JPH0248626B2 - HAKUMAKUKEISEIHOHOTOSONOSOCHI - Google Patents
HAKUMAKUKEISEIHOHOTOSONOSOCHIInfo
- Publication number
- JPH0248626B2 JPH0248626B2 JP13863088A JP13863088A JPH0248626B2 JP H0248626 B2 JPH0248626 B2 JP H0248626B2 JP 13863088 A JP13863088 A JP 13863088A JP 13863088 A JP13863088 A JP 13863088A JP H0248626 B2 JPH0248626 B2 JP H0248626B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- film forming
- substrate
- atmospheric pressure
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229920000573 polyethylene Polymers 0.000 description 9
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 7
- 239000005977 Ethylene Substances 0.000 description 7
- 239000004698 Polyethylene Substances 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 4
- 239000006059 cover glass Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
（技術分野）
この発明は、薄膜形成方法とその装置に関する
ものである。さらに詳しくは、この発明は、大気
圧下のグロー放電プラズマによるプラズマ製膜法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a thin film forming method and an apparatus therefor. More specifically, the present invention relates to a plasma film forming method using glow discharge plasma under atmospheric pressure.
（従来技術）
従来より、低圧グロー放電プラズマによる製膜
法が広く知られており、産業的にも様々な分野に
応用されてもいる。この低圧グロー放電プラズマ
による製膜法としては、有機化合物気体のプラズ
マ化によつて薄膜形成する、いわゆる有機プラズ
マコーテイング方法があることも知られている。(Prior Art) Film forming methods using low-pressure glow discharge plasma have been widely known and have been applied to various industrial fields. As a film forming method using low-pressure glow discharge plasma, it is also known that there is a so-called organic plasma coating method in which a thin film is formed by converting an organic compound gas into plasma.
たとえば真空容器内において炭化水素ガスをプ
ラズマ状として、シリコン基板またはガラス基板
上にアモルフアス炭素膜を析出形成する方法や、
エチレンなどの不飽和炭化水素のプラズマ重合膜
を形成する方法などがある。 For example, a method of depositing and forming an amorphous carbon film on a silicon substrate or a glass substrate using hydrocarbon gas in a plasma state in a vacuum container;
There is a method of forming a plasma polymerized film of unsaturated hydrocarbon such as ethylene.
しかしながら、これらの従来より知られている
低圧グロー放電プラズマによる製膜法は、いずれ
も１×10-5〜１×10-3Torr程度の真空下での反
応となるため、この低圧条件形成の装置、設備が
必要であり、かつ大面積基板への製膜が難しくか
つ製造コストも高価なものとならざるを得ないと
いう欠点があつた。 However, these conventionally known film forming methods using low-pressure glow discharge plasma all involve reactions in a vacuum of about 1×10 -5 to 1×10 -3 Torr, so it is difficult to form this low-pressure condition. This method has disadvantages in that it requires equipment and equipment, is difficult to form a film on a large-area substrate, and has high manufacturing costs.
この発明の発明者は、このような欠点を克服す
るために鋭意検討し、装置、設備の低コスト化
と、大面積基板への製膜の容易な大気圧下でのグ
ロー放電プラズマによる製膜法をここに完成し
た。この背景となつたのは、発明者による長年の
オゾン発生用無声放電の研究と、プラズマ製膜法
についての反応機構の解析であつた。 The inventor of this invention has made extensive studies to overcome these drawbacks, and has developed a method to reduce the cost of equipment and equipment, and to form a film using glow discharge plasma under atmospheric pressure, which facilitates film formation on large-area substrates. The law has been completed here. The background to this was the inventor's long-term research on silent discharge for ozone generation and analysis of the reaction mechanism of plasma film forming methods.
大気圧下でのグロー放電プラズマによる反応に
ついては、すでにこの発明者は、プラスチツク表
面の合弗素気体プラズマによる表面処理法を提案
しており、この処理法をさらに発展させて製膜法
を完成するに至つている。 Regarding the reaction using glow discharge plasma under atmospheric pressure, this inventor has already proposed a surface treatment method using fluorine gas plasma on the surface of plastic, and will further develop this treatment method to complete a film forming method. It has reached this point.
（発明の目的）
この発明は、以上の通りの事情に鑑みてなされ
たものであり、従来の低圧グロー放電プラズマ製
膜法の欠点を解消し、装置および設備のコスト低
下を図り、大面積基板への薄膜形成の容易な、大
気圧下グロー放電プラズマによる製膜方法とその
装置を提供することを目的としている。(Objective of the Invention) The present invention has been made in view of the above-mentioned circumstances, and aims to solve the drawbacks of the conventional low-pressure glow discharge plasma film forming method, reduce the cost of equipment and equipment, and produce a large-area substrate. The purpose of the present invention is to provide a film forming method using glow discharge plasma under atmospheric pressure, which facilitates the formation of a thin film, and an apparatus therefor.
