JPH0270099A - Method and apparatus for electroplating - Google Patents

Method and apparatus for electroplating

Info

Publication number
JPH0270099A
JPH0270099A JP22204188A JP22204188A JPH0270099A JP H0270099 A JPH0270099 A JP H0270099A JP 22204188 A JP22204188 A JP 22204188A JP 22204188 A JP22204188 A JP 22204188A JP H0270099 A JPH0270099 A JP H0270099A
Authority
JP
Japan
Prior art keywords
plating
coils
film thickness
coil
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22204188A
Other languages
Japanese (ja)
Inventor
Yoshihiro Mori
森 好宏
Takahide Sakamoto
隆秀 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP22204188A priority Critical patent/JPH0270099A/en
Publication of JPH0270099A publication Critical patent/JPH0270099A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To precisely control both film thickness of a magnetic substance thin film and distribution of film thickness by arranging a plurality of coils in the vicinity of a base plate and measuring the change of impedance at every coil and changing current caused to flow through an electrode opposite to the base plate. CONSTITUTION:Coils 10-12 are arranged in the vicinity of the side opposite to the surface of a plated film 2 on a base plate 9 in a plating tank 1 and anodes 5-7 are allowed to correspond to the respective coils 10-12 and connected with the plating power sources 20-1-20-3. In this constitution, plating is started on the base plate 9 and AC is impressed to the coils 10-12 to generate eddy current and the change of impedance of the coils 10-12 due to this magnetic field is inputted to a data register 18 via an impedance measuring device 15. Then preset value of a film thickness range setting device 17 is compared with the measured value of the data register 18 by a comparator 19 and a command is sent to the power source of the anode correspondent to the coil wherein the data are deviated from the range and plating current is individually controlled. Thereby the high-quality magnetic substance plated film 2 is produced at high yield.

Description

【発明の詳細な説明】 (イ)産業上の利用分野 本発明は磁性体めっき方法及び装置の改良に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to improvements in a magnetic plating method and apparatus.

(ロ)従来の技術 磁性薄膜として一般的な二/ケル鉄合金(パーマロイ)
膜を磁場中において電気めっきで得る方法が工業的に広
く用いられており、それに用いる装置は、浴槽、撹拌装
置、浴循環ボング、磁場発生装置などを備えている。こ
れらの装置では、膜厚及び膜厚分布はめっき終了後に測
定するため、めっき浴内のイオン濃度分布、浴温度、め
っき電流密度等の膜厚や膜厚分布に影響するパラメータ
をできるだけ一定にしたうえで、めっき時間を制御する
ことによって所定厚のめつき膜を得ていた。
(b) Conventional technology Ni/Kel iron alloy (permalloy), which is common as a magnetic thin film
A method of obtaining a film by electroplating in a magnetic field is widely used in industry, and the equipment used therefor includes a bath, a stirring device, a bath circulation bong, a magnetic field generator, and the like. With these devices, the film thickness and film thickness distribution are measured after plating is completed, so parameters that affect film thickness and film thickness distribution, such as ion concentration distribution in the plating bath, bath temperature, and plating current density, are kept as constant as possible. Then, by controlling the plating time, a plated film of a predetermined thickness was obtained.

しかし、上記のめつきパラメータは測定がむすかしいう
え、めっき中一定値に保つことが極めて困難であるので
、再現性が悪く、生産性も低く、高品質の磁性薄膜を高
歩留りで得る方法が望まれていIこ。
However, the above plating parameters are difficult to measure and extremely difficult to maintain at constant values during plating, resulting in poor reproducibility and low productivity, making it difficult to obtain high-quality magnetic thin films at high yields. I'm wanted.

