JPH0311623A - Furnace tube for heat treatment of semiconductor - Google Patents

Furnace tube for heat treatment of semiconductor

Info

Publication number
JPH0311623A
JPH0311623A JP14505989A JP14505989A JPH0311623A JP H0311623 A JPH0311623 A JP H0311623A JP 14505989 A JP14505989 A JP 14505989A JP 14505989 A JP14505989 A JP 14505989A JP H0311623 A JPH0311623 A JP H0311623A
Authority
JP
Japan
Prior art keywords
thermocouple
tube
temperature
fins
pipe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14505989A
Other languages
Japanese (ja)
Inventor
Tatsuo Nozawa
野沢 辰雄
Kazunori Meguro
目黒 和教
Shunkichi Sato
佐藤 俊吉
Takahiro Tabei
貴浩 田部井
Takeshi Hirata
平田 毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP14505989A priority Critical patent/JPH0311623A/en
Publication of JPH0311623A publication Critical patent/JPH0311623A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable accurate and simple measurement of a temperature in the vicinity of a wafer setting section by providing a thermocouple insertion pipe separately from a gas introduction pipe, by inserting thereinto a thermocouple together with a thermocouple protection pipe and by providing a number of heat-radiating fins outside the insertion pipe. CONSTITUTION:A thermocouple insertion pipe 15 is provided near a gas introduction pipe 9, and a number of heat-radiating (cooling) fins 16 are provided outside the middle part thereof, while a thermocouple protection pipe 19 is inserted inside the thermocouple insertion pipe 15. By inserting a thermocouple into the thermocouple protection pipe 19, a temperature in close vicinity to wafers 33 can be measured. Thereby the temperature can be measured accurately as occasion calls, the temperature of a flange part is lowered by the heat- radiating function of the fins, and excellent airtightness is obtained.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は半導体熱処理用の炉芯管に関し、特に熱電対
の取り付は部分の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to a furnace core tube for semiconductor heat treatment, and in particular relates to improvements in the attachment of thermocouples.

従来の技術 半導体製造素子の集積度が64KB→256KB→IM
B→4MBと増加するに従い、熱処理時における高精度
の温度制御が要求されるようになってきた。このためウ
ェハ未挿入状態での炉内温度測定のみならずウェハを挿
入した状態での炉内温度測定が要求されている。
Conventional technology: The degree of integration of semiconductor manufacturing elements has increased from 64KB to 256KB to IM.
As the size increases from B to 4MB, highly accurate temperature control during heat treatment is required. Therefore, it is required not only to measure the temperature inside the furnace with no wafer inserted, but also to measure the temperature inside the furnace with the wafer inserted.

そこで、炉芯管のウェハ積載ボートの出入部より熱電対
を挿入してより高精度の温度制御を行う試みが成されて
いた。
Therefore, attempts have been made to achieve more precise temperature control by inserting a thermocouple from the entrance/exit of the wafer loading boat in the furnace core tube.

発明が解決しようとする問題点 しかし、炉芯管のウェハ積載ボートの出入部により熱電
対を挿入するのは操作が煩雑であり、簡便に正確な温度
測定をする方法が望まれでいた。
Problems to be Solved by the Invention However, inserting a thermocouple through the inlet/outlet portion of the wafer loading boat in the furnace core tube is a complicated operation, and a method for easily and accurately measuring temperature has not been desired.

発明の目的 このような従来技術の問題点に鑑み、本発明は炉芯管内
部にウェハを挿填して熱電対を挿入し炉芯管内部のウェ
ハ設置部付近の温度が正確かつ簡便に測定できる半導体
熱処理用炉芯管を提供することを特徴とする特 許 発明の要旨 前述の目的を達成するために、この発明は請求項1に記
載の半導体熱処理用炉芯管を要旨としている。
Purpose of the Invention In view of the problems of the prior art, the present invention provides a method for accurately and easily measuring the temperature near the wafer installation part inside the furnace core tube by inserting a wafer into the furnace core tube and inserting a thermocouple. SUMMARY OF THE PATENT INVENTION Which is characterized by providing a furnace core tube for semiconductor heat treatment that can achieve the above-mentioned object.In order to achieve the above-mentioned object, the present invention has a core tube for semiconductor heat treatment as set forth in claim 1.

問題点を解決するための手段 本発明の半導体熱処理用炉芯管はガス導入管を持つ炉芯
管において、ガス導入管とは別に熱電対挿入管を設けそ
こに熱電対保護管と共に熱電対を挿入する構成にし、か
つ熱電対挿入管の外側に多数の放熱フィンを設けたこと
を特徴とする。
Means for Solving the Problems The furnace core tube for semiconductor heat treatment of the present invention is a furnace core tube having a gas introduction tube, and a thermocouple insertion tube is provided separately from the gas introduction tube, and the thermocouple is inserted therein together with a thermocouple protection tube. The thermocouple is inserted into the thermocouple insertion tube, and a large number of heat radiation fins are provided on the outside of the thermocouple insertion tube.

