JPH0251494A - Material for magneto-optical element - Google Patents
Material for magneto-optical elementInfo
- Publication number
- JPH0251494A JPH0251494A JP19979888A JP19979888A JPH0251494A JP H0251494 A JPH0251494 A JP H0251494A JP 19979888 A JP19979888 A JP 19979888A JP 19979888 A JP19979888 A JP 19979888A JP H0251494 A JPH0251494 A JP H0251494A
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- Prior art keywords
- substrate
- magneto
- lattice constant
- optical
- formula
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、アアラデー効果を利用した光アイソレータ、
光サーキュレータ等に用いられる磁気光学材料に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention provides an optical isolator using the Alladay effect;
This invention relates to magneto-optical materials used in optical circulators and the like.
(従来の技術)
半導体レーザを光源に用いる光通信や光計測において、
光源に反射光が戻るのを防ぐために光アイソレータが必
要であり、光アイソレータにはファラデー効果を有する
磁性ガーネットが用いられている。ファラデー回転子材
料に要求されるものには、■)ファラデー回転係数が大
きい、2)ファラデー回転角の温度変化が小さい、3)
使用波長領域において吸収がない、4)飽和に要する磁
界が小さいなどがあり、これらを総合的に満たす材料が
望まれる。(Conventional technology) In optical communication and optical measurement using semiconductor lasers as light sources,
An optical isolator is required to prevent reflected light from returning to the light source, and a magnetic garnet having a Faraday effect is used for the optical isolator. The requirements for Faraday rotator materials include ■) large Faraday rotation coefficient, 2) small temperature change in Faraday rotation angle, and 3)
There is no absorption in the wavelength range used, and 4) the magnetic field required for saturation is small, and a material that comprehensively satisfies these requirements is desired.
従来、ファラデー回転子には、イツトリウム・鉄・ガー
ネットYJe5O12 (Y I G)が用いられてき
た。しかし、YIGはファラデー回転係数が小さいため
45度のファラデー回転角を得るのに必要な厚さが2〜
3鶴と厚くなってしまう。近年、YIGに代わる材料と
してBi置換希土類鉄ガーネットが提案、されている。Conventionally, yttrium-iron-garnet YJe5O12 (Y I G) has been used for Faraday rotators. However, since YIG has a small Faraday rotation coefficient, the thickness required to obtain a Faraday rotation angle of 45 degrees is 2~
It will be as thick as 3 cranes. In recent years, Bi-substituted rare earth iron garnet has been proposed as a material to replace YIG.
これは、磁性ガーネットの希土類元素をBiで置換する
と、Bi置換量に比例してファラデー回転係数が著しく
増加するものである。さらに、希土類元素を選択するこ
とにより、ファラデー回転角の温度変化が小さく、飽和
に要する磁界の小さい材料YbxTbyBi*−x−y
Fe5O12が提案されている(特願昭61−1318
96)。This is because when the rare earth element of magnetic garnet is replaced with Bi, the Faraday rotation coefficient increases significantly in proportion to the amount of Bi replacement. Furthermore, by selecting a rare earth element, the material YbxTbyBi*-x-y has a small temperature change in the Faraday rotation angle and a small magnetic field required for saturation.
Fe5O12 has been proposed (Patent application 1318/1986)
96).
(発明が解決しようとする課題)
一般に、波長0.4〜1.0μmにおける磁性ガーネッ
トの吸収は主に、酸素四面体位置の24dサイトと酸素
八面体位置の162サイトとを占めるFe”イオンの結
晶場遷移によるものである。この他に、フラックスやる
つぼ材から混入したpb”pb”、 pt’°イオンの
電価補償によって生じるFe2゜p e4 +のブロー
ドな吸収が存在丈るため、上記吸収のすそのが波長1.
3μm、1.55μmにかかり、これらの波長における
挿入損失が大きくなっていた。(Problem to be Solved by the Invention) Generally, the absorption of magnetic garnet at a wavelength of 0.4 to 1.0 μm is mainly caused by Fe'' ions occupying the 24d site of the oxygen tetrahedron and the 162 site of the oxygen octahedron. This is due to crystal field transition.In addition, there is a broad absorption of Fe2゜p e4 + caused by charge compensation of pb "pb" and pt'° ions mixed in from the flux and crucible material. The tail of absorption is wavelength 1.