これに対して従来、膜厚を測定しながらめっきを行うこ
とによって所定の膜厚の磁性薄膜を得る方法として、(
1)往復運動する撹拌装置にコイルを備え、磁場中で形
成されるめっき膜を通過する磁束を切る際に発生する電
圧又はインダクタンスの変化を検出する方法、(2)磁
場中で形成されるめっき膜の周囲にコイルを配置し、め
っき膜内を通過する磁束の量を測定する方法及び(3)
往復運動する撹拌装置に可干渉平行光発生装置と光強度
検出装置を設け、形成されるめっき膜と下地からの反射
光との干渉による強度変化を検出する方法、なとがあっ
た。 これらの方法によれば、磁性薄膜の厚さを精度よ
く制御できる。ところが最近は、磁性薄膜を形成すべき
基板が大型化してきており、前記の方法を用いても、こ
のような基板に形成される膜厚の分布を均一にすること
は困難である。
In contrast, the conventional method of obtaining a magnetic thin film with a predetermined thickness by plating while measuring the film thickness was (
1) A method of equipping a reciprocating stirring device with a coil and detecting changes in voltage or inductance that occur when cutting the magnetic flux passing through a plating film formed in a magnetic field; (2) Plating formed in a magnetic field. A method of arranging a coil around the film and measuring the amount of magnetic flux passing through the plating film, and (3)
There is a method in which a reciprocating stirring device is equipped with a coherent parallel light generator and a light intensity detector, and changes in intensity due to interference between the formed plating film and the light reflected from the base are detected. According to these methods, the thickness of the magnetic thin film can be controlled with high precision. However, recently, substrates on which magnetic thin films are to be formed have become larger, and even if the above-mentioned method is used, it is difficult to make the distribution of film thickness uniform on such substrates.

例えは前記(1)及び(2)の方法では、めっき膜を通
過する総磁束の変化をコイルで検出しているので、めっ
き膜の平均化した膜厚が測定される。このため、大型の
基板内では所定の膜厚に達しない部分が生じ、歩留りが
低下する。さらに所定の膜厚に達しない部分の基板内で
の分布は再現性かなく、生産性も低下する。又、(3)
の方法は、大型の基板になれはなるほど、基板上を往復
する撹拌装置に設けられた光強度検出装置等とめつき膜
を形成する基板の間隔を一定に維持することか構造上困
難であり、また基板の全面に互って膜厚分布を測定する
ことも構造上困難である。
For example, in the methods (1) and (2) above, since the change in the total magnetic flux passing through the plating film is detected by a coil, the averaged film thickness of the plating film is measured. For this reason, some parts of the large substrate do not reach a predetermined film thickness, resulting in a decrease in yield. Furthermore, the distribution within the substrate of the portion where the film thickness does not reach a predetermined thickness is not reproducible, and productivity also decreases. Also, (3)
In this method, as the size of the substrate becomes larger, it becomes structurally difficult to maintain a constant distance between the light intensity detection device installed in the stirring device that moves back and forth over the substrate and the substrate on which the plating film is formed. Furthermore, it is structurally difficult to measure the film thickness distribution over the entire surface of the substrate.

そこて本発明者はめっき中の膜厚測定方法として電磁誘
導を用いること、及びそのための装置を特願昭63−8
5850号として提案した。この電磁誘導を用いる方法
は第1図に示すようにめっき膜2を形成する基板9の近
傍にコイル3を配置し、該コイルに交流電流を印加して
発生する交流磁場でめっき中のめつき膜2に渦電流を発
生させ、この渦電流の作る磁場によるコイル3のインピ
ーダンス変化をインピーダンス測定装置15で検出する
ものである。
Therefore, the present inventor proposed the use of electromagnetic induction as a method for measuring film thickness during plating, and a device for that purpose in the patent application filed in 1983-8.
It was proposed as No. 5850. As shown in Fig. 1, this method using electromagnetic induction involves placing a coil 3 near a substrate 9 on which a plating film 2 is to be formed, and applying an alternating current to the coil to generate an alternating current magnetic field during plating. An eddy current is generated in the membrane 2, and an impedance measurement device 15 detects a change in the impedance of the coil 3 due to the magnetic field created by this eddy current.

