JPH0242900B2 - - Google Patents
Info
- Publication number
- JPH0242900B2 JPH0242900B2 JP20462182A JP20462182A JPH0242900B2 JP H0242900 B2 JPH0242900 B2 JP H0242900B2 JP 20462182 A JP20462182 A JP 20462182A JP 20462182 A JP20462182 A JP 20462182A JP H0242900 B2 JPH0242900 B2 JP H0242900B2
- Authority
- JP
- Japan
- Prior art keywords
- vacuum chamber
- substrate
- chamber
- pressure adjustment
- cylindrical anti
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 41
- 238000004544 sputter deposition Methods 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 7
- 230000000181 anti-adherent effect Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000003373 anti-fouling effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は、サブストレート(基板)を連続的に
スパツタ処理することが可能な連続式スパツタ装
置に係り、特にエアーツエアー(Air to Air)
式のスパツタ装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous sputtering device capable of continuously sputtering a substrate, and in particular to an air to air sputtering device.
This invention relates to a type of sputtering device.
現在、真空蒸着法、イオンプレーテイング法、
スパツタリング法等の蒸着装置の問題点として、
真空チヤンバー内が非常に汚れるということがあ
げられる。とくに、スパツタ装置においてはター
ゲツトよりたたき出された付着原子が無指向性で
あるため、このチヤンバー内の汚れは特に大きく
なるきらいがある。また、従来連続式スパツタ装
置に防着シールドを使用しているものもあるが、
その防着シールドを取り付けてもその部分は良い
がシールドされない他の部分はやはり汚れてしま
う。さらに、防着シールドは通常金属製であるた
め、内部のスパツタの状態を見ることができず不
便である。 Currently, vacuum evaporation method, ion plating method,
Problems with vapor deposition equipment such as sputtering method include:
One problem is that the inside of the vacuum chamber gets very dirty. In particular, in a sputtering device, since the attached atoms ejected from the target are non-directional, contamination within the chamber tends to become particularly large. In addition, some conventional continuous sputtering devices use anti-fouling shields,
Even if you attach the anti-fouling shield, that part will be fine, but other parts that are not shielded will still get dirty. Furthermore, since the anti-stick shield is usually made of metal, it is inconvenient that the state of the spatter inside cannot be seen.
本発明は、上記の点に鑑み、一部にガラス窓を
形成した円筒型防着シールドでスパツタ処理を行
う構成とすることにり真空室内の汚れを防止しか
つ内部のスパツタ状態を監視可能にするととも
に、該円筒型防着シールドを複数個組合せて回転
させる構造としてサブストレートを移送する機能
を持たせることにより、サブストレートを連続的
にスパツタ処理することが可能な連続式スパツタ
装置を提供しようとするものである。 In view of the above points, the present invention has a configuration in which spatter treatment is performed using a cylindrical anti-adhesive shield having a glass window formed in a part thereof, thereby preventing contamination in the vacuum chamber and making it possible to monitor the state of spatter inside the vacuum chamber. At the same time, the present invention provides a continuous sputtering device capable of continuously sputtering a substrate by having a structure in which a plurality of the cylindrical anti-stick shields are combined and rotated to have a function of transferring the substrate. That is.
以下、本発明に係る連続式スパツタ装置の実施
例を図面に従つて説明する。 Embodiments of the continuous sputtering apparatus according to the present invention will be described below with reference to the drawings.
第1図は連続式スパツタ装置の全体的構成を、
第2図はその場合に使用する円筒型防着シールド
の構成をそれぞれ示すものである。これらの図に
おいて、真空チヤンバー1内には円筒型防着シー
ルド2を放射状に4個組合せた回転部材3が回転
自在に配置されている。この真空チヤンバー1の
一方の側面にはサブストレート4を搬入するため
の搬入路5が連結され、同じ側面にサブストレー
ト4を搬出する搬出路6が連結されている。そし
て、搬入路5の途中はシヤツタ7により圧力調整
室8Aが区画され、搬出路6にはシヤツタ9によ
り圧力調整室8Bが区画される。ここで、両圧力
調整室8A,8Bは真空チヤンバー1の一方の側
面側に位置し、なるべく設置場所をとらないよう
にしている。真空チヤンバー1及び圧力調整室8
A,8Bはそれぞれ独立した真空排気系により真
空吸引されるようになつている。前記真空チヤン
バー1の中心部にはアルゴン等の不活性気体を吹
出す導入口10が設けられている。そして、各円
筒型防着シールド2の導入口10に近い方の端部
に所要の薄膜を形成するための金属原子を放出す
るターゲツト11がそれぞれ配置され、他端部に
はサブストレートホルダ12がそれぞれ設けられ
る。このサブストレートホルダ12は真空チヤン
バー1内に搬入されてきたサブストレート4を保
持する機能を有するものである。前記サブストレ
ートホルダ12には例えば第3図のように切欠口
20が形成され、当該サブストレートホルダ外面
における切欠口20の周縁部にサブストレート4
を着脱自在に保持する板ばね式挟持部材16が一
対固定されている。これらの一対の挟持部材16
はサブストレート4をサブストレートホルダ外面
側にて着脱自在に挟持する。なお、円筒型防着シ
ールド2の材質としてはステンレス等が好まし
い。ただし、円筒型防着シールド2の全周をステ
ンレスで構成したのでは内部が見えないため、一
部に硬質ガラスによるガラス窓15を形成してお
く。なお、サブストレートホルダ12の円筒型防
着シールド2の外側の端部に固定されてこれと一
体となつて回転するが、4枚のターゲツト11は
シールド2に固定する必要はなく、位置A,B,
Cに来たシールド2の内側端部に第1図のような
位置関係となるように真空チヤンバー1側に対し
固定的に設置されれば良い。 Figure 1 shows the overall configuration of the continuous sputtering device.
