JPH0286617A - Highly heat-dissipating epoxy resin composition - Google Patents
Highly heat-dissipating epoxy resin compositionInfo
- Publication number
- JPH0286617A JPH0286617A JP23925188A JP23925188A JPH0286617A JP H0286617 A JPH0286617 A JP H0286617A JP 23925188 A JP23925188 A JP 23925188A JP 23925188 A JP23925188 A JP 23925188A JP H0286617 A JPH0286617 A JP H0286617A
- Authority
- JP
- Japan
- Prior art keywords
- epoxy resin
- resin composition
- filler
- silicon nitride
- properties
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 40
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 40
- 239000000203 mixture Substances 0.000 title claims description 26
- 239000000945 filler Substances 0.000 claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 229920003986 novolac Polymers 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 16
- 230000002950 deficient Effects 0.000 abstract description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 238000013329 compounding Methods 0.000 abstract 1
- 239000004843 novolac epoxy resin Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000035882 stress Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 7
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910002026 crystalline silica Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004841 bisphenol A epoxy resin Substances 0.000 description 1
- 239000004842 bisphenol F epoxy resin Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は、高熱放散性エポキシ樹脂組成物に関するも
のである。さらに詳しくは、この発明は、半導体封止用
エポキシ樹脂組成物として、熱放散性を向上させかつリ
ーク不良発生率を低下させた高熱放散性エポキシ樹脂組
成物に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) This invention relates to a highly heat dissipating epoxy resin composition. More specifically, the present invention relates to a highly heat-dissipating epoxy resin composition that has improved heat-dissipating properties and reduced the incidence of leak defects, as an epoxy resin composition for semiconductor encapsulation.
（従来の技術）
半導体素子の封止用樹脂としては、従来より耐湿性、耐
熱性等の性能や、価格などの点において適当なエポキシ
樹脂が広く使用されているが、近年では半導体素子の高
密度、高集積化に件って、そのパッケージの小型、薄型
化の要求とともに素子の発熱よる熱疲労を低減すべく熱
放散性を向上させること、および半導体素子と封止用樹
脂との間に発生する熱応力を低減させることが要求され
ている。(Prior art) Epoxy resins have been widely used as encapsulating resins for semiconductor devices, as they are suitable for performance such as moisture resistance and heat resistance, as well as cost. In order to achieve higher density and higher integration, there is a need for smaller and thinner packages, as well as improvements in heat dissipation to reduce thermal fatigue caused by heat generation of the elements, and the need to improve heat dissipation between the semiconductor elements and the encapsulating resin. There is a need to reduce the thermal stress generated.
このような半導体素子の封止の熱放散性、低応力性を向
上させるために、一般には、熱放散性のよい結晶性シリ
カやアルミナ等のフィラーを封止用エポキシ樹脂に配合
することが種々の方法によりなされている。また、フィ
ラーの配合についての新しい試みも提案されている。In order to improve the heat dissipation properties and low stress properties of the encapsulation of semiconductor elements, fillers such as crystalline silica and alumina, which have good heat dissipation properties, are generally mixed into the encapsulation epoxy resin in various ways. This is done using the following method. In addition, new attempts at blending fillers have also been proposed.
たとえば、このような試みとしては、水酸化アルミニウ
ムと水酸化アルミニウムによって表面処理した赤燐の粉
末とをエポキシ樹脂に配合する方法が提案されている（
特開昭６１−２７６８１６ ）。For example, as an attempt to do this, a method has been proposed in which aluminum hydroxide and red phosphorus powder whose surface has been treated with aluminum hydroxide are blended into an epoxy resin (
JP-A-61-276816).
（発明が解決しようとする課題）
しかしながら、これまでに知られているフィラーを使用
したとしても、その熱放散性、低応力性の向上には限界
があり、今後の半導体素子の高密度実装、超ＬＳＩの高
集積化に十分に対応できるものにはならない。(Problems to be Solved by the Invention) However, even if the fillers known so far are used, there is a limit to the improvement of their heat dissipation properties and low stress properties. It will not be able to fully cope with the high integration of VLSI.
