JPH0247541A - Surface condition measuring device - Google Patents

Surface condition measuring device

Info

Publication number
JPH0247541A
JPH0247541A JP63198280A JP19828088A JPH0247541A JP H0247541 A JPH0247541 A JP H0247541A JP 63198280 A JP63198280 A JP 63198280A JP 19828088 A JP19828088 A JP 19828088A JP H0247541 A JPH0247541 A JP H0247541A
Authority
JP
Japan
Prior art keywords
light
measured
scanning
optical system
receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63198280A
Other languages
Japanese (ja)
Other versions
JPH0675039B2 (en
Inventor
Michio Kono
道生 河野
Eiichi Murakami
栄一 村上
Akiyoshi Suzuki
章義 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63198280A priority Critical patent/JPH0675039B2/en
Publication of JPH0247541A publication Critical patent/JPH0247541A/en
Publication of JPH0675039B2 publication Critical patent/JPH0675039B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/94Investigating contamination, e.g. dust

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To increase a rate of separative detection of an extraneous substance by avoiding a diffracted light generated from a circuit pattern and by sensing selectively only a scattered light flux from the extraneous substance. CONSTITUTION:A beam from a laser 1 passed through a stop 101 and enters a beam expander 102, whereby the radius of the beam is expanded. Then, it is reflected by a polygon mirror 2 and made to fall on each position of a beam scan line on a circuit board 5, through a lens 61 whose optical axis is inclined at an angle alpha to the surface of the board and at an angle beta to the longitudinal direction. The polygon mirror 2 is rotated for scanning on the board 5, while it is moved on the board 5 for scanning the whole surface. A condenser element of a light-sensing optical system condenses a scattered light flux from an extraneous substance on the board 5, and the flux is focused on a focal point PG on the rear side of the lens 61, passed through a stop 103 and led onto the light-sensing surface of a light-sensing element 9 by a lens 8.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は表面状態測定装置に関し、特に半導体製造装置
で使用される回路パターンが形成されているレチクルや
フォトマスク等の基板上に回路パターン以外の異物、例
えば不透過性のゴミ等を検出する際に好適な表面状態測
定装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a surface condition measuring device, and particularly to a surface condition measuring device that is used in semiconductor manufacturing equipment to measure a surface condition on a substrate such as a reticle or a photomask on which a circuit pattern is formed. The present invention relates to a surface condition measuring device suitable for detecting foreign matter such as impermeable dust.

(従来の技術) 一般にIC製造工程においてはレチクル又はフォトマス
ク等の基板上に形成されている露光用の回路パターンを
半導体焼付は装置(ステッパー又はマスクアライナ−)
によりレジストが塗布されたウニ八面上に転写して製造
している。
(Prior Art) Generally, in the IC manufacturing process, a semiconductor printing device (stepper or mask aligner) is used to print a circuit pattern for exposure formed on a substrate such as a reticle or a photomask.
It is manufactured by transferring it onto eight surfaces of sea urchins coated with resist.

この際、基板面上にゴミ等の異物が存在すると転写する
際、異物も同時に転写されてしまいIC製造の歩留りを
低下させる原因となってくる。
At this time, if foreign matter such as dust is present on the substrate surface, the foreign matter will also be transferred at the time of transfer, causing a decrease in the yield of IC manufacturing.

特にレチクルを使用し、ステップアンドリピート方法に
より繰り返してウニ八面上に回路パターンを焼付ける場
合、レチクル面上の1個の異物がウェハ全面に焼付けら
れてしまいIC製造の歩留りを大きく低下させる原因と
なってくる。
In particular, when a reticle is used to repeatedly print a circuit pattern on eight surfaces using a step-and-repeat method, a single foreign object on the reticle surface is printed onto the entire wafer, which greatly reduces the yield of IC manufacturing. It becomes.

その為、IC製造過程においては基板上の異物の存在を
検出するのが不可欠となっており、従来より種々の検査
方法が提案されている。例えば第7図は異物が等方的に
光を散乱する性質を利用する方法の一例である。同図に
おいては、走査用ミラー11とレンズ12を介してレー
・ザ10からの光束をハーフミラ−13により2つに分
け、2つのミラー14.45により各々基板15の表面
と裏面に入射させ、走査用ミラー11を回転若しくは振
動させて基板15上を走査している。そして基板15か
らの直接の反射光及び透過光の光路から離れた位置に複
数の受光部16,17.18を設け、これら複数の受光
部16,17.18からの出力信号を用いて基板15上
の異物の存在を検出している。
Therefore, in the IC manufacturing process, it is essential to detect the presence of foreign matter on the substrate, and various inspection methods have been proposed. For example, FIG. 7 shows an example of a method that utilizes the property of foreign matter to scatter light isotropically. In the figure, a beam from a laser 10 is divided into two by a half mirror 13 via a scanning mirror 11 and a lens 12, and is made incident on the front and back surfaces of a substrate 15 by two mirrors 14 and 45, respectively. The scanning mirror 11 is rotated or vibrated to scan the substrate 15. A plurality of light receiving sections 16, 17.18 are provided at positions away from the optical path of direct reflected light and transmitted light from the substrate 15, and output signals from these plurality of light receiving sections 16, 17.18 are used to Detecting the presence of foreign matter on the top.