炉芯管、熱電対保護管及びフィンの材質は共に石英ガラ
ス、SiC含浸質S i C,自焼結SiC等で構成す
る。特にSi含浸質SiCあるいは自焼結SiCで構成
されたものは、石英ガラスに比べて1200℃以上の高
温における使用が可能である。
The materials of the furnace core tube, thermocouple protection tube, and fins are all made of quartz glass, SiC-impregnated SiC, self-sintered SiC, and the like. In particular, those made of Si-impregnated SiC or self-sintered SiC can be used at higher temperatures of 1200° C. or higher than quartz glass.

熱電対保護管は、熱電対挿入管に挿入することにより支
持する。
The thermocouple protection tube is supported by being inserted into the thermocouple insertion tube.

放熱フィンは熱電対挿入管と一体的に設けるか、嵌合又
は接着する。
The radiation fins are provided integrally with, fitted with, or bonded to the thermocouple insertion tube.

放熱フィンの径は熱電対挿入管の径の1゜5倍以上ある
ことが望ましい。1.5倍未満では十分な冷却効果が得
られない。また放熱フィンのピッチは10mm以上ある
ことが望ましい。10mm未満では互いに干渉し、十分
な冷却効果を得ることができない。
It is desirable that the diameter of the radiation fin is at least 1.5 times the diameter of the thermocouple insertion tube. If it is less than 1.5 times, a sufficient cooling effect cannot be obtained. Further, it is desirable that the pitch of the radiation fins is 10 mm or more. If it is less than 10 mm, they will interfere with each other and a sufficient cooling effect cannot be obtained.

作用効果 熱電対挿入管を用いて熱電対を設置することにより、ウ
ェハを挿入した状態で炉芯管内のウェハ設置部付近の温
度を随時正確に測定することができる。
Effect: By installing a thermocouple using a thermocouple insertion tube, the temperature near the wafer installation part in the furnace core tube can be accurately measured at any time with the wafer inserted.

さらに、熱電対挿入管の外側に設けた放熱フィンの放熱
作用により、熱電対挿入管端部の温度を下げることがで
き、例えばテフロン製のOリングを用いてシールを行う
ことが可能である。従って良好な気密性を得ることがで
きる。
Further, the temperature at the end of the thermocouple insertion tube can be lowered by the heat radiation effect of the radiation fins provided on the outside of the thermocouple insertion tube, and it is possible to perform sealing using, for example, an O-ring made of Teflon. Therefore, good airtightness can be obtained.

実  施  例 以下、図面を参照して本発明による半導体熱処理用炉芯
管の実施例を説明する。
Embodiments Hereinafter, embodiments of the furnace core tube for semiconductor heat treatment according to the present invention will be described with reference to the drawings.

第1図は炉芯管10の上面図である。炉芯管10は一方
の端部にガス導入部12、反対側の端部にガス排気部1
1、それらの端部の間に位置する均熱部から構成される
FIG. 1 is a top view of the furnace core tube 10. The furnace core tube 10 has a gas introduction part 12 at one end and a gas exhaust part 1 at the opposite end.
1. Consists of a soaking section located between these ends.

排気部11は、通常わずかなテーノ々を有し、そこに排
気キャップ20がはめ込まれる。排気キャップ20は排
気管23を有し、排気管23の端部にはフランジ21が
設けである。
The exhaust section 11 usually has a few grooves, into which the exhaust cap 20 is fitted. The exhaust cap 20 has an exhaust pipe 23, and the end of the exhaust pipe 23 is provided with a flange 21.

また、排気管の外側には多数の放熱(冷却)フィン22
が設けである。排気キヤ・ノブ20を取り外して、半導
体ウエノ1の設置を行う構成になっている。
In addition, there are many heat radiation (cooling) fins 22 on the outside of the exhaust pipe.
is the provision. The configuration is such that the exhaust canister knob 20 is removed and the semiconductor wafer 1 is installed.

ガス導入部12の中央にはガス導入管9カ(設けである
。ガス導入管の端部にはフランジ13が形成しである。
A gas introduction pipe 9 is provided in the center of the gas introduction section 12. A flange 13 is formed at the end of the gas introduction pipe.

また、ガス導入管の外側には多数の放熱フィン14が設
けである。
Further, a large number of heat radiation fins 14 are provided on the outside of the gas introduction pipe.