この発明は以上の通りの事情に鑑みてなされたものであ
り、従来の半導体素子封止用のエポキシ樹脂組成物の欠
点を改善し、熱放散性に優れ、低応力化を実現でき、リ
ーク不良の発生を解消することのできる、高熱放散性エ
ポキシ樹脂組成物を提供することを目的としている。This invention was made in view of the above-mentioned circumstances, and it improves the drawbacks of conventional epoxy resin compositions for encapsulating semiconductor elements, has excellent heat dissipation properties, can realize low stress, and is free from leakage. The object of the present invention is to provide a highly heat dissipating epoxy resin composition that can eliminate the occurrence of.
（課題を解決するための手段）
この発明は、上記の課題を解決するなめに、（ａ）エポ
キシ樹脂、 （ｂ）フェノールノボラック系硬化剤、お
よび（Ｃ）一部または全部が窒化ケイ珪素フィラーから
なり、窒化ケイ珪素フィラーの磁性分量が２００ｐｐｍ
以下であるフィラーを含有することを特徴とする高熱放
散性エポキシ樹脂組成物を提供する。(Means for Solving the Problems) In order to solve the above problems, the present invention provides (a) an epoxy resin, (b) a phenol novolac curing agent, and (C) a silicon nitride filler that is partially or entirely composed of a silicon nitride filler. The magnetic content of silicon nitride filler is 200 ppm.
Provided is a highly heat dissipating epoxy resin composition characterized by containing the following filler.
この発明のエポキシ樹脂は、熱放散性および低応力性を
向上させること、特に膨脹率（αＩ）を低下させる点に
おいて窒化ケイ素をフィラーとすることが有利であり、
さらにフィラーとする窒化ケイ素としては粒子径１〜５
０μｍのものを用い、フィラー中の磁性分量が２００ｐ
ｐｍ以下となるように配合すると、熱放散性と低応力性
が著しく向上し、かつリーク不良の発生を解消すること
ができるとの知見に基づいてなされたものである。In the epoxy resin of the present invention, it is advantageous to use silicon nitride as a filler in terms of improving heat dissipation properties and low stress properties, and particularly reducing the coefficient of expansion (αI),
Furthermore, the particle size of silicon nitride used as a filler is 1 to 5.
0μm filler is used, and the magnetic content in the filler is 200p.
This was done based on the knowledge that when blended so as to be less than pm, heat dissipation and low stress properties are significantly improved, and the occurrence of leakage defects can be eliminated.
この発明の組成物のベース樹脂となるエポキシ樹脂とし
ては、耐湿性、耐熱性等の性能の良好なものとして知ら
れている従来公知のものを適宜使用することができる。As the epoxy resin serving as the base resin of the composition of the present invention, conventionally known epoxy resins known to have good performance such as moisture resistance and heat resistance can be used as appropriate.
このようなエポキシ樹脂自体としては、たとえば、ノボ
ラック型エポキシ樹脂、ビスフェノールＡ型エポキシ樹
脂、ビスフェノールＦ型エポキシ樹脂、脂環式エポキシ
樹脂、ハロゲン化エポキシ樹脂などを例示することがで
きる。Examples of such epoxy resins include novolak epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, alicyclic epoxy resins, and halogenated epoxy resins.
また、フェノールノボラック系硬化剤としても従来より
使用されているものを用いることができる。この場合、
１分子中に２個以上のフェノール性水酸基を有するフェ
ノールノボラック系硬化剤を好ましいものとして例示す
ることができる。Furthermore, conventionally used phenol novolak curing agents can be used. in this case,
Preferred examples include phenol novolak curing agents having two or more phenolic hydroxyl groups in one molecule.
熱放散性等を改善するフィラーとしては、上記のように
窒化ケイ素フィラーを使用する。その粒子径としては１
〜５０μｍのものが好ましい。As the filler for improving heat dissipation properties, silicon nitride filler is used as described above. Its particle size is 1
~50 μm is preferred.
