JPH0251393B2 - - Google Patents

Info

Publication number
JPH0251393B2
JPH0251393B2 JP58232329A JP23232983A JPH0251393B2 JP H0251393 B2 JPH0251393 B2 JP H0251393B2 JP 58232329 A JP58232329 A JP 58232329A JP 23232983 A JP23232983 A JP 23232983A JP H0251393 B2 JPH0251393 B2 JP H0251393B2
Authority
JP
Japan
Prior art keywords
medium
substrate
dye
recording
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58232329A
Other languages
Japanese (ja)
Other versions
JPS59131494A (en
Inventor
Sotaro Edokoro
Masaki Ito
Masaru Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58232329A priority Critical patent/JPS59131494A/en
Publication of JPS59131494A publication Critical patent/JPS59131494A/en
Publication of JPH0251393B2 publication Critical patent/JPH0251393B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • G11B7/246Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only containing dyes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/244Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising organic materials only
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/252Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
    • G11B7/253Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates

Landscapes

  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Description

【発明の詳細な説明】 本発明はレーザ光によつて情報を記録再生する
ことのできる光学記録方式に関し、さらに詳しく
は半導体レーザの発振波長の光エネルギーにより
物質状態の変化を利用して記録を行う光学記録方
式に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical recording system that can record and reproduce information using laser light, and more specifically, the present invention relates to an optical recording system that can record and reproduce information using a laser beam, and more specifically, an optical recording system that uses a change in the state of matter to record information using light energy at the oscillation wavelength of a semiconductor laser. Regarding the optical recording method used.

従来、前記記録方式に用いる光学記録媒体とし
てはTe合金、Te酸化物、バブル形成媒体及び有
機色素等が用いられていた。
Conventionally, Te alloys, Te oxides, bubble-forming media, organic dyes, and the like have been used as optical recording media for the above-mentioned recording methods.

Te合金は、Teと半導体、例えばAs、Se等の
固溶合金として用いられている。この媒体は、比
較的書き込み感度が高く、又記録再生の光学系を
小型にし得る半導体レーザにも適合するが、化学
的に不安定であり、空気中放置で容易に劣化する
ことと、構成材料(Te、As、Se等)が毒性を示
すという問題点がある。
Te alloy is used as a solid solution alloy of Te and semiconductors such as As and Se. This medium has relatively high writing sensitivity and is compatible with semiconductor lasers, which can make the optical system for recording and reproduction compact, but it is chemically unstable and easily deteriorates when left in the air. There is a problem that (Te, As, Se, etc.) exhibit toxicity.

Te酸化物は、Te合金より安定であるが、その
光学特性、例えば吸収率、反射率が酸化状態に敏
感に依存する。そのため、この媒体は媒体形成時
に酸化状態を厳しく制御しなければならないとい
う欠点を有する。
Although Te oxide is more stable than Te alloy, its optical properties, such as absorption and reflectance, depend sensitively on the oxidation state. Therefore, this medium has the disadvantage that the oxidation state must be tightly controlled during the formation of the medium.

バブル形成媒体は、反射層、透過層、吸収層か
ら成る層構造であり、繰り返し反射干渉により光
の吸収率を高め高感度化を図つている。したがつ
て、この媒体は現在最も高感度な媒体の一つであ
るが、多層構造のため成膜回数が多いことと、繰
り返し反射干渉が各層の厚さに大きく依存するた
め、成膜時の膜厚制御を厳しく行なわなければな
らないという欠点がある。
The bubble-forming medium has a layered structure consisting of a reflective layer, a transmitting layer, and an absorbing layer, and uses repeated reflection interference to increase light absorption and achieve high sensitivity. Therefore, this medium is currently one of the most sensitive media, but due to its multilayer structure, the number of times the film is formed is large, and the repeated reflection interference greatly depends on the thickness of each layer. The drawback is that the film thickness must be strictly controlled.

