JPH03110856U - - Google Patents

Info

Publication number
JPH03110856U
JPH03110856U JP1831190U JP1831190U JPH03110856U JP H03110856 U JPH03110856 U JP H03110856U JP 1831190 U JP1831190 U JP 1831190U JP 1831190 U JP1831190 U JP 1831190U JP H03110856 U JPH03110856 U JP H03110856U
Authority
JP
Japan
Prior art keywords
electrode part
view
plan
terminal
showing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1831190U
Other languages
Japanese (ja)
Other versions
JP2531130Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1990018311U priority Critical patent/JP2531130Y2/en
Publication of JPH03110856U publication Critical patent/JPH03110856U/ja
Application granted granted Critical
Publication of JP2531130Y2 publication Critical patent/JP2531130Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の第1実施例による半導体デバ
イスの電極部構造を示す部分平面図、第2図は第
1図の端子の側面図、第3図は本考案による半導
体デバイスの例を示す平面図、第4図は従来技術
を説明する図、第5図は本考案の第2実施例を示
す平面図、第6図は本考案の第3実施例を示す平
面図、第7A図は本考案の第4実施例を示す平面
図、第7B図は本考案の第5実施例を示す平面図
、第7C図は本考案の第6実施例を示す平面図、
第8A図は本考案の第7実施例を示す平面図、第
8B図は第8A図の線−に沿つた断面図、第
9A図は第7実施例の応用例を示す平面図、第9
B図は第7実施例の他の応用例を示す平面図、第
10A図は本考案の第8実施例を示す平面図、第
10B図は第10A図の線−に沿つた断面図
、第11A図は本考案の第9実施例を示す平面図
、第11B図は第11A図の線−に沿つ
た断面図、第12図は本考案の第10実施例を示
す平面図、第13図は第12図の基板に端子を取
りつけたところを示す平面図である。 12……基板、18……ランド、20……電極
部、26……端子、28……挿入目印。
FIG. 1 is a partial plan view showing the electrode structure of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a side view of the terminal shown in FIG. 1, and FIG. 3 is an example of a semiconductor device according to the present invention. FIG. 4 is a plan view explaining the prior art, FIG. 5 is a plan view showing a second embodiment of the present invention, FIG. 6 is a plan view showing a third embodiment of the present invention, and FIG. 7A is a plan view showing a third embodiment of the present invention. FIG. 7B is a plan view showing the fifth embodiment of the present invention; FIG. 7C is a plan view showing the sixth embodiment of the present invention;
FIG. 8A is a plan view showing a seventh embodiment of the present invention, FIG. 8B is a sectional view taken along the line - of FIG. 8A, FIG. 9A is a plan view showing an application example of the seventh embodiment, and FIG.
Fig. B is a plan view showing another application example of the seventh embodiment, Fig. 10A is a plan view showing the eighth embodiment of the present invention, Fig. 10B is a sectional view taken along the line - of Fig. 10A, and Fig. 10A is a plan view showing another application example of the seventh embodiment. Figure 11A is a plan view showing a ninth embodiment of the present invention, Figure 11B is a sectional view taken along the line - in Figure 11A, Figure 12 is a plan view showing a tenth embodiment of the present invention, and Figure 13. 13 is a plan view showing terminals attached to the board of FIG. 12. FIG. 12... Board, 18... Land, 20... Electrode part, 26... Terminal, 28... Insertion mark.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 基板の少なくとも一側部に複数のランドを設け
た電極部を有し、端子を該電極部に直角な方向か
ら挿入し且つ該端子を該ランドに固定するように
した半導体デバイスの電極部構造において、該電
極部に該端子の挿入方向に延びる挿入目印を設け
たことを特徴とする半導体デバイスの電極部構造
In an electrode part structure of a semiconductor device having an electrode part provided with a plurality of lands on at least one side of a substrate, a terminal is inserted into the electrode part from a direction perpendicular to the electrode part, and the terminal is fixed to the land. An electrode part structure for a semiconductor device, characterized in that the electrode part is provided with an insertion mark extending in the insertion direction of the terminal.
JP1990018311U 1990-02-27 1990-02-27 Electrode structure of semiconductor device Expired - Lifetime JP2531130Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1990018311U JP2531130Y2 (en) 1990-02-27 1990-02-27 Electrode structure of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1990018311U JP2531130Y2 (en) 1990-02-27 1990-02-27 Electrode structure of semiconductor device

Publications (2)

Publication Number Publication Date
JPH03110856U true JPH03110856U (en) 1991-11-13
JP2531130Y2 JP2531130Y2 (en) 1997-04-02

Family

ID=31521474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1990018311U Expired - Lifetime JP2531130Y2 (en) 1990-02-27 1990-02-27 Electrode structure of semiconductor device

Country Status (1)

Country Link
JP (1) JP2531130Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837943A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Manufacture of hybrid integrated circuit
JPS5936975A (en) * 1982-08-25 1984-02-29 Fuji Electric Co Ltd Solar ray power generator

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837943A (en) * 1981-08-31 1983-03-05 Fujitsu Ltd Manufacture of hybrid integrated circuit
JPS5936975A (en) * 1982-08-25 1984-02-29 Fuji Electric Co Ltd Solar ray power generator

Also Published As

Publication number Publication date
JP2531130Y2 (en) 1997-04-02

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