また、窒化ケイ素フィラーを使用するに際しては、フィ
ラーの全量を窒化ケイ素フィラーとしてもよく、あるい
はその一部を窒化ケイ素フィラーとして用いてもよい、
ただし窒化ケイ素フィラーの磁性分量がフィラー中２０
０ｐｐｍ以下となるようにする。このように磁性分量を
従来の１／１０以下に制御して窒化ケイ素フィラーをエ
ポキシ樹脂組成物に配合することにより、パワートラン
ジスタデバイスはらちるんのこと、集積度の高いＬＳＩ
の分野においてもリーク不良の発生を低減させることの
できる優れた半導体封止用樹脂組成物となる。In addition, when using silicon nitride filler, the entire amount of the filler may be used as silicon nitride filler, or a portion thereof may be used as silicon nitride filler.
However, the magnetic content of silicon nitride filler is 20% in the filler.
Ensure that it is 0 ppm or less. In this way, by controlling the magnetic content to 1/10 or less of the conventional amount and blending silicon nitride filler into the epoxy resin composition, it is possible to create power transistor devices and highly integrated LSIs.
It is an excellent resin composition for semiconductor encapsulation that can reduce the occurrence of leakage defects also in the field of.
以上のように、この発明の高熱放散性エポキシ樹脂組成
物は、 ［ａ）エポキシ樹脂、 （ｂ）フェノールノボ
ランク系硬化剤、およびＦＣ）一部または全部が窒化ケ
イ珪素フィラーからなり、窒化ケイ珪素フィラーの磁性
分量が２００ｐｐｍ以下であるフィラーを含有するもの
であるが、さらに封止用樹脂としての特性を（ｐなわな
い限り他の種々の添加剤を配合することができる。たと
えは、シリコーン系改質剤、難燃剤、硬化促進剤、離型
剤、着色剤などを半導体素子の種類、用途に応じて適宜
配合することができる。As described above, the high heat dissipation epoxy resin composition of the present invention consists of (a) an epoxy resin, (b) a phenol novolanic curing agent, and (FC) a silicon nitride filler in part or in its entirety. Although it contains a filler in which the magnetic content of the silicon filler is 200 ppm or less, various other additives can be added as long as they do not further improve the properties as a sealing resin.For example, silicone A system modifier, a flame retardant, a curing accelerator, a mold release agent, a coloring agent, etc. can be blended as appropriate depending on the type and use of the semiconductor element.
また、この発明のエポキシ樹脂組成物を用いて半導体を
封止する方法としては、従来と同様のものを封止する半
導体素子等に応じて適宜採用することができる。Further, as a method for encapsulating a semiconductor using the epoxy resin composition of the present invention, it is possible to appropriately adopt a conventional method depending on the semiconductor element to be encapsulated.
（作 用）
この発明の高熱放散性エポキシ樹脂組成物は、エポキシ
樹脂に優れた熱放散性と低応力性を１１与する窒化ケイ
素を、フィラーの磁性分量が２００ｐｐｍ以下となるよ
うに制御して配合しているので、封止樹脂として熱放散
性、低応力性に潰れ、特に膨張率が極めて低く、かつリ
ーク不良を解消することができるものとなる。(Function) The high heat dissipation epoxy resin composition of the present invention contains silicon nitride, which gives the epoxy resin excellent heat dissipation and low stress properties, by controlling the magnetic content of the filler to 200 ppm or less. As a result of this, the sealing resin has good heat dissipation properties, low stress, collapses, particularly has an extremely low expansion coefficient, and can eliminate leakage defects.
（実施例）
以下、実施例を示して、この発明の樹脂組成物を具体的
に説明する。(Example) Hereinafter, the resin composition of the present invention will be specifically explained with reference to Examples.
実施例１
クレーゾールノボラック型エポキシ樹脂に硬化剤として
フェノールノボラック系硬化剤を配合し、これに、磁性
分ｊ１２００ ｐ ｐ ｍの窒化ケイ素フィラー（ＳＳ
ｓＮ４）を８０ｗｔ％添加してエポキシ樹脂組成物を調
製した。Example 1 A phenol novolac type curing agent was blended into a cresol novolac type epoxy resin as a curing agent, and a silicon nitride filler (SS
An epoxy resin composition was prepared by adding 80 wt% of sN4).
なお、使用した窒化ケイ素フィラーの磁性分量は、自動
磁性分析計（ＨＡＧＮＥＴＩＣＡＮＡＬＹ２ＦＲ）によ
り測定した。The magnetic content of the silicon nitride filler used was measured using an automatic magnetic analyzer (HAGNETICANALY2FR).
