JPH0311487B2 - - Google Patents
Info
- Publication number
- JPH0311487B2 JPH0311487B2 JP57070047A JP7004782A JPH0311487B2 JP H0311487 B2 JPH0311487 B2 JP H0311487B2 JP 57070047 A JP57070047 A JP 57070047A JP 7004782 A JP7004782 A JP 7004782A JP H0311487 B2 JPH0311487 B2 JP H0311487B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- ferroelectric
- thin film
- optical
- lead titanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は強誘電体薄膜を有する強誘電体薄膜素
子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a ferroelectric thin film element having a ferroelectric thin film.
一般に強誘電体化合物は、その圧電性を利用し
て、圧電フイルタや振電子など電気部品に広く使
われている。また、電気光学効果を利用したレー
ザの変調素子や光シヤツタにも応用されており、
強誘電体化合物の実用面の応用範囲は広い。 In general, ferroelectric compounds are widely used in electrical components such as piezoelectric filters and vibrators due to their piezoelectric properties. It is also applied to laser modulation elements and optical shutters that utilize the electro-optic effect.
Ferroelectric compounds have a wide range of practical applications.
強誘電体化合物の素体としては、単結晶の作製
が一般には困難であり、またそれが可能であつて
も高価なものが多く、チタン酸バリウム圧電磁器
やPZT磁器、PLZT磁器にみられるように磁器と
して使用される場合が多い。しかし、磁器におい
ては粒子の結晶方向が無秩序であり、本来単結晶
の持つている強誘電的特性の有用性が減少する。
光変調素子や光シヤツタとして使用する場合に
は、素体が透明であることが必要である。物質そ
のものは透明であつても、磁器にした場合、
PLZT磁器やごく一部の組成物以外の強誘電体化
合物は不透明となるので、電気光学効果素子とし
ては単結晶であることが望まれる。 It is generally difficult to produce a single crystal as the element of a ferroelectric compound, and even if it is possible, it is often expensive, as seen in barium titanate piezoelectric ceramics, PZT porcelain, and PLZT porcelain. It is often used as porcelain. However, in porcelain, the crystal orientation of the particles is disordered, which reduces the usefulness of the ferroelectric properties originally possessed by single crystals.
When used as a light modulator or a light shutter, the element body must be transparent. Even if the material itself is transparent, when made into porcelain,
Since ferroelectric compounds other than PLZT porcelain and a very small number of compositions are opaque, a single crystal is desired as an electro-optic effect element.
強誘電体化合物としては100種類以上のものが
発見されており、単結晶での電気的、光学的特性
がよいにもかかわらず、単結晶の作製が困難であ
つたり、単結晶が潮解性を持ち不安定であつたり
して、光変調素子として使用されるものはごく一
部にすぎない。 More than 100 types of ferroelectric compounds have been discovered, and although they have good electrical and optical properties in single crystal form, it is difficult to produce single crystals, and single crystals tend to be deliquescent. Only a few of them are used as optical modulation elements because of their unstable durability.
一方、強誘電体素子の構造の面から見ると最近
の光通信技術の進歩にともなつて光集積回路
(IC)用の光変調素子や光スイツチにするために
薄膜化した強誘電体化合物を有するものが望まれ
ている。強誘電体化合物は本質的に光学的に非等
方的であり、多結晶化すると粒子間の界面で光散
乱するので、光導波回路として使用するために
は、薄膜を単結晶化することが望ましい。チタン
酸鉛は実用的にみてすぐれた強誘電的性質を有す
る物質で、実際に強誘電体磁器として高周波用フ
イルタや焦電効果素子として広く使用されてい
る。 On the other hand, from the perspective of the structure of ferroelectric elements, with recent advances in optical communication technology, thin films of ferroelectric compounds are being used to make optical modulators and optical switches for optical integrated circuits (ICs). What you have is desired. Ferroelectric compounds are essentially optically anisotropic, and when polycrystallineized, light scatters at the interface between particles. Therefore, in order to use it as an optical waveguide circuit, it is necessary to form a thin film into a single crystal. desirable. Lead titanate is a material that has excellent ferroelectric properties from a practical standpoint, and is actually widely used as a ferroelectric ceramic in high-frequency filters and pyroelectric effect elements.
しかし、チタン酸鉛は結晶学的異方性が大きい
こと、鉛の蒸気圧が高いことから良好な単結晶の
作製が困難であることから光学面への応用はなさ
れていない。磁器の作製においても、その結晶学
的異方性が大きいことから、純粋物質の焼結体を
得ることは困難である。 However, lead titanate has not been applied to optical surfaces because it is difficult to produce a good single crystal due to its large crystallographic anisotropy and the high vapor pressure of lead. Even in the production of porcelain, it is difficult to obtain a sintered body of a pure substance due to its large crystallographic anisotropy.