（発明の開示）
この発明は、上記の目的を実現するために、複
数の細線からなる上部電極を有する反応容器内に
おいて、不活性ガスと混合して導入したモノマー
気体を大気圧下にプラズマ状として基体表面に薄
膜形成することを特徴とする薄膜形成方法を提供
する。また、この発明は、この方法に好適に用い
ることのできる製膜装置を提供するものでもあ
る。(Disclosure of the Invention) In order to achieve the above-mentioned object, the present invention aims to convert a monomer gas, which has been mixed with an inert gas and introduced into a reaction vessel having an upper electrode made of a plurality of thin wires, into a plasma form under atmospheric pressure. The present invention provides a thin film forming method characterized by forming a thin film on the surface of a substrate. The present invention also provides a film forming apparatus that can be suitably used in this method.
製膜装置としては、複数の細線からなる上部電
極を有し、さらには、基体を配置する下部電極の
上面に固体誘電体を配し、基体表面近傍で気体を
均一に拡散する多孔管を配置しているものが示さ
れる。これを図示したものが第１図である。 The film forming equipment has an upper electrode made of multiple thin wires, a solid dielectric material is arranged on the upper surface of the lower electrode on which the substrate is placed, and a porous tube is arranged to uniformly diffuse gas near the substrate surface. It shows what you are doing. This is illustrated in FIG. 1.
この第１図は一つの例であるが、たとえばパイ
レツクス製のベルジヤー１からなる反応容器内に
高電圧を印加する上部電極２と下部電極３とを有
し、上部電極２は複数の細線によつて構成してい
る。また、下部電極３には、その上面にガラス、
セラミツクス、プラスチツク等の固体誘電体４を
設けている。この固体誘電体４の上に板状体等の
形状の基体５を装置する。 This FIG. 1 is one example, but a reaction vessel consisting of a bell gear 1 made of Pyrex, for example, has an upper electrode 2 and a lower electrode 3 for applying a high voltage, and the upper electrode 2 is formed by a plurality of thin wires. It is composed of Further, the lower electrode 3 has glass on its upper surface.
A solid dielectric material 4 such as ceramics or plastic is provided. A base 5 in the form of a plate or the like is placed on top of this solid dielectric 4 .
He、Ne、ArやN2等の不活性ガスと薄膜形成
原料としての炭化水素等のモノマー気体との混合
ガスは、導入口６より複数の開孔７を有する多孔
管８に導入し、この開孔７より、基体５に対して
均一に混合ガスが拡散するようにしている。未反
応気体、不活性ガス等は、反応容器の気体出口よ
り排出する。 A mixed gas of an inert gas such as He, Ne, Ar, or N 2 and a monomer gas such as a hydrocarbon as a raw material for forming a thin film is introduced from an inlet 6 into a porous pipe 8 having a plurality of openings 7. The mixed gas is uniformly diffused into the base 5 through the openings 7. Unreacted gas, inert gas, etc. are discharged from the gas outlet of the reaction vessel.
下部電極３部には、温度センサー９および加熱
ヒーター１０を装置してもいる。冷却装置を備え
ることもできる。 The lower electrode 3 is also equipped with a temperature sensor 9 and a heater 10. A cooling device may also be provided.
たとえば以上のように例示することのできるこ
の発明の製膜装置においては、ベルジヤー１内の
反応域は、大気圧の条件に保たれている。このた
め、従来の低圧グロー放電プラズマ製膜装置のよ
うに、真空系の装置や設備は必要としない。 For example, in the film forming apparatus of the present invention, which can be exemplified above, the reaction zone within the bell jar 1 is maintained at atmospheric pressure. Therefore, unlike conventional low-pressure glow discharge plasma film forming apparatuses, vacuum-based equipment and equipment are not required.
