JPH0281402A - Semiconductor porcelain having positive temperature coefficient - Google Patents
Semiconductor porcelain having positive temperature coefficientInfo
- Publication number
- JPH0281402A JPH0281402A JP23335388A JP23335388A JPH0281402A JP H0281402 A JPH0281402 A JP H0281402A JP 23335388 A JP23335388 A JP 23335388A JP 23335388 A JP23335388 A JP 23335388A JP H0281402 A JPH0281402 A JP H0281402A
- Authority
- JP
- Japan
- Prior art keywords
- porcelain
- melting point
- barium titanate
- low melting
- semiconductor porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052573 porcelain Inorganic materials 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000002844 melting Methods 0.000 claims abstract description 35
- 230000008018 melting Effects 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 20
- 230000007704 transition Effects 0.000 claims abstract description 18
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 2
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 claims 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000203 mixture Substances 0.000 abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000001747 exhibiting effect Effects 0.000 abstract description 4
- 230000002093 peripheral effect Effects 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical group O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910000018 strontium carbonate Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、著しく大きな正の温度係数と著しく低い常温
での比抵抗を有し、比較的大きな容量の回路に連設され
、温度保障、過電流保護、加熱等のために用いられる半
導体磁器に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention has a significantly large positive temperature coefficient and a significantly low specific resistance at room temperature, and is connected to a relatively large capacity circuit to provide temperature guarantee and It relates to semiconductor porcelain used for overcurrent protection, heating, etc.
〔従来技術及び発明が解決しようとする問題点〕従来、
著しく大きな正の温度特性を有する半導体磁器としてチ
タン酸バリウム（ＢａＴｉ０３）にＬａ。[Prior art and problems to be solved by the invention] Conventionally,
La is used in barium titanate (BaTi03) as a semiconductor porcelain that has extremely large positive temperature characteristics.
Ｓｍ、Ｃｅその他の酸化物を添加し半導体化きせた磁器
が知られている。微量の酸化物を添加したチタン酸バリ
ウムが著しく大きな正の温度係数を有する理由は結晶粒
界のショットキー隙壁が変移点以下においては粒界の強
誘電性のため低くなっているが、変移点以上においては
誘電率が低下するためショットキー隙壁が高くなり、抵
抗の急増が起こると考えられている。Porcelain that has been made into a semiconductor by adding oxides such as Sm and Ce is known. The reason why barium titanate with a small amount of oxide added has a significantly large positive temperature coefficient is that the Schottky gap wall at the grain boundary is low below the transition point due to the ferroelectricity of the grain boundary. It is believed that above this point, the Schottky gap wall becomes high due to a decrease in the dielectric constant, causing a rapid increase in resistance.
また、チタン酸バリウム系半導体磁器の変移点は、通常
１００〜１２０℃であるがこの変移点は添加する酸化物
の種類、量により変化し例えばＰｂ１ｉｋ化物の場合添
加量に応じて高温側に変化し、Ｓ４化物の場合添加量に
応じて低温側に変化することが知られている。In addition, the transition point of barium titanate-based semiconductor ceramics is usually 100 to 120°C, but this transition point changes depending on the type and amount of oxide added. For example, in the case of Pb1ik compound, it changes to the high temperature side depending on the amount added. However, in the case of S4 compounds, it is known that the temperature changes to the lower temperature side depending on the amount added.
この様な著しく大きな正の温度係数を有する半導体磁器
を限流素子等に用いる場合、常温での比抵抗Ｒ２５がで
きるだけ小さく、かつ抵抗変化率（常温での比抵抗Ｒ２
５と変移点以上の温度での最大抵抗値Ｒｍａｘとの変化
の割合）ができるだけ大きいことが望ましいが、Ｒ２５
は１０Ω、４度が限界であり、またこの場合の抵抗変化
率は１０２〜１０３が限界であった。When semiconductor porcelain having such a significantly large positive temperature coefficient is used for current limiting elements, etc., the specific resistance R25 at room temperature should be as small as possible, and the rate of change in resistance (specific resistance R2 at room temperature) should be as small as possible.
It is desirable that the ratio of change between R25 and the maximum resistance value Rmax at a temperature above the transition point is as large as possible.
The limit was 10Ω and 4 degrees, and the limit of the resistance change rate in this case was 102 to 103.