即ち回路パターンからの回折光は方向性が強い為、各受
光部からの出力値は異なるが異物に光束が入射すると入
射光束は等方的に散乱される為、複数の受光部からの出
力値が各々等しくなってくる。従ってこのときの出力値
を比較することにより異物の存在を検出している。
In other words, since the diffracted light from the circuit pattern has strong directionality, the output value from each light receiving part will be different, but when the light beam is incident on a foreign object, the incident light flux will be isotropically scattered, so the output value from multiple light receiving parts will be different. become equal. Therefore, the presence of foreign matter is detected by comparing the output values at this time.

又、第8図は異物が入射光束の偏光特性を乱す性質を利
用する方法の一例である。同図において偏光子19、走
査用ミラー11、そしてレンズ12を介してレーザ10
からの光束を所定の偏光状態の光束としハーフミラ−1
3により2つに分け、2つのミラー14.45により各
々基板15の表面と裏面に入射させて走査用ミラー11
により基板15上を走査している。そして基板15から
の直接の反射光及び透過光の光路から離れた位置に各々
検光子20.21を前方に配置した2つの受光部21.
23を設けている。そして回路パターンからの回折光と
異物からの散乱光との偏光比率の違いから生ずる受光量
の差を2つの受光部21.23より検出し、これにより
基板15上の回路パターンと異物とを弁別している。
Further, FIG. 8 shows an example of a method that utilizes the property that foreign matter disturbs the polarization characteristics of an incident light beam. In the figure, a laser 10 is transmitted through a polarizer 19, a scanning mirror 11, and a lens 12.
Half mirror 1
3, and the scanning mirror 11 is divided into two parts by two mirrors 14.
The substrate 15 is scanned by. Two light receiving sections 21.21 each have analyzers 20.21 disposed in front of them, respectively, at positions away from the optical paths of direct reflected light and transmitted light from the substrate 15.
There are 23. Then, the difference in the amount of light received due to the difference in polarization ratio between the diffracted light from the circuit pattern and the scattered light from the foreign object is detected by the two light receiving sections 21 and 23, thereby distinguishing between the circuit pattern on the board 15 and the foreign object. Separate.

しかしながら第7図、第8図に示す検出方法はいずれも
受光部には入射光束の直接の反射光及び透過光は入射し
ないが基板を走査中、走査線上のいくつかの点における
回路パターンからの各次数の回折光の一部が入射してし
まう。この為、回路パターンからの回折光と異物からの
散乱光の双方の出力差をとる場合、異物の反射率や形状
等が異ってくると双方の出力差が変動し異物の検出率が
低下してくる欠点があフた。
However, in both of the detection methods shown in Figs. 7 and 8, although the direct reflected light and transmitted light of the incident light beam do not enter the light receiving section, the detection method does not allow the direct reflected light or transmitted light of the incident light beam to enter the light receiving section, but when the board is being scanned, the detection method from the circuit pattern at several points on the scanning line is detected. A part of the diffracted light of each order ends up being incident. For this reason, when taking the output difference between the diffracted light from the circuit pattern and the scattered light from a foreign object, if the reflectance or shape of the foreign object differs, the output difference between both will fluctuate and the detection rate of the foreign object will decrease. The shortcomings that come with it are gone.

(発明が解決しようとする問題点) 本発明は基板上に存在しているゴミ等どのような状態の
異物であっても走査線上のすべての点で回路パターンと
高い精度で分離検出することのできる高い分離検出率を
有した表面状態測定装置の提供を目的とする。
(Problems to be Solved by the Invention) The present invention is capable of separating and detecting foreign matter such as dust on a board in any state from the circuit pattern at all points on the scanning line with high precision. The purpose of the present invention is to provide a surface condition measuring device that has a high separation detection rate.

