JPH0267745A - Wafer holding apparatus - Google Patents

Wafer holding apparatus

Info

Publication number
JPH0267745A
JPH0267745A JP63218521A JP21852188A JPH0267745A JP H0267745 A JPH0267745 A JP H0267745A JP 63218521 A JP63218521 A JP 63218521A JP 21852188 A JP21852188 A JP 21852188A JP H0267745 A JPH0267745 A JP H0267745A
Authority
JP
Japan
Prior art keywords
wafer
insulating layer
vacuum
vacuum suction
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63218521A
Other languages
Japanese (ja)
Other versions
JP2748127B2 (en
Inventor
Eiji Sakamoto
英治 坂本
Shinichi Hara
真一 原
Isamu Shimoda
下田　勇
Shunichi Uzawa
鵜澤　俊一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP63218521A priority Critical patent/JP2748127B2/en
Priority to DE68927364T priority patent/DE68927364T2/en
Priority to US07/401,654 priority patent/US4969168A/en
Priority to EP89308822A priority patent/EP0357424B1/en
Publication of JPH0267745A publication Critical patent/JPH0267745A/en
Application granted granted Critical
Publication of JP2748127B2 publication Critical patent/JP2748127B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To decrease resistance to convected heat of a wafer for preventing thermal deformation thereof by providing, for the purpose of securing the wafer, means for holding the wafer by electrostatic attraction as well as means for holding the wafer by suction. CONSTITUTION:An apparatus body 2 consists of ceramics such as Al2O3 or SiC, or a metal such as SUS or Al. An insulating layer 3 consists of a material having high dielectric constant such as Al2O3 or the like. A wafer 1 is mounted on the insulating layer 3 whereby a contact face is defined between the wafer and the insulating layer. The contact face is provided with suction grooves 4 which are connected to a vacuum source through a vacuum pipe 14 and a vacuum sunction port 5. An electrode 8 is provided under the insulating layer 3. When a high voltage is applied to the electrode 8, electrostatic attracting force is generated between the electrode 8 and the wafer 1, whereby the wafer 1 is attracted to the insulating layer 3 while it is also held by suction. In this manner, the wafer can be held securely.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半導体製造装置に関し、特にマスクパターン
をクエへに露光転写する際、ウェハを保持するためのウ
ェハ保持装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to semiconductor manufacturing equipment, and particularly to a wafer holding device for holding a wafer when exposing and transferring a mask pattern onto a square.

［従来の技術］ 従来のウェハ保持装置として、真空吸引力を利用した真
空吸着手段からなるもの及び静電力を利用した静電吸着
手段からなるものが公知である。[Prior Art] As conventional wafer holding devices, there are known devices that include vacuum suction means that utilizes vacuum suction force and devices that consist of electrostatic suction means that utilizes electrostatic force.

従来の真空吸着手段からなるウェハ保持装置を第２（ａ
）図及び第２（ｂ）図に示す、（ａ）図は上面図、（ｂ
）図は断面図である。本体２の上面に真空吸着溝４が形
成され、真空配管１４及び真空吸着口１５を介して図示
しない真空源に接続されている。A wafer holding device consisting of a conventional vacuum suction means is installed in the second (a)
) and FIG. 2(b), where (a) is a top view and (b) is a top view.
) The figure is a cross-sectional view. A vacuum suction groove 4 is formed on the upper surface of the main body 2, and is connected to a vacuum source (not shown) via a vacuum pipe 14 and a vacuum suction port 15.

ウェハ１は本体２の上面の接触面上に搭載され真空吸着
溝４を介して真空吸引され雰囲気圧力により吸着される
。The wafer 1 is mounted on the contact surface of the upper surface of the main body 2, is vacuum-suctioned through the vacuum suction groove 4, and is suctioned by atmospheric pressure.

従来の静電吸着手段からなるウェハ保持装置を第３（ａ
）図及び第３（ｂ）図に示す。（ａ）図は上面図、（ｂ
）図は断面図である。本体２の上面に電極８が配設され
その上面は絶縁層３で覆われる。ウェハ１は本体２の絶
縁層３の上面（接触面）上に搭載され電極８に電圧を印
加することにより静電力により接触面上に吸着される。A wafer holding device consisting of a conventional electrostatic adsorption means is used as the third (a)
) and FIG. 3(b). (a) The figure is a top view, (b)
) The figure is a cross-sectional view. An electrode 8 is disposed on the upper surface of the main body 2, and the upper surface is covered with an insulating layer 3. The wafer 1 is mounted on the upper surface (contact surface) of the insulating layer 3 of the main body 2, and is attracted onto the contact surface by electrostatic force by applying a voltage to the electrode 8.

