JPH0269350A - Dielectric ceramic composition for microwave - Google Patents
Dielectric ceramic composition for microwaveInfo
- Publication number
- JPH0269350A JPH0269350A JP63218925A JP21892588A JPH0269350A JP H0269350 A JPH0269350 A JP H0269350A JP 63218925 A JP63218925 A JP 63218925A JP 21892588 A JP21892588 A JP 21892588A JP H0269350 A JPH0269350 A JP H0269350A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- dielectric ceramic
- composition
- ceramic composition
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 26
- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 6
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 4
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910003447 praseodymium oxide Inorganic materials 0.000 claims abstract description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 3
- 229910001954 samarium oxide Inorganic materials 0.000 abstract description 2
- 229940075630 samarium oxide Drugs 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 2
- 229910002637 Pr6O11 Inorganic materials 0.000 abstract 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 101100389125 Rattus norvegicus Egln3 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、誘電体共振器等のマイクロ波回路素子に用い
られる誘電体材料に係り、金属酸化物を焼成して得られ
る高誘電率で、誘電損失が小さく、誘電率の温度係数の
小さい誘電体磁器組成物に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a dielectric material used in microwave circuit elements such as a dielectric resonator, and relates to a dielectric material with a high dielectric constant obtained by firing a metal oxide. , relates to a dielectric ceramic composition having low dielectric loss and a small temperature coefficient of dielectric constant.
（従来の技術）
近年、マイクロ波回路技術の進歩に伴い１回路の小型化
が図られている。(Prior Art) In recent years, with advances in microwave circuit technology, miniaturization of a single circuit has been attempted.
従来から、このマイクロ波周波数帯（３００ＭＨｚ〜３
０Ｇ）１２）の回路には、空胴共振量、アンテナなどが
用いられて来たが、これらはマイクロ波の波長と同程度
の大きさになるため回路の小型化には不向きであった。Conventionally, this microwave frequency band (300MHz to 3
Cavity resonance, antennas, and the like have been used in the circuits of 0G) and 12), but these are not suitable for miniaturizing the circuits because their size is about the same as the wavelength of the microwave.
これに対し、近年、マイクロ波周波数帯で使用される誘
電体共振器を用いたマイクロ波フィルタ、発振器の周波
数安定化を計るための小型誘電体共振器、マイクロ波Ｉ
Ｃ用のコンデンサや基盤等に用いられる誘電体磁器等、
マイクロ波回路に誘電体磁器を用いて回路の小型化を図
る応用がなされている。これらの磁器に要求される特性
は、マイクロ波周波数帯での誘電損失が小さく、使用周
波数帯に適した高い誘電率をもち、誘電率の温度係数が
小さい事である。In contrast, in recent years, microwave filters using dielectric resonators used in the microwave frequency band, small dielectric resonators for stabilizing the frequency of oscillators, microwave I
Dielectric ceramics used for C capacitors and substrates, etc.
Dielectric ceramics have been used in microwave circuits to reduce the size of the circuits. The characteristics required of these ceramics are a low dielectric loss in the microwave frequency band, a high dielectric constant suitable for the frequency band used, and a small temperature coefficient of the dielectric constant.
従来からこれらの特性を満足する磁器材料としては、
Ｂａ２Ｔ１ｇ０２ ｏ系、 ＭｇＴｉＯ３−ＣａＴｉ０
３系、 Ｚｒ０２−ＴｉＯ、−５ｎＯ□系などが知られ
てはいるが、これらはいずれもεｒが３０〜４０程度と
小さいため、０．１〜４ＧＨｚの周波数帯では素子が大
きくなり、実用上問題が多す蔦。Traditionally, porcelain materials that satisfy these characteristics include:
Ba2T1g02 o system, MgTiO3-CaTi0
3 series, Zr02-TiO, -5nO□ series, etc. are known, but all of these have a small εr of about 30 to 40, so the elements become large in the frequency band of 0.1 to 4 GHz, making them impractical. Ivy has many problems.
