JPH028469B2 - - Google Patents
Info
- Publication number
- JPH028469B2 JPH028469B2 JP57156303A JP15630382A JPH028469B2 JP H028469 B2 JPH028469 B2 JP H028469B2 JP 57156303 A JP57156303 A JP 57156303A JP 15630382 A JP15630382 A JP 15630382A JP H028469 B2 JPH028469 B2 JP H028469B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetoresistive
- copper
- nickel
- alloy
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Hall/Mr Elements (AREA)
Description
【発明の詳細な説明】
この発明は、磁気抵抗効果材料を改善し、より
高感度出力が得られるように改良した磁気抵抗効
果素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetoresistive element with improved magnetoresistive material and improved output sensitivity.
異方強磁性磁気抵抗効果を示す物質として、
鉄、ニツケル、コバルト、スズ、アルミニウム等
が知られ、これらの合金が磁気抵抗効果素子の素
材として使用されている。そして、多くはNi−
Co、Ni−Fe等の合金が使用されているものであ
るが、磁界による抵抗値の変化率をより大きなも
のとし、高出力、高感度な磁気センサを構成する
ことが望まれている。 As a material that exhibits anisotropic ferromagnetic magnetoresistance effect,
Iron, nickel, cobalt, tin, aluminum, etc. are known, and alloys of these are used as materials for magnetoresistive elements. And many are Ni-
Although alloys such as Co and Ni-Fe are used, it is desired to increase the rate of change in resistance value due to a magnetic field, and to construct a magnetic sensor with high output and high sensitivity.
この発明は上記のような点に鑑みなされたもの
で、より大きな磁気抵抗効果が得られ、高出力、
高感度の磁気検出が行なわれるようにする磁気抵
抗効果素子を提供しようとするものである。 This invention was made in view of the above points, and it is possible to obtain a larger magnetoresistive effect, high output,
The present invention aims to provide a magnetoresistive element that enables highly sensitive magnetic detection.
以下この発明の一実施例を説明する。第１図お
よび第２図は磁気抵抗効果素子の構成を示すもの
で、シリコン等の絶縁物からなる基板１１の主面
上には、強磁性材料でなる薄膜を蒸着等により形
成し、フオトエツチング等によつて第１および第
２の回路パターン１２ａ，１２ｂが形成される。
この回路パターン１２ａ，１２ｂは、それぞれ直
角の異なる方向に延びる複数の直線部分を折り返
し接続するパターンで構成され、この第１および
第２の回路パターン１２ａ，１２ｂは直列状態に
接続して設定される。そして、この直列された回
路パターンの両端、およびその相互接続部に、そ
れぞれアルミニウム等の導電性金属パターンによ
る電極１３ａ，１３ｂ，１３ｃが形成されるよう
になつている。 An embodiment of this invention will be described below. 1 and 2 show the structure of a magnetoresistive element, in which a thin film made of a ferromagnetic material is formed by vapor deposition or the like on the main surface of a substrate 11 made of an insulator such as silicon, and then photoetched. First and second circuit patterns 12a and 12b are formed by the above steps.
The circuit patterns 12a and 12b are each formed of a pattern in which a plurality of linear portions extending in different directions at right angles are connected in a looped manner, and the first and second circuit patterns 12a and 12b are connected in series. . Electrodes 13a, 13b, and 13c made of conductive metal patterns, such as aluminum, are formed at both ends of the series circuit patterns and at their interconnected portions, respectively.
ここで、上記回路パターン１２ａ，１２ｂを構
成する強磁性材料としては、ニツケル80％および
コバルト20％のNi−Co合金を主体として用いる
もので、このNi−Co合金に対して、不純物とし
て混入する程度に微量の、例えば0.01％の銅を添
加して構成されている。 Here, as the ferromagnetic material constituting the circuit patterns 12a and 12b, a Ni-Co alloy containing 80% nickel and 20% cobalt is mainly used. It is made by adding a very small amount of copper, for example 0.01%.
この、微量の銅を添加することにより、電極導
出のための半田接続部の接触抵抗が下がり、その
オーミツク特性を測定してみると第３図に示すよ
うになる。第３図において破線は銅を添加しない
Ni−Co合金の場合であり、実線は0.01％の銅を
添加した場合の特性を示すもので、略計算通りの
電圧−電流特性が得られることが確認された。 By adding this small amount of copper, the contact resistance of the solder joint for leading out the electrodes is reduced, and the ohmic characteristics are measured as shown in FIG. 3. In Figure 3, the broken line indicates no addition of copper.
This is the case of Ni-Co alloy, and the solid line shows the characteristics when 0.01% copper is added, and it was confirmed that voltage-current characteristics approximately as calculated were obtained.
以上のようにこの発明によれば、例えばNi−
Co等の磁気抵抗材料として通常使用される強磁
性合金に対して、微量の銅を添加することによつ
て、その磁気抵抗出力特性が効果的に改善される
ものであり、磁気センサとしての出力特性、感度
特性が向上されるものである。 As described above, according to the present invention, for example, Ni-
By adding a small amount of copper to a ferromagnetic alloy such as Co, which is commonly used as a magnetoresistive material, its magnetoresistive output characteristics are effectively improved, and the output as a magnetic sensor is improved. The characteristics and sensitivity characteristics are improved.
第１図は磁気抵抗効果素子を説明する平面から
見た構成図、第２図は第１図の−線に対応す
る断面図、第３図は従来の場合とこの発明による
場合のオーミツク特性を比較説明する特性図であ
る。
１１……絶縁物基板、１２ａ，１２ｂ……回路
パターン、１３ａ〜１３ｃ……電極。
Fig. 1 is a configuration diagram seen from a plane to explain the magnetoresistive effect element, Fig. 2 is a sectional view corresponding to the - line in Fig. 1, and Fig. 3 shows ohmic characteristics in the conventional case and in the case according to the present invention. It is a characteristic diagram for comparison explanation. DESCRIPTION OF SYMBOLS 11... Insulator substrate, 12a, 12b... Circuit pattern, 13a-13c... Electrode.
Claims (1)
微量の銅を添加した合金薄膜による磁気抵抗回路
パターンを形成したことを特徴とする磁気抵抗効
果素子。 ２ 上記磁性合金はニツケル80％に対してコバル
ト20％の組み合わせでなり、添加される銅は0.01
％の不純物として混入する程度とした特許請求の
範囲第１項記載の磁気抵抗効果素子。[Claims] 1. For a ferromagnetic alloy mainly composed of nickel,
A magnetoresistive effect element characterized by forming a magnetoresistive circuit pattern using a thin alloy film to which a trace amount of copper is added. 2 The above magnetic alloy is a combination of 80% nickel and 20% cobalt, and the copper added is 0.01%.
% of the magnetoresistive element as claimed in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156303A JPS5946078A (en) | 1982-09-08 | 1982-09-08 | Magnetoresistance effect element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57156303A JPS5946078A (en) | 1982-09-08 | 1982-09-08 | Magnetoresistance effect element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5946078A JPS5946078A (en) | 1984-03-15 |
| JPH028469B2 true JPH028469B2 (en) | 1990-02-23 |
Family
ID=15624855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57156303A Granted JPS5946078A (en) | 1982-09-08 | 1982-09-08 | Magnetoresistance effect element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5946078A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0685746A3 (en) * | 1994-05-30 | 1996-12-04 | Sony Corp | Magnetoresistive effect device having improved thermal resistance. |
-
1982
- 1982-09-08 JP JP57156303A patent/JPS5946078A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5946078A (en) | 1984-03-15 |
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