3 μm and 1.55 μm, and the insertion loss at these wavelengths was large.
前記(YbTbBi) Je5O12において、このブ
ロードな吸収が顕著に現れ、波長1.3μm、1.55
μmにおける挿入損失がそれぞれ0.6 dB、 0.
4dBと太き(なっている。そのため、この材料では低
損失(1dB以下)の光アイソレータを作製することが
困難であった。In the above (YbTbBi) Je5O12, this broad absorption appears prominently, and the wavelength is 1.3 μm and 1.55 μm.
Insertion loss in μm is 0.6 dB and 0.
It is as thick as 4 dB. Therefore, it has been difficult to fabricate an optical isolator with low loss (1 dB or less) using this material.
本発明の目的は、(YbTbBi) 3FesO+ z
の希土類の組成比を変えることによって吸収を減らし、
光アイソレータや光サーキュレータの使用波長領域であ
る0、8〜1.6μmにおける挿入損失を低減した高性
能なファラデー回転子材料を提供するにある。The object of the present invention is to obtain (YbTbBi) 3FesO+ z
By changing the composition ratio of rare earth elements in
The object of the present invention is to provide a high-performance Faraday rotator material with reduced insertion loss in the wavelength range of 0.8 to 1.6 μm, which is the wavelength range used in optical isolators and optical circulators.
(課題を解決するための手段)
(YbTbB i) :+Fe50 + zにおいて、
TbイオンはTb”の他にTb”でも安定に存在しうろ
ことから、Tb”イオンによって誘起されるFe”イオ
ンのブロードな吸収がさらに加わるため、挿入損失が大
きくなっていることを実験的に見いだし、本発明をなす
に至った。上記問題点を解決するために、本発明の磁気
光学素子は、(YbTbBi) 3FesO+ zのT
bの量を減らして材料自身の吸収係数を減少させること
と、Biを多量に置換しファラデー回転係数を増加させ
て所望の角度を得るのに必要な厚さを減少させることに
より、挿入損失の低減を図ることに特徴がある。すなわ
ち、本発明の磁気光学素子用材料は、前記高格子定数G
GG基板上に式:YbつTbyBiz□=。(Means for solving the problem) (YbTbB i): +Fe50 + z,
Since Tb ions may exist stably in Tb'' as well as Tb'', it has been experimentally shown that the insertion loss is increased due to the additional broad absorption of Fe'' ions induced by Tb'' ions. This discovery led to the present invention. In order to solve the above problems, the magneto-optical element of the present invention has a T of (YbTbBi) 3FesO+ z
The insertion loss can be reduced by reducing the amount of b to reduce the absorption coefficient of the material itself, and by replacing a large amount of Bi to increase the Faraday rotation coefficient and reduce the thickness required to obtain the desired angle. It is characterized by its reduction. That is, the magneto-optical element material of the present invention has the high lattice constant G
On the GG substrate, the formula: YbTbyBiz□=.
Fe5(L2で表される旧置換希土類鉄ガーネットをエ
ピタキシャル成長させたものであり、上記式においてX
とyは、x+y≦2.2.x>yおよびy−一2.3x
+21K(21,62−a )(ただし、aは上記基板
の格子定数である。)なる条件をいずれも満足するよう
に選定されている。It is an epitaxially grown former substituted rare earth iron garnet represented by Fe5 (L2), and in the above formula,
and y are x+y≦2.2. x>y and y-2.3x
+21K (21,62-a) (where a is the lattice constant of the substrate).
YbxTb、Bit−x−yFe5O12において、X
とyはファラデー回転係数と吸収係数の目標値および基
板材料との格子定数マツチングにより決まる値である。In YbxTb, Bit-x-yFe5O12,
and y are values determined by target values of the Faraday rotation coefficient and absorption coefficient and lattice constant matching with the substrate material.