ガス導入管9の近くには熱電対挿入管15が設けである
。第2図は炉芯管の端面図で熱電対挿入管15の配置を
示している。
A thermocouple insertion tube 15 is provided near the gas introduction tube 9. FIG. 2 is an end view of the furnace core tube, showing the arrangement of the thermocouple insertion tube 15.

第3図を参照して熱電対挿入管15について詳しく説明
する。熱電対挿入管15は全体的に円筒形状をしていて
、端部にフランジ17が設けである。また熱電対挿入管
15中間部の外側には多数の放熱(冷却)フィン16が
設けである。フィン16はディスク形状である。このフ
ィン16は熱電対挿入管15と一体的に構成してもいい
し、別々に作った後に嵌合あるいは、接着することも可
能である。
The thermocouple insertion tube 15 will be explained in detail with reference to FIG. The thermocouple insertion tube 15 has a cylindrical shape as a whole, and a flange 17 is provided at the end. Further, a large number of heat radiation (cooling) fins 16 are provided on the outside of the intermediate portion of the thermocouple insertion tube 15. The fins 16 are disc-shaped. The fins 16 may be constructed integrally with the thermocouple insertion tube 15, or may be made separately and then fitted or bonded together.

フランジ17も同様である。The same applies to the flange 17.

第3図を参照する。熱電対保護管19が熱電対挿入管1
5の内側に挿入されている。熱電対保護管1.9は熱電
対による炉内の汚染を防ぎ、かつその中に設置した熱電
対(図示ぜず)を保護する働きもする。熱電対保護管1
9は全体的に円筒形をしていて片端を封じた構造であり
、一端にフランジ24を有する。
See Figure 3. Thermocouple protection tube 19 is thermocouple insertion tube 1
It is inserted inside 5. The thermocouple protection tube 1.9 prevents the thermocouple from contaminating the inside of the furnace and also serves to protect the thermocouple (not shown) installed therein. Thermocouple protection tube 1
9 has an overall cylindrical shape with one end sealed, and has a flange 24 at one end.

熱電対挿入管15のフランジ17と熱電対保護管19の
フランジ24の間にはテフロン製0リングが設置してあ
り、気密性を高めている。両者はたとえばネジ止めによ
り結合する。
A Teflon O-ring is installed between the flange 17 of the thermocouple insertion tube 15 and the flange 24 of the thermocouple protection tube 19 to improve airtightness. The two are connected, for example, by screwing.

第4図を参照する。第4図では炉芯管10が炉体32に
設置してあり、炉芯管10のまわりにヒータ31が設置
されている。炉芯管10の中には、ウェハ積載用治具3
0を介してウェハ33が設置しである。熱電対(図示せ
ず)を熱電対保護管19内に挿入することにより、ウェ
ハ33のすぐ近くの温度を測定できる。この実施例では
熱電対保護管19がウェハ33の左右ななめ下方に配置
される。
Please refer to FIG. In FIG. 4, a furnace core tube 10 is installed in a furnace body 32, and a heater 31 is installed around the furnace core tube 10. Inside the furnace core tube 10 is a wafer loading jig 3.
The wafer 33 is installed through the wafer 0. By inserting a thermocouple (not shown) into thermocouple protection tube 19, the temperature in the immediate vicinity of wafer 33 can be measured. In this embodiment, thermocouple protection tubes 19 are arranged below the wafer 33 diagonally to the left and right.

しかし、熱電対挿入管を別の位置に設けることにより、
保護管19を他の位置に配置できることは明らかである
However, by providing the thermocouple insertion tube in a different position,
It is clear that the protective tube 19 can be arranged in other positions.

炉芯管、熱電対保護管及びフィンはSi含浸質SiCに
て構成した。
The furnace core tube, thermocouple protection tube, and fins were made of Si-impregnated SiC.

第5図を参照する。第5図ではウェハ33が炉芯管10
の中央に位置されない場合においても、熱電対挿入管1
5を上部に設けることによりウェハ33を挿入した状態
でウェハ33のすぐ近くの温度を測定できる。
Please refer to FIG. In FIG. 5, the wafer 33 is the furnace core tube 10.
Even if the thermocouple insertion tube 1 is not located in the center of
5 at the top, the temperature in the immediate vicinity of the wafer 33 can be measured with the wafer 33 inserted.

第6図を参照する。第6図ではウェハ積載用治具34を
介してウェハ33を設置した場合の例を示す。
Please refer to FIG. FIG. 6 shows an example in which a wafer 33 is installed via a wafer loading jig 34.