磁性体薄膜のめつき膜厚を測定するには、コイルに印加
する交流電流の周波数を高周波にする必要か有る。本発
明で用いる方法では周波数を500 KHz−30MH
zに設定した場合、0.2μm−5μmの薄膜を高精度
に測定可能である。また前述のように、磁性体薄膜のめ
つきは一般に数10〜数1000エルステッドの磁場中
で行うが、前述のように交流電流の周波数を500 K
Hz〜30MHzの高周波にすれば、これらの磁場中に
おいてもコイルのインピーダンスの変化を示す電気信号
をノイズなく検出できることがわかった。
To measure the plating thickness of a magnetic thin film, it is necessary to increase the frequency of the alternating current applied to the coil. In the method used in the present invention, the frequency is 500 KHz-30MHz.
When set to z, thin films of 0.2 μm to 5 μm can be measured with high precision. Furthermore, as mentioned above, plating of magnetic thin films is generally carried out in a magnetic field of several tens to several thousand oersteds;
It has been found that by using a high frequency of Hz to 30 MHz, it is possible to detect electrical signals indicating changes in coil impedance without noise even in these magnetic fields.

ところで、電磁誘導法で測定できる膜厚はコイル3の発
生する磁場の大きさに応じた限られた範囲のものである
、そこで複数のコイルを配置して、各々のコイルのイン
ピーダンス変化を切り換えて検出することにより、基板
9全面の膜厚の情報を集めるようにすれば、膜厚分布を
測定でき、基板9の一部が所定膜厚に達しない場合を防
くことが可能である。
By the way, the film thickness that can be measured using the electromagnetic induction method is within a limited range depending on the magnitude of the magnetic field generated by the coil 3. Therefore, by arranging multiple coils and switching the impedance change of each coil. If information on the film thickness of the entire surface of the substrate 9 is collected through detection, the film thickness distribution can be measured, and it is possible to prevent a case where a part of the substrate 9 does not reach a predetermined film thickness.

このように複数個のコイルを配置する場合、コイルの形
状や駆動周波数によっては相互に干渉を起こすことがあ
り望ましくない。そこで複数個のコイルを切替えて測定
する方法が有効である。この方法では複数個のコイルを
同時に励振することがないので相互干渉を生じない。更
に、プローブの構造、寸法、配置距離等を工夫すること
により、切替え時間を短縮することが可能になる。すな
わち、この方法に用い得るコイルには、プローブ型(内
磁型)とポット型(外磁型)とが有るが、船釣に言って
干渉を防止するためにはコアの外部に磁気シールド効果
のあるリング(例えば銅製)を有するプローブ型が望ま
しい。また一般にこのようなコイルで用いる電流の周波
数は、そのコイルの共振周波数以下(例えば! −10
MHz)にするが、この範囲の周波数ではプローブ型の
コイルの場合そのコアの直径を0.5mm以下にすれば
コイルとうしを10mm以下に近接させて配置しても隣
接するコイル間の干渉がなく測定することができる。ま
たプローブ型のコイルのコアの回りを囲むリングの厚さ
を厚ぐずれば、10MHz〜30M112の高周波でも
干渉なく動作可能である。なお、ポット型のコイルでも
コイルのコアの直径を3mm以下にすればコイルどうし
を10mm以下に近接させても10111H2まで測定
が可能であった。
When a plurality of coils are arranged in this manner, mutual interference may occur depending on the shape and drive frequency of the coils, which is not desirable. Therefore, it is effective to measure by switching between multiple coils. In this method, multiple coils are not excited at the same time, so mutual interference does not occur. Furthermore, by devising the structure, dimensions, arrangement distance, etc. of the probe, it is possible to shorten the switching time. In other words, there are two types of coils that can be used in this method: probe type (inner magnetic type) and pot type (outer magnetic type), but in order to prevent interference in boat fishing, it is necessary to have a magnetic shielding effect on the outside of the core. A probe type with a ring (for example made of copper) is preferred. In addition, the frequency of the current used in such a coil is generally below the resonant frequency of the coil (for example! -10
MHz), but in the case of probe-type coils, in the case of a probe-type coil, if the core diameter is set to 0.5 mm or less, there will be no interference between adjacent coils even if the coils are placed close to each other with a distance of 10 mm or less. It can be measured without Furthermore, if the thickness of the ring surrounding the core of the probe-type coil is adjusted, it can operate at high frequencies of 10 MHz to 30 M112 without interference. Note that even with pot-shaped coils, if the diameter of the coil core was set to 3 mm or less, measurements up to 10111H2 were possible even if the coils were placed close to each other at 10 mm or less.