(問題点を解決するための手段) 本発明は表面に回路パターンを有する基板の表面状態を
測定する装置において、光源手段と、前記光源手段から
の光束を基板の被測定面上で走査させるための走査手段
と、前記走査手段で走査された被測定面上からの光を受
光する一つの受光手段とを設け、前記走査手段で走査さ
れた被測定面上の異物からの散乱光を前記−つの受光手
段に導く受光光学系、前記受光光学系の光軸の被測定面
上への投影像の方向は前記走査手段で走査された被測定
面上の異物からの散乱光のみ出射する方向の被測定面上
への投影像の方向に平行であり、前記受光光学系は前記
走査手段で走査された被測定面上の各被走査点における
前記異物からの散乱光のみ出射する方向の散乱光を選択
して、前記−つの受光手段に導光する様配置する事によ
って前述問題点を解決している。
(Means for Solving the Problems) The present invention provides an apparatus for measuring the surface condition of a substrate having a circuit pattern on its surface, which includes a light source means and a device for scanning a light beam from the light source means on a surface to be measured of the substrate. scanning means, and one light receiving means for receiving light from the surface to be measured scanned by the scanning means, and detecting the scattered light from the foreign matter on the surface to be measured scanned by the scanning means. A light-receiving optical system guides the light-receiving optical system to two light-receiving means, and the direction of the projected image of the optical axis of the light-receiving optical system onto the surface to be measured is a direction in which only the scattered light from the foreign matter on the surface to be measured scanned by the scanning means is emitted. The light-receiving optical system is parallel to the direction of the projected image onto the surface to be measured, and the light-receiving optical system detects scattered light in a direction in which only the scattered light from the foreign object at each point on the surface to be scanned by the scanning means is emitted. The above-mentioned problem is solved by selecting and arranging the light receiving means so as to guide the light to the two light receiving means.

この他、本発明の特徴は実施例において記載されている
Other features of the invention are described in the Examples.

(実施例) 第1図は本発明の一実施例の光学系の概略図である。第
2図は第1図の投光系の光学原理図である。
(Embodiment) FIG. 1 is a schematic diagram of an optical system according to an embodiment of the present invention. FIG. 2 is a diagram of the optical principle of the light projection system of FIG. 1.

同図に於いて、1は光源であるレーザ1.2は光偏光器
であるポリゴンミラー(ポリゴン)、101は絞り、1
02はビームエキスパンダー61はf−θレンズ、5は
レチクル等の被測定物である基板、62はf−θレンズ
61を介して得られる散乱光を反射し、その光路を変え
るハーフミラ−である。9は散乱光を受光する受光素子
で、ハーフミラ−62で反射され−H位置paに集光し
た散乱光をレンズ8を介して受光する。
In the figure, 1 is a laser 1 which is a light source; 2 is a polygon mirror (polygon) which is an optical polarizer; 101 is an aperture;
02 is a beam expander 61 which is an f-theta lens, 5 is a substrate which is an object to be measured such as a reticle, and 62 is a half mirror which reflects the scattered light obtained through the f-theta lens 61 and changes its optical path. Reference numeral 9 denotes a light receiving element for receiving scattered light, which receives the scattered light reflected by the half mirror 62 and condensed at the -H position pa through the lens 8.

103は絞りである。103 is an aperture.

同図において光源であるレーザ1から発した平行ビーム
は第1の絞り(ピンホール)101でその径を制限され
た後ビームエキスパンダー102に入る。エキスパンダ
ー102の内部は、例えば第2図に示す様な凸レンズ1
10と111とから構成され、入射ビームの径を拡大し
てポリゴンミラー2に向けて射出する。
In the figure, a parallel beam emitted from a laser 1 as a light source enters a beam expander 102 after its diameter is limited by a first aperture (pinhole) 101. The inside of the expander 102 includes, for example, a convex lens 1 as shown in FIG.
10 and 111, the diameter of the incident beam is expanded and the beam is emitted toward the polygon mirror 2.

このエキスパンダーの働きは、ピンホール101とポリ
ゴンの反射点とを光学的共役関係に継ぐ事である(点線
)。こうする事により、ポリゴンの反射点が実買的にビ
ーム投光系の絞りとして作用する。その結果、ポリゴン
2の各回転位置においてその反射面上でのビームの中心
を通る光線が投光光束の主光線となり、f−〇レンズ6
1を介して基板5上ビーム走査線B、−B、の各位置に
入射する。この時f−θレンズ61の光軸は基板面に対
し角度α、かつ基板・の縦方向(A−A′方向)に対し
角度β傾いている。
The function of this expander is to establish an optical conjugate relationship between the pinhole 101 and the reflection point of the polygon (dotted line). By doing this, the reflection point of the polygon actually acts as a diaphragm for the beam projection system. As a result, the ray passing through the center of the beam on the reflecting surface at each rotational position of the polygon 2 becomes the chief ray of the projected light flux, and the f-〇 lens 6
1 to the respective positions of the beam scanning lines B and -B on the substrate 5. At this time, the optical axis of the f-theta lens 61 is inclined at an angle .alpha. with respect to the substrate surface and at an angle .beta. with respect to the vertical direction (A-A' direction) of the substrate.

この様にしてポリゴンミラー2を回転させ基板5上を点
B、から点B2方向に走査すると共に、基板5を矢印S
1若しくは矢印S2方向に移動させることにより基板5
上の全面を走査している。
In this way, the polygon mirror 2 is rotated to scan the substrate 5 from point B in the direction of point B2, and the substrate 5 is scanned by the arrow S.
1 or by moving in the direction of arrow S2.
The entire top surface is scanned.

