JPH0252458U - - Google Patents

Info

Publication number
JPH0252458U
JPH0252458U JP13189188U JP13189188U JPH0252458U JP H0252458 U JPH0252458 U JP H0252458U JP 13189188 U JP13189188 U JP 13189188U JP 13189188 U JP13189188 U JP 13189188U JP H0252458 U JPH0252458 U JP H0252458U
Authority
JP
Japan
Prior art keywords
source
power mos
mos fet
drain
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13189188U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13189188U priority Critical patent/JPH0252458U/ja
Publication of JPH0252458U publication Critical patent/JPH0252458U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す回路図、第2
図は従来のパワーMOS FETの一例を示す回
路図である。 1……パワーMOS FET本体、2A〜2F
……ツエナーダイオード、D……ドレイン端子、
G……ゲート端子、S……ソース端子。
Figure 1 is a circuit diagram showing one embodiment of the present invention, Figure 2 is a circuit diagram showing an embodiment of the present invention.
The figure is a circuit diagram showing an example of a conventional power MOS FET. 1...Power MOS FET body, 2A to 2F
... Zener diode, D... drain terminal,
G...Gate terminal, S...Source terminal.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] パツケージ内部に、パワーMOS FET本体
と、このパワーMOS FET本体のゲート・ソ
ース間に互いに逆極性で直列に接続されたゲート
・ソース間保護用の第1及び第2のツエナーダイ
オードと、前記パワーMOS FET本体のドレ
イン・ソース間に接続されたドレイン・ソース間
保護用の第3のツエナーダイオードとを設けたこ
とを特徴とするパワーMOS FET。
Inside the package, a power MOS FET body, first and second Zener diodes for protection between the gate and source connected in series with mutually opposite polarities between the gate and source of the power MOS FET body, and the power MOS FET body. A power MOS FET characterized in that a third Zener diode for protection between the drain and source is connected between the drain and source of the FET main body.
JP13189188U 1988-10-07 1988-10-07 Pending JPH0252458U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13189188U JPH0252458U (en) 1988-10-07 1988-10-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13189188U JPH0252458U (en) 1988-10-07 1988-10-07

Publications (1)

Publication Number Publication Date
JPH0252458U true JPH0252458U (en) 1990-04-16

Family

ID=31388365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13189188U Pending JPH0252458U (en) 1988-10-07 1988-10-07

Country Status (1)

Country Link
JP (1) JPH0252458U (en)

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