JPH0285738A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH0285738A JPH0285738A JP23730588A JP23730588A JPH0285738A JP H0285738 A JPH0285738 A JP H0285738A JP 23730588 A JP23730588 A JP 23730588A JP 23730588 A JP23730588 A JP 23730588A JP H0285738 A JPH0285738 A JP H0285738A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- insulating layer
- pressure sensor
- pressure
- base body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は圧力センサに関するもので特に圧力センサのダ
イアフラムに関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a pressure sensor, and particularly to a diaphragm of a pressure sensor.
(従来の技術)
従来、圧力によって変形するダイアフラム上に抵抗素子
を形成し、その抵抗値の変化より圧力を検出する圧力セ
ンサは、厚膜抵抗体を使用する場合には、ダイアフラム
の材質として、比較的強度が大きく、入手が容易で、且
つ厚膜材料との相性に実績の高いアルミナセラミックス
等が用いられている。(Prior Art) Conventionally, a pressure sensor that forms a resistance element on a diaphragm that deforms due to pressure and detects pressure from a change in resistance value uses a thick film resistor as the material of the diaphragm. Alumina ceramics and the like are used, which have relatively high strength, are easily available, and have a proven track record of compatibility with thick film materials.
(発明が解決しようとする問題点)
従来より厚膜圧力センサとして用いられているダイアフ
ラムの材質は通常アルミナセラミックスであり、このセ
ラミックスは酸化アルミニウム96%程度を含有するの
が普通である。(Problems to be Solved by the Invention) The material of the diaphragm conventionally used as a thick film pressure sensor is usually alumina ceramic, and this ceramic usually contains about 96% aluminum oxide.
アルミナセラミックスを厚膜圧力センサのダイアフラム
材料として使用した場合の問題点を以下に列挙すれば、
■ ヤング率が約(3,2x 10104)/■膳2と
高い値を持っているのでダイアフラムの厚さを薄く、ま
た径を大きく形成しないと大きな歪が得られないこと、
すなわちこの関係は次式の示す通りである。The problems when using alumina ceramics as a diaphragm material for thick film pressure sensors are as follows: ■ Young's modulus is as high as approximately (3.2 x 10104)/■ 2, so the thickness of the diaphragm is A large strain cannot be obtained unless the diameter is made thin and the diameter is large.
That is, this relationship is as shown by the following equation.
ε=σ/E ε:歪 a=半径σ:応力
E:ヤング率
■ 破壊靭性が約4MPam172 と小さいので大き
な圧力変化により脆性破壊が起きやすいこと、■ 破壊
強度が約30 kg/+u+2と小さいので、圧力セン
サとしての定格圧力を高く設定できないこと等の問題点
があった。ε=σ/E ε: Strain a=Radius σ: Stress E: Young's modulus ■ Fracture toughness is small at about 4 MPam172, so brittle fracture is likely to occur due to large pressure changes; ■ Fracture strength is small at about 30 kg/+u+2 However, there were problems such as the inability to set a high rated pressure as a pressure sensor.
本発明は前述の問題点を克服するため、破壊靭性と曲げ
強度に優れた材料よりなるダイアフラムを提供するもの
である。In order to overcome the above-mentioned problems, the present invention provides a diaphragm made of a material with excellent fracture toughness and bending strength.
(問題点を解決するための手段)
すなわち、従来例のセラミックダイアフラムの前記のよ
うな問題点を解決するために、ダイアプラムに破壊靭性
と曲げ強度の優れた材料として金属例えばSUS 、鉄
の上にホーロー(硼珪酸鉛ガラス主体)により絶縁層を
形成したものを採用した(作 用)
本発明によれば、ダイアフラムの構成材質として、ヤン
グ率の小さく且つ破壊靭性及び曲げ強度の大きい金属を
採用しているので、高感度で且つ圧力衝撃に強い、小型
高圧用圧力センサを得ることができる。(Means for Solving the Problems) That is, in order to solve the above-mentioned problems of conventional ceramic diaphragms, the diaphragm is made of metal such as SUS or iron as a material with excellent fracture toughness and bending strength. According to the present invention, a metal having a small Young's modulus and high fracture toughness and bending strength is used as the constituent material of the diaphragm. Therefore, it is possible to obtain a compact high-pressure pressure sensor that is highly sensitive and resistant to pressure shock.
また、前記数式からも明らかなようにダイアフラムの厚
さを薄くし、径を大きくすることにより感度の高い微圧
用圧力センサを得ることもできる。また厚膜抵抗を用い
ているので熱安定性も良好である。Further, as is clear from the above formula, a pressure sensor for low pressure with high sensitivity can be obtained by reducing the thickness of the diaphragm and increasing the diameter. Furthermore, since a thick film resistor is used, thermal stability is also good.
(実施例)
以下添付図面を参照して本発明に係る実施例を説明する
。(Examples) Examples according to the present invention will be described below with reference to the accompanying drawings.