そして基板50入射面の法線に対して入射側に受光光学
系の集光部(ここではf−θレンズ61)の光軸を設け
、基板5上の異物からの散乱光束を集光し、ハーフミラ
−62を介して点paに集光し、その後レンズ8により
受光素子9の受光面に導光している。PG′はf−θレ
ンズ61の後側焦点位置にあたる。
Then, the optical axis of the condensing section (in this case, the f-theta lens 61) of the light receiving optical system is provided on the incident side with respect to the normal to the incident surface of the substrate 50, and the scattered light flux from the foreign matter on the substrate 5 is condensed. The light is focused on a point pa via a half mirror 62, and then guided to a light receiving surface of a light receiving element 9 by a lens 8. PG' corresponds to the rear focal position of the f-theta lens 61.

f−θレンズ61とハーフミラ−62そしてレンズ8は
基板5からの異物散乱光を受光する光学系の一部を構成
している。これを説明する。本実施例ではレンズ61が
投光用と受光用に兼用されている。そして、レンズ61
の後側焦点PG′の位置あるいはその近傍に受光光束を
制限する開口絞り103を設ける。すると、基板上ビー
ム走査線の各位置において異物により散乱され、最終的
に受光素子9に到達する受光光束の主光線はこの絞り1
03中心を通る光線である。絞り103を通過した異物
散乱光は集光レンズ8の作用により受光素子9上に集め
られる。
The f-theta lens 61, the half mirror 62, and the lens 8 constitute part of an optical system that receives light scattered by foreign matter from the substrate 5. Let me explain this. In this embodiment, the lens 61 is used for both light projection and light reception. And lens 61
An aperture stop 103 is provided at or near the rear focal point PG' to limit the received light flux. Then, the chief ray of the received light beam that is scattered by foreign objects at each position of the beam scanning line on the substrate and finally reaches the light receiving element 9 is transmitted through this aperture 1.
03 is a ray of light passing through the center. The foreign object scattered light that has passed through the aperture 103 is collected onto the light receiving element 9 by the action of the condensing lens 8 .

第3図は本実施例における入射光束と基板5上の回路パ
ターンから生じる回折光の説明図である。今、基板上の
回路パターン面が模式的に描いた球体Sの赤道面に一致
しているとする。現在使用されている半導体回路パター
ンの基板上の回路パターンの形状は殆どが例えばTI 
、T2で示すその縦横方向で互いに直交しているパター
ンで構成されている。今、基板上のパターンT1及びパ
ターンT2に対し斜め上方の角度αと主パターンにより
生ずる回折光の方向とずらした角度βの球面上の点P0
を通る方向より光束を入射させる。
FIG. 3 is an explanatory diagram of the incident light beam and the diffracted light generated from the circuit pattern on the substrate 5 in this embodiment. Now, it is assumed that the circuit pattern surface on the board corresponds to the equatorial plane of the schematically drawn sphere S. Most of the shapes of circuit patterns on substrates of semiconductor circuit patterns currently used are, for example, TI.
, T2, which are orthogonal to each other in the vertical and horizontal directions. Now, a point P0 on the spherical surface with an angle α obliquely upward relative to the patterns T1 and T2 on the substrate and an angle β shifted from the direction of the diffracted light generated by the main pattern.
The light flux is incident from the direction passing through.

そうすると図中点A1点μ1点A′で形成される平面が
入射面となり基板5からの直接の反射光は矢印ビで示す
ように球体S上の点P0′を通過する方向に反射される
Then, the plane formed by point A1 point μ1 point A' in the figure becomes the plane of incidence, and the direct reflected light from the substrate 5 is reflected in the direction passing through point P0' on the sphere S, as shown by arrow B.

又パターンT2の方向と平行の球体S上の点Pから中心
点0に光束を入射させたとした場合の反射光の球体Sと
の交点をP′ とすると、点P′を中心にして各々のパ
ターンT r 、 T 2 と直交する方向に各次数の
回折像が形成する。前述の如く、回路パターンが孤立線
の場合はその回折像Qは第4図(A)に示す如く、パタ
ーンTと直交する方向に連続的に現われる。又、回路パ
ターンがメモリーのような繰り返しパターンの場合はそ
の回折像Qは第4図(B)に示す如く離散的に現われる
。又、第4図(C)は矢印51で示す方向より光束を基
板5上に入射させた場合、基板上の主パターンTI、T
2により回折光が矢印52.53で示す方向に、即ち入
射方向と角度βだけずれた方向に生じている様子を示し
ている。
Also, if a beam of light is incident on the center point 0 from a point P on the sphere S parallel to the direction of the pattern T2, and if the intersection of the reflected light with the sphere S is P', then each Diffraction images of each order are formed in a direction perpendicular to the patterns T r and T 2 . As mentioned above, when the circuit pattern is an isolated line, its diffraction image Q appears continuously in the direction orthogonal to the pattern T, as shown in FIG. 4(A). Further, when the circuit pattern is a repeating pattern such as a memory pattern, the diffraction image Q appears discretely as shown in FIG. 4(B). Moreover, FIG. 4(C) shows that when a light beam is incident on the substrate 5 from the direction shown by the arrow 51, the main patterns TI, T on the substrate are
2 shows that the diffracted light is generated in the directions indicated by arrows 52 and 53, that is, in a direction shifted by an angle β from the incident direction.