最近、この目的の為に、チタン酸バリウム粉体と金属粉
体との混合物を不活性ガス中で焼結後酸化処理する方法
（特開昭５９−１０１８０１等）、多孔質のチタン酸バ
リウム焼結体に金属を含浸させる方法（特開昭６ｌ−３
６９０１） 、導電性セラミック粒子付近にチタン酸バ
リウム粒子を介在させる方法（特開昭６１−２１２００
１ ）などが提案されている。Recently, for this purpose, a method has been developed in which a mixture of barium titanate powder and metal powder is oxidized after sintering in an inert gas (Japanese Patent Application Laid-Open No. 59-101801, etc.). Method of impregnating a solid with metal (Japanese Patent Application Laid-Open No. 61-3
6901), method of interposing barium titanate particles near conductive ceramic particles (JP-A-61-21200)
1) etc. have been proposed.
これらの場合、常温での比抵抗１０−１〜数Ω９口を有
し、抵抗変化率１０２〜１０３を得ているが、不活性ガ
ス焼結後、酸化処理するとか、多孔質内に金属を含浸す
るとか、セラミック粒子付近にチタン酸バリウム微粒子
を介在させるなど特殊技術または微妙なフントロールが
必要であり、生産上困難な点がある。In these cases, the resistivity at room temperature is 10-1 to several Ω9, and the rate of change in resistance is 102 to 103. It requires special techniques such as impregnation or interposition of barium titanate fine particles near the ceramic particles, or delicate control, which poses production difficulties.
本発明は上述した問題に鑑みてなされたものでその目的
とするところは、常温での比抵抗をできるだけ小きくか
つ抵抗変化率の大きな正の温度係数を有する半導体磁器
を、微妙なフントロールや特殊技術を用いることなく一
般的な方法で得ることである。The present invention was made in view of the above-mentioned problems, and its purpose is to reduce the specific resistance at room temperature as much as possible, and to produce semiconductor porcelain having a large positive temperature coefficient and a large resistance change rate. It is obtained by a general method without using special technology.
本発明は常温での比抵抗をできるだけ小さく、かつ抵抗
変化率の大きな特性を得る為に、チタン酸バリウム系半
導体磁器の内部に低融、ζ金属を封入することにより、
常温での比抵抗を小さくし、変移点以上でのチタン酸バ
リウム系半導体磁器の抵抗増加に低融点金属が溶解して
抵抗が増加することを加えることにより、抵抗変化率を
増加させることを特徴とするものである。In the present invention, in order to reduce the specific resistance at room temperature as much as possible and obtain characteristics with a large resistance change rate, by sealing a low-melting, ζ metal inside barium titanate-based semiconductor porcelain,
It is characterized by reducing the specific resistance at room temperature and increasing the rate of change in resistance by adding the increase in resistance due to melting of the low melting point metal to the increase in resistance of barium titanate semiconductor porcelain above the transition point. That is.
以下本発明の代表的な構造のものにつき第１回加した組
成を原料とし、従来通りの窯業的手法で作成された比較
的厚さのある中心に円形断面の凹部を備えた円柱容器状
の本体磁器（３）の外周側面を除いた全面に、オーム性
接触を示す電極（５）例えば銀ペーストが塗布され、４
５０℃雰囲気中で３０分間加熱焼付けされてなる本体（
１〉と、上記本体磁器（３）と同組成、同製法から成る
薄い円板状の蓋体磁器（４）の外周側面を除いた全面に
、本体磁器（３）と同様にオーム性接触を示す電極（５
）が形成されて成る蓋体（２）と、上記本体磁器（３）
および蓋体磁器（４）の変移点である１２０℃とほぼ等
しい融点を持つ低融点金属（７）例えば低温ハンダとか
ら成り本体〈１）の凹部にその容積のほぼ８割まで低融
点金属（７）を入れ、該凹部を形成する上端面と前記蓋
体（２）とを導電性接着剤（６）例えば銀ペーストで接
着する。The following is a comparatively thick cylindrical container with a circular cross-section recess in the center, made using the composition added in the first step for a typical structure of the present invention as a raw material and using a conventional ceramic method. An electrode (5) exhibiting ohmic contact, for example, silver paste, is applied to the entire surface of the porcelain main body (3) except for the outer peripheral side surface, and
The main body is baked in a 50℃ atmosphere for 30 minutes (
1> and the thin disc-shaped cover porcelain (4) made of the same composition and manufacturing method as the main body porcelain (3), and made ohmic contact on the entire surface except for the outer peripheral side surface in the same way as the main body porcelain (3). The electrode shown (5
), and the porcelain main body (3).
and a low melting point metal (7) having a melting point almost equal to 120°C, which is the transition point of the lid porcelain (4), for example, low temperature solder. 7), and the upper end surface forming the recess is bonded to the lid (2) using a conductive adhesive (6) such as silver paste.