一方、有機色素媒体は種々の形態で開発されて
いる。それらを大別すると色素単体型と色素を高
分子樹脂中に溶剤で溶解させた相溶型に分けられ
る。相溶型の媒体はたとえば特開昭55−161690号
に開示されているように、高分子樹脂であるポリ
ビニルアセテートに色素としてポリエステルイエ
ローを溶剤で相溶し、回転塗布法で基板上に形成
される。この媒体は、比較的短波長領域(400〜
500nm)に吸収を示すが、半導体レーザの波長
域(〜800nm)ではほとんど吸収が無く、半導
体レーザを使用する記録装置の媒体としては使用
することができない。又、一般に相溶型の媒体
は、媒体形成法が溶媒塗布に限られ、基板に樹脂
を使用する場合は、樹脂を溶解しない溶剤を選択
しなければならないという制約がある。一方、色
素単体型の媒体としては、たとえばスクアリリウ
ム色素を蒸着法で形成する媒体が特開昭56−
46221号に開示されている。この色素は半導体レ
ーザの発振波長である近赤外波長領域に比較的大
きな吸収があるが、記録感度はTe合金よりも悪
い。
On the other hand, organic dye media have been developed in various forms. They can be roughly divided into single dye types and compatible types in which the dye is dissolved in a polymer resin using a solvent. For example, as disclosed in JP-A-55-161690, a compatible medium is formed by dissolving polyester yellow as a pigment in a polymeric resin, polyvinyl acetate, using a solvent, and forming it on a substrate by a spin coating method. Ru. This medium has a relatively short wavelength range (400~
500 nm), but there is almost no absorption in the semiconductor laser wavelength range (~800 nm), so it cannot be used as a medium for recording devices that use semiconductor lasers. Furthermore, in general, the method for forming a compatible medium is limited to solvent coating, and when a resin is used for the substrate, there is a restriction that a solvent that does not dissolve the resin must be selected. On the other hand, as a single dye medium, for example, a medium in which squarylium dye is formed by vapor deposition method is published in Japanese Patent Application Laid-Open No.
Disclosed in No. 46221. This dye has relatively large absorption in the near-infrared wavelength region, which is the oscillation wavelength of semiconductor lasers, but its recording sensitivity is worse than Te alloy.

本発明の目的は、前述の従来技術の欠点を改良
し、半導体レーザの波長領域において高感度で化
学的に安定な光記録方式を提供することである。
An object of the present invention is to improve the above-mentioned drawbacks of the prior art and to provide a highly sensitive and chemically stable optical recording system in the wavelength region of semiconductor lasers.

すなわち本発明は、基板の片側に、 一般式 (式中RはOH、NH2、NHX又はNX2を表わし、
(R′)nはアルコキシル基を表わし、nは置換数
を表わす。(ここでXはアルキル基を表わす。))
で表わされるナフトキノン色素を主成分とする記
録層を設け、レーザ光線による情報の記録再生を
基板側から行なうことを特徴とする。
That is, in the present invention, on one side of the substrate, the general formula (In the formula, R represents OH, NH 2 , NHX or NX 2 ,
(R')n represents an alkoxyl group, and n represents the number of substitutions. (Here, X represents an alkyl group.)
It is characterized in that a recording layer containing a naphthoquinone dye represented by the following as a main component is provided, and information is recorded and reproduced from the substrate side using a laser beam.

上記の一般式で表わされるナフトキノン色素
は、2,3−ジシアノ−1,4−ナフトキノンと
総称され、5,8位の助色団の種類によつて吸収
ピーク波長が可視領域から近赤外領域に変化す
る。上記例示した助色団はどれも近赤外領域に吸
収ピーク波長があるが、上記一般式中のRとして
NH2を付加した化合物が半導体レーザの発振波
長と最も良く適合し、さらに(R′)nをアルコ
キシル基としたものが他の諸条件に対して最も好
ましいものである。
The naphthoquinone dyes represented by the above general formula are collectively called 2,3-dicyano-1,4-naphthoquinone, and the absorption peak wavelength varies from the visible region to the near-infrared region depending on the type of auxochrome at the 5 and 8 positions. Changes to All of the above-mentioned auxochromes have absorption peak wavelengths in the near-infrared region, but as R in the above general formula,
A compound to which NH 2 is added is most compatible with the oscillation wavelength of a semiconductor laser, and a compound in which (R')n is an alkoxyl group is most preferable considering other conditions.