以上のことからわかるように、圧電特性の面か
らも光学的応用の面からも、単結晶化した強誘電
体化合物が望まれており、かつその単結晶が工業
的にみて容易に作製できることが必要である。ま
た、最近の光ICや半導体ICとの組み合わせへの
応用を考えると、薄膜化できることが望ましい。 As can be seen from the above, single-crystal ferroelectric compounds are desired from both the viewpoint of piezoelectric properties and optical applications, and the single crystals can be easily produced from an industrial perspective. is necessary. Furthermore, considering the application in combination with recent optical ICs and semiconductor ICs, it is desirable that the film can be made thin.
発明者らは、これらの要求をみたす強誘電体素
子を検討した結果、酸化マグネシウム単結晶上に
チタン酸鉛をエピタキシヤル成長させた素子が作
製も容易であり、結晶性もよく透光性もすぐれて
いることを発見したものである。 As a result of studying ferroelectric elements that meet these requirements, the inventors found that an element made by epitaxially growing lead titanate on a single crystal of magnesium oxide is easy to fabricate, has good crystallinity, and has good translucency. This is what I discovered to be excellent.
本発明のチタン酸鉛単結晶薄膜は高周波スパツ
タリングで作製した。 The lead titanate single crystal thin film of the present invention was produced by high frequency sputtering.
基板には(100)面にそつてへき開した酸化マ
グネシウム単結晶板を使用し、ヒータ上に固定し
た。ターゲツトには軽く焼結させたチタン酸鉛粉
末を用いた。雰囲気ガスはアルゴンと酸素の混合
気体で、全圧は約5Pa、アルゴンと酸素の混合比
率は90%アルゴンと10%酸素でマグネトロン高周
波スパツタリング法により酸化マグネシウム単結
晶板上に薄膜を形成した。 A magnesium oxide single crystal plate cleaved along the (100) plane was used as the substrate and fixed on a heater. Lightly sintered lead titanate powder was used as the target. The atmospheric gas was a mixture of argon and oxygen, the total pressure was approximately 5 Pa, and the mixture ratio of argon and oxygen was 90% argon and 10% oxygen, and a thin film was formed on a magnesium oxide single crystal plate by magnetron high frequency sputtering method.
基板温度は575℃である。上述のようにして作
製した薄膜をX線マイクロアナライザーで組成比
を分析し、X線回析と電子線回析で結晶の同定、
方位の決定を行なつた。図にこの薄膜のX線回析
図形を示す。 The substrate temperature is 575°C. The composition ratio of the thin film prepared as described above was analyzed using an X-ray microanalyzer, and the crystals were identified using X-ray diffraction and electron beam diffraction.
The direction was determined. The figure shows the X-ray diffraction pattern of this thin film.
図より<100>方向および<001>方向に成長し
ていることがわかる。 From the figure, it can be seen that the growth occurs in the <100> direction and the <001> direction.
一方、電子線回析より回析図形が点状になるこ
とから、エピタキシヤル成長していることが確認
された。基板温度は550℃から700℃の間で変化さ
せても<100>方向もしくは<001>方向にエピタ
キシヤル成長したチタン酸鉛の単結晶薄膜が形成
される。また、雰囲気の全圧2Pa〜20Pa雰囲気の
アルゴンガスと酸素ガスの組成比を100%アルゴ
ン50%アルゴン−50%酸素の範囲で、<100>方向
もしくは<001>方向にエピタキシヤル成長した
チタン酸鉛の単結晶が得られる。いずれの場合に
も無色透明な良好な透光性を持つ膜が得られる。 On the other hand, electron beam diffraction revealed a dotted diffraction pattern, confirming epitaxial growth. Even if the substrate temperature is varied between 550°C and 700°C, a single crystal thin film of lead titanate epitaxially grown in the <100> direction or <001> direction is formed. In addition, titanic acid epitaxially grown in the <100> direction or <001> direction was prepared with a composition ratio of argon gas and oxygen gas of 100% argon, 50% argon - 50% oxygen in an atmosphere with a total pressure of 2 Pa to 20 Pa. A single crystal of lead is obtained. In either case, a colorless and transparent film with good light transmittance can be obtained.
以上の結果から、酸化マグネシウム単結晶の
(100)面上に<100>方向もしくは<001>方向に
結晶成長させた単結晶膜は作製のためのスパツタ
リング条件の範囲が広く、工業的に有利である。 From the above results, single crystal films grown in the <100> direction or <001> direction on the (100) plane of magnesium oxide single crystal can be fabricated over a wide range of sputtering conditions, and are industrially advantageous. be.