FIG. 2 shows the structure of the cylindrical anti-corrosion shield used in that case. In these figures, a rotary member 3 in which four cylindrical anti-stick shields 2 are combined in a radial manner is rotatably arranged in a vacuum chamber 1. A carry-in path 5 for carrying in the substrate 4 is connected to one side of the vacuum chamber 1, and a carry-in path 6 for carrying the substrate 4 out is connected to the same side. In the middle of the carry-in path 5, a pressure adjustment chamber 8A is defined by a shutter 7, and in the carry-out path 6, a pressure control chamber 8B is defined by a shutter 9. Here, both pressure adjustment chambers 8A and 8B are located on one side of the vacuum chamber 1 so as to take up as little space as possible. Vacuum chamber 1 and pressure adjustment chamber 8
A and 8B are designed to be vacuum-suctioned by independent vacuum exhaust systems. An inlet 10 for blowing out an inert gas such as argon is provided in the center of the vacuum chamber 1. A target 11 for emitting metal atoms for forming a desired thin film is placed at the end of each cylindrical anti-adhesion shield 2 near the inlet 10, and a substrate holder 12 is placed at the other end. Each is provided. This substrate holder 12 has the function of holding the substrate 4 carried into the vacuum chamber 1. A notch 20 is formed in the substrate holder 12, for example, as shown in FIG.
A pair of plate spring-type clamping members 16 that detachably hold the holder are fixed. These pair of clamping members 16
The substrate 4 is removably held on the outer surface of the substrate holder. Note that the material of the cylindrical anti-adhesion shield 2 is preferably stainless steel or the like. However, if the entire circumference of the cylindrical anti-adhesive shield 2 is made of stainless steel, the inside cannot be seen, so a glass window 15 made of hard glass is formed in a portion. Note that although the substrate holder 12 is fixed to the outer end of the cylindrical anti-adhesive shield 2 and rotates together with it, the four targets 11 do not need to be fixed to the shield 2; B,
It is sufficient if it is fixedly installed on the vacuum chamber 1 side at the inner end of the shield 2 that has come to C so that the positional relationship is as shown in FIG.
また、円筒型防着シールド2をその内側端部に
て4個接合一体化した回転部材3の中央下部は開
いており、導入口10を出た不活性気体はその回
転部材3の中央下部の開いた部分を通りターゲツ
ト11とシールド2との隙間からシール内部に侵
入する。 In addition, the lower center of the rotating member 3, which is made up of four cylindrical anti-stick shields 2 joined together at their inner ends, is open, and the inert gas that has exited the inlet 10 flows into the lower center of the rotating member 3. It passes through the open part and enters the inside of the seal through the gap between the target 11 and the shield 2.
なお、圧力調整室8A,8Bには搬入路5を通
してサブストレート4を真空チヤンバー1側のサ
ブストレートホルダ12に移送したり、サブスト
レートホルダ12側のサブストレートを搬出路6
を通して真空チヤンバー1より搬出するための伸
縮腕等の移送手段が配設される。 In addition, in the pressure adjustment chambers 8A and 8B, the substrate 4 is transferred to the substrate holder 12 on the vacuum chamber 1 side through the carry-in path 5, and the substrate on the substrate holder 12 side is transferred to the carry-in path 6.
A transfer means such as a telescoping arm for carrying out the vacuum chamber 1 through the vacuum chamber 1 is provided.
