JPH0246049Y2 - - Google Patents
Info
- Publication number
- JPH0246049Y2 JPH0246049Y2 JP12504984U JP12504984U JPH0246049Y2 JP H0246049 Y2 JPH0246049 Y2 JP H0246049Y2 JP 12504984 U JP12504984 U JP 12504984U JP 12504984 U JP12504984 U JP 12504984U JP H0246049 Y2 JPH0246049 Y2 JP H0246049Y2
- Authority
- JP
- Japan
- Prior art keywords
- raw material
- silicon
- crucible
- supply
- freely
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 54
- 229910052710 silicon Inorganic materials 0.000 claims description 54
- 239000010703 silicon Substances 0.000 claims description 54
- 239000002994 raw material Substances 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 235000012431 wafers Nutrition 0.000 claims description 13
- 239000000155 melt Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 6
- 238000005096 rolling process Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
[産業上の利用分野]
本考案は、太陽電池その他の光電子変換素子等
に用いられている多結晶シリコンウエハの製造に
供される溶融シリコン供給装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a molten silicon supply device used for manufacturing polycrystalline silicon wafers used in solar cells and other photoelectronic conversion elements.
[従来の技術]
従来から、多結晶シリコンウエハは各種の方法
によつて製造されており、最も一般的には、シリ
コン母材より一旦所定形状のインゴツトを鋳造
し、これをスライスすることによりウエハを得る
ようにしているが、これではスライス作業に大変
な時間をかけなければならないだけでなく、イン
ゴツトの約50%がスライス時のロスとなつてしま
うため、製品がコスト高につき大量生産も不可能
である。[Prior Art] Polycrystalline silicon wafers have conventionally been manufactured by various methods, and the most common method is to first cast an ingot of a predetermined shape from a silicon base material and then slice it into wafers. However, this not only requires a lot of time for slicing, but also causes about 50% of the ingot to be lost during slicing, making the product expensive and making mass production impossible. It is possible.
そこで、スライスによらない方法としてリボン
法とキヤステイング法(鋳造法)が既に実施され
ているが、大型の太陽電池素材等が得られない難
点があり、更にキヤステイング法では、シリコン
結晶粒が非常に細かくなつて大きな結晶粒が得ら
れない為、当該ウエハによつて得られる太陽電池
の光電変換率も2〜3%と極度に悪くなる欠点を
もつている。 Therefore, the ribbon method and the casting method (casting method) have already been implemented as methods that do not involve slicing, but they have the disadvantage of not being able to obtain large solar cell materials, and in addition, the casting method has the disadvantage that silicon crystal grains are Since the crystal grains are extremely fine and large crystal grains cannot be obtained, the photoelectric conversion rate of the solar cell obtained using the wafer is also extremely poor at 2 to 3%.
そこで、本出願人は、上記諸法の欠陥を改善す
ることができる多結晶シリコンウエハの製造方法
として既に、シリコン母材を溶融し、この融液を
石英またはカーボンで形成され、かつ回転状態に
ある製造皿上に滴下するなどして、遠心力を有効
利用することにより所望拡径状態の融液薄層を層
成し、これを固化後、製造皿から剥離する方法
(以下これをスピン法という)を提案した。 Therefore, the present applicant has already developed a method for manufacturing polycrystalline silicon wafers that can improve the defects of the above methods, by melting a silicon base material, and using this melt in a rotating state that is made of quartz or carbon. A method in which a thin layer of melt with a desired expanded diameter is layered by dripping onto a certain production plate, effectively utilizing centrifugal force, and this is peeled off from the production plate after solidification (hereinafter referred to as the spin method) ) was proposed.
本考案はこの新規なるスピン法による多結晶シ
リコンウエハの製造に際し、溶融シリコンを回転
する製造皿に適量だけ供給するため創作された従
来例のない溶融シリコン供給装置に関する。 The present invention relates to an unprecedented molten silicon supply device created to supply an appropriate amount of molten silicon to a rotating production plate during the production of polycrystalline silicon wafers using this new spin method.