［発明が解決しようとする課題］ しかしながら、前記従来の真空吸着手段からなるウェハ
保持装置においては、ウェハと接触面との間に真空層が
できるため接触熱抵抗が著しく大きくなる。例えば、常
温常圧の空気；囲気中で真空吸着と静電吸着とを比較し
た場合、ウェハとウェハ梧載面との間の接触熱抵抗は、
真空吸着の場合１０−２［バ・ｍ２／Ｗ］　、静電吸着
の場合１０−’　［にｍ２／Ｗ］　となり、真空吸着の
方が２桁程接触熱抵抗が大きくなる。従って、マスクパ
ターンをウェハに露光転写する際、露光エネルギーの吸
収によりマスク及びウェハに発生した熱が保持装置側に
逃げることが出来ず、マスク及びウェハの温度上昇が起
こりマスクパターンの熱歪を生ずるという欠点があった
。[Problems to be Solved by the Invention] However, in the wafer holding device made of the conventional vacuum suction means, a vacuum layer is formed between the wafer and the contact surface, resulting in a significantly large contact thermal resistance. For example, when comparing vacuum adsorption and electrostatic adsorption in air at room temperature and normal pressure, the contact thermal resistance between the wafer and the wafer mounting surface is:
In the case of vacuum adsorption, the contact thermal resistance is 10-2 [m2/W], and in the case of electrostatic adsorption, it is 10-' [m2/W], and the contact thermal resistance is about two orders of magnitude larger in the case of vacuum adsorption. Therefore, when a mask pattern is exposed and transferred onto a wafer, the heat generated in the mask and wafer due to absorption of exposure energy cannot escape to the holding device, causing a rise in the temperature of the mask and wafer and causing thermal distortion of the mask pattern. There was a drawback.

また、前記静電吸着手段からなるウェハ保持装置におい
ては、ウェハを吸着接触面上に搭載した後電極に電圧を
印加した際、ウェハと吸着面との間のギャップが小さい
部分では吸着力が大きく、ギャップが大きい部分では吸
着力が小さいため、クエへの凹凸（うねり）によりクエ
へ面内で吸着力の差が生じ、クエへの凹凸を吸着面に倣
って矯正出来ない場合があり、ウェハが脱落する場合が
あった。In addition, in the wafer holding device consisting of the electrostatic attraction means, when a voltage is applied to the electrode after the wafer is mounted on the attraction contact surface, the attraction force is large in areas where the gap between the wafer and the attraction surface is small. , since the adsorption force is small in areas with large gaps, unevenness (undulations) on the wafer causes a difference in adsorption force within the surface of the wafer, and it may not be possible to correct the unevenness of the wafer by following the suction surface. Sometimes it fell off.

本発明は上記従来技術の欠点に鑑みなされたものであっ
て、ウェハの接触熱抵抗を低下させて熱歪の発生を防止
し、ウェハを確実ニ搭載面上に固定保持可能なウェハ保
持装置の提供を目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, and provides a wafer holding device that reduces the contact thermal resistance of the wafer, prevents the occurrence of thermal distortion, and can securely hold the wafer fixedly on the mounting surface. For the purpose of providing.

［課題を解決するための手段］ 本発明に係わるウェハ保持装置は、ウェハを固定保持す
るために、真空吸着手段と静電吸着手段の２つの保持手
段を備えている。[Means for Solving the Problems] A wafer holding device according to the present invention includes two holding means, a vacuum suction means and an electrostatic suction means, in order to securely hold a wafer.

［作　用］ ウェハは真空吸引力及び静電力の両方により搭載面上に
吸着され、静電吸着力によりウェハを保持した状態で雰
囲気ガスを導入し接触熱抵抗を小さくする。[Function] The wafer is attracted onto the mounting surface by both vacuum suction force and electrostatic force, and while the wafer is held by the electrostatic attraction force, atmospheric gas is introduced to reduce the contact thermal resistance.