反応に使用する不活性ガスとしては、前記の通
り、He、Ne、Ar、N2等の適宜なものを単体ま
たは混合体として用いることができるが、生成し
た薄膜に対するスパツタリングを最少とするため
には質量の軽いHeを用いるのが好ましい。この
不活性ガスと混合する薄膜形成原料としてのモノ
マー気体は、エチレン、プロピレン等の不飽和炭
化水素、ハロゲンその他の官能基を有する、もし
くは有しない炭化水素類の任意のものを用い、所
望のプラズマ重合膜を形成することができる。 As the inert gas used in the reaction, as mentioned above, appropriate gases such as He, Ne, Ar, N2 , etc. can be used singly or as a mixture, but in order to minimize sputtering on the formed thin film, It is preferable to use He, which has a light mass. The monomer gas used as a thin film forming raw material to be mixed with this inert gas is any one of unsaturated hydrocarbons such as ethylene and propylene, and hydrocarbons with or without halogen and other functional groups. A polymeric film can be formed.
不活性ガスとモノマー気体との混合比は格別限
定的ではないが、ガス濃度を約90％以上とするこ
とが好ましい。気体も複数種のものを混合して使
してもよい。 Although the mixing ratio of the inert gas and the monomer gas is not particularly limited, it is preferable that the gas concentration is about 90% or more. A mixture of multiple types of gases may also be used.
この混合ガスのプラズマ化は、ガスが基体近傍
のプラズマ域に均一に拡散供給される状態におい
て行うことが望ましい。このための手段として
は、第１図に示した多孔管８、あるいはその他の
適宜な手段とすることができる。装置の大きさ、
電極の大きさによつてその形状、構造を選択すれ
ばよい、この場合、外部気体（酸素、窒素等）の
流入を妨ぐようにする。 It is desirable to turn the mixed gas into plasma in a state where the gas is uniformly diffused and supplied to the plasma region near the substrate. As a means for this purpose, the perforated tube 8 shown in FIG. 1 or other suitable means can be used. size of the device,
The shape and structure of the electrode may be selected depending on the size of the electrode. In this case, the inflow of external gas (oxygen, nitrogen, etc.) should be prevented.
プラズマ形成は高電圧の印加によつて行うが、
その際の電圧は、生成する重合膜の耐熱性、生成
速度等に応じて決めることができる。周波数、電
圧の制御により製膜速度は制御できる。たとえば
第１図に示したように、上部電極２に細線を用
い、かつ、下部電極３には固体誘電体４を配設す
ることにより、製膜の均一化、基板５の中心と周
辺との膜厚の差を小さくすること、安定なグロー
放電の生成を可能とする。この第１図の場合に
は、上部電極１は回転させることにより、さらに
製膜を効果的なものとすることができる。 Plasma formation is performed by applying high voltage,
The voltage at that time can be determined depending on the heat resistance of the polymer film to be produced, the production rate, etc. Film forming speed can be controlled by controlling frequency and voltage. For example, as shown in FIG. 1, by using a thin wire for the upper electrode 2 and disposing a solid dielectric material 4 for the lower electrode 3, uniform film formation can be achieved, and the center and periphery of the substrate 5 can be made uniform. By reducing the difference in film thickness, stable glow discharge can be generated. In the case of FIG. 1, by rotating the upper electrode 1, film formation can be made more effective.
通常、大気圧の条件下ではグロー放電は容易に
は生じないが、不活性ガスを用いること、複数の
細線からなる電極を用いること、さらには固体誘
電体を用いることにより高安定なグロー放電とそ
のプラズマ生成を可能とする。 Normally, glow discharge does not occur easily under atmospheric pressure conditions, but highly stable glow discharge can be achieved by using an inert gas, using electrodes made of multiple thin wires, and using solid dielectrics. This enables plasma generation.
なお、基体としては、セラミツクス、ガラス、
プラスチツクなどの適宜な材料を使用することが
でき、また、使用する気体によつては、反応促進
用のハロゲン、酸素、水素などをさらに混合して
もよい。 The base material may be ceramics, glass,
A suitable material such as plastic can be used, and depending on the gas used, halogen, oxygen, hydrogen, etc. for promoting the reaction may be further mixed.
次に実施例を示し、さらに詳しくこの発明につ
いて説明する。 Next, examples will be shown to explain the present invention in more detail.
実施例 １
第１図に示した装置（電極直径30mm巾、電極間
距離10mm）を用い、次の条件においてエチレンモ
ノマーからポリエチレン膜を形成した。Example 1 A polyethylene film was formed from ethylene monomer under the following conditions using the apparatus shown in FIG. 1 (electrode diameter: 30 mm width, distance between electrodes: 10 mm).