電気光学効果素子としての応用を考えたとき、
酸化マグネシウム単結晶は可視光領域で無色透明
であり光学的異方性を有しないので、チタン酸鉛
の電気光学効果で光変調をする場合も利点とな
る。チタン酸鉛の分極可能な方向は<001>方向
と<100>方向であり、光をチタン酸鉛の薄膜面
に対して垂直に通過させる場合にも、面内を光導
波路として使用する場合にも分極方向を光の透過
方向に垂直に選ぶことができるので光変調用とし
ても有利である。 When considering its application as an electro-optic effect element,
Magnesium oxide single crystal is colorless and transparent in the visible light region and has no optical anisotropy, so it is also advantageous when performing light modulation using the electro-optic effect of lead titanate. The directions in which lead titanate can be polarized are the <001> direction and the <100> direction, and both when passing light perpendicularly to the thin film surface of lead titanate and when using the in-plane as an optical waveguide. Also, since the polarization direction can be selected perpendicular to the light transmission direction, it is also advantageous for light modulation.
図は本発明の実施例における強誘電体薄膜素子
のX線回折図である。
The figure is an X-ray diffraction diagram of a ferroelectric thin film element in an example of the present invention.
Claims (1)
100>方向もしくは<001>方向に結晶成長させた
チタン酸鉛薄膜を有することを特徴とする強誘電
体薄膜素子。1 On the (100) plane of a magnesium oxide single crystal
A ferroelectric thin film element comprising a lead titanate thin film whose crystals are grown in the 100> direction or the <001> direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57070047A JPS58186105A (en) | 1982-04-26 | 1982-04-26 | Ferrodielectric thin film and ferrodielectric element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57070047A JPS58186105A (en) | 1982-04-26 | 1982-04-26 | Ferrodielectric thin film and ferrodielectric element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58186105A JPS58186105A (en) | 1983-10-31 |
| JPH0311487B2 true JPH0311487B2 (en) | 1991-02-18 |
Family
ID=13420260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57070047A Granted JPS58186105A (en) | 1982-04-26 | 1982-04-26 | Ferrodielectric thin film and ferrodielectric element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58186105A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6083387A (en) * | 1983-10-14 | 1985-05-11 | Hitachi Ltd | array piezoelectric transducer |
| JPS61274342A (en) * | 1985-05-29 | 1986-12-04 | Ube Ind Ltd | Ferroelectric element and manufacture thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138813A (en) * | 1980-03-31 | 1981-10-29 | Fujitsu Ltd | Method of forming lead titanate thin film |
-
1982
- 1982-04-26 JP JP57070047A patent/JPS58186105A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58186105A (en) | 1983-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS62205266A (en) | Ferroelectric thin film element and its production | |
| JPH0311487B2 (en) | ||
| WO2010098227A1 (en) | Optical modulation material and method for producing same | |
| JP3079509B2 (en) | Thin film laminated crystal and manufacturing method thereof | |
| JPS60172103A (en) | Ferrodielectric thin film | |
| JPS6241311B2 (en) | ||
| JPS5935098A (en) | Ferroelectric thin film | |
| JPS60175308A (en) | Ferrodielectric thin film | |
| JP2532410B2 (en) | Dielectric thin film element | |
| Meitzler | Piezoelectric transducer materials and techniques for ultrasonic devices operating above 100 MHz | |
| JP2816370B2 (en) | Magneto-optical material | |
| JPS5942474B2 (en) | Method for manufacturing piezoelectric thin film | |
| JPS59141104A (en) | Method of producing ferrodielectric thin film | |
| JPS595560B2 (en) | LiNb↓1-xTaxo↓3 single crystal film manufacturing method | |
| JPH05347438A (en) | Ferroelectric thin-film element | |
| US20250130449A1 (en) | Electro-optical component and optical modulation component | |
| JPS6323128A (en) | Optical spatial modulation element | |
| JPS63260895A (en) | Production of plzt crystal thin film | |
| JPH04132615A (en) | Thin film of bismuth compound having laminar structure and its production | |
| JPH0269395A (en) | Production of thin film of lithium oxide-based single crystal | |
| JPS62138397A (en) | Magnetic garnet material for magneto-optical elements | |
| JPS59137318A (en) | Manufacture of oriented thin film element of ferroelectric substance | |
| JPS5829280B2 (en) | LINB1-XTAX03 | |
| JPH0781183B2 (en) | Method for producing oriented metal thin film | |
| JPS636519B2 (en) |