JPH0243714A - Manufacture of ferrous magnetic thin film - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing an iron-based magnetic thin film, which is expected to be applied as a magnetic recording medium or a helix material for magnetic recording.

2. Description of the Related Art In recent years, electron cyclotron resonance plasma CVD equipment (electron cyclotron resonance plasma CVD) using microwaves has been developed.
onResonance Plasma Enhancement
ed Chemical Vapor Deposit
ion apparatus (hereinafter abbreviated as ECR-CVD apparatus) has come to be used to manufacture thin films. According to this method, a relatively low gas pressure (l
It is known that a high-density plasma can be obtained even at a temperature of 0' to 104 Torr), and that a high-quality thin film can be obtained even at a low substrate temperature.

A method of manufacturing an iron-based magnetic thin film using a conventional ECR-CVD apparatus will be described below with reference to the drawings.

FIG. 2 is a schematic diagram of a typical conventional ECR-CVD apparatus. The microwaves that come out of the microwave oscillator 9 and pass through the microwave transmission window 7 via the waveguide 8 enter the ionization gas inlet 10 in the ionization chamber 13 where a magnetic field from the magnetic field generator 6 exists. It reacts with the introduced gas (for example, H2 or N2) to generate ECR plasma. The ion shower that entered the reaction processing chamber 5 through the ion extraction window 12 reacts with the gas introduced from the reaction gas inlet 11, for example, ferrocene (biscyclopentadienyl iron, chemical formula is (C5H5)2Fe). An iron carbide thin film is grown on a substrate 1.

(For example, Journal of the Physical Society of Japan, Volume 22, 1983, L210,
However, in the above manufacturing method, only one type of raw material gas containing metal is used, so various characteristics of the magnetic thin film (saturation magnetization, coercive force, durability, etc.) There were limits to controlling the

In view of the above-mentioned problems, the present invention provides a method for manufacturing an iron-based magnetic thin film that produces a high-performance magnetic thin film that meets the purpose.

Means for Solving the Problems In order to solve the above problems, in the method for manufacturing an iron-based magnetic thin film of the present invention, a gas containing iron is supplied as a first raw material gas into a vacuum container, and a gas containing iron is supplied as a second raw material gas. , and a method of supplying a gas containing an element other than iron as the third and subsequent raw material gases. Examples of raw material gases containing iron include ferrocene, iron carbonyl (F e (Co) 51 ,
Triethoxyiron (Fe(QC2H8) iron acetylacetonate (Fe(0□C5H7)3) and the like can be used.

The gases containing elements other than iron as the second raw material gas and the third and subsequent raw material gases are CO(C5H5)2゜N I
(C5H5) 2 , Ru (Cs H5)Os
Metallocenes such as (C5H5) 2, Cr (Co)
. , Mo (Co) 6. V (Co) 6W (C
o), and metal carbonyls such as CO□ (CO)8.

Effect of the present invention With the above-described configuration, a gas containing iron is supplied as the first raw material gas into the vacuum container, and an element other than iron is supplied as the second raw material gas and the third raw material gas. By supplying a gas containing
It is possible to obtain an iron-based magnetic thin film of a ternary or more multi-component system, which has characteristics that could not be obtained with a binary system such as N or Fe-0.

The first raw material gas, the second raw material gas, and the third and subsequent raw material gases are decomposed by ECR plasma, and a ternary or more multi-component iron-based magnetic thin film is formed on the substrate.

For example, a soft magnetic film for a magnetic head is required to have high saturation magnetic flux density, low coercive force, and high magnetic permeability.

In the Fe-C film, due to the formation of crystalline materials such as Fe5C,
Although the magnetocrystalline anisotropy may increase and the coercive force may increase, by adding Cr, Mo, W, etc., the generation of crystalline material can be suppressed and the coercive Gfi force can be lowered.

