JPH03103603U - - Google Patents

Info

Publication number
JPH03103603U
JPH03103603U JP1990011858U JP1185890U JPH03103603U JP H03103603 U JPH03103603 U JP H03103603U JP 1990011858 U JP1990011858 U JP 1990011858U JP 1185890 U JP1185890 U JP 1185890U JP H03103603 U JPH03103603 U JP H03103603U
Authority
JP
Japan
Prior art keywords
transistor
chip
mos type
type capacitors
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1990011858U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990011858U priority Critical patent/JPH03103603U/ja
Publication of JPH03103603U publication Critical patent/JPH03103603U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/5445Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Microwave Amplifiers (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例に係る高周波高出力ト
ランジスタの概略構成を示す平面構造図であり、
第2図はその従来例を示す平面構造図である。 図における符号1は高周波高出力トランジスタ
、2はキヤパシタチツプ、11はトランジスタチ
ツプ、C,CはMOS形キヤパシタである。
なお、図中の同一符号は、互いに同一もしくは相
当する部品、部分を示している。
FIG. 1 is a plan view showing a schematic configuration of a high frequency, high output transistor according to an embodiment of the present invention.
FIG. 2 is a plan structural diagram showing a conventional example. In the figure, reference numeral 1 is a high-frequency, high-output transistor, 2 is a capacitor chip, 11 is a transistor chip, and C 1 and C 2 are MOS type capacitors.
Note that the same reference numerals in the figures indicate the same or corresponding parts and portions.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] トランジスタチツプと、その入力及び出力側を
構成する複数のMOS形キヤパシタが形成された
単一のキヤパシタチツプとを備えたことを特徴と
する高周波高出力トランジスタ。
A high frequency, high output transistor comprising a transistor chip and a single capacitor chip formed with a plurality of MOS type capacitors constituting the input and output sides of the transistor chip.
JP1990011858U 1990-02-07 1990-02-07 Pending JPH03103603U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990011858U JPH03103603U (en) 1990-02-07 1990-02-07

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990011858U JPH03103603U (en) 1990-02-07 1990-02-07

Publications (1)

Publication Number Publication Date
JPH03103603U true JPH03103603U (en) 1991-10-28

Family

ID=31515373

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990011858U Pending JPH03103603U (en) 1990-02-07 1990-02-07

Country Status (1)

Country Link
JP (1) JPH03103603U (en)

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