第1図(a)において、符号1はホーロー絶縁層で、金
属基体2の上面に形成されている。金属基体2は通常S
OS、鉄等よりなるものである。In FIG. 1(a), reference numeral 1 denotes a hollow insulating layer formed on the upper surface of a metal base 2. In FIG. The metal base 2 is usually S
It is made of OS, iron, etc.
以下本明細書では、前記絶縁層lと基体2とで構成され
る部材をダイアフラムFと称することとする。Hereinafter, in this specification, a member composed of the insulating layer 1 and the base 2 will be referred to as a diaphragm F.
ダイアフラムFの絶縁層lの上面にブリッジ回路3を形
成する。第1図(b)はダイアフラム基体2に設けた環
状孔4の底部に配設した抵抗R+ 、R2。A bridge circuit 3 is formed on the upper surface of the insulating layer l of the diaphragm F. FIG. 1(b) shows resistors R+ and R2 arranged at the bottom of the annular hole 4 provided in the diaphragm base 2.
R3,R4を図示する。前記環状孔4のほぼ中心近傍に
抵抗R2,R4が又環状孔4底面で形成する同心円上に
抵抗R1,R3が配設される。絶縁層l、基体2よりな
るダイアフラムFへ、基体2の環状孔4方向より圧力P
を加えた場合、抵抗R1,R3は圧縮され、同時に抵抗
R2,R,は伸長されるように本発明はその程度が最も
大きい位置に前記抵抗群を配設する。すなわち既に説明
したように、圧縮される抵抗R3の位置は基体環状孔4
の底面である同心円上であれば任意の個所でよい、つま
り第1図(b)に図示のように抵抗R3を移動してR3
°の位置に設定してもよい。R3 and R4 are illustrated. Resistors R2 and R4 are arranged substantially near the center of the annular hole 4, and resistors R1 and R3 are arranged on concentric circles formed by the bottom surface of the annular hole 4. Pressure P is applied from the direction of the annular hole 4 of the base 2 to the diaphragm F consisting of the insulating layer 1 and the base 2.
In the present invention, the resistor group is arranged at a position where the degree of compression is greatest so that when the resistors R1 and R3 are compressed and the resistors R2 and R are expanded at the same time. That is, as already explained, the position of the resistor R3 to be compressed is the base annular hole 4.
Any location may be used as long as it is on the concentric circle that is the bottom of the
It may also be set at the ° position.
次に第1図(C)は抵抗RI、R2、R3、Ra テ構
成するブリッジ回路を示す、この回路は公知のものであ
るから詳細な説明を省略する。Next, FIG. 1(C) shows a bridge circuit composed of resistors RI, R2, R3, and Ra. This circuit is well known, so a detailed explanation thereof will be omitted.
更に本発明の実施例では、金属基体2にはSuSを採用
し、これに切削、研摩加工をほどこし、その上面に硼珪
酸鉛系のガラスを主体にした基体2(SUS )に類似
の熱膨張係数を待つペーストを厚膜手法により印刷焼成
し20〜40gmの厚さの絶縁層1を形成する。Furthermore, in the embodiment of the present invention, SuS is used as the metal substrate 2, which is subjected to cutting and polishing processing, and its upper surface is made of a thermal expansion material similar to that of the substrate 2 (SUS), which is mainly made of lead borosilicate glass. The paste waiting for the coefficient is printed and fired by a thick film method to form an insulating layer 1 having a thickness of 20 to 40 gm.
更に前記絶縁層上に感圧抵抗を配設したブリッジ回路3
を、厚膜手法により形成するものである。尚この実施例
では金属基体にSUSを用いたが、これに限らず他の金
属を採用してもよい、また絶縁層の形成方法は実施例〒
は厚膜手法を用いたがその他スプレー法、溶射法、塗付
法等でもよいことは勿論である。Furthermore, a bridge circuit 3 in which a pressure sensitive resistor is arranged on the insulating layer.
is formed by a thick film method. Although SUS was used for the metal base in this example, it is not limited to this and other metals may be used.The method for forming the insulating layer is as described in Example 1.
Although a thick film method was used in the above, it goes without saying that other methods such as a spray method, thermal spraying method, coating method, etc. may also be used.
第2図は圧力センサの圧力−出力値のグラフを示す、こ
のダイアフラムはφ10.t=1.25mmである。こ
の図において従来例のセラミックスのダイアプラムを具
えた圧力センサS2は450kg/cs+2の圧力で破
壊を生ずるが、本発明に係る基体及び絶縁層を具えた圧
力センサS1は500kg/C112の圧力を加えても
破壊を起さない、また出力電圧に関しても、本発明に係
る圧力センナSlは従来のものに比べ2.1倍大きい、
従って本発明に係る圧力センサSlは従来のものに比較
して太きな定格圧力を設定出来、また出力電圧も大きな
値が得られる。Figure 2 shows a pressure-output value graph of a pressure sensor, whose diaphragm is φ10. t=1.25mm. In this figure, the conventional pressure sensor S2 with a ceramic diaphragm breaks down at a pressure of 450 kg/cs+2, but the pressure sensor S1 with the base and insulating layer according to the present invention breaks down when a pressure of 500 kg/cs+2 is applied. Also, regarding the output voltage, the pressure sensor Sl according to the present invention is 2.1 times larger than the conventional one.