以上の構成において、大気中より圧力調整室8
A内に供給されたサブストレート4は、圧力調整
室8A内が真空チヤンバー1と同程度の高真空状
態となつた後、シヤツタ7の開閉動作により真空
チヤンバー1内に搬入され、まず位置Aにある円
筒型防着シールド2のサブストレートホルダ12
で保持される。この位置Aではターゲツト11が
アースでサブストレートホルダ2がマイナスとな
る電圧関係となる。この結果、逆スパツタ処理に
よるサブストレートのイオンクリーニングが行わ
る。その後、回転部材3は90度回転しこれに伴い
サブストレート4も位置Bに来る。この位置Bに
おいてはターゲツト1がマイナス、サブストレー
トホルダ12がアースという電圧関係となり通常
のスパツタ処理が行われる。スパツタ処理後のサ
ブストレート4は回転部材3のさらに90度の回転
により位置Cの排出位置に移送される。ここで、
サブストレート4はサブストレートホルダ12よ
りはずされ、真空チヤンバー1と同程度に高真空
に設定された圧力調整室8B内にシヤツタ9の開
閉により移送され、さらにここから大気中に取り
出される。このような動作が連続的に順次行わ
る。 In the above configuration, the pressure adjustment chamber 8 is
After the pressure adjustment chamber 8A reaches a high vacuum state comparable to that of the vacuum chamber 1, the substrate 4 supplied into the chamber A is carried into the vacuum chamber 1 by the opening/closing operation of the shutter 7, and is first placed in the position A. Substrate holder 12 of a certain cylindrical anti-corrosion shield 2
is held in At this position A, the voltage relationship is such that the target 11 is grounded and the substrate holder 2 is negative. As a result, ion cleaning of the substrate is performed by reverse sputtering. Thereafter, the rotating member 3 rotates 90 degrees, and the substrate 4 also comes to position B accordingly. At this position B, the voltage relationship is such that the target 1 is negative and the substrate holder 12 is ground, and normal sputtering processing is performed. The sputtered substrate 4 is transferred to the discharge position at position C by further rotation of the rotary member 3 by 90 degrees. here,
The substrate 4 is removed from the substrate holder 12 and transferred by opening and closing the shutter 9 into a pressure adjustment chamber 8B set to a high vacuum similar to that of the vacuum chamber 1, and then taken out into the atmosphere from there. Such operations are performed continuously and sequentially.
上記実施例によれば次のような効果をあげるこ
とができる。 According to the above embodiment, the following effects can be achieved.
(1) 円筒型防着シールド2の一端にターゲツト1
1を、他端にサブストレートホルダ12を配置
し、この円筒型防着シールド2内にてスパツタ
処理を実行するので、真空チヤンバー1にスパ
ツタの原子が付着し汚れる不都合を防止でき
る。(1) Place the target 1 at one end of the cylindrical anti-stick shield 2.
1 and a substrate holder 12 at the other end, and the sputtering process is performed within the cylindrical anti-adhesion shield 2, so that the inconvenience of spatter atoms adhering to the vacuum chamber 1 and contaminating it can be prevented.
(2) 円筒型防着シールド2を複数個放射状に組み
合せて回転部材としたので、サブストレート4
を順次回転して移送することができ、サブスト
レート4の連続的なスパツタ処理が可能であ
る。(2) Since a plurality of cylindrical anti-corrosion shields 2 are combined radially to form a rotating member, the substrate 4
The substrates 4 can be sequentially rotated and transferred, and the substrate 4 can be continuously sputtered.
(3) 円筒型防着シールド2の周面の一部にガラス
窓15を設けたので、例えば保守時において真
空チヤンバー1を開けたときにシールド内部の
スパツタによる汚れ状況を監視するのに好都合
である。(3) Since the glass window 15 is provided on a part of the circumferential surface of the cylindrical anti-adhesive shield 2, it is convenient for monitoring the dirt status caused by spatter inside the shield when the vacuum chamber 1 is opened during maintenance, for example. be.
(4) 真空チヤンバー1へのサブストレートの搬入
路5及び搬出路6をチヤンバー1の一方の側面
より引出し、それらにそれぞれ圧力調整室8
A,8Bを設けたので、真空チヤンバー11の
真空をサブストレート搬入搬出のたびに極端に
引直さなくても良く、また設置場所を少なくす
ることができる。さらに、チヤンバー1の一方
の側面より基板4が入り、同じ面より基板4が
出てくるから、作業動作の監視に好都合であ
る。(4) Pull out the substrate loading path 5 and unloading path 6 to the vacuum chamber 1 from one side of the chamber 1, and provide a pressure adjustment chamber 8 for each of them.
Since A and 8B are provided, the vacuum in the vacuum chamber 11 does not have to be extremely recirculated every time a substrate is carried in and out, and the installation space can be reduced. Further, since the substrate 4 enters from one side of the chamber 1 and comes out from the same side, it is convenient for monitoring work operations.
