウェハの厚みの172以下)と
するのがよい。但し、十分な強度が得られるように下限
は50μm以上とするのが良い。
The Young's modulus is set to 6.0 to fully satisfy the following conditions. O
X 10 dyn/cm' or more, even 10.0X
It is desirable to form the stage thin plate 12 with a coverage of 10 dyn/cm' or more. Further, the thickness of the thin plate 12 is preferably 300 μm or less, preferably 150 μm or less (less than wafer wear, preferably 172 mm or less of wafer thickness). However, in order to obtain sufficient strength, the lower limit is preferably 50 μm or more.

(41押圧時に薄板12の支点を載置台14の上面に当
接させることで上記の折曲角度θを決足してもよい。
(The above bending angle θ may be determined by bringing the fulcrum of the thin plate 12 into contact with the upper surface of the mounting table 14 when pressing 41.

(51本発明は早導体ウェハの分割の他に抵抗やコンデ
ンサが配列的に形成されたセラずツク基板等の分割にも
有効である。
(51) The present invention is effective not only for dividing fast conductor wafers but also for dividing ceramic substrates on which resistors and capacitors are arranged in an array.

(61ローラー15によるウェハ1の押圧を間欠的に行
ってもよい。例えば、1つの切溝3で押圧し、押圧を解
いてローラー15を移動し1次の切溝3で再び押圧して
もよい。
(The 61 roller 15 may press the wafer 1 intermittently. For example, the wafer 1 may be pressed with one kerf 3, the pressure released, the roller 15 moved, and the wafer 1 pressed again with the primary kerf 3. good.

〔発明の効果〕〔Effect of the invention〕

上述のように1本発明によれば基板を良好に。 As mentioned above, according to one aspect of the present invention, the substrate can be made in good condition.

かつ確実にさらに容易に分割することができる。And it can certainly be divided more easily.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例に係わる分割装置を示す斜a−
1 第2rI!Jは第1図の一部を拡大して示す縦断面内。 第3図はウェハを切溝側から見た斜視図。 第4図は従来の分割装置を示す縦断1ilI因である。 1・・・ウェハ 2・・・チップ、3・・・切溝、6・
・・粘着テープ、11・・・分割装置、12・・・ステ
ージ用薄板。
FIG. 1 shows a dividing device according to an embodiment of the present invention.
1 2nd rI! J is an enlarged longitudinal section of a part of FIG. 1. FIG. 3 is a perspective view of the wafer viewed from the kerf side. FIG. 4 is a longitudinal section showing a conventional dividing device. 1... Wafer 2... Chip, 3... Cut groove, 6...
...adhesive tape, 11...dividing device, 12...thin plate for stage.

Claims (1)

【特許請求の範囲】 基板の一方の主面に所定の間隔で切溝を形成し、前記基
板を前記切溝に沿つて破断することにより前記基板を複
数の細片に分割する方法において、ヤング率が6×10
^1^1dyn/cm^2以上の薄板が架設されている
基板分割装置を用意し、 前記基板の前記切溝が形成されている面が前記薄板に対
向するように前記基板を前記薄板上に載置し、 前記基板の前記切溝が形成されていない面の前記切溝の
上部を押圧部材によつて押圧して前記切溝に沿つて破断
することを特徴とする基板の分割方法。
[Claims] A method of dividing the substrate into a plurality of strips by forming kerfs at predetermined intervals on one main surface of the substrate and breaking the substrate along the kerfs, comprising: rate is 6×10
Prepare a substrate dividing device on which a thin plate of ^1^1 dyn/cm^2 or more is installed, and place the substrate on the thin plate so that the surface of the substrate where the kerf is formed faces the thin plate. A method for dividing a substrate, comprising: placing the substrate on the substrate, and pressing an upper part of the kerf on a surface of the substrate where the kerf is not formed with a pressing member to break the substrate along the kerf.
JP63193857A 1988-08-02 1988-08-02 Dividing method for substrate of semiconductor or the like Pending JPH0241209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63193857A JPH0241209A (en) 1988-08-02 1988-08-02 Dividing method for substrate of semiconductor or the like

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63193857A JPH0241209A (en) 1988-08-02 1988-08-02 Dividing method for substrate of semiconductor or the like

Publications (1)

Publication Number Publication Date
JPH0241209A true JPH0241209A (en) 1990-02-09

Family

ID=16314907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63193857A Pending JPH0241209A (en) 1988-08-02 1988-08-02 Dividing method for substrate of semiconductor or the like

Country Status (1)

Country Link
JP (1) JPH0241209A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743146A1 (en) * 1995-05-19 1996-11-20 New American Supply Corporation S.A.R.L. Method and equipment for producing a covering material with decorative cuts
US6364751B1 (en) * 1999-04-09 2002-04-02 Infineon Technologies Ag Method for singling semiconductor components and semiconductor component singling device
JP2006245353A (en) * 2005-03-04 2006-09-14 Nitta Ind Corp Method of manufacturing adhesive tape for fixing and multilayer ceramic capacitor
JP2008205035A (en) * 2007-02-16 2008-09-04 Nec Electronics Corp Wafer cleavage method, and wafer support sheet to be used for wafer cleavage

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0743146A1 (en) * 1995-05-19 1996-11-20 New American Supply Corporation S.A.R.L. Method and equipment for producing a covering material with decorative cuts
FR2734198A1 (en) * 1995-05-19 1996-11-22 New American Supply Corp Sarl METHOD AND INSTALLATION FOR MANUFACTURING DECORATIVE DECORATIVE COATING MATERIAL
US6364751B1 (en) * 1999-04-09 2002-04-02 Infineon Technologies Ag Method for singling semiconductor components and semiconductor component singling device
JP2006245353A (en) * 2005-03-04 2006-09-14 Nitta Ind Corp Method of manufacturing adhesive tape for fixing and multilayer ceramic capacitor
JP2008205035A (en) * 2007-02-16 2008-09-04 Nec Electronics Corp Wafer cleavage method, and wafer support sheet to be used for wafer cleavage

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