たとえば で表わされる5−アミノ−2,3−ジシアノ−8
−〔(4−メトキシ)フエニルアミノ〕−1,4−
ナフトキノンをアセトン溶剤中で測定した場合、
この色素のスペクトルの吸収極大波長λmaxは
770nmであり、半導体レーザの発振波長と良く
適合することが判る。前記ナフトキノン色素化合
物は、比較的高温、高湿の環境条件でも安定であ
り、Te合金のような空気中酸化による劣化は示
さない。このことは、保護膜無しで長期間の使用
に耐ることを意味する。又この化合物は、一般の
有機色素と同様に低い熱伝導率を有しており、そ
の値は金属の1/10〜1/100である。したがつて、
レーザ光記録時の媒体中での熱の拡散が少なくな
り、光照射部の媒体温度を効率良く高めることが
できる。
for example 5-amino-2,3-dicyano-8 represented by
-[(4-methoxy)phenylamino]-1,4-
When naphthoquinone was measured in acetone solvent,
The absorption maximum wavelength λmax of the spectrum of this dye is
It can be seen that the wavelength is 770 nm, which matches well with the oscillation wavelength of a semiconductor laser. The naphthoquinone dye compound is stable even under relatively high temperature and high humidity environmental conditions, and does not show deterioration due to air oxidation unlike Te alloys. This means that it can withstand long-term use without a protective film. In addition, this compound has a low thermal conductivity similar to general organic dyes, and its value is 1/10 to 1/100 of that of metals. Therefore,
Diffusion of heat in the medium during laser beam recording is reduced, and the temperature of the medium at the light irradiation part can be efficiently raised.

記録媒体は、上記ナフトキノン色素を蒸着又は
溶剤塗布法により基板の片面に付着して形成され
る。前述のナフトキノン色素のうち、RがNH2
で(R′)nがアルコキシル基の場合は約200℃〜
240℃前後で蒸着が可能である。基板材料として
は種々のものが使用できるが、一般にはガラス、
合成樹脂が望ましい。合成樹脂としてはポリメチ
ルメタクリル(PMMA)、ポリサルホン、ポリカ
ーボネート等がある。基板形状は円形状、テープ
形状、シート形状が適用できる。
The recording medium is formed by depositing the above naphthoquinone dye on one side of a substrate by vapor deposition or solvent coating. Among the naphthoquinone dyes mentioned above, R is NH 2
When (R')n is an alkoxyl group, the temperature is about 200℃~
Vapor deposition is possible at around 240℃. Various substrate materials can be used, but generally glass,
Synthetic resin is preferable. Examples of synthetic resins include polymethyl methacrylate (PMMA), polysulfone, and polycarbonate. The substrate shape can be circular, tape, or sheet.

基板上に形成されたナフトキノン色素膜に半導
体レーザ光をレンズで収光して照射すると、照射
部の色素膜が除去されて孔が形成される。この孔
形成の機構は明確ではないが、蒸発(昇華)をと
もなう融解凝集に因ると考えられる。形成される
孔の大きさは、レーザ光の収光径、レーザパワ
ー、照射時間に依存するが、大体0.2〜3μmであ
ることが望ましい。このよな孔形成に必要なレー
ザエネルギーは小さなものであり、したがつて、
短時間で孔形成が可能である。具体的には、波長
830nmのAlGaAs半導体レーザ光をビーム径1.4μ
mに収光した場合、色素膜面上でのパワーは2〜
10mW、照射時間は50〜300n secの範囲で孔を形
成することができる。当然のことながら、上記パ
ワー、あるいは照射時間の上限値以上の条件でも
孔を形成することができるが、上記条件は望まし
い使用条件である。情報の記録は、2進情報を孔
の有無に対応させることによりなされる。通常円
板状媒体を等速回転させて、記録情報に合わせて
孔を形成して情報を記録する。なお、以上の場合
において色素膜の膜厚は0.01〜0.5μmで、好適に
は0.02〜0.2μmである。
When a naphthoquinone dye film formed on a substrate is irradiated with semiconductor laser light focused by a lens, the dye film in the irradiated area is removed and holes are formed. Although the mechanism of this pore formation is not clear, it is thought to be due to melting and aggregation accompanied by evaporation (sublimation). The size of the hole formed depends on the focused diameter of the laser beam, laser power, and irradiation time, but it is preferably about 0.2 to 3 μm. The laser energy required for such hole formation is small and therefore
Pore formation is possible in a short time. Specifically, the wavelength
830nm AlGaAs semiconductor laser beam with a beam diameter of 1.4μ
When the light is focused at m, the power on the pigment film surface is 2~
Holes can be formed with an irradiation time of 10 mW and an irradiation time of 50 to 300 nsec. Naturally, holes can be formed under conditions that exceed the upper limits of the above power or irradiation time, but the above conditions are desirable usage conditions. Information is recorded by associating binary information with the presence or absence of holes. Information is usually recorded by rotating a disk-shaped medium at a constant speed and forming holes in accordance with the recorded information. In the above case, the thickness of the pigment film is 0.01 to 0.5 μm, preferably 0.02 to 0.2 μm.