いずれも場合でも直接の反射光束の点P0及び点P′か
ら遠ざかる程、反射光及び回路パターンからの回折像の
強度は弱くなる。即ち点P。′から入射面内の法線μを
過ぎ入射光束の入射側の球体と交わる点P。の近傍まで
くると回折光の強度はかなり弱くなってくる。
In either case, the intensity of the reflected light and the diffraction image from the circuit pattern becomes weaker as the distance from the points P0 and P' of the directly reflected light beam increases. That is, point P. ', a point P that passes through the normal μ in the plane of incidence and intersects the sphere on the incident side of the incident light beam. When it comes to the vicinity of , the intensity of the diffracted light becomes considerably weaker.

これに対して異物の散乱光は等方向に生じるので入射側
にも多く現われる。
On the other hand, since the scattered light from foreign objects is generated in the same direction, a large amount appears on the incident side as well.

そこで本実施例では受光光束の主光線が直接の反射光の
光路からなるべく遠い位置、即ち入射面の法線μに対し
て光束入射側で、かつ基板5上の主パターンより生じる
回折光の出射方向とずらした、例えば点P0近傍位置に
くるようにすることにより、回路パターンからの回折光
の影響をなるべく少なくして基板5上の異物からの後方
散乱光のみを主に受光するようにしている。
Therefore, in this embodiment, the principal ray of the received light beam is located at a position as far as possible from the optical path of the directly reflected light, that is, on the light beam incident side with respect to the normal μ of the incident surface, and the diffracted light generated from the main pattern on the substrate 5 is emitted. By positioning it at a position shifted from the direction, for example near point P0, the influence of diffracted light from the circuit pattern is minimized and only the backscattered light from the foreign matter on the substrate 5 is mainly received. There is.

即ち受光光束の主光線が第3図に示すように基板5に対
して角度αとなり、かつ受光光束の主光線の基板5上へ
の投影像が、基板5の主パターンによる回折光の生じる
方向である、ここでは基板5の縦横方向となす角と平行
若しくは直交方向より角度βだけずれるようにしている
That is, the principal ray of the received light beam forms an angle α with respect to the substrate 5 as shown in FIG. Here, the angle β is shifted from the direction parallel to or perpendicular to the vertical and horizontal directions of the substrate 5.

以上のように基板に対する受光光束の主光線の位置を特
定し、これにより回路パターンに対する異物の分離検出
率を高めている。尚、分離検出率を高めるには仮りに受
光光束の主光線が点P0上にくるように配置したとする
と点P。 とP。の中心Oに対して張る角δが大きい程
例えば90゜くδく180°の範囲に設定するのが好ま
しい。
As described above, the position of the principal ray of the received light beam with respect to the substrate is specified, thereby increasing the rate of separating and detecting foreign matter from the circuit pattern. In order to increase the separation detection rate, suppose that the principal ray of the received light beam is placed on point P0. and P. The larger the angle δ with respect to the center O, the more preferably it is set in the range of, for example, 90° to δ to 180°.

実際の基板上の回路パターンには基板の縦横方向に対し
て30度、45度そして60度方向のパターンも存在す
る場合がある。このような基板に対しても本発明の効果
を十分発揮させる為には、受光光束の主光線の基板5面
上への投影像と基板5の縦横方向とのなす角が平行若し
くは直交方向より15度±5度の範囲内に設定するのが
良い。
An actual circuit pattern on a board may include patterns extending at 30 degrees, 45 degrees, and 60 degrees with respect to the vertical and horizontal directions of the board. In order to fully exhibit the effects of the present invention on such a substrate, it is necessary to make the angle between the projected image of the chief ray of the received light beam onto the surface of the substrate 5 and the longitudinal and lateral directions of the substrate 5 from parallel or orthogonal directions. It is best to set it within the range of 15 degrees ± 5 degrees.

これを主たる回折パターンの方向に関連づけて換言する
と、基板5上の回路パターンにより互いに略直交する方
向(基板5へ投影してみると)に生ずる主たる2つ回折
パターンの方向のいずれか一方と、受光光束の主光線の
基板5への投影像との成す角が15度±5度の範囲内に
設定するということである。
In other words, in relation to the direction of the main diffraction pattern, one of the two main diffraction pattern directions generated by the circuit pattern on the substrate 5 in directions substantially orthogonal to each other (when projected onto the substrate 5), This means that the angle formed by the principal ray of the received light beam and the projected image onto the substrate 5 is set within the range of 15 degrees ± 5 degrees.