なお、上記実施列では、位置Cにおいてスパツ
タ処理を行わない場合を示したが、必要に応じて
位置Cにおいてもスパツタ処理を行うようにする
ことも可能である。また位置Aにおける逆スパツ
タを省略し逆スパツタは真空チヤンバー搬入前に
行うようにすることも可能である。 In addition, although the above-mentioned example shows the case where the spatter treatment is not performed at the position C, it is also possible to perform the sputter treatment at the position C as necessary. It is also possible to omit the reverse sputtering at position A and perform the reverse sputtering before the vacuum chamber is brought into the chamber.
以上説明したように、本発明によれば、ガラス
窓を形成した円筒型防着シールドを用いこの内部
でスパツタ処理を実行するようにして真空室内の
汚れを防止しかつスパツタ状態を監視可能とする
とともに、円筒型防着シールドを組合せて回転部
材を構成しサブストレートを移送する機能を持た
せることにより、サブストレートの連続的なスパ
ツタ処理を可能にした連続式スパツタ装置を得る
ことができる。 As explained above, according to the present invention, a cylindrical anti-adhesive shield having a glass window is used to perform spatter treatment inside the shield, thereby preventing contamination in the vacuum chamber and making it possible to monitor the spatter state. In addition, by combining the cylindrical anti-adhesive shield to form a rotating member that has the function of transporting the substrate, a continuous sputtering device that enables continuous sputtering of the substrate can be obtained.
第1図は本発明に係る連続式スパツタ装置の実
施例を示す平断面図、第2図は実施例における円
筒型防着シールドの構成を示す斜視図、第3図は
サブストレートホルダの1例を示す正面図であ
る。
1……真空チヤンバー、2……円筒型防着シー
ルド、3……回転部材、4……サブストレート、
5……搬入路、6……搬出路、7,9……シヤツ
タ、8A,8B……圧力調整室、11……ターゲ
ツト、12……サブストレートホルダ、15……
ガラス窓。
Fig. 1 is a plan sectional view showing an embodiment of a continuous sputtering device according to the present invention, Fig. 2 is a perspective view showing the configuration of a cylindrical anti-stick shield in the embodiment, and Fig. 3 is an example of a substrate holder. FIG. 1... Vacuum chamber, 2... Cylindrical anti-stick shield, 3... Rotating member, 4... Substrate,
5... Carrying in path, 6... Carrying out path, 7, 9... Shutter, 8A, 8B... Pressure adjustment chamber, 11... Target, 12... Substrate holder, 15...
glass window.
Claims (1)
通可能に設けられる圧力調整室と、一部にガラス
窓を形成した円筒型防着シールドを複数個放射状
に組合わせた構造で前記真空室内に配置される回
転部材と、夫々の前記円筒型防着シールドの回転
中心側の端面に配置されて原子を放出するターゲ
ツトと、夫々の前記円筒型防着シールドの他端面
に配置されるサブストレートホルダとを備え、入
側の前記圧力調整室より前記真空室に入つたサブ
ストレートを、前記サブストレートホルダで保持
してスパツタを実行し、前記回転部材の回転によ
り排出位置に移送し、出側の前記圧力調整室に送
出することを特徴とする連続式スパツタ装置。 2 前記入側及び出側の圧力調整室を前記真空室
の一方の側面側に配置した特許請求の範囲第1項
記載の連続式スパツタ装置。[Scope of Claims] 1. A vacuum chamber, a pressure adjustment chamber provided so as to be able to communicate with the inlet and outlet sides of the vacuum chamber, and a plurality of cylindrical anti-stick shields each having a glass window formed in a part, arranged radially. A rotating member arranged in the vacuum chamber in a combined structure, a target disposed on the end face on the rotation center side of each of the cylindrical anti-adhesion shields and emitting atoms, and a target for emitting atoms of each of the cylindrical anti-adhesion shields. a substrate holder disposed on the other end surface, the substrate entering the vacuum chamber from the pressure adjustment chamber on the entry side is held by the substrate holder to perform sputtering, and the substrate is sputtered by rotation of the rotating member. A continuous sputtering device characterized in that the sputtering device is transferred to a discharge position and delivered to the pressure adjustment chamber on the discharge side. 2. The continuous sputtering apparatus according to claim 1, wherein the pressure adjustment chambers on the inlet side and the outlet side are arranged on one side of the vacuum chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20462182A JPS5996271A (en) | 1982-11-24 | 1982-11-24 | Continuous sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20462182A JPS5996271A (en) | 1982-11-24 | 1982-11-24 | Continuous sputtering device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5996271A JPS5996271A (en) | 1984-06-02 |
| JPH0242900B2 true JPH0242900B2 (en) | 1990-09-26 |
Family
ID=16493503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20462182A Granted JPS5996271A (en) | 1982-11-24 | 1982-11-24 | Continuous sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5996271A (en) |
-
1982
- 1982-11-24 JP JP20462182A patent/JPS5996271A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5996271A (en) | 1984-06-02 |
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