[考案が解決しようとする問題点]
上記スピン法の実施にあつては、アルゴン等の
所望不活性雰囲気内にてシリコン原料を溶融し、
この溶融シリコンを回転する製造皿へ供給しなけ
ればならないが、この際シリコン原料を次々と不
活性雰囲気内に供与していくとき、簡易な操作で
しかも当該雰囲気中に外気が侵入する如きことの
ないようにして、連続的な生産を可能となし、か
つ上記溶融シリコンを製造皿に供給するための坩
堝傾倒操作を、外部から簡易な操作で、しかも同
じく上記雰囲気を害することなしに確実に行い得
るようにするのが、その目的である。[Problems to be solved by the invention] In carrying out the above spin method, the silicon raw material is melted in a desired inert atmosphere such as argon,
This molten silicon must be supplied to a rotating production tray, but when supplying silicon raw materials one after another into an inert atmosphere, it is a simple operation and prevents outside air from entering the atmosphere. In addition, the crucible tilting operation for supplying the molten silicon to the production dish can be performed easily from the outside without damaging the atmosphere. The purpose is to get it.
[問題点を解決するための手段]
本考案は上記の目的を達成するため、炉体内の
所望不活性ガス雰囲気にあつて、原料供給口から
供与されたシリコン原料を坩堝に収納して溶融さ
せ、当該溶融シリコンを回転する製造皿に適量滴
下するシリコンウエハの製造に供されるもので、
仕切弁によつて炉体内と遮断自在とした供給空所
に、前記不活性ガスを導入自在となし、かつ前記
原料供給口を開閉自在なるよう臨設すると共に、
当該空所から炉体内に昇降自在なるように気密に
貫装した昇降杆の下端には、供給空所にあつて原
料供給口から供与されるシリコン原料を受容する
と共に、所定降下位置にて解離されることで、受
容状態が解かれ、当該シリコン原料が坩堝内に落
入する原料カツプを備えてなる原料導入部と、上
記シリコン原料を受容した坩堝と、これを加熱溶
融するヒーターと、操作杆の上動により同杆と坩
堝とを連結する操作用索の緊張引上げにより当該
坩堝が転動自在である枢支機構と、当該転動によ
りシリコン母材融液が流下されて、これを製造皿
に滴下供給する漏斗とを備えた母材供給部とから
構成されている溶融シリコン供給装置を提供した
ものである。[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention has a method in which the silicon raw material supplied from the raw material supply port is stored in a crucible and melted in a desired inert gas atmosphere inside the furnace body. , which is used for manufacturing silicon wafers by dropping an appropriate amount of the molten silicon onto a rotating manufacturing plate,
The inert gas can be freely introduced into a supply space which can be freely isolated from the furnace body by a gate valve, and the raw material supply port is provided so as to be freely openable and closable;
The lower end of the elevator rod, which is airtightly penetrated so that it can be raised and lowered into the furnace body from the cavity, receives the silicon raw material supplied from the raw material supply port in the supply cavity, and also disassembles it at a predetermined lowering position. a raw material introduction section comprising a raw material cup into which the silicon raw material falls into the crucible after the receiving state is released; a crucible that receives the silicon raw material; a heater that heats and melts the silicon raw material; A pivot mechanism in which the crucible can be freely rolled by pulling up the tension of the operating cable connecting the rod and the crucible by the upward movement of the rod, and a silicon base material melt is flowed down by the rolling, and this is manufactured. The present invention provides a molten silicon supply device comprising a base material supply section equipped with a funnel for dripping the silicon into a dish.
[作用]
仕切弁の開閉により供給空所における原料シリ
コンの供給が炉体内と隔絶状態下で行い得ると共
に、当該空所には別個にアルゴン等を供給できる
ので、炉体内全体へのアルゴン供給を、原料シリ
コンの供給毎に実施する如きことが不要となり、
かつ坩堝の作動も手動または動力により確実に行
うことができ、シリコン融液を受ける漏斗の存在
により、坩堝の動きが急速であつても、製造皿へ
シリコン融液が正確に流下供給され、不本意な流
失も発生しない。[Operation] By opening and closing the gate valve, raw silicon can be supplied to the supply space in a state isolated from the furnace body, and since argon etc. can be separately supplied to the space, argon can be supplied to the entire furnace body. , it is no longer necessary to carry out operations every time raw material silicon is supplied.
In addition, the crucible can be operated reliably by hand or power, and because of the presence of the funnel that receives the silicon melt, even if the crucible moves rapidly, the silicon melt can be accurately supplied to the production pan, preventing any contamination. No serious leakage occurs.
