JPH03113181U - - Google Patents
Info
- Publication number
- JPH03113181U JPH03113181U JP2286290U JP2286290U JPH03113181U JP H03113181 U JPH03113181 U JP H03113181U JP 2286290 U JP2286290 U JP 2286290U JP 2286290 U JP2286290 U JP 2286290U JP H03113181 U JPH03113181 U JP H03113181U
- Authority
- JP
- Japan
- Prior art keywords
- input
- output
- path
- semiconductor device
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Electric Properties And Detecting Electric Faults (AREA)
Description
第１図は本考案の一実施例の回路ブロツク図、
第２図は従来例の回路ブロツク図である。
１……高周波信号発生源、２……増幅器、３，
１６，１７，２１，２２，３６，４６……終端抵
抗、４，１８，１９，２０……３ｄＢ分配器、９
，１０，１５，２９，３０，３５，３９，４０，
４５……３ｄＢ合成器、１′，５，６，２３，２
４，２５，２６……可変抵抗器、７，８，２７，
２８，３７，３８……径路切替スイツチ、１１，
１２，３１，３２，４１，４２……半導体装置、
１３，１４，３３，３４，４３，４４……方向性
結合器、４７，４８，４９，５０，５１……高周
波検波回路。
FIG. 1 is a circuit block diagram of an embodiment of the present invention.
FIG. 2 is a circuit block diagram of a conventional example. 1...High frequency signal generation source, 2...Amplifier, 3,
16, 17, 21, 22, 36, 46... Termination resistor, 4, 18, 19, 20... 3dB distributor, 9
,10,15,29,30,35,39,40,
45...3dB combiner, 1', 5, 6, 23, 2
4, 25, 26...variable resistor, 7, 8, 27,
28, 37, 38...route selection switch, 11,
12, 31, 32, 41, 42... semiconductor device,
13, 14, 33, 34, 43, 44... Directional coupler, 47, 48, 49, 50, 51... High frequency detection circuit.
Claims (1)
この平衡増幅器の出力を後段の平衡増幅器の入力
とする、縦続並列型の寿命試験装置において、 平衡増幅器を構成する対の各半導体装置は、そ
れぞれの入力径路に、後記の高周波検波回路の出
力値により制御され他方の入力径路に信号を切替
可能とする径路切替スイツチと、他方の入力径路
からの切替られた信号を入力し、自己の入力信号
と合成する３ｄＢ合成器とを有するとともに、各
半導体装置は出力側に設けた方向性結合器の出力
を検波する高周波検波回路を有し、一方の半導体
装置の出力が極端に低下したときに、前記高周波
検波回路の直流出力により、径路切替スイツチを
作動しこの半導体装置への入力を他方の入力径路
の３ｄＢ合成器に導くことを特徴とする高周波半
導体装置の寿命試験装置。[Scope of Claim for Utility Model Registration] In a cascade-parallel life test device in which the semiconductor device under test is configured as a balanced amplifier and the output of this balanced amplifier is input to the subsequent balanced amplifier, Each of the semiconductor devices has a path changeover switch in each input path that is controlled by the output value of the high frequency detection circuit described later and allows the signal to be switched to the other input path, and a path changeover switch that allows the signal to be switched from the other input path to the other input path. In addition to having a 3 dB combiner that inputs the input signal and combines it with its own input signal, each semiconductor device has a high frequency detection circuit that detects the output of the directional coupler provided on the output side, and the output of one semiconductor device is A life test of a high frequency semiconductor device, characterized in that when the voltage drops extremely, the DC output of the high frequency detection circuit activates a path changeover switch to guide the input to this semiconductor device to a 3 dB combiner on the other input path. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2286290U JPH03113181U (en) | 1990-03-06 | 1990-03-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2286290U JPH03113181U (en) | 1990-03-06 | 1990-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03113181U true JPH03113181U (en) | 1991-11-19 |
Family
ID=31525869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2286290U Pending JPH03113181U (en) | 1990-03-06 | 1990-03-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03113181U (en) |
-
1990
- 1990-03-06 JP JP2286290U patent/JPH03113181U/ja active Pending
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