第5図、第6図は、第1図の光学配置をとった時に、基
板5上各スキャン位fi(L、O,R)において入射ビ
ームの主光線(図中、実線)と受光散乱光束の主光線(
図中、点線)の基板5上への線の投影像が投光系光軸の
基板5上への投影像00′に平行で基板5の縦横方向に
対し、βの角度をもっている。この為各走査点は常に同
じ方向から照明される事になり、全走査域で照明状態が
等しいこの条件をつくるには、第2図でポリゴンミラー
の反射点をf−θレンズ61の前側焦点位置におく(投
光系がテレセントリック)。又、この時、受光光束の各
主光線の基板5上投影像は角レンズの後側焦点位置P。
5 and 6 show the principal ray of the incident beam (solid line in the figure) and the received scattered light flux at each scanning position fi (L, O, R) on the substrate 5 when the optical arrangement shown in FIG. 1 is taken. The chief ray of (
In the figure, the projected image of the line (dotted line) onto the substrate 5 is parallel to the projected image 00' of the optical axis of the projection system onto the substrate 5, and has an angle of β with respect to the longitudinal and lateral directions of the substrate 5. For this reason, each scanning point is always illuminated from the same direction, and in order to create this condition where the illumination state is equal in the entire scanning area, the reflection point of the polygon mirror is set to the front focal point of the f-theta lens 61 in FIG. (The floodlight system is telecentric). Also, at this time, the projected image of each principal ray of the received light beam on the substrate 5 is at the rear focal point P of the square lens.

′の近傍に開口絞り103を設ける事で達成される。い
いかえると、開口絞り103は走査線上の各点からの受
光光束の各主光線の投影像が角度15゜±5゜の範囲に
ある様なP。′近傍の範囲に設ける。これにより各走査
点から常に実質的に同じ方向(ここでは回路パターンか
らの回折光の影響をなるべく少なくして基板5上の異物
からの散乱光のみを主に受光する方向、即ち角度β方向
)に散乱する光のみを受光する事になり、全走査域で受
光状態が等しくできる。第3図を用いて詳しく説明する
と、レチクル上、ビーム走査線の各点がいま点Oに相当
する。第1図の構成を第3図にあてはめると、第1図で
は入射レンズ61側への戻り散乱光を受光しているので
、実質的に第3図の球体上P0の方向に常に受光開口を
設けている事になる。先に第3図について説明したよう
に、基板上の主たる回路パターンの回折光は黒丸の方向
に跳ぶので、p。
This is achieved by providing an aperture stop 103 near '. In other words, the aperture stop 103 is such that the projected image of each chief ray of the received light beam from each point on the scanning line is within an angle range of 15°±5°. ′ in the vicinity. As a result, from each scanning point, the direction is always substantially the same (here, the direction in which only the scattered light from the foreign matter on the substrate 5 is mainly received by minimizing the influence of the diffracted light from the circuit pattern, that is, the angle β direction) This means that only the light that is scattered is received, and the light reception state can be made equal in the entire scanning area. To explain in detail using FIG. 3, each point of the beam scanning line on the reticle corresponds to the current point O. Applying the configuration of FIG. 1 to FIG. 3, since in FIG. 1 the returning scattered light toward the input lens 61 side is received, the light receiving aperture is essentially always in the direction of P0 on the sphere in FIG. 3. This means that it has been set up. As previously explained with reference to FIG. 3, since the diffracted light of the main circuit pattern on the board jumps in the direction of the black circle, p.

の近傍では受光されない。球体の赤道面が基板5面上に
相当し、この赤道面上に受光光束の主光線(opo)の
投影像が角度β方向に概ね一致していれば、本発明の主
旨に則り、パターン回折光を除外して、異物散乱光だけ
を選択的に受光する事ができる。この時のβの値は回路
パターンからの散乱光を避ける為15°±5°とする。
Light is not received near . If the equatorial plane of the sphere corresponds to the surface of the substrate 5, and the projected image of the chief ray (OPO) of the received light beam on this equatorial plane roughly coincides with the angle β direction, pattern diffraction can be performed according to the gist of the present invention. It is possible to exclude light and selectively receive only light scattered by foreign objects. The value of β at this time is set to 15°±5° in order to avoid scattered light from the circuit pattern.

そして、ビーム走査線上の各点において、このような入
射ビームの主光線と受光光束の主光線とのレチクル面上
投影像のずれ角(第5図中β−β、あるいはβ−βR)
は±10@以内である事が望ましい。
At each point on the beam scanning line, the deviation angle of the projected image on the reticle surface between the principal ray of the incident beam and the principal ray of the received light beam (β-β or β-βR in Fig. 5) is determined.
is preferably within ±10@.