得られたエポキシ樹脂組成物の熱伝導率、線膨張率およ
びリーク不良発生率について評価した。The resulting epoxy resin composition was evaluated for thermal conductivity, coefficient of linear expansion, and incidence of leak defects.
この場合リーク不良発生率の評価は、評価素子としてＨ
Ｏ３ＴＥＧ （松下電工業株式会社製）を用い、第１図
に示す測定回路において試料を恒温槽１（１００℃）中
に設置し、Ｖ ａｓ＝Ｖ ａｓ＝ １０ Ｖとしてリー
ク電流ｔｏｓが１０ｍＡに達する時間を測定しく測定時
はスイッチｓｖ１ ＯＮ状態、スイッチ５ｗ２ＯＦＦ状
態、非測定時は５ｗ１ＯＦＦ状態、スイッチ５ｗ２ＯＮ
状態）、その時間が１００秒未満、１００〜１０００秒
、１０００秒を超えるものの３段階に判定し、１００秒
未満のものを不良とした。In this case, the leak failure rate is evaluated using H as the evaluation element.
Using O3TEG (manufactured by Matsushita Electric Industries, Ltd.), the sample was placed in thermostatic chamber 1 (100°C) in the measurement circuit shown in Figure 1, and the leakage current tos reached 10 mA with V as = V as = 10 V. When measuring time, switch sv1 is ON, switch 5w2 is OFF; when not measuring, 5w1 is OFF, switch 5w2 is ON.
condition), the time was judged in three stages: less than 100 seconds, 100 to 1000 seconds, and more than 1000 seconds, and those less than 100 seconds were judged as defective.
これらの評価結果は表１に示す通りであった。The results of these evaluations are shown in Table 1.
このエポキシ樹脂組成物は熱伝導率が高く、線膨張率が
低く、かつリーク不良の発生が皆無であり、封止樹脂と
して著しく優れた性質を有していた。This epoxy resin composition had high thermal conductivity, low coefficient of linear expansion, and no leakage defects, and had extremely excellent properties as a sealing resin.
実施例２
フィラーとして、磁性分量２００ ｐ ｐ ｍの窒化ケ
イ素フィラー（ＳｉｌＮ４）を□Ｑｗｔ％含有するもの
を用いて実施例１と同様にエポキシ樹脂組成物を調製し
、その性質を評価した。結果を表１に示す。Example 2 An epoxy resin composition was prepared in the same manner as in Example 1 using a filler containing □Qwt% of silicon nitride filler (SilN4) with a magnetic content of 200 ppm, and its properties were evaluated. The results are shown in Table 1.
この実施例においても、リーク不良の発生のない優れた
性質のエポキシ樹脂組成物が得られた。In this example as well, an epoxy resin composition with excellent properties and no leakage defects was obtained.
実施例３
フィラーとして、磁性分量１５０Ｐｐｍの窒化ケイ素フ
ィラー（ＳＳｓＮ＜）を７５ｗｔ％と結晶シリカ１０ｗ
ｔ％含有するものを用いて実施例１と同様にエポキシ樹
脂組成物を調製し、その性質を評価した。結果を表１に
示す。Example 3 As fillers, 75wt% of silicon nitride filler (SSsN<) with a magnetic content of 150Ppm and 10w of crystalline silica were used as fillers.
An epoxy resin composition was prepared in the same manner as in Example 1 using a composition containing t%, and its properties were evaluated. The results are shown in Table 1.
この実施例においても、リーク不良の発生のない優れた
性質のエポキシ樹脂組成物が得られた。In this example as well, an epoxy resin composition with excellent properties and no leakage defects was obtained.
比較例１
フィラーとして、磁性分量２２００ｐｐｍの窒化ケイ素
フィラー（Ｓｔ、Ｎ、）を８０ｗｔ％含有するものを用
いて実施例１と同様にエポキシ樹脂組成物を調製し、そ
の性質を評価しな、結果を表１に示す。Comparative Example 1 An epoxy resin composition was prepared in the same manner as in Example 1 using a filler containing 80 wt% silicon nitride filler (St, N,) with a magnetic content of 2200 ppm, and its properties were evaluated. are shown in Table 1.