[実施例]
次に、本考案を図示の一実施例について説示す
ると、Aが多結晶シリコンウエハの製造に供され
る溶融シリコン供給装置であり、後述のようにシ
リコン原料を坩堝に供給するための原料導入部1
と、当該坩堝で上記原料を加熱溶融した後多結晶
シリコンウエハを成形する製造皿に母材融液を滴
下供給する母材融液供給部2とから構成され、こ
れらを構成する部材は、シリコンとの反応性が少
なく高温に耐える石英SiO2やカーボンC等で形
成される。[Example] Next, the present invention will be explained with reference to an illustrated example. A is a molten silicon supply device used for manufacturing polycrystalline silicon wafers, and as described later, it is used to supply silicon raw material to a crucible. Raw material introduction part 1
and a base material melt supply unit 2 that drips the base material melt onto a production plate that molds polycrystalline silicon wafers after heating and melting the raw materials in the crucible. It is made of quartz SiO 2 or carbon C, which has little reactivity with other materials and can withstand high temperatures.
上記原料導入部1は、後に詳述する炉体3の上
面中央に立設された中空の筒体11にあつて、そ
の上部側壁に中空筒状の原料供給口12が突設さ
れ、その開口端には開閉蓋13が開閉自在に設け
られていると共に、該供給口12の下位に筒体1
1を軸線と直角方向に遮断閉塞する仕切弁14が
設けられており、この筒体11内の軸線位置に
は、昇降杆15が挿通されて、同杆15の上端が
筒体11の上端を閉塞する蓋16を貫通して外側
に突出しており、同蓋16のOリング16′,1
6′と気密に摺動することで昇降杆15が手動ま
たは図示しない動力により昇降自在となつてい
る。 The raw material introduction section 1 is a hollow cylindrical body 11 erected in the center of the upper surface of a furnace body 3, which will be described in detail later, and has a hollow cylindrical raw material supply port 12 protruding from the upper side wall thereof. An opening/closing lid 13 is provided at the end so that it can be opened and closed, and a cylindrical body 1 is provided below the supply port 12.
A gate valve 14 is provided to block and close the cylinder 1 in a direction perpendicular to the axis, and an elevating rod 15 is inserted into the axial position of the cylinder 11 so that the upper end of the rod 15 touches the upper end of the cylinder 11. It penetrates the lid 16 to be closed and protrudes outward, and the O-rings 16', 1 of the lid 16
6', the lifting rod 15 can be raised and lowered manually or by power (not shown).
さらに、この昇降杆15の炉体3内部に突出さ
れた下端には上記原料供給口12から供給された
シリコン原料を受容し、これを、後述の如く坩堝
に供給する原料カツプ17が設けられている。 Further, a raw material cup 17 is provided at the lower end of the lifting rod 15 protruding into the furnace body 3 to receive the silicon raw material supplied from the raw material supply port 12 and supply it to the crucible as described later. There is.
この原料カツプ17は、上記昇降杆15の下端
に固定され、かつ上面が外側に向け下降するテー
パ状に形成された底蓋18と、同蓋18上にあつ
て載置され、上端に係止フランジ19aが外方へ
突出されている中空筒状の収納胴部19とからな
つており、炉体3に設けられている横向仕切板2
0に開口の通口20aに、上記原料カツプ17が
嵌入した際、その上記フランジ19aが、通口2
0aの周縁部に係止される構成になつている。 The raw material cup 17 is fixed to the lower end of the lifting rod 15 and has a tapered top surface that descends toward the outside. A horizontal partition plate 2 is provided on the furnace body 3, and consists of a hollow cylindrical storage body 19 with a flange 19a projecting outward.
When the raw material cup 17 is fitted into the opening 20a, the flange 19a is inserted into the opening 20a.
It is configured to be locked to the peripheral edge of 0a.
さらに、上記筒体11の上部側壁、すなわち仕
切弁14により区画される供給空所11′には
夫々開閉弁21,22を有し、アルゴン等の不活
性ガスを供給するガス供給管23、真空排気管2
4が設けられている。 Further, the upper side wall of the cylinder 11, that is, the supply space 11' defined by the gate valve 14, has on-off valves 21 and 22, respectively, a gas supply pipe 23 for supplying an inert gas such as argon, and a vacuum exhaust pipe 2
4 is provided.