磁性体めっきは浴槽内を撹拌するためにめっき膜が形成
される基板側に検出用のコイルを配置することは構造上
容易ではない。そこで上記の方法を実施する装置は、め
っき膜2が形成される基板面の裏側にコイル3を配置す
ることにした。そのようにしても、この方法によれば厚
さ数mmのセラミック基板、ガラス基板上に形成される
めっき膜の膜厚に対応したインピーダンス変化が測定可
能であった。
In magnetic plating, it is structurally difficult to arrange a detection coil on the substrate side on which the plating film is formed because the inside of the bathtub is stirred. Therefore, in the apparatus for carrying out the above method, the coil 3 is arranged on the back side of the substrate surface on which the plating film 2 is formed. Even so, with this method, it was possible to measure impedance changes corresponding to the thickness of a plating film formed on a ceramic substrate or a glass substrate with a thickness of several mm.

第2図は前記本発明者による従来の測定方法を実施する
ための測定装置を示す。基板9のめっき膜2の面の反対
側近傍にコイル10〜12を配置し、各々のコイルは駆
動用の交流電流をふりわけ、検出出力を切り換える走査
装置14を介してインピーダンス測定装置15に接続さ
れている。
FIG. 2 shows a measuring device for carrying out the conventional measuring method by the inventor. Coils 10 to 12 are arranged near the opposite side of the plated film 2 of the substrate 9, and each coil is connected to an impedance measuring device 15 via a scanning device 14 that distributes driving alternating current and switches the detection output. ing.

各々のコイル10−12は基板9を固定する治具21に
密閉されており、めっき液16が浸透しないようになっ
ている。その他のめつき槽1の構造は本発明に関係しな
いので説明を省略する。
Each coil 10-12 is hermetically sealed in a jig 21 that fixes the substrate 9, so that the plating solution 16 does not penetrate. The other structures of the plating tank 1 are not related to the present invention, and therefore their explanation will be omitted.

インピーダンス測定装置15で測定された各々のデータ
はデータ・レジスタ18に入力され、比較装置19によ
って膜厚範囲設定装置17に設定された値と比較され、
条件が満たされれば、めっき電源20を停止するように
なっている。
Each data measured by the impedance measurement device 15 is input to the data register 18, and is compared with the value set in the film thickness range setting device 17 by the comparison device 19,
If the conditions are met, the plating power source 20 is stopped.

パーマロイめっき浴において、Ni2+、Fe2+イオ
ン濃度、浴温度、めっき電流密度をある範囲にして(こ
れらの条件は、本発明には関係しないので説明を省略す
る)めっきを行い、コイルに印加する電流の周波数を6
 Mfhに設定した場合の3つのコイルから得られたデ
ータをめっき時間と膜厚に関して示したグラフを第3図
に示す。図において横軸はめっき時間、縦軸はめっき膜
厚を示し、aはコイル11からのデータ、bはコイル1
0からのデータ、Cはコイル12からのデータである。
Plating is performed in a permalloy plating bath with Ni2+, Fe2+ ion concentration, bath temperature, and plating current density within certain ranges (these conditions are not related to the present invention, so their explanations are omitted), and the current applied to the coil is frequency to 6
FIG. 3 is a graph showing the data obtained from the three coils when set to Mfh in terms of plating time and film thickness. In the figure, the horizontal axis shows the plating time, the vertical axis shows the plating film thickness, a is the data from the coil 11, and b is the data from the coil 1.
Data from 0 and C are data from coil 12.

図から、従来の方法によるめっき終了点Aではb及びC
かものデータはめっき膜厚がまだ不十分であることを示
し、すべてのコイルの出力が所定膜厚範囲Gに入ったこ
とを示した時点Bでめっきを終了すると、基板内のめっ
き膜厚は総て設定膜厚範囲G内に入っていることが判る
。この方法によれは、膜厚の計測精度は±0.1μm以
内であった。
From the figure, at the plating end point A using the conventional method, b and C
The data shows that the plating film thickness is still insufficient, and when plating is finished at time B when the output of all coils is within the predetermined film thickness range G, the plating film thickness inside the substrate is It can be seen that all of the film thicknesses are within the set film thickness range G. According to this method, the measurement accuracy of the film thickness was within ±0.1 μm.