［実施例］ 第１（ａ）図は本発明に係わるウェハ保持装置の上面図
、第１（ｂ）図は第１（ａ）図のＡ−Ａ’断面図、第１
（ｃ）図は第１（ａ）図のＢ−Ｂ’断面図である。１は
ウェハ、２は装置本体、３は絶縁層である。装置本体２
は、Ａｍ２０．、ＳｉＣ等のセラミクスやＳＵＳ、Ａ１
等の金属からなる。絶縁層３は、ＡｆＬｚＯ８等の読電
率の高い材料からなり、厚さは５０〜４００μｍ程度で
ある。絶縁層が薄いと静電吸着力は大きくなるが、高電
圧を印加した際絶縁不良を起こし易く、厚いと静電吸着
力が小さくなる。この実施例ではＡＩＬｚＯｓを溶射形
成した後研磨し１００μｍの厚さにしている。この絶縁
層３上にウェハ１が搭載されクエへとの接触面を構成す
る。この接触面には真空吸着溝４が形成されている。真
空吸着溝４は真空配管１４及び真空吸着口５を介して図
示しない真空源に接続される。ウェハ保持装置本体２の
近傍の真空配管１４上には管内圧力を検知するための圧
力センサー６が設けられる。圧力センサー６と真空吸着
口５の間の真空配管１４上には三方弁７が設けられ、圧
力センサー側の管内に：囲気ガスを導入することが出来
る。[Example] Fig. 1(a) is a top view of a wafer holding device according to the present invention, Fig. 1(b) is a sectional view taken along line AA' in Fig. 1(a),
FIG. 1(c) is a sectional view taken along line BB' in FIG. 1(a). 1 is a wafer, 2 is a device main body, and 3 is an insulating layer. Device body 2
is Am20. , ceramics such as SiC, SUS, A1
Made of metals such as The insulating layer 3 is made of a material with high current reading rate, such as AfLzO8, and has a thickness of about 50 to 400 μm. When the insulating layer is thin, the electrostatic adsorption force becomes large, but when a high voltage is applied, it is easy to cause insulation failure, and when the insulating layer is thick, the electrostatic adsorption force becomes small. In this example, AILzOs is sprayed and then polished to a thickness of 100 μm. A wafer 1 is mounted on this insulating layer 3 to form a contact surface with the wafer. A vacuum suction groove 4 is formed on this contact surface. The vacuum suction groove 4 is connected to a vacuum source (not shown) via a vacuum pipe 14 and a vacuum suction port 5. A pressure sensor 6 is provided on the vacuum pipe 14 near the wafer holding device main body 2 to detect the pressure inside the pipe. A three-way valve 7 is provided on the vacuum pipe 14 between the pressure sensor 6 and the vacuum suction port 5, and an ambient gas can be introduced into the pipe on the pressure sensor side.

絶縁層３の下側には電極８が設けられる。電極８はスイ
ッチ９を介して高電圧源１０に接続される。スイッチ９
を閉じることにより電極８に高電圧が印加されウェハ１
との間に静電吸着力が発生しウェハ１は絶縁層３上に吸
着されて固定保持される。装置本体の材買が導体の場合
には電極８の下側にも絶縁層を設ける。An electrode 8 is provided below the insulating layer 3. Electrode 8 is connected via switch 9 to a high voltage source 10 . switch 9
By closing the wafer 1, a high voltage is applied to the electrode 8.
An electrostatic adsorption force is generated between the wafer 1 and the insulating layer 3, so that the wafer 1 is attracted and fixedly held on the insulating layer 3. If the main body of the device is made of a conductor, an insulating layer is also provided below the electrode 8.

装置本体２の内部には温調水（温度調整用冷却水）の循
環領域１１が設けられる。所望の温度に調整された冷却
水が流路の入口１２から供給され、循環領域１１を流れ
装置本体２及びウェハ１から熱を奪い温度上昇を防止し
て装置本体２及びウェハ１を所定温度に侃ち、出口１３
より排出される。A circulation area 11 for temperature control water (temperature control cooling water) is provided inside the device main body 2 . Cooling water adjusted to a desired temperature is supplied from the inlet 12 of the flow path, flows through the circulation area 11, removes heat from the apparatus main body 2 and the wafer 1, prevents temperature rise, and brings the apparatus main body 2 and the wafer 1 to a predetermined temperature. Kanchi, exit 13
more excreted.