(a) 混合ガス
He：4500SCCM
エチレン：3.6SCCM
(b) グロー放電
大気圧
3000Hz、1.05kV、3mA
(c) 基板
カバーガラス
基板表面に、製膜速度12500A／2hrでポリエチ
レン膜を得た。透明で、付着強度は良好であつ
た。(a) Mixed gas He: 4500SCCM Ethylene: 3.6SCCM (b) Glow discharge Atmospheric pressure 3000Hz, 1.05kV, 3mA (c) Substrate Cover glass A polyethylene film was obtained on the substrate surface at a film formation rate of 12500A/2hr. It was transparent and had good adhesion strength.
実施例 ２
実施例１と同様にして、次の条件でエチレンの
重合膜を形成した。Example 2 An ethylene polymer film was formed in the same manner as in Example 1 under the following conditions.
(a) 混合ガス
He：4500SCCM
エチレン：6.0SCCM
(b) グロー放電
大気圧
3000Hz、1.25kV、6mA
(c) 基板
カバーガラス
製膜速度2100A／2hrでポリエチレン膜を得た。
透明で、付着強度は良好であつた。(a) Mixed gas He: 4500SCCM Ethylene: 6.0SCCM (b) Glow discharge Atmospheric pressure 3000Hz, 1.25kV, 6mA (c) Substrate Cover glass A polyethylene film was obtained at a film forming rate of 2100A/2hr.
It was transparent and had good adhesion strength.
実施例 ３
実施例１と同様にして、次の条件でエチレンの
重合膜を形成した。Example 3 An ethylene polymer film was formed in the same manner as in Example 1 under the following conditions.
(a) 混合ガス
He：4500SCCM
エチレン：2.5SCCM
(b) グロー放電
大気圧
3000Hz、1.01kV、2.2mA
(c) 基板
カバーガラス
製膜速度16800A／5.5hrでポリエチレン膜を得
た。透明で、付着強度は良好であつた。(a) Mixed gas He: 4500SCCM Ethylene: 2.5SCCM (b) Glow discharge Atmospheric pressure 3000Hz, 1.01kV, 2.2mA (c) Substrate Cover glass A polyethylene film was obtained at a film forming rate of 16800A/5.5hr. It was transparent and had good adhesion strength.
実施例 ４
実施例１と同様にして、次の条件でエチレンの
重合膜を形成した。Example 4 An ethylene polymer film was formed in the same manner as in Example 1 under the following conditions.
(a) 混合ガス
He：4500SCCM
エチレン：3.6SCCM
(c) グロー放電
大気圧
3000Hz、1.14kV、3mA
(c) 基板
石英0.2mm厚グラス
製膜速度9000A／2hrでポリエチレン膜を得た。
透明で、付着強度は良好であつた。(a) Mixed gas He: 4500SCCM Ethylene: 3.6SCCM (c) Glow discharge Atmospheric pressure 3000Hz, 1.14kV, 3mA (c) Substrate 0.2mm thick quartz glass A polyethylene film was obtained at a film formation rate of 9000A/2hr.
It was transparent and had good adhesion strength.
このポリエチレン膜について厚みを評価したと
ころ、実施例１〜３と同様に、電極（直径30mm）
の周辺および中心部分で各々製膜した部分での厚
みのむらは極めて少なかつた。 When the thickness of this polyethylene film was evaluated, the electrode (diameter 30 mm) was found to be similar to Examples 1 to 3.
There was extremely little unevenness in the thickness at the peripheral and central portions of the film.
（発明の効果）
この発明は、以上詳しく説明した通り、従来の
低圧グロー放電プラズマ製膜法に比べて、真空系
の形成のための装置、設備が必要でなく、しかも
そのための操作も不要であり、コスト低下効果に
優れ、かつ、取扱いは容易である。試料等の出し
入れによる圧力変化はなく、製膜時の圧力変動に
よる影響も小さい。(Effects of the Invention) As explained in detail above, the present invention does not require equipment or equipment for forming a vacuum system, nor does it require any operations, compared to the conventional low-pressure glow discharge plasma film forming method. It has an excellent cost reduction effect and is easy to handle. There is no pressure change due to loading and unloading of samples, etc., and the influence of pressure fluctuations during film formation is small.
しかもこの発明により、大気圧下での操作であ
つて、装置が簡単なことから、大面積基板への重
合薄膜形成も容易となる。従来に比べて真空系形
成にともなう規模の制約も小さくて済む。 Moreover, according to the present invention, since the operation is performed under atmospheric pressure and the apparatus is simple, it becomes easy to form a polymeric thin film on a large-area substrate. Compared to the conventional method, there are fewer restrictions on the scale of vacuum system formation.
得られた薄膜の周辺と中心部の厚み差も小さ
い。 The difference in thickness between the periphery and center of the obtained thin film is also small.
