JPH0268967A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH0268967A JPH0268967A JP63220898A JP22089888A JPH0268967A JP H0268967 A JPH0268967 A JP H0268967A JP 63220898 A JP63220898 A JP 63220898A JP 22089888 A JP22089888 A JP 22089888A JP H0268967 A JPH0268967 A JP H0268967A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion area
- electrode
- pressure
- diffusion region
- insulation film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 230000010287 polarization Effects 0.000 claims abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000010354 integration Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 5
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は圧力センサーに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to pressure sensors.
従来の圧力センサーの一例として、シリコン単結晶の抵
抗が応力により変化するピエゾ抵抗効果を利用したもの
がある。One example of a conventional pressure sensor is one that utilizes the piezoresistive effect in which the resistance of a silicon single crystal changes with stress.
第３図に示すように、薄肉部（以下ダイヤフラムと記す
）１２を形成したシリコン基板１３上に拡散抵抗１１が
形成されている。拡散抵抗１１は第４図のようなホイー
ストンブリッジを構成しており、圧力の印加で生じたダ
イヤフラム１２の歪による拡散抵抗１１の変化を前記ホ
イーストンブリッジの電圧変化として出力する。As shown in FIG. 3, a diffused resistor 11 is formed on a silicon substrate 13 on which a thin portion (hereinafter referred to as a diaphragm) 12 is formed. The diffused resistor 11 constitutes a Wheatstone bridge as shown in FIG. 4, and a change in the diffused resistor 11 due to distortion of the diaphragm 12 caused by the application of pressure is output as a voltage change of the Wheatstone bridge.
上述した従来の圧力センサーは、圧力感知部がピエゾ抵
抗効果による抵抗変化をホイーストンブリッジにより検
出するようになっているので、この圧力感知部を複数並
べて一次元又は二次元の圧力センサを集積した場合、−
個の圧力感知部に一組のブリッジ配線が必要であり、集
積度を高めるのがむづかしいという問題点がある。In the conventional pressure sensor described above, the pressure sensing section detects the resistance change due to the piezoresistive effect using a Wheatstone bridge, so it is possible to integrate a one-dimensional or two-dimensional pressure sensor by arranging a plurality of pressure sensing sections. If, −
One set of bridge wiring is required for each pressure sensing section, which poses a problem in that it is difficult to increase the degree of integration.
本発明の圧力センサーは、−導電型半導体基板の表面に
設けた逆導電型の拡散領域と、前記拡散領域を含む表面
に設けた絶縁膜と、前記絶縁膜上に前記拡散領域と対向
させて設けた電極と、前記拡散領域を素子の一部とし前
記絶縁膜に受けた圧力により生じた分極で前記拡散領域
に発生した電荷を取り出すためのゲート素子とを有する
。The pressure sensor of the present invention includes: - a diffusion region of an opposite conductivity type provided on a surface of a conductivity type semiconductor substrate; an insulating film provided on a surface including the diffusion region; and an insulating film facing the diffusion region on the insulating film. and a gate element that uses the diffusion region as a part of the device and extracts charges generated in the diffusion region due to polarization caused by pressure applied to the insulating film.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ＞、（ｂ）は本発明の第１の実施例を説明す
るための半導体チップの断面図及び部分拡大断面図であ
る。FIGS. 1A and 1B are a cross-sectional view and a partially enlarged cross-sectional view of a semiconductor chip for explaining a first embodiment of the present invention.
第１図（ａ）、（ｂ）に示すように、Ｐ型シリコン基板
１の上に設けたゲート絶縁膜２の上に選択的にゲート電
極３を設け、ゲート電極３に整合してＰ型シリコン基板
１内に選択的にＮ型拡散領域４．５を設ける。次に、ゲ
ート電極３を含む表面に酸化シリコン膜６を設けてＮ型
拡散領域５のコンタクト用開孔部を設ける。次に、前記
開孔部を含む表面にアルミニウム層を堆積して選択的に
エツチングし、Ｎ型拡散領域４に対向させた電極７と前
記開孔部のＮ型拡散領域５に接続する電極８をそれぞれ
設ける。次に、電ｆ！７．８を含む表面に弾力性があり
復元の速い例えばエチレンプロピレンゴム等の保護膜９
を設けて圧力センサを構成する。As shown in FIGS. 1(a) and (b), a gate electrode 3 is selectively provided on a gate insulating film 2 provided on a P-type silicon substrate 1, and a P-type N-type diffusion regions 4.5 are selectively provided in silicon substrate 1. Next, a silicon oxide film 6 is provided on the surface including the gate electrode 3, and a contact opening for the N-type diffusion region 5 is provided. Next, an aluminum layer is deposited on the surface including the opening and selectively etched to form an electrode 7 facing the N-type diffusion region 4 and an electrode 8 connected to the N-type diffusion region 5 in the opening. are provided respectively. Next, electric f! 7. Protective film 9, such as ethylene propylene rubber, which has an elastic surface and quickly recovers, including 7.8.
