JPH028367A - Thin film forming method, thin film forming device, and shield member for sputtering device - Google Patents

Abstract

PURPOSE:To prevent a film adhering to a shielding member from peeling off by detecting the temp. of a shielding member for a target and carrying out temp. control so that the temp. of the shielding member is kept nearly constant at the time of forming a film by means of sputtering. CONSTITUTION:In a sputtering chamber 3, a target body 11 on a backing plate 12 is sputtered and a film 17 is formed on a substrate 14 turning by means of a rotating shaft. At this time, the shielding member is provided with a shielding member-heating unit 20 consisting of a sheathed heater 21 and a sheathed heater-fixing plate 22, and the temp. of the shielding member is measured by means of a thermocouple 24 and sent to a temp. controller 25. The set temp. of this temp. controller 25 is set at a temp. slightly higher than the saturation temp. of the shielding member, and the temp. of the shielding member is held always constant by controlling a current regulator 23. Bey this method; the peeling off of a sputtered film adhering to the shielding member can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a thin film forming method, a thin film forming apparatus, and a sputtering apparatus shield member.

Conventional technology: RatC using power is a method for forming films of metals and insulators.
C sputtering and RF sputtering methods are widely used because they are relatively easy to control. (For example, Shigeru Hayayo et al., "Thin film technology"
S57.12.1 Kyoritsu Publishing P18) Problems to be Solved by the Invention The problems of the prior art will be explained using FIG. 4.

FIG. 4 shows a known load-lock type sputtering apparatus. 1
3 is a sputtering chamber, and 4 is an exit low F'l cock chamber for a substrate 5 on which a film has been formed.

6, 7, 8.9 are known gate valves for passing the substrate. A target 10 is composed of a target body 11 and a hashing play i.12. A shield plate 13 is fixed to the sputtering chamber 3 via a fixing plate 32 to prevent unnecessary discharge and sputtering in a portion not facing the substrate 14. 15 is a variable voltage power supply for applying a negative DC voltage to the target 10. Reference numeral 16 denotes a rotation shaft that holds the substrate 14 and rotates it by means not shown. 17 and 18 are the substrate 14,
This is the film formed in No. 5.

A tube 19 supplies Ar gas to the sputtering chamber 3. Note that, in this figure, publicly known exhaust, leak means, substrate transfer means, film thickness meter, etc. that are normally necessary for sputtering equipment are omitted.

Next, the operation will be explained. Targen) Power to 10 (
The voltage applied has a rectangular waveform as shown in FIG. For example, if the time point when the film formation on the substrate 14 is completed is B, then the next A
In the meantime, the substrate 14 is removed from the rotating shaft 16 and transferred to the outlet load lock chamber 4 through the gate valve 8, and the substrate 2 is transferred to the sputtering chamber 3 through the gate valve 7 and held on the rotating shaft 16. The movement J is performed.

During the following operation, the output of the variable voltage power supply 15 is controlled by known means (not shown) to a low power level at which no film is deposited on the substrates 5 and 2 and the discharge does not stop. Between 8 and B, the output of the variable voltage power supply is controlled to a power level high enough to form a film on the substrate in the same manner as described above. When the film is formed in the cycle as described above, the temperature of the shield plate reaches its upper limit with small fluctuations corresponding to the height of the Subanok power level, as shown in FIG. As the film formation is repeated, the film gradually accumulates on the surface of the shield plate near the opening and eventually peels off. Then, the film falls onto the target surface, and the fallen film pieces receive electric power, causing abnormal discharge and making film formation difficult. The cause of this peeling is
This is because the difference in thermal expansion coefficient between the shield plate and the film causes a difference in the amount of expansion and contraction between the two, that is, distortion due to the rise in temperature of the shield plate over time during film formation (C) shown in Figure 6. It is. As the amount of film deposited increases, the strain also increases.
Peeling is more likely to occur. Furthermore, when the power is turned off after a predetermined cycle of film formation is completed, the temperature of the silt plate rapidly drops and the strain increases dramatically, causing the film to peel off. Therefore, in either case, there was a problem that peeling occurred and stable film formation could not be performed for a long period of time.