このように組み立てられた一つの正の温度係数を有する
半導体磁器の温度と比抵抗の関係を示したのが第２図で
あり、その数値は、（表−１）−１に示すとうり常温比
抵抗は３．８０Ω、Ｑｌｌを示し、従来品の７．６６Ω
、ｃｍのに程度の小さい値であり、かつ抵抗変化率も従
来品の１．８０刈０３に対して本発明は２．５７Ｘ１０
３とわずかであるが増大しており、本発明の正の温度係
数を有するる半導体磁器は、良好な抵抗温度特性を有す
るこがわかる。Figure 2 shows the relationship between the temperature and resistivity of the semiconductor porcelain with one positive temperature coefficient assembled in this way, and the numerical values are as shown in (Table 1)-1 at room temperature. The specific resistance is 3.80Ω, Qll, compared to 7.66Ω of the conventional product.
, cm, and the resistance change rate of the present invention is 2.57X10, compared to 1.80 of the conventional product.
3, which shows that the semiconductor porcelain of the present invention having a positive temperature coefficient has good resistance-temperature characteristics.
また、上記本体（１）、蓋体（２）を形成する本体磁器
〈３）、蓋体磁器（４〉として、チタン酸バリウムの１
−１％を酸化鉛で置換したチタン酸バリウム−チタン酸
鉛固体溶体に、酸化ランタン０．２５１１）１％添加し
た組成を従来通りの窯業的手法で作成した磁器を用いて
もよい、構造は前記要領に準じており、チタン酸バリウ
ム−チタン酸鉛固溶体に、酸化ランタン０．２１１１０
１％添加したチタン酸バリウム半導体磁器の変移点であ
る１６０″Ｃとほぼ等しい融点を持つ低融点金属（７）
例えば低温ハンダを本体（１）の凹部内に入れ前述した
手法にて封入する。この正の温度係数を有する半導体磁
器の温度と比抵抗の関係を示したのが第３図であり、常
温での比抵抗値及び抵抗変化率の値は、（表−１）−２
に示す通りそれぞれ９，７４Ω、（Ｊ、２．１４Ｘ１０
”であり、従来品に比べて常温での比抵抗値はに程度の
小さい値であり、抵抗変化率もわずか増大しており、良
好な抵抗温度特性を示している。In addition, as the main body porcelain <3) and the lid porcelain (4> forming the main body (1) and the lid (2), 1 of barium titanate is used.
-1% barium titanate-lead titanate solid solution with 0.2511% lanthanum oxide added by lead oxide may be used, and porcelain made using conventional ceramic methods may be used. According to the above procedure, 0.21110 lanthanum oxide was added to the barium titanate-lead titanate solid solution.
A low melting point metal (7) with a melting point almost equal to 160"C, which is the transition point of barium titanate semiconductor porcelain with 1% addition.
For example, low-temperature solder is placed in the recess of the main body (1) and sealed using the method described above. Figure 3 shows the relationship between the temperature and specific resistance of semiconductor porcelain having a positive temperature coefficient, and the specific resistance value and resistance change rate at room temperature are (Table 1) -2
9 and 74Ω, (J, 2.14X10
”, the specific resistance value at room temperature is slightly smaller than that of the conventional product, and the resistance change rate is also slightly increased, indicating good resistance-temperature characteristics.
また、本体（１）蓋体（２）を形成する本体磁器（３）
蓋体磁器（４）として、チタン酸バリウムの１−１％を
炭酸ストロンチウムで置換したチタン酸バリウム−チタ
ン酸ストロンチウム固溶体に、酸化ランタン０４ω１％
添加した組成を従来通りの窯業的手法で作成した磁器を
用いてもよい、チタン酸バリウム−チタン酸ストロンチ
ウム固溶体に酸化ランタン０．２ｍｏ１％添加した磁器
の変移点である８０℃とほぼ等しい融点を持つ低融点金
属（７）例えば低温ハンダを本体（１）の凹部内に入れ
前述した手法にて封入する。この正の温度係数を有する
半導体磁器の温度と比抵抗の関係を示してのが第４図で
あり、（表−１）−３に示す通り、常温での比抵抗値５
．９０Ω、Ｃｆｆ１、抵抗変化率２．２３×１０３であ
り、従来品に比べて常温での比抵抗値はに程度の小さい
値であり、抵抗変化率もわずかに増大しており、良好な
抵抗温度特性を示している。In addition, the main body porcelain (3) forming the main body (1) and the lid body (2)
As the lid porcelain (4), lanthanum oxide 04ω1% is added to a barium titanate-strontium titanate solid solution in which 1-1% of barium titanate is replaced with strontium carbonate.