A pressure sensor is constructed by providing the following.
ここで、保護膜９の上に試料１０を載せて圧力を加える
と、圧力が保護膜９を介して酸化シリコン膜６に加わり
、酸化シリコン膜６は加えられた圧力に比例して分極し
、電極７とＮ型拡散領域４との間に電荷を発生する。電
極７を接地し、ゲート電極３に電圧を印加してＮ型拡散
領域４の電荷をＮ型拡散領域５に転送し、電極８より出
力する。Here, when the sample 10 is placed on the protective film 9 and pressure is applied, the pressure is applied to the silicon oxide film 6 through the protective film 9, and the silicon oxide film 6 is polarized in proportion to the applied pressure. Charges are generated between the electrode 7 and the N-type diffusion region 4. Electrode 7 is grounded, and a voltage is applied to gate electrode 3 to transfer the charges in N-type diffusion region 4 to N-type diffusion region 5 and output from electrode 8 .
第２図（ａ）、（ｂ）は本発明の第２の実施例を説明す
るための半導体チップの断面図及び部分拡大断面図であ
る。FIGS. 2(a) and 2(b) are a cross-sectional view and a partially enlarged cross-sectional view of a semiconductor chip for explaining a second embodiment of the present invention.
第２図（ａ）、（ｂ）に示すように、Ｐ型シリコン基板
１の上に設けたゲート絶縁膜２の上に選択的に転送ゲー
ト電極１１を設け、転送ゲート電極１１にほぼ整合して
Ｐ型シリコン基板１内に選択的にＮ型拡散領域４を設け
る。次に転送ゲート電極１１を含む表面に酸化シリコン
膜６を設け、酸化シリコン膜６の上にＮ型拡散領域４に
対向させて電極６を選択的に設ける。次に、電極６を含
む表面に弾力性のある保護膜９を設けて圧力センサを構
成する。As shown in FIGS. 2(a) and 2(b), the transfer gate electrode 11 is selectively provided on the gate insulating film 2 provided on the P-type silicon substrate 1, and the transfer gate electrode 11 is almost aligned with the transfer gate electrode 11. Then, an N-type diffusion region 4 is selectively provided in the P-type silicon substrate 1. Next, a silicon oxide film 6 is provided on the surface including the transfer gate electrode 11, and the electrode 6 is selectively provided on the silicon oxide film 6 so as to face the N-type diffusion region 4. Next, an elastic protective film 9 is provided on the surface including the electrode 6 to constitute a pressure sensor.
第２の実施例では、第１の実施例と同様に試料１０によ
り加えられた圧力に比例して発生したＮ型拡散領域４の
電荷を、転送ゲート電極１１に電圧を加えることにより
作られた転送チャネル１２に移し、ＣＣＤ機構を利用し
てシリアルな出力を得るため、雑音レベルが小さく、感
度゛が高いという利点がある。In the second embodiment, similarly to the first embodiment, the charge in the N-type diffusion region 4 generated in proportion to the pressure applied by the sample 10 is generated by applying a voltage to the transfer gate electrode 11. Since the signal is transferred to the transfer channel 12 and a serial output is obtained using a CCD mechanism, the noise level is low and the sensitivity is high.
以上説明したように本発明は、拡散領域と、拡散領域上
に設けた絶縁膜と、絶縁膜上に設けた電極との組合せに
よる圧力感知部の拡散領域に発生した電荷を拡散領域を
素子の一部とするゲート素子部により読み出す構成によ
り、圧力センサの高集積化を実現できるという効果を有
する。As explained above, the present invention utilizes a combination of a diffusion region, an insulating film provided on the diffusion region, and an electrode provided on the insulating film to transfer charges generated in the diffusion region of the pressure sensing section to the diffusion region of the element. The configuration in which reading is performed using the gate element section, which is a part of the pressure sensor, has the effect of realizing high integration of the pressure sensor.