このように記録された情報(孔)の読み出し
は、媒体からの反射光又は透過光の光量変化を検
出することによりなされる。一般に反射光を検出
する方法が採用される。これは、反射光検出の方
が光学系が簡単になるためである。即ち、一つの
光学系で投光と集光が可能であるためである。読
み出しはレーザ光を連続させて照射する。その時
の光量は媒体に何らの形状変化が起らない弱いエ
ネルギーに設定され、通常記録時の光量の1/5〜
1/10である。
The information (holes) recorded in this manner is read out by detecting changes in the amount of light reflected or transmitted from the medium. Generally, a method of detecting reflected light is adopted. This is because the optical system for reflected light detection is simpler. That is, this is because one optical system can project and collect light. For reading, laser light is continuously irradiated. The light intensity at that time is set to a weak energy that does not cause any shape change to the medium, and is 1/5 to 1/5 of the light intensity during normal recording.
It is 1/10.

記録、再生時の光の入射方向として、媒体面側
と基板面側の2通りがある。基板面側入射では、
媒体面上に付着した塵埃に影響されることなく記
録、再生が可能であり、より望ましい形態であ
る。なお、媒体が形成されている面の反対側の基
板面上に付着した塵埃及びその面のキズ等の欠陥
は、基板厚さが1mm以上であれば、その面でのビ
ーム径が充分大きいので記録、再生に悪影響を与
えない。
There are two directions of incidence of light during recording and reproduction: toward the medium surface and toward the substrate surface. When incident on the substrate side,
This is a more desirable form because it allows recording and reproduction without being affected by dust attached to the surface of the medium. Note that if the substrate thickness is 1 mm or more, the beam diameter on that surface is sufficiently large to prevent dust adhering to the surface of the substrate opposite to the surface on which the medium is formed, as well as defects such as scratches on that surface. Does not adversely affect recording or playback.

情報は孔列として記録される。孔列は一般に同
心円状又はスパイラル状の多数のトラツクを形成
する。再生する場合、光ビームは特定トラツクの
孔列上を精度良く追跡する必要がある。これを実
現する一つの手段として回転機構の精度を空気軸
受などを使用して高めるという方法がある。しか
し、この場合は、回転系が複数となり、又高価と
なるので実用的ではない。より望ましいのは、基
板上に光の案内溝を設ける方法である。ビーム径
程度の溝に光が入射すると、光が回折される。ビ
ーム中心が溝からずれるにつれて回折光強度の空
間分布が異なり、これを検出して、ビームを溝の
中心に入射させるようにサーボ系を構成すること
ができる。通常溝の幅は、0.6〜1.2μm、その深
さは使用する記録再生波長の1/8〜1/4の範囲に設
定される。したがつて記録層は溝付基板面上に形
成される。
Information is recorded as a series of holes. The rows of holes generally form a number of concentric or spiral tracks. When reproducing, the light beam needs to accurately track the hole rows of a specific track. One way to achieve this is to increase the precision of the rotating mechanism by using air bearings or the like. However, in this case, there would be a plurality of rotating systems and the cost would be high, so it is not practical. More desirable is a method in which light guide grooves are provided on the substrate. When light enters a groove about the diameter of a beam, it is diffracted. The spatial distribution of the diffracted light intensity changes as the beam center shifts from the groove, and a servo system can be configured to detect this and direct the beam to the center of the groove. Usually, the width of the groove is set in the range of 0.6 to 1.2 μm, and the depth is set in the range of 1/8 to 1/4 of the recording/reproducing wavelength used. The recording layer is therefore formed on the grooved substrate surface.