上記ウェハ保持装置におけるクエへの吸着手順は以下の
通りである。The suction procedure for the wafer in the wafer holding device is as follows.

１）ウェハ１を装置本体２の絶縁層３上に搭載する。1) Mount the wafer 1 on the insulating layer 3 of the apparatus main body 2.

２）ウェハ１と装置本体２との間を真空吸着口５を介し
て真空吸引しウェハ１を絶縁層３上に真空吸着する。こ
のとき圧力センサー６により管内圧力を監視しウェハが
吸着されたことを確認する。2) Vacuum suction is applied between the wafer 1 and the apparatus main body 2 through the vacuum suction port 5, and the wafer 1 is vacuum suctioned onto the insulating layer 3. At this time, the pressure inside the tube is monitored by the pressure sensor 6 to confirm that the wafer has been attracted.

３）ウェハ１の真空吸着を確認後、スイッチ９を閉じ電
極８に高電圧を印加する。これによりウェハ１は真空吸
着力と静電吸着力の両方の力で装置本体に固定保持され
る。3) After confirming the vacuum suction of the wafer 1, close the switch 9 and apply a high voltage to the electrode 8. As a result, the wafer 1 is fixedly held on the apparatus main body by both the vacuum attraction force and the electrostatic attraction force.

４）次に、三方弁７を開き装置本体側の真空配管１４内
に雰囲気ガスが導入する。これによりウェハ１と装置本
体２の絶縁層３の接触面との間に霊囲気ガスが導入され
両者間の接触熱抵抗が低下する。雰囲気ガスとしては、
熱伝導率の高いＨｅガス等が適当である。このときウェ
ハ１は静電吸着力のみによって保持されている。4) Next, the three-way valve 7 is opened to introduce atmospheric gas into the vacuum piping 14 on the device main body side. As a result, an aether gas is introduced between the wafer 1 and the contact surface of the insulating layer 3 of the apparatus main body 2, and the contact thermal resistance between the two is reduced. As an atmospheric gas,
He gas or the like having high thermal conductivity is suitable. At this time, the wafer 1 is held only by electrostatic adsorption force.

上記実施例では、クエへを静電吸着した後、真空配管内
に雰囲気ガスを導入したが、別の構成として、真空配管
にガス導入経路を設けてもよい。In the above embodiment, after electrostatically adsorbing the Kueh, the atmospheric gas was introduced into the vacuum piping, but as another configuration, a gas introduction path may be provided in the vacuum piping.

これにより、雰囲気ガスが空気や窒素等の比較的熱伝導
率の低いガスであっても、別のガス導入経路から真空配
管内にＨｅ等の熱伝導率の高いガスを導入することが出
来、クエへと装置本体の接触面との間の接触熱抵抗を小
さくすることが出来る。As a result, even if the atmospheric gas is a gas with relatively low thermal conductivity such as air or nitrogen, a gas with high thermal conductivity such as He can be introduced into the vacuum piping from another gas introduction route. It is possible to reduce the contact thermal resistance between the contact surface of the contact surface and the main body of the device.

［発明の効果］ 以上説明したように、本発明においては、ウェハ保持手
段として、真空吸着手段及び静電吸着手段の両方を具備
することにより、ウェハを搭載面上に確実に固定保持し
、ウェハの凹凸（うねり）を装置本体の吸着面に倣って
矯正することが出来、またマスクパターンをウェハに露
光転写する際、ウェハの温度上昇を低く抑えることが出
来る。従って、マスク及びウェハの熱を効率良く外部に
逃がすことが出来、マスクパターンの熱歪を小さくする
ことが出来る。[Effects of the Invention] As explained above, in the present invention, by providing both the vacuum suction means and the electrostatic suction means as the wafer holding means, the wafer is securely held on the mounting surface and the wafer is It is possible to correct unevenness (undulations) by following the adsorption surface of the apparatus main body, and when a mask pattern is exposed and transferred to a wafer, the temperature rise of the wafer can be suppressed. Therefore, heat from the mask and wafer can be efficiently released to the outside, and thermal distortion of the mask pattern can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