次に熱電対挿入管15に放熱フィンを設けない場合と設
けた場合の、フランジ部の温度及び炉芯管使用時におけ
るガスリークの有無を実験した。その結果を第1表に示
す。この結果フィンを設けない場合には、フランジ部の
温度が高く、ガスリークが起ることがわがった。フィン
を設けた場合にはフィンの放熱作用によってフランジ部
の温度が下がり、良好な気密性が得られる。
Next, an experiment was conducted to determine the temperature of the flange portion and the presence or absence of gas leakage when the furnace core tube was used, in the case where the thermocouple insertion tube 15 was not provided with radiation fins and when it was provided with radiation fins. The results are shown in Table 1. As a result, it was found that when fins were not provided, the temperature at the flange was high and gas leakage occurred. When fins are provided, the temperature of the flange portion decreases due to the heat dissipation effect of the fins, and good airtightness can be obtained.

なお、本発明は前述の実施例に限定されない。例えば熱
電対挿入管は1本のみ設けてもいいし、3本以上設けて
もいい。また、その設置場所は、ガス導入管の近くに限
らず他の場所−排気キャップなど−に設置してもよい。
Note that the present invention is not limited to the above-described embodiments. For example, only one thermocouple insertion tube may be provided, or three or more thermocouple insertion tubes may be provided. Further, the installation location is not limited to the vicinity of the gas introduction pipe, but may be installed at other locations such as an exhaust cap.

さらにフィンの形状や枚数は自由に設定できる。Furthermore, the shape and number of fins can be freely set.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明による半導体熱処理用炉芯管の実施例を
示す上面図、第2図は半導体熱処理用炉芯管の端面図、
第3図は熱電対挿入管を示す一部断面をとった拡大図、
第4図、第5図、第6図はウェハを設置した炉芯管を示
す各実施例の断面図である。 9・・・・・・・・・ガス導入管 10・・・・・・炉芯管 15・・・・・・熱電対挿入管 16・・・・・・フィン 代  理  人
FIG. 1 is a top view showing an embodiment of the furnace core tube for semiconductor heat treatment according to the present invention, FIG. 2 is an end view of the furnace core tube for semiconductor heat treatment,
Figure 3 is an enlarged partially cross-sectional view showing the thermocouple insertion tube;
FIG. 4, FIG. 5, and FIG. 6 are cross-sectional views of each embodiment showing a furnace core tube in which a wafer is installed. 9... Gas introduction pipe 10... Furnace core tube 15... Thermocouple insertion pipe 16... Fin agent person

Claims (1)

【特許請求の範囲】 熱電対挿入管を設け熱電対を挿入する構成 にし、かつ熱電対挿入管の外側に多数の放熱フィンを設
けたことを特徴とする半導体熱処理用炉芯管。
[Scope of Claims] A furnace core tube for semiconductor heat treatment, characterized by having a structure in which a thermocouple insertion tube is provided and a thermocouple is inserted therein, and a large number of radiation fins are provided on the outside of the thermocouple insertion tube.
JP14505989A 1989-06-09 1989-06-09 Furnace tube for heat treatment of semiconductor Pending JPH0311623A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14505989A JPH0311623A (en) 1989-06-09 1989-06-09 Furnace tube for heat treatment of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14505989A JPH0311623A (en) 1989-06-09 1989-06-09 Furnace tube for heat treatment of semiconductor

Publications (1)

Publication Number Publication Date
JPH0311623A true JPH0311623A (en) 1991-01-18

Family

ID=15376429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14505989A Pending JPH0311623A (en) 1989-06-09 1989-06-09 Furnace tube for heat treatment of semiconductor

Country Status (1)

Country Link
JP (1) JPH0311623A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684815A (en) * 1992-01-06 1994-03-25 Samsung Electron Co Ltd Tube device for semiconductor manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648130A (en) * 1979-09-26 1981-05-01 Toshiba Ceramics Co Ltd Structure of furnace core tube for semiconductor diffusion
JPS58418B2 (en) * 1973-10-05 1983-01-06 バイエル アクチエンゲゼルシヤフト Synkina imidazolyl
JPS6449220A (en) * 1987-08-19 1989-02-23 Tel Sagami Ltd Heat treatment furnace

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58418B2 (en) * 1973-10-05 1983-01-06 バイエル アクチエンゲゼルシヤフト Synkina imidazolyl
JPS5648130A (en) * 1979-09-26 1981-05-01 Toshiba Ceramics Co Ltd Structure of furnace core tube for semiconductor diffusion
JPS6449220A (en) * 1987-08-19 1989-02-23 Tel Sagami Ltd Heat treatment furnace

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0684815A (en) * 1992-01-06 1994-03-25 Samsung Electron Co Ltd Tube device for semiconductor manufacturing

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