It is also possible to use porcelain made with the added composition using conventional ceramic methods. A low melting point metal (7) such as low temperature solder is placed in the recess of the main body (1) and sealed using the method described above. Figure 4 shows the relationship between temperature and resistivity of semiconductor porcelain having a positive temperature coefficient, and as shown in (Table 1)-3, the resistivity at room temperature is 5.
．． 90 Ω, Cff1, resistance change rate 2.23 x 103, the specific resistance value at room temperature is a very small value compared to the conventional product, and the resistance change rate is also slightly increased, so it has a good resistance temperature. It shows the characteristics.
以上は本発明の一実施例を示したが、本体（１）蓋体（
２）に用いる本体磁器（３）蓋体磁器（４）は、変移点
、比抵抗値の選択の為に、従来から検討されている種々
の添加物を添加したチタン酸バリウム系半導体磁器を用
いてもよい。また、本体（１）蓋体（２）に金属と複合
化したチタン酸バリウム系半導体磁器や金属導電性を有
するセラミック粒子の表面及び粒界にチタン酸バリウム
微粒子層を介在させた磁器を用いてもよいし、３価の金
属イオンを添加したｖ２０３を用いてもよい。Although one embodiment of the present invention has been described above, the main body (1), the lid body (
The body porcelain (3) and lid porcelain (4) used in 2) are made of barium titanate-based semiconductor porcelain to which various additives have been added, in order to select the transition point and specific resistance value. It's okay. In addition, the main body (1) and the lid (2) are made of barium titanate-based semiconductor porcelain composited with metal or porcelain in which a layer of barium titanate fine particles is interposed on the surface and grain boundaries of ceramic particles having metal conductivity. Alternatively, v203 added with trivalent metal ions may be used.
また、本体（１）蓋体（２）の構造については、第５図
に示す様に、中心に円形断面の凹部を備えた円柱容器状
半導体磁器（１）＜２）の各々の凹部を向い合わせた構
造でもよいし、第６図に示す様に、二つの円板状半導体
磁器（２）（２）により、円筒形の半導体磁器の上下面
に蓋をする構造でもよい、さらに上記本体く１）蓋体（
２）の形状は円柱状だけに限らず多角柱の形をとっても
よい。Regarding the structure of the main body (1) and the lid (2), as shown in Fig. 5, the cylindrical container-shaped semiconductor porcelain (1) has a recess with a circular cross section in the center. The structure may be such that the two disc-shaped semiconductor porcelains (2) (2) are combined to cover the upper and lower surfaces of the cylindrical semiconductor porcelain, as shown in FIG. 1) Lid (
The shape of 2) is not limited to a cylindrical shape, but may also be a polygonal prism.
また、本体（１）蓋体（２）の中に封入する低融点金属
（７）は、本体（１）の凹部の容積の大割に限らない。Furthermore, the low melting point metal (7) sealed in the lid (2) of the main body (1) is not limited to a large percentage of the volume of the recess of the main body (1).
封入する低融点金属（７）の量を選ぶことにより、本発
明の正の温度係数を有する半導体磁器の常温での比抵抗
値及び抵抗変化率を変えることができる。By selecting the amount of the low melting point metal (7) to be enclosed, the specific resistance value and rate of change in resistance at room temperature of the semiconductor porcelain having a positive temperature coefficient of the present invention can be changed.
さらに、本体（１）蓋体（２）にて形成される内部空間
に封入する低融５魚金属（７）は、本体（１〉蓋体（２
）を形成する本体磁器（３）、蓋体磁器（４）の変移点
より高い場合の温度と比抵抗の関係を示したのが第７に
３であり、低い場合の温度と比抵抗の関係を示したのが
第８図である。これらは、両方とも二つの変移点を持つ
形となる。Furthermore, the low melting metal (7) sealed in the internal space formed by the main body (1) and the lid (2) is
) The relationship between the temperature and specific resistance when the temperature is higher than the transition point of the body porcelain (3) and the lid porcelain (4) forming the Figure 8 shows this. Both of these have two transition points.
また、本体（１）蓋体（２）を形成する本体磁器（３）
、蓋体磁器（４）に異なる変移点をもつ組成の磁器を用
いてもよい。In addition, the main body porcelain (3) forming the main body (1) and the lid body (2)
, porcelain having different compositions may be used for the lid porcelain (4).
更に、本体（１）蓋体（２）にて、形成される内部空間
に封入する低融点金属＜７）は一種類に限らない。Furthermore, the number of low melting point metals <7) sealed in the internal space formed by the main body (1) and the lid (2) is not limited to one type.