第4図は基板9面内のめっき膜の膜厚分布を測定するた
めのコイルの配置の一例を示す。2インチ角の基板9の
場合、該基板の裏側にコイル22〜30を20ミリ間隔
の格子状に9個配置し、各々のコイルを第2図と同様に
走査装置14を介してインピーダンス測定装置15に接
続することによって、該基板上のめっき膜厚の分布を必
要十分な精度で測定出来ることがわかった。このように
してコイル22〜30の各々のインピーダンス変化を測
定することにより、基板全体のめっき膜の膜厚が規格内
に収まる。
FIG. 4 shows an example of the arrangement of coils for measuring the film thickness distribution of the plating film within the plane of the substrate 9. FIG. In the case of a 2-inch square substrate 9, nine coils 22 to 30 are arranged in a grid pattern at 20 mm intervals on the back side of the substrate, and each coil is connected to an impedance measuring device via a scanning device 14 as shown in FIG. 15, it was found that the distribution of the plating film thickness on the substrate could be measured with sufficient accuracy. By measuring the change in impedance of each of the coils 22 to 30 in this way, the thickness of the plating film on the entire substrate falls within the standard.

ところで、前記第2図に示すような従来の測定装置にお
いては、複数のコイルによってめっき中の膜厚分布を測
定してめっき終了点を把握することは出来たが、めっき
膜厚の成長における変化のばらつきを制御することが出
来なかった。従って、第3図に示すように、膜厚の成長
のばらつき(asb、cの上下方向の隔たり)によって
、全体の処理時間か長くなり、かつ617′l1幅を狭
くして膜厚分布をより小さくすることが出来なかった。
By the way, in the conventional measuring device as shown in Fig. 2, it was possible to determine the plating end point by measuring the film thickness distribution during plating using multiple coils, but it was possible to grasp the plating end point. It was not possible to control the variation in Therefore, as shown in Fig. 3, the overall processing time becomes longer due to variations in film thickness growth (vertical distance between asb and c), and the film thickness distribution is further improved by narrowing the 617'l1 width. I couldn't make it smaller.

(ハ)発明の目的 本発明の目的は、上記のようなめっき方法の欠点を改良
し、膜厚と膜厚分布を測定しながらめっきを行って、特
に大型の基板において所定の膜厚で膜厚分布の均一な磁
性薄膜をより以上に精度よく得る方法とそのための装置
を提供することを目的とする。
(c) Purpose of the Invention The purpose of the present invention is to improve the shortcomings of the plating method as described above, perform plating while measuring the film thickness and film thickness distribution, and achieve a film with a predetermined thickness, especially on large substrates. The object of the present invention is to provide a method for obtaining a magnetic thin film with a uniform thickness distribution with even higher precision, and an apparatus therefor.

(ニ)発明の構成 本発明によれば、基板に対向する電極(陽極)を、前記
の複数のコイルに対応して分割し、その全体面積が基板
面を含む電極(陰極)に等しくなるように配置する。す
なわち、一つのコイルに対してそのコイル位置の基板に
対向した陽極の一部分(分割した陽極)が対応するよう
にする。
(D) Structure of the Invention According to the present invention, the electrode (anode) facing the substrate is divided corresponding to the plurality of coils, so that the entire area is equal to that of the electrode (cathode) including the substrate surface. Place it in That is, a portion of the anode (divided anode) facing the substrate at the coil position corresponds to one coil.

そして、各々のコイルから検出される出力を所定膜厚分
布範囲(例えば、中心部と周辺部の差が0.5μm以内
)と比較する。その結果、範囲外であると判定されたコ
イル位置に対応した部分の陽極の電流を、範囲を下回る
場合は現状より多く流し、範囲を上回る場合は少なく流
すように制御することにより、所定膜厚分布を常にみた
しながら、めっきを行うことが可能になる。
Then, the output detected from each coil is compared with a predetermined film thickness distribution range (for example, the difference between the center and the periphery is within 0.5 μm). As a result, the anode current of the part corresponding to the coil position determined to be out of range is controlled so that if it is below the range, it flows more than the current current, and if it exceeds the range, it flows less, so that the predetermined film thickness It becomes possible to perform plating while always satisfying the distribution.