次に、前記母材融液供給部2は、炉体3の略中
央に、漏斗31が支持体32を介して固定され、
該漏斗31の上位で、かつ前記原料カツプ17の
下位に、坩堝33が漏斗31上に立設された支持
柱34,34の枢支ピン35により、回転俯仰自
在なるよう軸支された構成となつている。 Next, in the base material melt supply section 2, a funnel 31 is fixed to approximately the center of the furnace body 3 via a support 32,
A crucible 33 is pivotally supported above the funnel 31 and below the raw material cup 17 by pivot pins 35 of support columns 34, 34 erected on the funnel 31 so as to be rotatable up and down. It's summery.
上記漏斗31は、内部に下位細りテーパ状の受
容口31aが形成され、その下端に細径の流失口
31bが連設されたものである。 The funnel 31 has a tapered receiving opening 31a formed therein, and a small-diameter outflow opening 31b connected to the lower end of the receiving opening 31a.
さらに、前記炉体3には、前記筒体11と平行
に支承筒36が立設され、かつ同筒36内の軸心
には昇降自在に操作杆37が設けられ、同杆37
の上端がOリング36′と摺動自在なるよう気密
に貫通して上方に突出され、前記炉体3内に突出
する操作杆37の下端と前記坩堝33の底部外側
端の連係ピン33′との間に、カーボン繊維によ
る糸条などの操作用索38が連結されている。 Furthermore, a supporting cylinder 36 is provided in the furnace body 3 in parallel with the cylinder 11, and an operating rod 37 is provided at the axis of the cylinder 36 so as to be able to move up and down.
The upper end of the operating rod 37 protrudes upward through the O-ring 36' so that it can slide freely through the O-ring 36', and the lower end of the operating rod 37 protrudes into the furnace body 3. A manipulation cable 38 such as a carbon fiber thread is connected between the two.
また、39は炉体3内の前記坩堝33と漏斗3
1の外周に所定間隔を有して設けられたヒーター
であり、坩堝33内のシリコン原料を加熱溶融す
る。 Further, 39 indicates the crucible 33 and the funnel 3 in the furnace body 3.
The crucible 33 is a heater provided at a predetermined interval around the outer periphery of the crucible 33, and heats and melts the silicon raw material in the crucible 33.
こゝで、40は前記漏斗31内のシリコン母材
融液の溶融状態を保持するために該漏斗31の下
位近傍に設けられたヒーター、41は坩堝33内
のシリコン母材融液の溶融状態等炉体3内部を透
視可能な透視窓、42はステンレススチールなど
により形成された炉体3の外器43内にあつて、
これに隣接したカーボンなどによる耐熱壁を示
す。 Here, 40 is a heater provided near the bottom of the funnel 31 to maintain the molten state of the silicon base material melt in the funnel 31, and 41 is a heater that maintains the molten state of the silicon base material melt in the crucible 33. A see-through window 42 that can see through the inside of the furnace body 3 is located in the outer vessel 43 of the furnace body 3 made of stainless steel or the like.
A heat-resistant wall made of carbon or the like is shown adjacent to this.
尚、4は前記漏斗31の直下に設けられたター
ンテーブルであり、その上面に載置された製造皿
5を所要速度で回転しつゝ、上記製造皿5を構成
する上皿6の流入通口6aよりシリコン母材融液
が注入されるものであり、図中7は上皿6と図示
されていない螺子により重積状態にて締着される
製造皿5の下皿を示し、両皿6,7の間に、上記
シリコン母材融液が、回転遠心力によつて流入す
る複数個のキヤビテイ8,8・・が形成され、
こゝに流入した融液の固化により製品が得られ
る。 Reference numeral 4 denotes a turntable installed directly below the funnel 31, which rotates the production plate 5 placed on the upper surface at a required speed, and rotates the inflow passage of the upper plate 6 constituting the production plate 5. The silicon base material melt is injected from the port 6a, and 7 in the figure indicates the lower plate of the manufacturing plate 5, which is fastened to the upper plate 6 in an overlapping state by screws (not shown), and both plates are A plurality of cavities 8, 8, . . . are formed between 6 and 7, into which the silicon base material melt flows by rotation centrifugal force,
A product is obtained by solidifying the melt that has flowed here.