この０．１ＧＨｚ〜４ ＧＨｚの周波数帯での使用に適
した材料としては、εｒが７０〜９０程度のものとして
、Ｂａｄ−Ｔｉｅ、−５ｍ２０．系、 Ｂａ０−ＴｉＯ
，−Ｎｄ、０３系などの組成物を使用している。このＢ
ａ０−ＴｉＯ□−５ｏ１２０．系の誘電体組成物につい
ては特公昭６０−５１２０１号に開示されている。Materials suitable for use in this frequency band of 0.1 GHz to 4 GHz include Bad-Tie, -5m20. system, Ba0-TiO
, -Nd, 03 series, etc. are used. This B
a0-TiO□-5o120. The dielectric composition of this type is disclosed in Japanese Patent Publication No. Sho 60-51201.
（発明が解決しようとする問題点）
しかし、この特公昭６０−５１２０１号に開示されてい
るような従来の誘電体磁器組成物を用いて、誘電体共振
器を製作した場合、共振周波数の温度係数（τｆ）がＯ
（ＰＰｍ／”Ｃ）付近では、組成変動による温度係数の
変化が大きく、また無負荷Ｑが小さいなど、実用上で問
題点が多かった。(Problems to be Solved by the Invention) However, when a dielectric resonator is manufactured using a conventional dielectric ceramic composition as disclosed in Japanese Patent Publication No. 60-51201, the temperature at the resonant frequency The coefficient (τf) is O
In the vicinity of (PPm/''C), there were many problems in practical use, such as large changes in temperature coefficient due to compositional fluctuations and small no-load Q.
（問題点を解決するための手段）
発明者らは、これらの欠点を鑑み種々の組成系について
検討した結果、酸化バリウム（ＢａＯ）と酸化チタン（
ＴｉＯ２）と酸化サマリウム（ＳＩｌｌ、０３）と酸化
セリウム（ＣｅＯ，）と酸化プラセオジム（ＰｒｓＯｔ
ｘ）とからなる誘電体磁器組成物であって１組成式をｘ
Ｂａｏ＊ｙＴｉＯ，・（ｚ−ｚ、−ｚ、 ）ＳｍＯ）、
、 ・ｚ１ＣｅＯ２・ｚ、 Ｐｒｙｌｌ、 。(Means for Solving the Problems) In view of these drawbacks, the inventors investigated various composition systems and found that barium oxide (BaO) and titanium oxide (
TiO2), samarium oxide (SIll, 03), cerium oxide (CeO,), and praseodymium oxide (PrsOt)
A dielectric ceramic composition consisting of x), where one composition formula is x
Bao*yTiO, (zz, -z, )SmO),
, ・z1CeO2・z, Pryll, .
と表わした時、組成範囲がモル分率で、７≦ｘ≦１７゜
５７≦ｙ≦６３．２３≦Ｚ≦３３． Ｏ＜ｚｔ≦１２．
ｏ＜ｚｓ≦１まただし１０＜ｚ−ｚｌ−ｚ、の範囲に
ある誘電体磁器組成物が、又前記主成分組成に対し、酸
化イツトリウムを５ｗｔ％以下添加含有してなる誘電体
磁器組成物が、誘電体共振器、マイクロ波用コンデンサ
。When expressed as, the composition range is molar fraction: 7≦x≦17°57≦y≦63.23≦Z≦33. O<zt≦12.
A dielectric ceramic composition which satisfies o<zs≦1 but 10<z-zl-z and further contains yttrium oxide in an amount of 5 wt% or less relative to the main component composition. are dielectric resonators and microwave capacitors.
基盤等に用いる誘電体磁器として優れた特性をもち、実
用に供するに適した材料である事を見出した。It was discovered that this material has excellent properties as a dielectric ceramic used for substrates, etc., and is suitable for practical use.