−例として、範囲を上回るときには、所定電流の20%
程度少なく流し、逆に範囲を下回るときには所定電流の
20%程度多く流す制御を行うと均一な膜厚分布を有す
るめっき膜を得ることができた。ただし、これらの条件
はめつき浴及びめっき条件に大きく左右されるので各々
の場合に適切な範囲か存在する。
- For example, when exceeding the range, 20% of the specified current
By controlling the flow to a certain extent, and conversely by flowing about 20% more than the predetermined current when the current was below the specified range, a plated film with a uniform thickness distribution could be obtained. However, since these conditions largely depend on the plating bath and plating conditions, there is an appropriate range for each case.

(ホ)実施例 第5図は本発明による方法を実施するための装置を示す
。図において浴槽等は第2図の物と同様である。陽極5
〜7は各々めっき電源20−1〜20−3に接続されて
おり、コイル10に対して陽極5、コイル11に対して
陽極6、コイル12に対して陽極7を各々対応させて、
制御系が組まれている。各々のコイルからの検出出力は
インピーダンス測定装置15を介して、データレジスタ
18に入力される。ここで膜厚範囲設定装置17に設定
された値と比較され、データが範囲を外れたコイルに対
応した陽極の電源に指令を送り、めっき電流を個別に制
御するようになっている。この装置を用いてめっきを行
い、コイルに印加する電流の周波数を6 M Hzに設
定した場合の3個のコイルから得られたデータを第6図
に示す。aはコイル11からのデータ、bはコイル10
からのデ一タ、Cはコイル12からのデータである。図
から判るように、第5図の制御系を用いるとa−Cの膜
厚は相互に近接しており、めっき時間Cで所定膜厚範囲
G内に入ることがわかる。これに対して、従来の方法に
よるとコイル12のデータは第5図のC′になり、めっ
き時間Cでは所定膜厚範囲G内に入らない。又、このよ
うな構成にすることにより、所定膜厚範囲Gの幅を狭く
出来ることも判る。
(E) Embodiment FIG. 5 shows an apparatus for carrying out the method according to the present invention. In the figure, the bathtub etc. are the same as those in FIG. 2. Anode 5
~7 are connected to the plating power supplies 20-1 to 20-3, respectively, and the anode 5 corresponds to the coil 10, the anode 6 corresponds to the coil 11, and the anode 7 corresponds to the coil 12.
A control system is included. The detection output from each coil is input to the data register 18 via the impedance measurement device 15. Here, the data is compared with the value set in the film thickness range setting device 17, and a command is sent to the power source of the anode corresponding to the coil whose data falls outside the range, thereby individually controlling the plating current. FIG. 6 shows data obtained from three coils when plating was performed using this apparatus and the frequency of the current applied to the coils was set to 6 MHz. a is data from coil 11, b is data from coil 10
C is the data from the coil 12. As can be seen from the figure, when the control system of FIG. 5 is used, the film thicknesses a-C are close to each other, and it can be seen that the plating time C falls within the predetermined film thickness range G. On the other hand, according to the conventional method, the data of the coil 12 becomes C' in FIG. 5, and the plating time C does not fall within the predetermined film thickness range G. It can also be seen that by adopting such a configuration, the width of the predetermined film thickness range G can be narrowed.

第7図は、第4図のように配置したコイルに対応して分
割した陽極の例を示す。陽極31〜39はコイル22〜
30に各々対応する位置にくるように分割されている。
FIG. 7 shows an example of an anode divided corresponding to the coils arranged as shown in FIG. Anodes 31-39 are coils 22-
It is divided into positions corresponding to 30.

このようにすれば、膜厚分布の均一なめつき膜の制御を
行うことができる。
In this way, it is possible to control the plating film with a uniform film thickness distribution.