Therefore, the present invention solves the above problems by (a) preventing peeling of the film from the shield member. (b) Preventing peeling of the film not only of the shield member but also of the structure between the thin film forming material and the substrate.

The purpose of the present invention is to solve the above problems and obtain a thin film forming device that is stable for a long time.

Means for solving the problems and technical means of the present invention for solving the above problems are (1) Detecting the temperature of the shield member and controlling the temperature of the shield member so that the temperatures of the shield parts are approximately the same. The temperature can be controlled by various means.

(2) Detects the temperature of not only the shield member but also structures between the thin film forming material and the substrate, such as the shutter and the film-forming regulating plate that covers the area around the cuget and extends toward the substrate, and makes sure that the temperatures are approximately the same. The temperature is controlled as follows.

(3) A shield member mainly composed of a conductive material,
The surface to which the sputtered Kuget material is attached is covered with a material that has the same production content as Kugela 1-.

action The effect of this technical means is as follows.

(1) By keeping the temperature of the shield member to which the film is attached constant, it is possible to minimize the difference in the amount of expansion and contraction, that is, the occurrence of strain, due to the difference in thermal expansion coefficient between the shield member or structure and the attached film. This prevents the film from peeling off, eliminates the occurrence of abnormal discharge, and enables stable film formation over a long period of time.

(2) By covering the surface of the shield member to which the sputtered target material adheres as a film with a material whose main components are the same as that of Couget, the adhesion of the film to the shield member is strengthened, and the appearance of the film and shield member is improved. This prevents the film from peeling off by matching the thermal expansion coefficients of the two.

Example An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a diagram showing an embodiment of the present invention, and the same components as in FIG. 4 showing a conventional example are designated by the same numbers.

The differences from the conventional example will be explained below.

Reference numeral 20 denotes a unit for heating the shield member, which is composed of a sheathed heater 21 and a sheathed heater fixing plate 22. 2
3 is a current regulator. Reference numeral 24 denotes a temperature sensing element, such as a thermocouple, for measuring the temperature of the shield plate. 25 is a thermocouple 24
This is a temperature controller that controls the current regulator 23 to keep the temperature of the shield plate constant so that the temperature detected by the shield plate becomes a set value.

Next, the operation will be explained.

For example, if the set temperature of the temperature controller 25 is set a little higher than the saturation temperature of the seal i-plate shown in FIG. It is possible to prevent the difference in thermal expansion from occurring between kJ and S.

Therefore, A: J bonding life can be greatly extended. Furthermore, since the shield plate can be maintained at the set temperature even after the sputtering power is turned off after sputtering is completed, the life of the film to be attached can be further extended.

Next, a second embodiment will be described.

The present invention can be applied not only to sputtering but also to other film forming methods to prevent B from peeling off from a structure. For example, an example of application to vapor deposition will be described with reference to FIG. In FIG. 3, 26 is a Hölscher, 27 is a crucible that stores the evaporation material 28, and evaporation is performed using an electron beam or the like (4 materials 28 are heated and evaporated to form a film on the substrate 29. 30 is a glossy material 28, and 31 is a crucible). Geisha material 28 that was illuminated from 27
This is a film formation regulating plate provided to restrict the deposition range of the film so that the film does not adhere to the inner wall of the herger 26. In this figure, publicly known exhaust and refrigeration means, film thickness gauges, etc. that are normally required for a vapor deposition apparatus are omitted.

In such a configuration, a shutter 30. which is a structure between the vapor deposition material and the substrate. The temperature of the film formation regulating plate 31 is detected by a thermocouple or the like as in the first embodiment, the signal thereof is input to a temperature controller, and the heater is controlled by the signal from the temperature controller to adjust the temperature.

Therefore, the film does not peel off due to temperature changes due to changes in film forming power, that is, differences in thermal expansion coefficients between the structure and the film, and stable film formation for a long period of time becomes possible.

Next, a third embodiment will be described.

The present invention covers the surface of a shield member mainly composed of a conductive material, to which sputtered material is attached, with a material whose main component is the same as that of the target.