まず、上記組成系において、ファラデー回転係数は旧置
換量に比例しファラデー回転係数の目標値を−1000
deg/ c+n以上(波長1.314m)とするには
、1分子当りのB+の含有率を0.8/f、u、以上と
する必要がある。この実験結果に基づき、3−x−y≧
0.8であること、すなわちx+y≦2.2が導かれる
。次に、吸収係数はTbO量に比例し、吸収による損失
を小さくするためには、Yb/Tbのモル比を1より大
きくする必要がある。すなわち、Xとyはx>yなる関
係を満たす必要がある。さらに、基板と上記組成の膜と
は格子定数がマツチングしている必要がある。このマツ
チング条件は、Yb3Fe5012. TbJe、0+
z、 BiJesO+2の格子定数とXとyおよび基板
の格子定数から理論的に求められる。すなわち、Yb3
Fe50tz、 TbJe5O12の格子定数は12.
291人、 12.477人であり、B13Fe50+
zの理論的格子定数は12.620人であるので、基板
の格子定数を3人とすれば格子定数のマツチングを表す
式は、
12.291 x +12.477y +12.620
(3−x −y)−3aとなる。この式から、y =
−2,3x + 21x(12,62−a)が導かれる
。aは12゜47〜12.53人の範囲である。したが
って、基板の格子定数が決まればXとyは一義的に決ま
る。First, in the above composition system, the Faraday rotation coefficient is proportional to the old substitution amount, and the target value of the Faraday rotation coefficient is -1000.
deg/c+n or more (wavelength 1.314 m), the B+ content per molecule needs to be 0.8/f,u or more. Based on this experimental result, 3-x-y≧
0.8, that is, x+y≦2.2. Next, the absorption coefficient is proportional to the amount of TbO, and in order to reduce loss due to absorption, it is necessary to make the molar ratio of Yb/Tb larger than 1. That is, X and y need to satisfy the relationship x>y. Furthermore, the lattice constants of the substrate and the film having the above composition must be matched. This matching condition is Yb3Fe5012. TbJe, 0+
z, is theoretically determined from the lattice constant of BiJesO+2, X, y, and the lattice constant of the substrate. That is, Yb3
The lattice constant of Fe50tz and TbJe5O12 is 12.
291 people, 12.477 people, B13Fe50+
The theoretical lattice constant of z is 12.620 people, so if the lattice constant of the substrate is 3 people, the formula for matching the lattice constant is: 12.291 x + 12.477y + 12.620
(3-x-y)-3a. From this formula, y =
-2,3x + 21x (12,62-a) is derived. a ranges from 12°47 to 12.53 people. Therefore, once the lattice constant of the substrate is determined, X and y are uniquely determined.
上記のように、ybとTbの量すなわちXとyは、)<
+y≦2.2.x>yおよびy=−2,3x+21y(
12,62−a )の三式を満たす必要がある。As mentioned above, the amounts of yb and Tb, that is, X and y are )<
+y≦2.2. x>y and y=-2,3x+21y(
12, 62-a) must be satisfied.
(実施例)
基板として格子窓912.498人の(GdCa) 3
(GaHgZr) s0+2を用い、液相エピタキシ
ャル法によ/)Yb+、。(Example) Grid window 912.498 people (GdCa) 3 as substrate
(GaHgZr) Yb+, by liquid phase epitaxial method using s0+2.
7bo、 7Bi1.3FesO+ zなる化学式を有
する磁性ガーネット単結晶膜を育成した。この液相エピ
タキシャル方法は、融液粗成YbzOz 2.84 g
、Tbz032.70g、 FezOz 46.06
g、 Pb0174.10g、 BizO:+ 363
.45g、 820310.86gとし、これらを白金
るつぼ中で920℃で融解したのち、810℃に温度を
下げて過冷却状態とし、この融液に上記基板を1100
rpで回転しながら接触させて行った。成長速度は0.