Therefore, the pressure sensor S1 according to the present invention can set a larger rated pressure and obtain a larger output voltage than the conventional pressure sensor.
以上説明したように本発明によれば、金属基体の上にホ
ーロー絶縁層を形成したダイアフラムを具えた圧力セン
サを提供するもので、その製造方法も比較的簡単、かつ
安価であり、従って大量生産に適している。As explained above, the present invention provides a pressure sensor equipped with a diaphragm in which a hollow insulating layer is formed on a metal base, and its manufacturing method is relatively simple and inexpensive, and therefore mass production is possible. suitable for
また本発明に係る圧力センサは相当の圧力下でも破゛壊
を発生せず且つ高感度で熱安定性の良好なひずみ感知を
必要とする場合にも適用可能である。また本発明は、圧
力センサに関するものであるが、加速度、歪、荷重、ね
じりモーメント等の物理量の変化を測定するセンサにも
適用できることは勿論である。Furthermore, the pressure sensor according to the present invention can be applied to cases where strain sensing with high sensitivity and good thermal stability is required, without causing destruction even under considerable pressure. Furthermore, although the present invention relates to a pressure sensor, it is of course applicable to sensors that measure changes in physical quantities such as acceleration, strain, load, and torsional moment.
第1図は本発明の一実施例を示し、第2図は実施例の圧
力−出力の特性を表すグラフである。
第1図(a)は本発明に係る圧力センサの一実施例の路
線側面図、
同(b)は第1図の下面より見た抵抗群の配設を示す平
面図、
同(c)はブリッジ回路図、
第2図は圧力センサの圧カー出カ値の特性を示すグラフ
である。
F・・・ダイアフラム、l・・・絶縁層、2・・・基体
、3・・・ブリッジ回路、4・・・環状孔特許出願人
株式会社デルファイ
代理人 弁理士 小 林 栄
光1図
第2図
斥力(kg cm)FIG. 1 shows an embodiment of the present invention, and FIG. 2 is a graph showing pressure-output characteristics of the embodiment. FIG. 1(a) is a line side view of one embodiment of the pressure sensor according to the present invention, FIG. 1(b) is a plan view showing the arrangement of the resistor group as seen from the bottom of FIG. 1, and FIG. 1(c) is a Bridge circuit diagram FIG. 2 is a graph showing the characteristics of the pressure output value of the pressure sensor. F...diaphragm, l...insulating layer, 2...substrate, 3...bridge circuit, 4...annular hole patent applicant
Delphi Co., Ltd. Agent Patent Attorney Eiko Kobayashi Figure 1 Figure 2 Repulsion (kg cm)
Claims (1)
ムと更にこの上に構成したブリッジ回路とにより前記ダ
イアフラムの変形の関数としての前記ブリッジ回路にお
ける抵抗の変化を感知する手段において、前記基体に金
属を用いこの金属面上にガラス絶縁層を形成したダイア
フラムを有する圧力センサ。 2、基体にSUS、鉄等の金属を用い、この金属面上に
ホーロー(硼珪酸鉛ガラス体を主体とする)により絶縁
層を形成してなるダイアフラムを具えた請求項1記載の
圧力センサ。[Claims] 1. Sensing a change in resistance in the bridge circuit as a function of deformation of the diaphragm by means of a diaphragm comprising a base body and an insulating layer provided thereon, and a bridge circuit further constructed thereon. The pressure sensor has a diaphragm in which the base is made of metal and a glass insulating layer is formed on the metal surface. 2. The pressure sensor according to claim 1, further comprising a diaphragm formed by using a metal such as SUS or iron as the base and forming an insulating layer of enamel (mainly made of lead borosilicate glass) on the metal surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23730588A JPH0285738A (en) | 1988-09-21 | 1988-09-21 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23730588A JPH0285738A (en) | 1988-09-21 | 1988-09-21 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0285738A true JPH0285738A (en) | 1990-03-27 |
Family
ID=17013398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23730588A Pending JPH0285738A (en) | 1988-09-21 | 1988-09-21 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0285738A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07167720A (en) * | 1993-12-14 | 1995-07-04 | Matsushita Electric Ind Co Ltd | Pressure sensor |
-
1988
- 1988-09-21 JP JP23730588A patent/JPH0285738A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07167720A (en) * | 1993-12-14 | 1995-07-04 | Matsushita Electric Ind Co Ltd | Pressure sensor |
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