次に、上記実施例に係る溶融シリコン供給装置
Aを用いてシリコン原料を溶融し、これを製造皿
5に供給するには、先ず、昇降杆15を原料カツ
プ17が原料供給口12の位置に来るまで上昇さ
せる。 Next, in order to melt the silicon raw material using the molten silicon supply device A according to the above embodiment and supply it to the production tray 5, first, the lifting rod 15 is moved so that the raw material cup 17 is at the position of the raw material supply port 12. Let it rise until it comes.
次に、仕切弁14を閉塞状態として供給空所1
1′を閉成後、同口12を開いて原料カツプ17
内へシリコン原料を投入し、当該供給口12を開
閉蓋13にて閉塞する。 Next, the gate valve 14 is closed and the supply space 1 is closed.
After closing 1', open the same opening 12 and insert the raw material cup 17.
A silicon raw material is introduced into the container, and the supply port 12 is closed with an opening/closing lid 13.
つづいて、開閉弁22を開放して真空排気管2
4を通して上記空所11′内の真空排気を行つた
後、開閉弁22を閉塞し、次いで開閉弁21を開
成して仕切弁14上部の筒体11内にガス供給管
23を通してアルゴンガスを導入する。 Next, open the on-off valve 22 to open the vacuum exhaust pipe 2.
After evacuating the space 11' through 4, the on-off valve 22 is closed, and then the on-off valve 21 is opened to introduce argon gas into the cylinder 11 above the gate valve 14 through the gas supply pipe 23. do.
次に、仕切弁14を開成した後、昇降杆15を
下降させていくと、胴部19のフランジ19aが
前記横向仕切板20の通口20aにあつて、その
周縁部に係止されるから、それ以降は底蓋18が
前記胴部19を置いて降下するので、原料カツプ
17内のシリコン原料が下方の坩堝33内へ落下
し、これがヒーター39によつて1400℃程度で加
熱溶融されてシリコン母材融液となる。 Next, after opening the gate valve 14, when the elevator rod 15 is lowered, the flange 19a of the body 19 comes to the opening 20a of the horizontal partition plate 20 and is locked to the peripheral edge thereof. After that, the bottom cover 18 lowers with the body 19 placed thereon, so that the silicon raw material in the raw material cup 17 falls into the crucible 33 below, where it is heated and melted by the heater 39 at about 1400°C. It becomes a silicon base material melt.
つづいて、手動または図示しない自動昇降装置
によつて操作杆37を上昇させると、操作用索3
8が緊張状態にて引上げられ、坩堝33が枢支ピ
ン35を中心として転動し、シリコン母材融液が
漏斗31内へ流入させる。 Next, when the operating rod 37 is raised manually or by an automatic lifting device (not shown), the operating rope 37 is raised.
8 is pulled up under tension, the crucible 33 rolls around the pivot pin 35, and the silicon base material melt flows into the funnel 31.
この際、受容口31aに流入したシリコン母材
融液は、流失口31bから製造皿5の流入通口6
aへ滴下流入する。 At this time, the silicon base material melt that has flowed into the receiving port 31a is transferred from the outflow port 31b to the inflow port 6 of the production tray 5.
It drips into a.
そして、製造皿5内へ流入したシリコン母材融
液は、ターンテーブル4の回転によつて回転する
製造皿5の遠心力によつて、拡径方向へ流動さ
れ、当該融液による融液薄層が前記キヤビテイ
8,8・・・内にて形成されるので、これを固化
することで多結晶シリコンウエハが製造できる。 Then, the silicon base material melt that has flowed into the manufacturing pan 5 is flowed in the direction of diameter expansion by the centrifugal force of the manufacturing pan 5, which is rotated by the rotation of the turntable 4, and the melt is thinned by the melt. Since the layers are formed within the cavities 8, 8, . . . , a polycrystalline silicon wafer can be manufactured by solidifying the layers.
[考案の効果]
昇降杆15と操作杆37の昇降および仕切弁1
4、開閉弁21,22の開閉といつた簡易な操作
により、製造皿5に供給する定量のシリコン母材
融液に見合つたシリコン原料を連続的に供与でき
るので、多結晶シリコンウエハの連続的製造が可
能となり大量生産に好適である。[Effect of the invention] Lifting and lowering of the lifting rod 15 and operating rod 37 and gate valve 1
4. By simple operations such as opening and closing the on-off valves 21 and 22, silicon raw material corresponding to the amount of silicon base material melt supplied to the production tray 5 can be continuously supplied, so that polycrystalline silicon wafers can be continuously produced. This makes it possible to manufacture the product and is suitable for mass production.
