JPH03102752U - - Google Patents

Info

Publication number
JPH03102752U
JPH03102752U JP1990011022U JP1102290U JPH03102752U JP H03102752 U JPH03102752 U JP H03102752U JP 1990011022 U JP1990011022 U JP 1990011022U JP 1102290 U JP1102290 U JP 1102290U JP H03102752 U JPH03102752 U JP H03102752U
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor light
adhesive layer
submount
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990011022U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990011022U priority Critical patent/JPH03102752U/ja
Publication of JPH03102752U publication Critical patent/JPH03102752U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案の一実施例の構成を示す図、第
２図および第３図は従来の半導体発光装置の構成
を説明するための図である。 １……半導体発光素子、２……ろう材、３……
サブマウント、４……ろう材、５……ヒートシン
ク、６……ＡｕＳｎろう材、７……厚み１４０μ
ｍの薄型Ｓｉサブマウント、８……Ｉｎろう材、
９……Ｃｕヒートシンク。 FIG. 1 is a diagram showing the configuration of an embodiment of the present invention, and FIGS. 2 and 3 are diagrams for explaining the configuration of a conventional semiconductor light emitting device. 1... Semiconductor light emitting device, 2... Brazing material, 3...
Submount, 4... Brazing metal, 5... Heat sink, 6... AuSn brazing metal, 7... Thickness 140μ
m thin Si submount, 8...In brazing material,
9...Cu heat sink.

Claims (1)

【実用新案登録請求の範囲】 半導体発光素子とヒートシンクとの間にサブマ
ウントを介在させ、さらに前記半導体発光素子と
サブマウントを、第１の接着層で接着し、前記サ
ブマウントとヒートシンクを、第２の接着層で接
着した構成の半導体発光装置において、 前記サブマウントの厚みが５０〜２００ミクロ
ンであり、第１の接着層は前記半導体発光素子へ
の拡散のないＩｎ以外の材料からなり、第２の接
着層はブリネルかたさが３０Kg／mm２より小さな
材料からなることを特徴とする半導体発光装置。[Claims for Utility Model Registration] A submount is interposed between a semiconductor light emitting device and a heat sink, the semiconductor light emitting device and the submount are bonded together with a first adhesive layer, and the submount and the heat sink are bonded together by a first adhesive layer. In the semiconductor light emitting device having a structure in which the submount is bonded with a second adhesive layer, the thickness of the submount is 50 to 200 microns, the first adhesive layer is made of a material other than In that does not diffuse into the semiconductor light emitting element, and the first adhesive layer is made of a material other than In that does not diffuse into the semiconductor light emitting element. A semiconductor light emitting device characterized in that the adhesive layer of No. 2 is made of a material having a Brinell hardness of less than 30 Kg/mm 2 .
JP1990011022U 1990-02-08 1990-02-08 Pending JPH03102752U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990011022U JPH03102752U (en) 1990-02-08 1990-02-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990011022U JPH03102752U (en) 1990-02-08 1990-02-08

Publications (1)

Publication Number Publication Date
JPH03102752U true JPH03102752U (en) 1991-10-25

Family

ID=31514566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990011022U Pending JPH03102752U (en) 1990-02-08 1990-02-08

Country Status (1)

Country Link
JP (1) JPH03102752U (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6052079A (en) * 1983-09-01 1985-03-23 Matsushita Electric Ind Co Ltd semiconductor laser equipment
JPS6210461B2 (en) * 1979-04-11 1987-03-06 Nippon Electric Co

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210461B2 (en) * 1979-04-11 1987-03-06 Nippon Electric Co
JPS6052079A (en) * 1983-09-01 1985-03-23 Matsushita Electric Ind Co Ltd semiconductor laser equipment

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