2,3−ジシアノ−1,4ナフトキノン色素の
薄膜は通常の抵抗加熱蒸着法により容易に形成す
ることができる。室温に保持された基板上に薄膜
を形成すると、その結晶性は無定形、即ち非晶質
となる。非晶質膜からの反射光には、多結晶膜で
見られる粒界ノイズが含まれないので非晶質膜を
使用した時の再生のS/Nは良好である。
A thin film of 2,3-dicyano-1,4-naphthoquinone dye can be easily formed by a conventional resistance heating vapor deposition method. When a thin film is formed on a substrate kept at room temperature, its crystallinity becomes amorphous, that is, it becomes amorphous. Since the reflected light from the amorphous film does not include grain boundary noise seen in polycrystalline films, the reproduction S/N is good when using the amorphous film.

以下図面を参照して本発明の実施例を説明す
る。
Embodiments of the present invention will be described below with reference to the drawings.

第1図は実際に蒸着で基板上に作成した5−ア
ミノ−2,3−ジシアノ−8−〔(4−メトキシ)
フエニルアミノ〕−1,4−ナフトキノン色素の
薄膜の吸収スプクトルを示したものである。これ
より、AlGaAs半導体レーザの発振波長である〜
800nm付近に吸収極大があり、本色素が半導体
レーザを使用する光学記録媒体として好適である
ことが確認された。なお、本蒸着膜の複素屈折率
は波長830nmで2.4−i0.7である。
Figure 1 shows 5-amino-2,3-dicyano-8-[(4-methoxy)] actually created on a substrate by vapor deposition.
This figure shows the absorption spectrum of a thin film of phenylamino]-1,4-naphthoquinone dye. From this, the oscillation wavelength of the AlGaAs semiconductor laser is ~
It was confirmed that the dye has an absorption maximum near 800 nm and is suitable as an optical recording medium using a semiconductor laser. The complex refractive index of the deposited film is 2.4-i0.7 at a wavelength of 830 nm.

次に1.2mm厚の円板上のPMMA基板上に、5−
アミノ−2,3−ジシアノ−8−〔(4−メトキ
シ)フエニルアミノ〕−1,4−ナフトキノン色
素を抵抗加熱法で蒸着し、膜厚935Åの膜を得た。
抵抗加熱ポート材はMoであり、蒸着時の真空度
は1.5×10-5Torr以下とした。基板は室温自然放
置とし、蒸着による基板温度上昇はほとんど認め
られなかつた。ポート温度を徐々に上げて行くと
233℃で色素が融解し、この温度に固定して蒸着
した蒸着速度は5Å/secである。
Next, 5-
Amino-2,3-dicyano-8-[(4-methoxy)phenylamino]-1,4-naphthoquinone dye was deposited by resistance heating to obtain a film with a thickness of 935 Å.
The resistance heating port material was Mo, and the degree of vacuum during vapor deposition was 1.5×10 -5 Torr or less. The substrate was left to stand at room temperature, and almost no rise in substrate temperature due to vapor deposition was observed. Gradually increasing the port temperature
The dye melts at 233°C, and the deposition rate when deposited at this temperature is 5 Å/sec.

なお、本色素の分解温度は295℃であり、蒸着
温度より十分高い。
The decomposition temperature of this dye is 295°C, which is sufficiently higher than the vapor deposition temperature.