第6図は第5図とは対照的に、特に受光光束の各主光線
の投影像が、受光系光軸のレチクル上への投影像00′
に平行である構成をとる。こうするには、第1図で受光
レンズ61の後側焦点位置場合においても入射ビームの
主光線投影像は走査望ましい。一般には、完全に投光系
や受光系がテレセントリック系であるのが望ましいが、
本発明の効果(レチクル上全域にわたって等しくパター
ン出力を低減する条件を作り出す事)を得るには、レチ
クル上ビーム走査線上の各点において、受光光束の各々
の主光線のレチクル上投影像が角度・β方向(基板5の
縦あるいは横方向に対し15°±5°方向)に概一致し
ていれば良い。好ましくは、入射ビームと受光光束の両
投影像の成す角が±10°以内が良い。
In contrast to FIG. 5, FIG. 6 shows that, in particular, the projected image of each principal ray of the received light beam is the projected image 00' of the optical axis of the light receiving system on the reticle.
The configuration is parallel to . To do this, it is desirable to scan the principal ray projection image of the incident beam even when the focal point is on the rear side of the light-receiving lens 61 in FIG. Generally, it is desirable that the light emitting system and light receiving system be completely telecentric, but
In order to obtain the effect of the present invention (creating conditions for reducing the pattern output equally over the entire area on the reticle), at each point on the beam scanning line on the reticle, the projected image of each principal ray of the received light beam on the reticle must be It suffices if it approximately coincides with the β direction (15°±5° direction with respect to the vertical or horizontal direction of the substrate 5). Preferably, the angle formed by the projected images of the incident beam and the received light beam is within ±10°.

本実施例において、レンズ61は投光用、受光用の2つ
のレンズに別けても良い。
In this embodiment, the lens 61 may be divided into two lenses, one for projecting light and one for receiving light.

(発明の効果) 本発明によれば基板上の回路パターンから生じる回折光
を走査線上の全点で空間配置的に避けて基板上に存在し
ている異物からの散乱光束だけを選択的に受光すること
ができる為、回路パターンに対する異物の分離検出率の
高い表面状態測定装置を達成することができる。
(Effects of the Invention) According to the present invention, the diffracted light generated from the circuit pattern on the board is spatially avoided at all points on the scanning line, and only the scattered light flux from the foreign matter existing on the board is selectively received. Therefore, it is possible to achieve a surface condition measuring device with a high rate of separating and detecting foreign matter from a circuit pattern.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の光学系の概略図、第2図は
第1図の実施例の投光系の光学原理図、第3図は第1図
の実施例における入射光束と回路パターンによる回折光
の説明図、打4図(A)。 (B)、(C)は回路パターンと回折像との関係を示す
説明図、第5図は第1図の実施例における入射ビームと
受光光束の関係の概略図、第6図は本発明の他の一実施
例の入射ビームと受光光束の関係の概略図、第7図、第
8図は各々従来の表面状態測定装置の一例である。図中
1は光源、2はポリゴンミラー 4は投光部、5は基板
、6は集光部、7はミラー 8はレンズ、9は受光面、
10は光学系、11はハーフミラ−である。
1 is a schematic diagram of an optical system according to an embodiment of the present invention, FIG. 2 is a diagram of the optical principle of the light projection system according to the embodiment of FIG. 1, and FIG. 3 is a diagram showing the incident light flux in the embodiment of FIG. An explanatory diagram of diffracted light due to a circuit pattern, Figure 4 (A). (B) and (C) are explanatory diagrams showing the relationship between the circuit pattern and the diffraction image, FIG. 5 is a schematic diagram of the relationship between the incident beam and the received light flux in the embodiment of FIG. 1, and FIG. The schematic diagrams of the relationship between the incident beam and the received light beam in another embodiment, FIGS. 7 and 8, are each an example of a conventional surface condition measuring device. In the figure, 1 is a light source, 2 is a polygon mirror, 4 is a light emitter, 5 is a substrate, 6 is a condenser, 7 is a mirror, 8 is a lens, 9 is a light receiving surface,
10 is an optical system, and 11 is a half mirror.