EXAMPLE Hereinafter, a method for manufacturing an iron-based magnetic thin film according to an example of the present invention will be described with reference to the drawings. (Figure 11 shows the ECR-1 used in the method for manufacturing an iron-based magnetic thin film according to an embodiment of the present invention.
It is a schematic diagram of a CVD apparatus. First reaction gas inlet tt
Introducing more gaseous ferrocene. From the second reaction gas inlet 14, hexacarbonyl of MoJbden, Mo
(Co) Introducing 6. H2° and N2 gases are introduced from the ionized gas inlet lO to bring the ECR plasma into an excited state. In this example, the frequency of the microwave oscillator 9 is 2.45 GHz, and the frequency of the microwave oscillator 9 is 2.45 GHz. From the gas inlet 10, 0 to 503 CCM of hydrogen and nitrogen each are introduced, and from the first reaction gas inlet 11, gaseous ferrocene (biscyclopentadienyl iron, chemical formula: (Cs H5) 2F
From the second reaction gas inlet 14, gaseous Mo with nitrogen or argon as a carrier gas is introduced.
(CO)6 was introduced and Fe-
A Mo-C thin film is produced. The amount of ferrocene and molybdenum hexacarbonyl introduced is determined by each bubbler.
The temperature was controlled by 4W and the flow rate of the carrier gas.

(Margins below) Table 1 An example of the results is shown in Table 1.
It has become clear that the coercive force can be lowered with the L film. This is because the addition of MO suppresses the formation of polycrystalline substances,
This is because the magnetocrystalline anisotropy decreases. Note that the same effect can be obtained by adding Cr or W by using hexacarbonyl of chromium or tungsten instead of hexacarbonyl of molybdenum. This is advantageous when using an iron carbide magnetic thin film as a head material for high-density magnetic recording.

Next, a second embodiment will be described below. As in the first embodiment, gaseous ferrocene is introduced as a raw material gas through the first reaction gas inlet 11, while cobalt octacarbonyl (C
o2 (Co) 81 is introduced. Oxygen is supplied from the ionization gas inlet 10.

Introduce gases such as nitrogen and hydrogen. The microwave oscillator 9 was set to 400 W, and spinel ferrite C0Fe20a was deposited on the substrate 1.

Research is progressing on C6Fe2o4 as a stable magneto-optical recording medium, and according to the manufacturing method of this example, it can be formed into a film even at room temperature.

Furthermore, a third embodiment will be described below. As in the first embodiment, gaseous ferrocene is introduced as a raw material gas through the first reaction gas inlet 11, while ruthenium metallocene (Ru (
C5Hs)21 is introduced. Ionization gas inlet l
Gases such as oxygen, nitrogen, pentahydrogen, etc. are introduced from O. The microwave oscillator 9 is set to 400W, and Fe-
A Ru-Cyt film was deposited. Ru is effective in improving the durability of thin films.

As described in the above embodiments, in the present invention, a gas containing iron is supplied as the first raw material gas into a vacuum container, and a gas containing iron is supplied as the second raw material gas and the third and subsequent raw material gases. By supplying a gas containing the above elements, it is possible to improve the magnetic properties of iron-based magnetic thin films and to produce new iron-based magnetic thin films.

Effects of the Invention As described above, in the present invention, a gas containing iron is supplied as the first raw material gas into a vacuum container, and an element other than iron is supplied as the second raw material gas and the third and subsequent raw material gases. By using a means of supplying a gas containing iron, it is possible to improve the magnetic properties of iron-based magnetic thin films and to make it possible to manufacture new iron-based magnetic thin films.

[Brief explanation of the drawing]

Fig. 1 is a schematic diagram of an ECRCVD apparatus used in an embodiment of the present invention, and Fig. 2 is an ECR-C CVD apparatus used in a conventional manufacturing method.
It is a schematic diagram of a VD device. l... Board, 2... Board support stand, 3.
...Targetft, 4...T for sputtering! lfi, 5... Reaction processing chamber, 6...
...Magnetic field generator, 7...Microwave transmission window, 8
... Waveguide, 9 ... Microwave oscillator, lO ... Ionization gas inlet, 11 ...
...Reactive gas inlet, 12...Ion extraction window, 13...Ionization chamber, 14...Second reactant gas inlet.

Claims (2)

[Claims] (1) When depositing an iron-based magnetic thin film on a substrate by generating electron cyclotron resonance plasma in a vacuum container to decompose a source gas, iron is contained as the first source gas in the vacuum container. A method for producing an iron-based magnetic thin film, which comprises supplying a gas, and supplying a gas containing an element other than iron as a second raw material gas and a third and subsequent raw material gas. (2) The first raw material gas is ferrocene {(C_5H_5)
_2Fe}, and the second raw material gas is one of metallocene other than ferrocene and metal carbonyl.