（実施例）
以下本発明を実施例に従って説明する。試料を作成する
ための出発原料は、９９．９％以上の高純度のＢａＣ０
，、Ｔｉｅ、 、Ｓｍ２０． 、ＣｅＯ，、Ｐｒ、０□
、およびＹ２Ｏ３の粉末を用い、所定の各組成になる様
に秤量し、ボールミルに純水とともに投入し湿式混合を
行なった。この混合物を乾燥させた後、８００℃〜１１
００℃で４時間仮焼し、得られた仮焼粉末を所定の各組
成になる様に調合して、再びメノウボールミルに純水と
ともに投入し、湿式粉砕を行なった。この様にして得ら
れた粉砕物を乾燥させた後、バインダ水溶液を添加混練
して得た造粒粉末を１ 、５ ｔｏｎ／ｄの圧力を加え
て成形し、得られた成形体を１２００℃〜１５００℃で
２時間空気中で焼成を行なって焼成体を得た。その後、
得られた磁器を用いて誘電体共振器を構成し、誘電体共
振器の共振周波数と無負荷Ｑを測定して誘電率を求めた
。得られた誘電体共振器の共振周波数は ３〜６ Ｇ）
Ｉｚであった。(Examples) The present invention will be described below according to Examples. The starting material for preparing the sample is BaC0 with a high purity of 99.9% or more.
,,Tie, ,Sm20. ,CeO,,Pr,0□
, and Y2O3 were weighed to give each predetermined composition, and put into a ball mill together with pure water for wet mixing. After drying this mixture, 800℃~11
Calcined powder was calcined at 00° C. for 4 hours, and the resulting calcined powder was mixed to have each predetermined composition, and then put into the agate ball mill together with pure water again for wet pulverization. After drying the pulverized product obtained in this way, the granulated powder obtained by adding and kneading an aqueous binder solution was molded by applying a pressure of 1.5 ton/d, and the molded product obtained was heated at 1200°C. Firing was performed in air at ~1500°C for 2 hours to obtain a fired body. after that,
A dielectric resonator was constructed using the obtained ceramic, and the resonant frequency and no-load Q of the dielectric resonator were measured to determine the dielectric constant. The resonant frequency of the obtained dielectric resonator is 3 to 6 G)
It was Iz.
共振周波数の温度依存性は誘電体共振器の共振周波数の
温度変化を一２５℃〜＋８５℃の間で測定して求めた。The temperature dependence of the resonant frequency was determined by measuring the temperature change of the resonant frequency of the dielectric resonator between -25°C and +85°C.
得られた試料での測定結果を第１表に示す。この表中で
拳印を付した試料は本発明の範囲外の比較例であり、こ
れ以外の試料が本発明の範囲内の実施例である。Table 1 shows the measurement results for the obtained samples. Samples marked with a fist in this table are comparative examples outside the scope of the present invention, and the other samples are examples within the scope of the present invention.
（発明の効果）
以上のように、本発明にかかる誘電体磁器組成物は、マ
イクロ波周波数において誘電率が８０程度と大きく、か
つ誘電体損失が小さいと同時に、誘電率の温度係数が小
さい材料であることがわかる。(Effects of the Invention) As described above, the dielectric ceramic composition according to the present invention is a material having a large dielectric constant of about 80 at microwave frequencies, low dielectric loss, and a small temperature coefficient of dielectric constant. It can be seen that it is.