Claims (4)

【特許請求の範囲】[Claims] (1)表面に回路パターンを有する基板の表面状態を測
定する装置において、 光源手段と、 前記光源手段からの光束を基板の被測定面上で走査させ
るための走査手段と、 前記走査手段で走査された被測定面上からの光を受光す
る一つの受光手段とを有し、 前記走査手段で走査された被測定面上の異物からの散乱
光を前記一つの受光手段に導く受光光学系、前記受光光
学系の光軸の被測定面上への投影像の方向は前記走査手
段で走査された被測定面上の異物からの散乱光のみ出射
する方向の被測定面上への投影像の方向に平行であり、
前記受光光学系は前記走査手段で走査された被測定面上
の各被走査点における前記異物からの散乱光のみ出射す
る方向の散乱光を選択して前記一つの受光手段に導光す
る様配置されている事を特徴とする表面状態測定装置。
(1) An apparatus for measuring the surface condition of a substrate having a circuit pattern on its surface, comprising: a light source means; a scanning means for scanning a light beam from the light source means on the surface to be measured of the substrate; and scanning by the scanning means. a light-receiving optical system, the light-receiving optical system having one light-receiving means for receiving light from a surface to be measured that has been scanned by the scanning means, and guiding scattered light from a foreign object on the surface to be measured scanned by the scanning means to the one light-receiving means; The direction of the projected image of the optical axis of the light receiving optical system on the surface to be measured is such that the projected image on the surface to be measured is in a direction in which only the scattered light from the foreign matter on the surface to be measured scanned by the scanning means is emitted. parallel to the direction,
The light-receiving optical system is arranged so as to select the scattered light in a direction in which only the scattered light from the foreign object at each scanned point on the surface to be measured scanned by the scanning means is emitted, and guide the selected light to the one light-receiving means. A surface condition measuring device characterized by:
(2)前記受光光学系は、前記被測定面上の前記走査手
段によって光走査された各点から出射する散乱光のうち
、主光線の前記被測定面上への投影像が前記被測定面の
縦横方向に対し15゜±5゜の角度を成す光束のみを前
記受光手段に導くように配置される事を特徴とする特許
請求の範囲第1項記載の表面状態測定装置。
(2) The light-receiving optical system is configured such that a projection image of a chief ray onto the surface to be measured is a projected image of the principal ray on the surface to be measured among the scattered lights emitted from each point optically scanned by the scanning means on the surface to be measured. 2. The surface condition measuring device according to claim 1, wherein the surface condition measuring device is arranged so as to guide only the light beam forming an angle of 15°±5° with respect to the longitudinal and lateral directions of the surface to the light receiving means.
(3)前記受光光学系は前記被測定面上から散乱光を受
ける対物光学系を有し、前記対物光学系は光軸の前記被
測定面上への投影像が被測定面の縦横方向に対し15゜
±5゜の角度を成し、かつ後側焦点位置に開口絞りを有
する事を特徴とする特許請求の範囲第1項記載の表面状
態測定装置。
(3) The light-receiving optical system includes an objective optical system that receives scattered light from above the surface to be measured, and the objective optical system has an optical axis that projects an image onto the surface to be measured in the vertical and horizontal directions of the surface to be measured. 2. The surface condition measuring device according to claim 1, further comprising an aperture diaphragm forming an angle of 15°±5° with respect to the rear focal point position.
(4)前記受光光学系は、前記被測定面上の前記走査手
段によって光走査された各点から出射された散乱光のう
ち、主光線の前記被測定面上への投影像が前記走査手段
によって前記各点に走査される走査光束の主光線の投影
像に対し±10゜の角度を成す光束のみを前記受光手段
に導くように配置される事を特徴とする特許請求の範囲
第1項記載の表面状態測定装置。
(4) The light-receiving optical system is configured such that a projection image of a chief ray onto the surface to be measured, out of the scattered light emitted from each point optically scanned by the scanning means on the surface to be measured, is configured to be Claim 1, characterized in that the light receiving means is arranged so as to guide only the light beam forming an angle of ±10° to the projected image of the chief ray of the scanning light beam scanned to each point by the light receiving means. The surface condition measuring device described.
JP63198280A 1988-08-08 1988-08-08 Surface condition measuring device Expired - Lifetime JPH0675039B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63198280A JPH0675039B2 (en) 1988-08-08 1988-08-08 Surface condition measuring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63198280A JPH0675039B2 (en) 1988-08-08 1988-08-08 Surface condition measuring device

Publications (2)

Publication Number Publication Date
JPH0247541A true JPH0247541A (en) 1990-02-16
JPH0675039B2 JPH0675039B2 (en) 1994-09-21

Family

ID=16388500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63198280A Expired - Lifetime JPH0675039B2 (en) 1988-08-08 1988-08-08 Surface condition measuring device

Country Status (1)

Country Link
JP (1) JPH0675039B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557446A (en) * 1992-04-17 1996-09-17 Canon Kabushiki Kaisha Optical scanning apparatus having tilted scanning lens system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188943A (en) * 1986-02-14 1987-08-18 Canon Inc Surface condition measuring apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188943A (en) * 1986-02-14 1987-08-18 Canon Inc Surface condition measuring apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557446A (en) * 1992-04-17 1996-09-17 Canon Kabushiki Kaisha Optical scanning apparatus having tilted scanning lens system

Also Published As

Publication number Publication date
JPH0675039B2 (en) 1994-09-21

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