第2図は、このようにして形成された媒体1を
示している。PMMA基板10上に色素膜20が
形成されている。この媒体1に基板10を介して
矢印50の方向から波長830nmの半導体レーザ
光を光学系(図示せず)で集光して照射した。こ
の場合、レーザ光は媒体面上のパワーで2〜10m
W、照射時間50〜300n sec、媒射時間50〜300n
sec、媒体移動線速度1.3m/secの条件で行なつ
た。この記録波長での記録感度は約40mJ/cm2
あつた。この記録により、色素膜20中に約1μ
m前後の径の孔40が形成された。
FIG. 2 shows the medium 1 thus formed. A dye film 20 is formed on a PMMA substrate 10. This medium 1 was irradiated with a semiconductor laser beam having a wavelength of 830 nm through the substrate 10 from the direction of the arrow 50, condensed by an optical system (not shown). In this case, the laser beam has a power of 2 to 10 m on the medium surface.
W, irradiation time 50-300n sec, radiation time 50-300n
sec, and the medium moving linear velocity was 1.3 m/sec. The recording sensitivity at this recording wavelength was about 40 mJ/cm 2 . According to this recording, about 1μ in the pigment film 20.
A hole 40 having a diameter of approximately 1.0 m was formed.

上記実施例から明らかなように、本発明により
得られる光学記録方式は、高感度でありかつ化学
的に安定で長期保存に耐えるという優れた利点を
有していることが判る。なお、本実施例ではアル
コキシル基(R′)nとしてメトキシル基CH3Oを
用いる例を示したがこの他にエトキシル基
C2H5O−、プロポキシル基C3H7O−等の炭素の
多いものでもほぼ実施例と等しい有効性が得られ
る。
As is clear from the above examples, it can be seen that the optical recording method obtained by the present invention has the excellent advantages of being highly sensitive, chemically stable, and durable for long-term storage. In addition, in this example, an example was shown in which methoxyl group CH 3 O was used as the alkoxyl group (R')n, but in addition to this, ethoxyl group
Even with carbon-rich compounds such as C 2 H 5 O- and propoxyl group C 3 H 7 O-, almost the same effectiveness as in the example can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は5−アミノ−2,3−ジシアノ−8−
〔(4−メトキシ)フエニルアミノ〕−1,4−ナ
フトキノン色素蒸着膜の吸収スペクトルを表わす
グラフ、第2図は、本発明における一実施例の光
学記録媒体の断面図であり図中10は基板、20
は色素膜、50は光の入射方向、40は孔を示
す。
Figure 1 shows 5-amino-2,3-dicyano-8-
FIG. 2 is a graph showing the absorption spectrum of the [(4-methoxy)phenylamino]-1,4-naphthoquinone dye deposited film, and is a cross-sectional view of an optical recording medium according to an embodiment of the present invention, in which 10 is a substrate; 20
50 indicates a dye film, 50 indicates a light incident direction, and 40 indicates a hole.

Claims (1)

【特許請求の範囲】 1 基板の片側に、 一般式 (式中RはOH、NH2、NHX又はNX2を表わし、
(R′)nはアルコキシル基を表わし、nは置換数
を表わす(ここでXはアルキル基を表わす。)) で表わされるナフトキノン色素を主成分とする記
録層を設け、レーザ光線による情報の記録・再生
を基板側から行なうことを特徴とする光記録方
式。
[Claims] 1. On one side of the substrate, a general formula (In the formula, R represents OH, NH 2 , NHX or NX 2 ,
(R')n represents an alkoxyl group, n represents the number of substitutions (here, X represents an alkyl group)) A recording layer containing a naphthoquinone dye as a main component is provided, and information is recorded using a laser beam. -An optical recording method characterized by reproduction from the substrate side.
JP58232329A 1983-12-09 1983-12-09 Optical recording system Granted JPS59131494A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58232329A JPS59131494A (en) 1983-12-09 1983-12-09 Optical recording system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58232329A JPS59131494A (en) 1983-12-09 1983-12-09 Optical recording system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57157475A Division JPS5948187A (en) 1982-06-25 1982-09-10 Photo recording medium

Publications (2)

Publication Number Publication Date
JPS59131494A JPS59131494A (en) 1984-07-28
JPH0251393B2 true JPH0251393B2 (en) 1990-11-07

Family

ID=16937485

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58232329A Granted JPS59131494A (en) 1983-12-09 1983-12-09 Optical recording system

Country Status (1)

Country Link
JP (1) JPS59131494A (en)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5948187A (en) * 1982-09-10 1984-03-19 Nec Corp Photo recording medium

Also Published As

Publication number Publication date
JPS59131494A (en) 1984-07-28

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