この比較例においてはリーク不良の発生率が著しく高く
、封止樹脂として子分な性能は得られなかった。In this comparative example, the incidence of leakage defects was extremely high, and the performance as a sealing resin could not be achieved.
比較例２
フィラーとして、結晶シリカを８０ｗｔ％含有するもの
を用いて実施例１と同様にエポキシ樹脂組成物を調製し
、その性質を評価した。結果を表１に示す。Comparative Example 2 An epoxy resin composition was prepared in the same manner as in Example 1 using a filler containing 80 wt% of crystalline silica, and its properties were evaluated. The results are shown in Table 1.
この比較例においてはリーク不良の発生はないが熱伝導
率が低く、線膨張率も高く、封止樹脂として満足できる
ものではなかった。In this comparative example, there was no occurrence of leakage defects, but the thermal conductivity was low and the coefficient of linear expansion was high, making it unsatisfactory as a sealing resin.
（発明の効果）
この発明の高熱放散性エポキシ樹脂組成物によれば、封
止樹脂の熱放散性と低応力性を向上させることかでき、
さらにリーク不良発生率も著しく低減させることができ
る。したがって、この発明のエポキシ樹脂組成物を用い
ることにより、パワートランジスタデバイスや高集積化
ＬＳＩの良好な樹脂封止が可能となる。(Effects of the Invention) According to the high heat dissipation epoxy resin composition of the present invention, the heat dissipation properties and low stress properties of the sealing resin can be improved,
Furthermore, the incidence of leak defects can be significantly reduced. Therefore, by using the epoxy resin composition of the present invention, it is possible to perform good resin sealing of power transistor devices and highly integrated LSIs.
第１図はリーク不良発生率の測定回路図である。 FIG. 1 is a circuit diagram for measuring the incidence of leak defects.
Claims (2)
ク系硬化剤、および（ｃ）一部または全部が窒化ケイ珪
素フィラーからなり、窒化ケイ珪素フィラーの磁性分量
が２００ｐｐｍ以下であるフィラーを含有することを特
徴とする高熱放散性エポキシ樹脂組成物。(1) Contains a filler consisting of (a) an epoxy resin, (b) a phenol novolac curing agent, and (c) a silicon nitride filler, in part or in whole, and the magnetic content of the silicon nitride filler is 200 ppm or less. A highly heat dissipating epoxy resin composition.
有する請求項（１）記載の高熱放散性エポキシ樹脂組成
物。(2) The highly heat-dissipating epoxy resin composition according to claim (1), which contains a silicon nitride filler having a particle size of 1 to 50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239251A JPH0623234B2 (en) | 1988-09-24 | 1988-09-24 | High heat dissipation epoxy resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63239251A JPH0623234B2 (en) | 1988-09-24 | 1988-09-24 | High heat dissipation epoxy resin composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0286617A true JPH0286617A (en) | 1990-03-27 |
| JPH0623234B2 JPH0623234B2 (en) | 1994-03-30 |
Family
ID=17041985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63239251A Expired - Lifetime JPH0623234B2 (en) | 1988-09-24 | 1988-09-24 | High heat dissipation epoxy resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0623234B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328930A (en) * | 1993-03-01 | 1994-07-12 | Emory University | Treatment of microsporidial and acanthamoeba keratoconjunctivitis with topical fumagillin |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61101522A (en) * | 1984-10-25 | 1986-05-20 | Toshiba Chem Corp | Sealing resin composition |
| JPS61221220A (en) * | 1985-03-27 | 1986-10-01 | Toshiba Corp | Epoxy resin sealing composition and semiconductor device sealed therewith |
-
1988
- 1988-09-24 JP JP63239251A patent/JPH0623234B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61101522A (en) * | 1984-10-25 | 1986-05-20 | Toshiba Chem Corp | Sealing resin composition |
| JPS61221220A (en) * | 1985-03-27 | 1986-10-01 | Toshiba Corp | Epoxy resin sealing composition and semiconductor device sealed therewith |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328930A (en) * | 1993-03-01 | 1994-07-12 | Emory University | Treatment of microsporidial and acanthamoeba keratoconjunctivitis with topical fumagillin |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0623234B2 (en) | 1994-03-30 |
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