第１図は、この発明の実施例としての製膜装置
について示した斜視断面図である。
１……ベルジヤー、２……上部電極、３……下
部電極、４……固体誘電体、５……基体、６……
混合ガス導入口、７……開孔、８……多孔管、９
……温度センサー、１０……ヒーター。
FIG. 1 is a perspective sectional view showing a film forming apparatus as an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Belgear, 2... Upper electrode, 3... Lower electrode, 4... Solid dielectric, 5... Substrate, 6...
Mixed gas inlet, 7... Open hole, 8... Porous pipe, 9
...Temperature sensor, 10...Heater.
Claims (1)
器内において、不活性ガスと混合して導入したモ
ノマー気体を大気圧下にプラズマ状として基体表
面に薄膜形成することを特徴とする薄膜形成方
法。 ２ 基体を配置する下部電極上面に固体誘電体を
配設してなる請求項１記載の薄膜形成方法。 ３ 請求項１記載の反応容器内に、基板表面近傍
で気体を均一に拡散する多孔管を配置してなる大
気圧プラズマ製膜装置。 ４ 下部電極上面に固体誘電体を配設してなる請
求項３記載の大気圧プラズマ製膜装置。[Claims] 1. A method characterized by forming a thin film on the surface of a substrate in a reaction vessel having an upper electrode made of a plurality of thin wires, in which a monomer gas mixed with an inert gas is turned into a plasma under atmospheric pressure. A method for forming thin films. 2. The thin film forming method according to claim 1, wherein a solid dielectric is disposed on the upper surface of the lower electrode on which the substrate is disposed. 3. An atmospheric pressure plasma film forming apparatus comprising a porous tube disposed in the reaction vessel according to claim 1 to uniformly diffuse gas near the surface of the substrate. 4. The atmospheric pressure plasma film forming apparatus according to claim 3, wherein a solid dielectric is disposed on the upper surface of the lower electrode.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13863088A JPH0248626B2 (en) | 1988-06-06 | 1988-06-06 | HAKUMAKUKEISEIHOHOTOSONOSOCHI |
| DE68922244T DE68922244T2 (en) | 1988-06-06 | 1989-06-06 | Process for performing a plasma reaction at atmospheric pressure. |
| EP89305671A EP0346055B1 (en) | 1988-06-06 | 1989-06-06 | Method for causing plasma reaction under atmospheric pressure |
| US07/522,462 US5126164A (en) | 1988-06-06 | 1990-05-14 | Method of forming a thin polymeric film by plasma reaction under atmospheric pressure |
| US07/774,143 US5275665A (en) | 1988-06-06 | 1991-10-15 | Method and apparatus for causing plasma reaction under atmospheric pressure |
| US08/401,290 US5733610A (en) | 1988-06-06 | 1995-03-09 | Atmospheric pressure plasma reaction method of forming a hydrophobic film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13863088A JPH0248626B2 (en) | 1988-06-06 | 1988-06-06 | HAKUMAKUKEISEIHOHOTOSONOSOCHI |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01306569A JPH01306569A (en) | 1989-12-11 |
| JPH0248626B2 true JPH0248626B2 (en) | 1990-10-25 |
Family
ID=15226546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13863088A Expired - Lifetime JPH0248626B2 (en) | 1988-06-06 | 1988-06-06 | HAKUMAKUKEISEIHOHOTOSONOSOCHI |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0248626B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003041372A (en) * | 2001-08-02 | 2003-02-13 | Konica Corp | Method and apparatus for plasma treatment in atmospheric pressure |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2929651B2 (en) * | 1990-03-14 | 1999-08-03 | 株式会社ブリヂストン | Method for producing rubber-based composite material |
| JP2897055B2 (en) * | 1990-03-14 | 1999-05-31 | 株式会社ブリヂストン | Method for producing rubber-based composite material |
| JP3206095B2 (en) * | 1991-04-12 | 2001-09-04 | 株式会社ブリヂストン | Surface treatment method and apparatus |
| US6429400B1 (en) | 1997-12-03 | 2002-08-06 | Matsushita Electric Works Ltd. | Plasma processing apparatus and method |
| JP4221847B2 (en) | 1999-10-25 | 2009-02-12 | パナソニック電工株式会社 | Plasma processing apparatus and plasma lighting method |
-
1988
- 1988-06-06 JP JP13863088A patent/JPH0248626B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003041372A (en) * | 2001-08-02 | 2003-02-13 | Konica Corp | Method and apparatus for plasma treatment in atmospheric pressure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01306569A (en) | 1989-12-11 |
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