JPH0252431U - - Google Patents
Info
- Publication number
- JPH0252431U JPH0252431U JP13242088U JP13242088U JPH0252431U JP H0252431 U JPH0252431 U JP H0252431U JP 13242088 U JP13242088 U JP 13242088U JP 13242088 U JP13242088 U JP 13242088U JP H0252431 U JPH0252431 U JP H0252431U
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- temperature
- vacuum container
- outside
- temperature signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
第１図は本考案の１実施例の構成を示す構成図
、第２図は第１図に示す実施例の温度制御の様子
を説明する特性図、第３図は従来のスパツタリン
グ装置の構成を示す構成図、第４図は第３図に示
すスパツタリング装置の温度制御の様子を説明す
る特性図である。
１０……真空容器、１１……ホルダ、１２……
基板、１３……排気口、１５……陰極、１６……
物質、１７……ヒータ、１８……熱電対、２０…
…温度制御器、２１……ヒータ操作端、２２……
真空容器、２３……透明窓、２４……ハロゲンラ
ンプ、２５……放射温度計、２６……電流制御器
。
Figure 1 is a block diagram showing the configuration of one embodiment of the present invention, Figure 2 is a characteristic diagram explaining the temperature control of the embodiment shown in Figure 1, and Figure 3 is a diagram showing the configuration of a conventional sputtering device. The configuration diagram shown in FIG. 4 is a characteristic diagram illustrating the state of temperature control of the sputtering apparatus shown in FIG. 3. 10... Vacuum container, 11... Holder, 12...
Substrate, 13... Exhaust port, 15... Cathode, 16...
Substance, 17... Heater, 18... Thermocouple, 20...
...Temperature controller, 21...Heater operating end, 22...
Vacuum container, 23...transparent window, 24...halogen lamp, 25...radiation thermometer, 26...current controller.
Claims (1)
所定の物質を用いて電圧の印加により放電を起こ
してこの基板をスパツタリングするスパツタリン
グ装置において、前記真空容器の外部から前記基
板を加熱する加熱光源と、前記基板の温度を前記
真空容器の外部から測定し前記基板の温度に対応
する温度信号を出力する放射温度計と、この温度
信号が入力され外部から設定された設定温度に前
記温度信号が一致するように前記加熱光源を制御
する制御手段とを具備することを特徴とするスパ
ツタリング装置。 A sputtering apparatus in which a substrate to be sputtered is provided in a vacuum container and sputters the substrate by applying a voltage using a predetermined material to cause discharge, a heating light source that heats the substrate from outside the vacuum container; a radiation thermometer that measures the temperature of the substrate from outside the vacuum container and outputs a temperature signal corresponding to the temperature of the substrate; and a radiation thermometer that receives this temperature signal so that the temperature signal matches a set temperature set from the outside. A sputtering apparatus comprising: a control means for controlling the heating light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13242088U JPH0252431U (en) | 1988-10-11 | 1988-10-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13242088U JPH0252431U (en) | 1988-10-11 | 1988-10-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0252431U true JPH0252431U (en) | 1990-04-16 |
Family
ID=31389364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13242088U Pending JPH0252431U (en) | 1988-10-11 | 1988-10-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0252431U (en) |
-
1988
- 1988-10-11 JP JP13242088U patent/JPH0252431U/ja active Pending
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