35μm/分で、膜厚320μmに成長させた。このガ
ーネット膜のファラデー回転係数と挿入損失を、波長1
.3μm、1.55μmにおいて室温で測定したところ
第1表に示すような結果が得られた。この組成の磁性ガ
ーネット膜において、挿入損失は、波長1.3μm、1
.55μmにおいてそれぞれ0.3dB、 0.2d
Bと従来の半分となり、大きく改善された。A magnetic garnet single crystal film having the chemical formula 7bo, 7Bi1.3FesO+z was grown. This liquid phase epitaxial method uses 2.84 g of melt-produced YbzOz
, Tbz032.70g, FezOz 46.06
g, Pb0174.10g, BizO: + 363
.. 45g and 820310.86g, these were melted at 920°C in a platinum crucible, the temperature was lowered to 810°C to create a supercooled state, and the above substrate was added to this melt at 1100°C.
The contact was made while rotating with rp. Growth rate is 0.
The film was grown to a thickness of 320 μm at a rate of 35 μm/min. The Faraday rotation coefficient and insertion loss of this garnet film are expressed as wavelength 1
.. When measurements were made at room temperature at 3 μm and 1.55 μm, the results shown in Table 1 were obtained. In the magnetic garnet film with this composition, the insertion loss is 1.3 μm at a wavelength of 1.3 μm.
.. 0.3dB and 0.2d at 55μm, respectively
B, which is half of the previous value, which is a big improvement.
(発明の効果)
本発明により、波長1.3μm、1.55μmにおいて
挿入損失がそれぞれ0.3dB、 0.2dBと従来
の半分になり特性が大きく向上した。このような材料を
用いることにより、高性能な光アイソレータや光サーキ
ュレータを作製することができる。(Effects of the Invention) According to the present invention, the insertion loss at wavelengths of 1.3 μm and 1.55 μm is 0.3 dB and 0.2 dB, respectively, which are half of the conventional values, and the characteristics are greatly improved. By using such materials, high-performance optical isolators and optical circulators can be manufactured.
Claims (1)
1_2で表される組成を有するガーネット単結晶基板と
、該基板上にエピタキシャル成長させた、 式:Yb_xTb_yBi_3_−_x_−_yFe_
5O_1_2で表されかつxとyは、x+y≦2.2、
x>yおよび y=−2.3x+21×(12.62−a)(aは上記
基板の格子定数で、12.47〜12.53Åの範囲の
値)なる条件を満足する磁性ガーネット単結晶膜とから
なる磁気光学素子用材料。(1) Formula: (GdCa)_3(GaMgZr)_5O_
A garnet single crystal substrate having a composition represented by 1_2, and a garnet single crystal substrate epitaxially grown on the substrate, with the formula:
5O_1_2, and x and y are x+y≦2.2,
A magnetic garnet single crystal film that satisfies the following conditions: x>y and y=-2.3x+21×(12.62-a) (a is the lattice constant of the above substrate, a value in the range of 12.47 to 12.53 Å) A material for magneto-optical elements consisting of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19979888A JPH0251494A (en) | 1988-08-12 | 1988-08-12 | Material for magneto-optical element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19979888A JPH0251494A (en) | 1988-08-12 | 1988-08-12 | Material for magneto-optical element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0251494A true JPH0251494A (en) | 1990-02-21 |
| JPH0476351B2 JPH0476351B2 (en) | 1992-12-03 |
Family
ID=16413799
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19979888A Granted JPH0251494A (en) | 1988-08-12 | 1988-08-12 | Material for magneto-optical element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0251494A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230248A (en) * | 1985-08-01 | 1987-02-09 | Fuji Photo Film Co Ltd | Image forming method |
| US5434101A (en) * | 1992-03-02 | 1995-07-18 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| JP2006117492A (en) * | 2004-10-25 | 2006-05-11 | Namiki Precision Jewel Co Ltd | Bismuth-substituted terbium-iron-garnet single crystal |
-
1988
- 1988-08-12 JP JP19979888A patent/JPH0251494A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230248A (en) * | 1985-08-01 | 1987-02-09 | Fuji Photo Film Co Ltd | Image forming method |
| US5434101A (en) * | 1992-03-02 | 1995-07-18 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| US5662740A (en) * | 1992-03-02 | 1997-09-02 | Tdk Corporation | Process for producing thin film by epitaxial growth |
| JP2006117492A (en) * | 2004-10-25 | 2006-05-11 | Namiki Precision Jewel Co Ltd | Bismuth-substituted terbium-iron-garnet single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0476351B2 (en) | 1992-12-03 |
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