2インチ角の基板9に対してコイル22〜30を20ミ
リ間隔の格子状に9個配置し、対向する陽極31〜39
(各々20ミリ角の大きさ)をコイル22〜30に対応
して配置させ、第5図に示した装置、制御系を用いてめ
っきを行えば、基板上のめっき膜厚分布を必要十分な制
度で測定制御出来ることがわかった。
Nine coils 22 to 30 are arranged in a lattice shape at 20 mm intervals on a 2 inch square substrate 9, and opposing anodes 31 to 39
(each 20 mm square) are arranged corresponding to the coils 22 to 30, and plating is performed using the apparatus and control system shown in Figure 5 to achieve the necessary and sufficient plating film thickness distribution on the substrate. It was found that measurement can be controlled systematically.

(へ)発明の効果 以上に説明したような方法及び装置を用いることによっ
て、磁性体めっきの膜厚分布を監視しながらめっきを行
い、めっき基板全体に所定の膜厚及び膜厚分布を得られ
るので、高品質の磁性体めっき基板の高歩留りの製造が
可能になった。
(f) Effects of the invention By using the method and apparatus described above, plating can be performed while monitoring the film thickness distribution of magnetic plating, and a predetermined film thickness and film thickness distribution can be obtained over the entire plating substrate. This has made it possible to manufacture high-quality magnetic plated substrates at high yields.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明で用いるめっき膜厚の測定方法を示す図
。 第2図は従来のめっき膜厚の測定装置を示す図。 第3図は従来のめっき膜厚の測定例と終点制御を示すグ
ラフ。 第4図は本発明で用いるめっき膜厚測定装置のコイルの
配置例を示す図。 第5図は本発明によるめっき膜厚の測定及び制御装置を
示す図。 第6図は本発明によるめっき膜厚の測定例と膜厚分布制
御及び終点制御を示すグラフ。 第7図は本発明によるめっき膜厚測定装置の陽極の配置
例を示す図。 1・浴槽、        2:めつき膜、3:コイル
、       5〜7:陽極、9:基板、 10〜12:コイル、   14:走査装置、15:イ
ンピーダンス測定装置、 17:膜厚範囲設定装置、 18:データ・レジスタ、 19:比較装置、     20:めっき電源、20−
1〜20−3:めつき電源
FIG. 1 is a diagram showing a method for measuring plating film thickness used in the present invention. FIG. 2 is a diagram showing a conventional plating film thickness measuring device. Figure 3 is a graph showing an example of conventional plating film thickness measurement and end point control. FIG. 4 is a diagram showing an example of the arrangement of coils of the plating film thickness measuring device used in the present invention. FIG. 5 is a diagram showing a plating film thickness measurement and control device according to the present invention. FIG. 6 is a graph showing an example of measurement of plating film thickness, film thickness distribution control, and end point control according to the present invention. FIG. 7 is a diagram showing an example of the arrangement of anodes of the plating film thickness measuring device according to the present invention. 1. Bathtub, 2: Plating film, 3: Coil, 5-7: Anode, 9: Substrate, 10-12: Coil, 14: Scanning device, 15: Impedance measuring device, 17: Film thickness range setting device, 18 : data register, 19: comparator, 20: plating power supply, 20-
1 to 20-3: Metsuki power supply

Claims (2)