本発明の圧力センサを例えばロボット等の圧力感知部に
実装すれば、各種の物体の様々な接触に対する微妙な違
いを２次元的に感じ分けることが可能となる。If the pressure sensor of the present invention is installed in a pressure sensing section of a robot or the like, it becomes possible to two-dimensionally sense subtle differences in contact with various objects.
第１図（ａ＞、（ｂ）及び第２図（ａ＞、（ｂ）は本発
明の第１及び第２の実施例を説明するための半導体チッ
プの断面図及び部分拡大断面図、第３図は従来の圧力セ
ンサを説明するための半導体チップの一部切欠斜視図、
第４図は従来の圧力センサを説明するための等価回路図
である。
１・・・Ｐ型シリコン基板、２・・・ゲート絶縁膜、３
・・・ゲート電極、４，５・・・Ｎ型拡散領域、６・・
・酸化シリコン膜、７．８・・・電極、９・・・保護膜
、１０・・・試料、１１・・・拡散抵抗、１２・・・ダ
イアフラム、１３・・・シリコン基板、１４・・・アル
ミニウム配線。
代理人 弁理士 内 原 晋
茅
図1(a>, (b)) and FIG. 2(a>, (b) are cross-sectional views and partially enlarged cross-sectional views of semiconductor chips for explaining the first and second embodiments of the present invention. Figure 3 is a partially cutaway perspective view of a semiconductor chip to explain a conventional pressure sensor;
FIG. 4 is an equivalent circuit diagram for explaining a conventional pressure sensor. 1...P-type silicon substrate, 2...gate insulating film, 3
...Gate electrode, 4, 5...N-type diffusion region, 6...
- Silicon oxide film, 7.8... Electrode, 9... Protective film, 10... Sample, 11... Diffused resistance, 12... Diaphragm, 13... Silicon substrate, 14... Aluminum wiring. Agent Patent Attorney Shinkazu Uchihara
Claims (1)
域と、前記拡散領域を含む表面に設けた絶縁膜と、前記
絶縁膜上に前記拡散領域と対向させて設けた電極と、前
記拡散領域を素子の一部とし前記絶縁膜に受けた圧力に
より生じた分極で前記拡散領域に発生した電荷を取り出
すためのゲート素子とを有することを特徴とする圧力セ
ンサ。a diffusion region of an opposite conductivity type provided on a surface of a semiconductor substrate of one conductivity type; an insulating film provided on a surface including the diffusion region; an electrode provided on the insulating film to face the diffusion region; 1. A pressure sensor comprising: a gate element for extracting charge generated in the diffusion region by polarization caused by pressure applied to the insulating film, the region being a part of the element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63220898A JP2901253B2 (en) | 1988-09-02 | 1988-09-02 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63220898A JP2901253B2 (en) | 1988-09-02 | 1988-09-02 | Pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0268967A true JPH0268967A (en) | 1990-03-08 |
| JP2901253B2 JP2901253B2 (en) | 1999-06-07 |
Family
ID=16758261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63220898A Expired - Fee Related JP2901253B2 (en) | 1988-09-02 | 1988-09-02 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2901253B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008075390A (en) * | 2006-09-22 | 2008-04-03 | Kawasaki Heavy Ind Ltd | Mobile auditorium |
| JP2015219044A (en) * | 2014-05-14 | 2015-12-07 | キヤノン株式会社 | Force sensor and grasping device |
| CN111504540A (en) * | 2019-01-30 | 2020-08-07 | 美蓓亚三美株式会社 | sensor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011013179A (en) * | 2009-07-06 | 2011-01-20 | Yamatake Corp | Pressure sensor and method of manufacturing pressure sensor |
-
1988
- 1988-09-02 JP JP63220898A patent/JP2901253B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008075390A (en) * | 2006-09-22 | 2008-04-03 | Kawasaki Heavy Ind Ltd | Mobile auditorium |
| JP2015219044A (en) * | 2014-05-14 | 2015-12-07 | キヤノン株式会社 | Force sensor and grasping device |
| US10126190B2 (en) | 2014-05-14 | 2018-11-13 | Canon Kabushiki Kaisha | Capacitive force sensor and grasping device |
| CN111504540A (en) * | 2019-01-30 | 2020-08-07 | 美蓓亚三美株式会社 | sensor device |
| CN111504540B (en) * | 2019-01-30 | 2023-10-03 | 美蓓亚三美株式会社 | sensor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2901253B2 (en) | 1999-06-07 |
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|
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