Claims (2)
）と酸化サマリウム（Ｓｍ＿２Ｏ＿３）と酸化セリウム
（ＣｅＯ＿２）と酸化プラセオジム（Ｐｒ＿６Ｏ＿１＿
１）とからなる誘電体磁器組成物であって、組成式を ｘＢａＯ・ｙＴｉＯ＿２・（ｚ−ｚ＿１−ｚ＿２）Ｓｍ
Ｏ＿３＿／＿２・ｚ＿１ＣｅＯ＿２・ｚ＿２ＰｒＯ＿１
＿１＿／＿６と表わした時、組成範囲がモル分率で、７
≦ｘ≦１７，５７≦ｙ≦６３，２３≦ｚ≦３３，０＜ｚ
＿１≦１２，０＜ｚ＿２≦１２ただし１０＜ｚ−ｚ＿１
−ｚ＿２の範囲にある事を特徴とする誘電体磁器組成物
。1. Barium oxide (BaO) and titanium oxide (TiO_2
), samarium oxide (Sm_2O_3), cerium oxide (CeO_2), and praseodymium oxide (Pr_6O_1_
1) A dielectric ceramic composition consisting of
O_3_/_2・z_1CeO_2・z_2PrO_1
When expressed as _1_/_6, the composition range is the mole fraction, and 7
≦x≦17,57≦y≦63,23≦z≦33,0<z
_1≦12,0<z_2≦12 but 10<z−z_1
- A dielectric ceramic composition characterized by being in the range of -z_2.
）と酸化サマリウム（Ｓｍ＿２Ｏ＿３）と酸化セリウム
（ＣｅＯ＿２）と酸化プラセオジム（Ｐｒ＿６Ｏ＿１＿
１）とからなる誘電体磁器組成物であって、組成式を ｘＢａＯ・ｙＴｉＯ＿２・（ｚ−ｚ＿１−ｚ＿２）Ｓｍ
Ｏ＿３＿／＿２・ｚ＿１ＣｅＯ＿２・ｚ＿２ＰｒＯ＿１
＿１＿／＿６と表わした時、組成範囲がモル分率で、７
≦ｘ≦１７，５７≦ｙ≦６３，２３≦ｚ≦３３，０＜ｚ
＿１≦１２，０＜ｚ＿２≦１２ただし１０＜ｚ−ｚ＿１
−ｚ＿２の範囲にある主成分組成に対し、酸化イットリ
ウムを５ｗｔ％以下添加含有している事を特徴とする誘
電体磁器組成物。2. Barium oxide (BaO) and titanium oxide (TiO_2
), samarium oxide (Sm_2O_3), cerium oxide (CeO_2), and praseodymium oxide (Pr_6O_1_
1) A dielectric ceramic composition consisting of
O_3_/_2・z_1CeO_2・z_2PrO_1
When expressed as _1_/_6, the composition range is the mole fraction, and 7
≦x≦17,57≦y≦63,23≦z≦33,0<z
_1≦12,0<z_2≦12 but 10<z−z_1
A dielectric ceramic composition characterized by containing 5 wt% or less of yttrium oxide with respect to the main component composition in the range of -z_2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218925A JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218925A JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0269350A true JPH0269350A (en) | 1990-03-08 |
| JPH0519501B2 JPH0519501B2 (en) | 1993-03-16 |
Family
ID=16727473
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63218925A Granted JPH0269350A (en) | 1988-08-31 | 1988-08-31 | Dielectric ceramic composition for microwave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0269350A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033784A (en) * | 1983-08-04 | 1985-02-21 | Sanyo Electric Co Ltd | Ghost eliminating device |
| JPS6118283A (en) * | 1984-07-04 | 1986-01-27 | Nec Corp | Automatic level correcting device of analog picture signal |
| JPH0236546A (en) * | 1988-07-27 | 1990-02-06 | Hitachi Ltd | Test of semiconductor memory |
-
1988
- 1988-08-31 JP JP63218925A patent/JPH0269350A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6033784A (en) * | 1983-08-04 | 1985-02-21 | Sanyo Electric Co Ltd | Ghost eliminating device |
| JPS6118283A (en) * | 1984-07-04 | 1986-01-27 | Nec Corp | Automatic level correcting device of analog picture signal |
| JPH0236546A (en) * | 1988-07-27 | 1990-02-06 | Hitachi Ltd | Test of semiconductor memory |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519501B2 (en) | 1993-03-16 |
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