また、仕切弁14と弁操作よりシリコンウエハ
製造に際して炉体3内をアルゴンガス等の不活性
ガスによつて不活性状態に維持したまゝの原料シ
リコンの供与が可能となり、この点からも生産性
の向上に資するところ大である。 In addition, the gate valve 14 and valve operation make it possible to supply raw material silicon while keeping the inside of the furnace body 3 in an inert state with an inert gas such as argon gas during silicon wafer production. It greatly contributes to the improvement of sexuality.
図は本考案に係る溶融シリコン供給装置の一例
を示す縦断正面図である。
1……原料導入部、2……母材融液供給部、3
……炉体、5……製造皿、11′……供給空所、
12……原料供給口、14……仕切弁、15……
昇降杆、17……原料カツプ、23……ガス供給
管、31……漏斗、33……坩堝、37……操作
杆、38……操作用索、39……ヒーター。
The figure is a longitudinal sectional front view showing an example of a molten silicon supply device according to the present invention. 1... Raw material introduction section, 2... Base material melt supply section, 3
... Furnace body, 5 ... Production plate, 11' ... Supply space,
12... Raw material supply port, 14... Gate valve, 15...
Lifting rod, 17... Raw material cup, 23... Gas supply pipe, 31... Funnel, 33... Crucible, 37... Operating rod, 38... Operating cable, 39... Heater.
Claims (1)
供給口から供与されたシリコン原料を坩堝に収納
して溶融させ、当該溶融シリコンを回転する製造
皿に適量滴下するシリコンウエハの製造に供され
るもので、仕切弁によつて炉体内と遮断自在とし
た供給空所に、前記不活性ガスを導入自在とな
し、かつ前記原料供給口を開閉自在となるよう臨
設すると共に、当該空所から炉体内に昇降動自在
なるよう気密に貫装した昇降杆の下端には、供給
空所にあつて原料供給口から供与されるシリコン
原料を受容すると共に、所定降下位置にて解離さ
れることで、受容状態が解かれ、当該シリコン原
料が坩堝内に落入する原料カツプを備えてなる原
料導入部と、上記シリコン原料を受容した坩堝
と、これを加熱溶融するヒーターと、操作杆の上
動により同杆と坩堝とを連結する操作用索の緊張
引上げにより当該坩堝が転動自在である枢支機構
と、当該転動によりシリコン母材融液が流下され
て、これを製造皿に滴下供給する漏斗とを備えた
母材融液供給部とから構成されている溶融シリコ
ン供給装置。 In a desired inert gas atmosphere inside the furnace, the silicon raw material supplied from the raw material supply port is stored in a crucible and melted, and an appropriate amount of the molten silicon is dropped onto a rotating production plate to produce silicon wafers. The inert gas can be freely introduced into the supply cavity which can be freely isolated from the furnace body by a gate valve, and the raw material supply port is installed so that it can be freely opened and closed. The lower end of the lifting rod, which is airtightly inserted into the body so that it can be moved up and down, has a supply cavity and receives the silicon raw material supplied from the raw material supply port, and is dissociated at a predetermined lowering position. A raw material introduction part comprising a raw material cup into which the silicon raw material falls into the crucible after the receiving state is released, a crucible that receives the silicon raw material, a heater that heats and melts the silicon raw material, and a rising movement of the operating rod. A pivot mechanism that allows the crucible to roll freely by pulling up the tension of the operating cable connecting the rod and the crucible, and the rolling causes the silicon base material melt to flow down and supply it dropwise to the production tray. A molten silicon supply device comprising a base material melt supply section equipped with a funnel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504984U JPS6139933U (en) | 1984-08-17 | 1984-08-17 | Molten silicon supply equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12504984U JPS6139933U (en) | 1984-08-17 | 1984-08-17 | Molten silicon supply equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6139933U JPS6139933U (en) | 1986-03-13 |
| JPH0246049Y2 true JPH0246049Y2 (en) | 1990-12-05 |
Family
ID=30683734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12504984U Granted JPS6139933U (en) | 1984-08-17 | 1984-08-17 | Molten silicon supply equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6139933U (en) |
-
1984
- 1984-08-17 JP JP12504984U patent/JPS6139933U/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6139933U (en) | 1986-03-13 |
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