Its configuration will be explained using FIG. 2. In Figure 2,
Identical components are indicated by the same numbers. The shield member 13 is
The main body member 13a is made of a conductive material, and the member 13b has the same main component as the target material to which the sputtered Cougette film is attached. Therefore, the adhesion strength is very strong because the main components are the same material, and there is no difference in thermal expansion coefficient, so it is difficult to peel off.Also, 13b, which has a thicker film, can be easily replaced by making it more detachable than +3a. This improves work efficiency.

As described in detail, the present invention has the following effects.

First, by detecting the temperature of the shield member and the structure between the eJ film forming material and the substrate and controlling the temperature, the temperature can be kept almost constant regardless of the application state of the film forming power. This prevents the film from peeling off from the shield member or structure due to temperature changes, increasing the operating rate of the device and improving productivity.

Second, the main component of the shield member is made of a conductive material, and the surface to which the spucked Cougett material adheres is made of a material that has the same main components as the target.As the main components are the same, the adhesion strength is extremely high. resistant, and there is no difference in thermal expansion coefficient, making it difficult to peel off.

In addition, since a member made of the same material as the target is detachably constructed rather than a member made of a conductive material, replacement is easier and workability is improved.

[Brief explanation of the drawing]

FIG. 1 is a front view showing a conceptual diagram of temperature control means using a heater, which is one embodiment of the present invention, FIG. 2 is a partial front view showing a third embodiment, and FIG. Figure 4 is a front view conceptually showing the concept of one embodiment, Figure 4 is a front view conceptually showing the conventional example, Figure 5 is an explanatory diagram of changes in the electric power applied to the cuget, Figure 6 is the conventional example without temperature control. 3 is a graph showing the temperature change of the shield member and the temperature change after temperature adjustment. 3...Sputtering chamber, 10...Target, 11...Target body, 12...
・Hanking plate, 15...variable voltage power supply,
16...Rotating shaft, 14...Substrate, 17
... Membrane, 21 ... Sheathed heater, 1
3... Shield plate, 33... Current regulator, 24... Thermocouple, 25... Temperature controller, 26... Herger, 31... ... Film formation regulating plate, 27 ... Crucible, 28 ... Evaporation material. School ball

Claims (10)

[Claims] (1) A thin film forming method in which the temperature of a shield member of a target is detected in sputter film formation, and the temperature of the shield member is controlled so that the temperature of the shield member is approximately the same. (2) means for supplying an inert gas into the vacuum container, a target provided in the vacuum container, its shield member and substrate, and temperature detection means for detecting the temperature of the shield member;
A means for depositing particles ejected from the target as a film on the substrate, a temperature control means for adjusting the temperature of the shield member, and a signal from the temperature detection means such that the temperatures of the shield member are substantially the same. A thin film forming apparatus comprising a temperature control means for controlling the temperature control means. (3) The thin film forming apparatus according to claim 2, wherein the temperature control means comprises a temperature control member detachably provided in an annular groove provided in the shield member. (4) The thin film forming apparatus according to claim (3), wherein the temperature control member is a sheathed heater. (5) A shield member for a sputtering device, the main body of which is made of a conductive material, and the surface to which sputtered target material is attached is made of a material whose main component is the same as that of the target. (6) The shield member for a sputtering apparatus according to claim (6), further comprising a member having the same main component as the target material, which is detachably provided on the surface of the main body to which the sputtered target material is attached. (7) A method for forming a thin film, in which the temperature of a structure between the thin film material and the substrate is detected, and the temperature of the structure is controlled so that the temperatures of the structures are substantially the same. (8) A substrate provided in a vacuum container, a thin film forming material, a structure between the substrate and the thin film material, a means for atomizing the thin film material and depositing it as a film on the substrate, and a temperature of the structure. 1. A thin film forming apparatus comprising: a temperature control means for adjusting the temperature of the structure; and a temperature control means for controlling the temperature control means so that the temperature of the structure becomes substantially the same based on a signal from the temperature detection means. (9) The thin film forming apparatus according to claim (8), wherein the structure is a shutter. (10) The thin film forming apparatus according to claim 8, wherein the structure is a film formation regulating plate that regulates the flying direction of the fine particles.