例えば低融点金属（７）として、本体磁器（３）、蓋体
磁器（４）の変移点１２０℃より低い３０°Ｃの融点を
もつ低融点金属と、変移点と同じ１２０℃の融点をもつ
低融点金属と、変容点より高い２００℃の融点をもつ低
融点金属とをそれぞれ同量封入した場合の温度と比抵抗
の関係を示したのが第９図である。この場合は三つの変
移点を持つ形となり従来見出されていない特性を示すこ
とができる。For example, as the low melting point metal (7), there is a low melting point metal that has a melting point of 30°C, which is lower than the transition point of 120°C for the body porcelain (3) and lid porcelain (4), and a low melting point metal that has a melting point of 120°C, which is the same as the transition point. FIG. 9 shows the relationship between temperature and specific resistance when the same amount of a low melting point metal and a low melting point metal having a melting point of 200° C. higher than the transformation point are sealed. In this case, it has three transition points and can exhibit characteristics that have not been found previously.
以上の様に本体（１）蓋体（２）を形成する本体磁器（
３）、蓋体磁器（４）の組成及び形状、または本体（１
）と蓋体（２）にて形成される内部空間に封入する低融
点金属の種類、量を選択することにより種々の抵抗温度
特性を示す正の温度係数を有する半導体磁器を得ること
ができる。As described above, the main body porcelain (
3), the composition and shape of the lid porcelain (4), or the main body (1)
) and the lid body (2) by selecting the type and amount of the low melting point metal sealed in the internal space formed by the lid (2), it is possible to obtain semiconductor porcelain having a positive temperature coefficient and exhibiting various resistance-temperature characteristics.
以上の様に本発明の正の温度係数を有する半導体磁器で
は、常温での比抵抗を小さくし、かつ抵抗変化率を増大
させることを可能にしている。また、構造的に工夫する
ことより、従来技術に見られる特殊技術、微妙なフント
ロールも必要のない抵抗の関係を示すグラフである。As described above, the semiconductor ceramic having a positive temperature coefficient of the present invention makes it possible to reduce the specific resistance at room temperature and increase the rate of change in resistance. Moreover, this is a graph showing the relationship between resistances, which eliminates the need for special techniques and delicate foot rolls found in the prior art by making structural improvements.
（１）本体 （２）蓋体 （３）本体磁器 （４
）蓋体磁器 （５）電極 （６）導電性接着剤 （
７）低融点金属(1) Main body (2) Lid (3) Main body porcelain (4
) Lid porcelain (5) Electrode (6) Conductive adhesive (
7) Low melting point metal
Claims (4)
磁器の内部空間に、該磁器の変移点とほぼ等しい融点を
もつ低融点金属を封入したことを特徴とする正の温度係
数を有するチタン酸バリウム系半導体磁器。(1) A titanic acid having a positive temperature coefficient, characterized in that a low melting point metal having a melting point approximately equal to the transition point of the porcelain is sealed in the interior space of barium titanate-based semiconductor porcelain having a positive temperature coefficient. Barium-based semiconductor porcelain.
変移点より低い融点をもつものである特許請求の範囲第
１項記載の正の温度係数を有する半導体磁器。(2) A semiconductor porcelain having a positive temperature coefficient according to claim 1, wherein the low melting point metal has a melting point lower than the transition point of the barium titanate semiconductor porcelain.
変移点より高い融点をもつものである特許請求の範囲第
１項記載の正の温度係数を有する半導体磁器。(3) A semiconductor porcelain having a positive temperature coefficient according to claim 1, wherein the low melting point metal has a melting point higher than the transition point of the barium titanate-based semiconductor porcelain.
金属にて構成される特許請求の範囲第１項記載の正の温
度係数を有する半導体磁器。(4) The semiconductor porcelain having a positive temperature coefficient according to claim 1, wherein the low melting point metal is composed of two or more types of low melting point metals having different melting points.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23335388A JPH0281402A (en) | 1988-09-16 | 1988-09-16 | Semiconductor porcelain having positive temperature coefficient |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23335388A JPH0281402A (en) | 1988-09-16 | 1988-09-16 | Semiconductor porcelain having positive temperature coefficient |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0281402A true JPH0281402A (en) | 1990-03-22 |
Family
ID=16953819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23335388A Pending JPH0281402A (en) | 1988-09-16 | 1988-09-16 | Semiconductor porcelain having positive temperature coefficient |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0281402A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146859A (en) * | 1974-05-15 | 1975-11-25 |
-
1988
- 1988-09-16 JP JP23335388A patent/JPH0281402A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50146859A (en) * | 1974-05-15 | 1975-11-25 |
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