【特許請求の範囲】[Claims] (1)磁場中における磁性体薄膜めっきにおいて、基板
のめっき膜が形成される面の近傍に複数個のコイルを配
置し、該コイルを高周波駆動してそのインピーダンスの
変化をコイル毎に切り換えて測定することにより、めっ
き膜の膜厚及び膜厚分布を監視すると共に、その結果に
従って前記基板に対向した電極の一部あるいは全面に流
れる電流を変化させて、めっきの膜厚及び膜厚分布を制
御することを特徴とする電気めっき方法。
(1) In magnetic thin film plating in a magnetic field, multiple coils are placed near the surface of the substrate on which the plating film will be formed, and the coils are driven at high frequency and the change in impedance is measured by switching for each coil. By monitoring the thickness and thickness distribution of the plating film, and controlling the thickness and thickness distribution of the plating by changing the current flowing through a part or the entire surface of the electrode facing the substrate according to the results. An electroplating method characterized by:
(2)磁場中において磁性体薄膜をめっきする装置にお
いて、めっきされる基板のめっき面の近傍に設置された
複数のコイルと、該コイルを駆動するための高周波電流
発生装置と、前記コイルのインピーダンスを測定する装
置と、前記高周波電流を前記複数のコイルに分配するた
めに前記高周波電流発生装置を前記コイルに選択的に接
続する切り換え装置と、前記複数のコイルのインピーダ
ンスを測定するために前記インピーダンス測定装置を前
記コイルに選択的に接続する切り換え装置と、前記イン
ピーダンス測定装置による測定結果によりめっき膜の膜
厚及び膜厚分布を監視する装置と、その監視結果に従っ
てめっき電流を制御する装置と、前記基板に対するめっ
き電流の分布を一部ないし全面に対して変化可能な対向
電極とからなる、請求項1に記載の方法を実施するため
の装置。
(2) An apparatus for plating a magnetic thin film in a magnetic field, including a plurality of coils installed near the plating surface of a substrate to be plated, a high-frequency current generator for driving the coils, and an impedance of the coils. a switching device for selectively connecting the high frequency current generator to the coils in order to distribute the high frequency current to the plurality of coils, and a switching device for measuring the impedance of the plurality of coils. a switching device that selectively connects a measuring device to the coil; a device that monitors the thickness and thickness distribution of the plating film based on the measurement results of the impedance measuring device; and a device that controls the plating current according to the monitoring results; 2. An apparatus for carrying out the method according to claim 1, comprising a counter electrode that can change the distribution of plating current with respect to the substrate partially or over the entire surface.
JP22204188A 1988-09-05 1988-09-05 Method and apparatus for electroplating Pending JPH0270099A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22204188A JPH0270099A (en) 1988-09-05 1988-09-05 Method and apparatus for electroplating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22204188A JPH0270099A (en) 1988-09-05 1988-09-05 Method and apparatus for electroplating

Publications (1)

Publication Number Publication Date
JPH0270099A true JPH0270099A (en) 1990-03-08

Family

ID=16776160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22204188A Pending JPH0270099A (en) 1988-09-05 1988-09-05 Method and apparatus for electroplating

Country Status (1)

Country Link
JP (1) JPH0270099A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02200800A (en) * 1989-01-30 1990-08-09 Nec Corp Method for adjusting current distribution for electroplating
JPH04238281A (en) * 1991-01-21 1992-08-26 Seiko Instr Inc Electrochemical reaction measuring device
JP2008014699A (en) * 2006-07-04 2008-01-24 Tokyo Institute Of Technology Film thickness measuring method and film thickness measuring apparatus in electrolytic treatment
JP2009039574A (en) * 2008-11-25 2009-02-26 Olympus Corp Capsule endoscope system
US7905827B2 (en) 2002-04-08 2011-03-15 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US7914657B2 (en) 2005-12-01 2011-03-29 Hitachi Global Storage Technologies, Netherlands B.V. Controlling the thickness of wafers during the electroplating process

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02200800A (en) * 1989-01-30 1990-08-09 Nec Corp Method for adjusting current distribution for electroplating
JPH04238281A (en) * 1991-01-21 1992-08-26 Seiko Instr Inc Electrochemical reaction measuring device
US7905827B2 (en) 2002-04-08 2011-03-15 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US8033989B2 (en) 2002-04-08 2011-10-11 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US8062210B2 (en) 2002-04-08 2011-11-22 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US8419629B2 (en) 2002-04-08 2013-04-16 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US8753265B2 (en) 2002-04-08 2014-06-17 Olympus Corporation Encapsulated endoscope system in which endoscope moves in lumen by itself and rotation of image of region to be observed is ceased
US7914657B2 (en) 2005-12-01 2011-03-29 Hitachi Global Storage Technologies, Netherlands B.V. Controlling the thickness of wafers during the electroplating process
JP2008014699A (en) * 2006-07-04 2008-01-24 Tokyo Institute Of Technology Film thickness measuring method and film thickness measuring apparatus in electrolytic treatment
JP2009039574A (en) * 2008-11-25 2009-02-26 Olympus Corp Capsule endoscope system

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