JPH03109357U - - Google Patents

Info

Publication number
JPH03109357U
JPH03109357U JP1758790U JP1758790U JPH03109357U JP H03109357 U JPH03109357 U JP H03109357U JP 1758790 U JP1758790 U JP 1758790U JP 1758790 U JP1758790 U JP 1758790U JP H03109357 U JPH03109357 U JP H03109357U
Authority
JP
Japan
Prior art keywords
potential
photodiode
photo sensor
reversed
reverse biased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1758790U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1758790U priority Critical patent/JPH03109357U/ja
Publication of JPH03109357U publication Critical patent/JPH03109357U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案に係る実施例のフオトセンサに
おける光強度検出回路を示す概略図である。第2
図は従来のフオトダイオードを用いたフオトセン
サの光強度検出回路を示す概略図である。 符号の説明、1…フオトダイオード、1a…接
合容量、2…補償用ダイオード、3…リセツトト
ランジスタ、4…電位比較回路、10…高電位端
子、12…電位変動部、13…低電圧端子、30
…初期設定端子、31…制御端子、40…参照電
位端子、41…電位入力端子、42…出力端子。
FIG. 1 is a schematic diagram showing a light intensity detection circuit in a photo sensor according to an embodiment of the present invention. Second
The figure is a schematic diagram showing a light intensity detection circuit of a photo sensor using a conventional photodiode. Explanation of symbols, 1... Photodiode, 1a... Junction capacitance, 2... Compensation diode, 3... Reset transistor, 4... Potential comparison circuit, 10... High potential terminal, 12... Potential fluctuation section, 13... Low voltage terminal, 30
...Initial setting terminal, 31...Control terminal, 40...Reference potential terminal, 41...Potential input terminal, 42...Output terminal.

Claims (1)

【実用新案登録請求の範囲】 第1定電位の印加で逆バイアスされたフオトダ
イオードと、このフオトダイオードの第1定電位
の印加極とは逆極の電位を初期電位値に設定すべ
き開閉手段と、該逆極電位の変動速度を検出すべ
き電位変動速度検出手段と、を備えたフオトセン
サにおいて、 前記逆極電位と第2定電位の間で逆バイアスさ
れた暗電流補償用ダイオードが前記フオトダイオ
ードに対し直列接続されていることを特徴とする
フオトセンサ。
[Claims for Utility Model Registration] A photodiode that is reverse biased by applying a first constant potential, and a switching means for setting the initial potential value to a potential opposite to the pole to which the first constant potential is applied to the photodiode. and a potential fluctuation speed detecting means for detecting a fluctuation speed of the reversed potential, wherein a dark current compensation diode reverse biased between the reversed potential and a second constant potential is connected to the photo sensor. A photo sensor characterized by being connected in series to a diode.
JP1758790U 1990-02-23 1990-02-23 Pending JPH03109357U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1758790U JPH03109357U (en) 1990-02-23 1990-02-23

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1758790U JPH03109357U (en) 1990-02-23 1990-02-23

Publications (1)

Publication Number Publication Date
JPH03109357U true JPH03109357U (en) 1991-11-11

Family

ID=31520777

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1758790U Pending JPH03109357U (en) 1990-02-23 1990-02-23

Country Status (1)

Country Link
JP (1) JPH03109357U (en)

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