第１（ａ）図は本発明に係わるウェハ保持装置の上面図
、第１（ｂ）図は第１（ａ）図のＡ−Ａ’断面図、第１
（ｃ）図は第１（ａ）図のＢ−Ｂ’断面図、第２（ａ）
図及び第２（ｂ）図は各々従来の真空吸着手段からなる
ウェハ保持装置の上面図及び断面図、第３（ａ）図及び
第３（ｂ）図は各々従来の静電吸着手段からなるウェハ
保持装置の上面図及び断面図である。 １・・・ウェハ、２・・・装置本体、３・・・絶縁層、
４・・・真空吸着溝、８・・・電極、１４・・・真空配
管。 特許出願人　　　キャノン株式会社 代理人　弁理士　　　伊　東　哲　也1(a) is a top view of the wafer holding device according to the present invention, and FIG. 1(b) is a sectional view taken along line AA' in FIG. 1(a).
(c) Figure 1(a) is a BB' cross-sectional view, and Figure 2(a) is
3(a) and 3(b) are respectively a top view and a cross-sectional view of a wafer holding device comprising conventional vacuum suction means, and FIGS. 3(a) and 3(b) each comprising conventional electrostatic suction means. FIG. 3 is a top view and a cross-sectional view of the wafer holding device. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Device main body, 3... Insulating layer,
4... Vacuum suction groove, 8... Electrode, 14... Vacuum piping. Patent applicant Canon Co., Ltd. agent Patent attorney Tetsuya Ito

Claims (4)

【特許請求の範囲】[Claims] （１）真空吸引力によりウェハを搭載面に固定保持する
真空吸着手段と、静電力によりウェハを搭載面に固定保
持する静電吸着手段とを具備したことを特徴とするウェ
ハ保持装置。(1) A wafer holding device characterized by comprising a vacuum suction means for fixing and holding a wafer on a mounting surface using vacuum suction force, and an electrostatic suction means for fixing and holding a wafer on a mounting surface using electrostatic force. （２）前記真空吸着手段は、ウェハ搭載面に設けた真空
吸着溝と該真空吸着溝に接続する真空配管とからなるこ
とを特徴とする特許請求の範囲第１項記載のウェハ保持
装置。(2) The wafer holding device according to claim 1, wherein the vacuum suction means comprises a vacuum suction groove provided on the wafer mounting surface and a vacuum pipe connected to the vacuum suction groove. （３）前記静電吸着手段は、ウェハ搭載面に設けた絶縁
層と該絶縁層の下面に設けた電極とからなることを特徴
とする特許請求の範囲第１項記載のウェハ保持装置。(3) The wafer holding device according to claim 1, wherein the electrostatic adsorption means comprises an insulating layer provided on the wafer mounting surface and an electrode provided on the lower surface of the insulating layer. （４）ウェハを搭載支持する装置本体の内部に温度調整
用媒体を循環させる温度調整手段を具備したことを特徴
とする特許請求の範囲第１項記載のウェハ保持装置。(4) The wafer holding device according to claim 1, further comprising temperature adjusting means for circulating a temperature adjusting medium inside the device main body on which the wafer is mounted and supported.
JP63218521A 1988-09-02 1988-09-02 Wafer holding method Expired - Fee Related JP2748127B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP63218521A JP2748127B2 (en) 1988-09-02 1988-09-02 Wafer holding method
DE68927364T DE68927364T2 (en) 1988-09-02 1989-08-31 Slide support device
US07/401,654 US4969168A (en) 1988-09-02 1989-08-31 Wafer supporting apparatus
EP89308822A EP0357424B1 (en) 1988-09-02 1989-08-31 A wafer supporting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63218521A JP2748127B2 (en) 1988-09-02 1988-09-02 Wafer holding method

Publications (2)

Publication Number Publication Date
JPH0267745A true JPH0267745A (en) 1990-03-07
JP2748127B2 JP2748127B2 (en) 1998-05-06

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JP63218521A Expired - Fee Related JP2748127B2 (en) 1988-09-02 1988-09-02 Wafer holding method

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Country Link
US (1) US4969168A (en)
EP (1) EP0357424B1 (en)
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Also Published As

Publication number Publication date
EP0357424A3 (en) 1990-10-17
DE68927364D1 (en) 1996-11-28
DE68927364T2 (en) 1997-03-06
US4969168A (en) 1990-11-06
EP0357424A2 (en) 1990-03-07
EP0357424B1 (en) 1996-10-23
JP2748127B2 (en) 1998-05-06

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