JPH03117559A - Manufacture of highly flat substrate and polishing machine - Google Patents

Manufacture of highly flat substrate and polishing machine

Info

Publication number
JPH03117559A
JPH03117559A JP1253281A JP25328189A JPH03117559A JP H03117559 A JPH03117559 A JP H03117559A JP 1253281 A JP1253281 A JP 1253281A JP 25328189 A JP25328189 A JP 25328189A JP H03117559 A JPH03117559 A JP H03117559A
Authority
JP
Japan
Prior art keywords
surface plate
substrate
polishing
high flatness
polishing machine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1253281A
Other languages
Japanese (ja)
Inventor
Yorito Fujimura
藤村 頼人
Yukio Shibano
由紀夫 柴野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP1253281A priority Critical patent/JPH03117559A/en
Publication of JPH03117559A publication Critical patent/JPH03117559A/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は高平坦度基板の製造方法、特に高平坦度で厚さ
バラツキのない石英マスク基板などの製造方法およびこ
れに使用される研摩機に関するものである。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for manufacturing a substrate with high flatness, particularly a method for manufacturing a quartz mask substrate with high flatness and uniform thickness, and a polishing machine used therein. It is related to.

(従来の技術) 従来、各種の基板、例えば合成石英製のマクス基板など
を研摩定盤を用いて両面研摩する場合には、キャリアと
太陽ギア、インターナルギアの間で基板を遊星運動させ
ることによって行なわれている。
(Prior art) Conventionally, when polishing both sides of various substrates, such as synthetic quartz macus substrates, using a polishing surface plate, the substrate is moved in a planetary manner between a carrier, a sun gear, and an internal gear. It is being done.

(発明が解決しようとする課題) しかし、この種の研摩定盤を用いて基板を研摩すると、 l)定盤の太陽ギア側とインターナルギア側では周速度
が異なるために、基板をキャリアに仕込む位置によって
基板各点と定盤との相対速度に差異が生じ、これによっ
て内周側と外周側の圧力分布に差異が生じる。
(Problem to be Solved by the Invention) However, when a substrate is polished using this type of polishing surface plate, l) Since the peripheral speeds are different between the sun gear side and the internal gear side of the surface plate, it is difficult to load the substrate into the carrier. A difference occurs in the relative velocity between each point on the substrate and the surface plate depending on the position, and this causes a difference in pressure distribution between the inner circumferential side and the outer circumferential side.

2)キャリアは太陽ギア、インターナルギアによって公
転、自転をし、これに仕込んだ基板は遊星運動するが、
内外周差によって移動距離に差異・が生じる。
2) The carrier revolves and rotates due to the sun gear and internal gear, and the substrate placed in it moves planetarily.
Differences in travel distance occur due to the difference between the inner and outer circumferences.

ということから、この方法で得られる基板には基板を仕
込む位置にもよるが、研摩量が異なり、平坦度、厚さに
バラツキが生じるという不利がある。
Therefore, the substrates obtained by this method have the disadvantage that the amount of polishing varies depending on the position where the substrate is placed, and variations in flatness and thickness occur.

そのため、高平坦度で厚さバラツキのない基板を得るた
めには作業途中で厚さを測定して仕込み位置を変えたり
、1800反転させるという方法が採られているが、こ
れには基板全体の厚さを測定したり、仕込み変えなどの
作業をする必要があるために多大の手間がかり、時間的
なロスも大きいという欠点がある。
Therefore, in order to obtain a substrate with high flatness and no thickness variation, the thickness is measured during the work and the preparation position is changed or the substrate is turned over by 1800 degrees. The drawback is that it requires a lot of effort and time, as it requires work such as measuring the thickness and changing the preparation.

(課題を解決するための手段) 本発明はこのような、不利、欠点を除去することのでき
る高平坦度基板の製造方法および研摩機に関するもので
、これは外周側を任意形状に切欠いた定盤を用いて基板
を両面研摩することを特徴とする高平坦度基板の製造方
法、および太陽ギアとインターナルギアを用いて研摩す
る両面研摩機において、定盤がその外側面に任意形状の
切欠きを設けたものであることを特徴とする両面研摩機
に関するものである。
(Means for Solving the Problems) The present invention relates to a method for manufacturing a high flatness substrate and a polishing machine that can eliminate such disadvantages and drawbacks. A method for producing a high flatness substrate characterized by polishing both sides of the substrate using a plate, and a double-sided polishing machine using a sun gear and an internal gear, in which the surface plate has a notch of an arbitrary shape on its outer surface. The present invention relates to a double-sided polishing machine characterized by being equipped with.

すなわち、本発明者らは高平坦度で厚さバラツキのない
基板を製造する方法および研摩機について種々検討した
結果、ここに使用される定盤の外周側を例えば楔形状に
切欠いたものとすると、その部分の圧力が低減されて内
外周で生じていた圧力勾配が均一化され、結果において
基板と定盤との相対速度が均一化されるし、内外周差に
よる内周側と外周側の圧力分布も均一化され、内外周差
による移動距離も均一化されるので、基板の高平坦化が
画られ、厚さバラツキの少ないものが得られるよになる
ということを見出すと共に、これによれば仕込み変えな
どの作業が不要となるので作業時間を短縮することがで
きるし、切欠き溝によって砥粒の流れが活性化されるの
で研摩速度を向上させることが可能になるということを
確認して本発明を完成させた。
That is, the inventors of the present invention have studied various methods and polishing machines for manufacturing substrates with high flatness and uniform thickness, and have found that if the outer circumferential side of the surface plate used here is cut out in the shape of a wedge, for example, , the pressure in that area is reduced and the pressure gradient that was occurring on the inner and outer circumferences is made uniform, and as a result, the relative speed between the substrate and the surface plate is equalized, and the difference between the inner and outer circumferences due to the difference between the inner and outer circumferences is It was discovered that the pressure distribution is made uniform, and the movement distance due to the difference between the inner and outer circumferences is also made uniform, so the substrate can be highly flattened and a substrate with less variation in thickness can be obtained. We confirmed that the work time can be shortened because there is no need to change the preparation, and that the notched grooves activate the flow of abrasive grains, making it possible to increase the polishing speed. The present invention was completed.

以下にこれをさらに詳述する。This will be explained in further detail below.

(作用) 本発明の高平坦度基板の製造方法は外周部を切欠いた定
盤を用いることによって行なわれる。
(Function) The method of manufacturing a high flatness substrate according to the present invention is carried out by using a surface plate having a cutout on the outer periphery.

第1図は本発明で使用される研摩定盤を研摩機上方から
見た平面図である。この研摩機は太陽ギアとインターナ
ルギア2によってキャリア3が連動運動し、このキャリ
ア3に仕込まれた基板6が遊星運動をするというもので
あり、通常この定盤4では太陽ギア側とインターナルギ
ア側でその周速度が異なることから基板6の各点と定盤
では相対速度に差異が生じるし、この相対速度と密接な
関係にある圧力分布も内周側と外周側とでは差異が生じ
ている。
FIG. 1 is a plan view of the polishing surface plate used in the present invention, viewed from above the polishing machine. In this polishing machine, a carrier 3 moves in conjunction with a sun gear and an internal gear 2, and a substrate 6 placed in this carrier 3 moves in a planetary manner. Since the circumferential speeds differ, a difference occurs in the relative speed between each point of the substrate 6 and the surface plate, and the pressure distribution, which is closely related to this relative speed, also differs between the inner and outer circumferential sides. .

しかし、本発明にしたがってこの定盤4に図示したよう
に切欠き5を設けるとこれらの相対速度差、圧力分布差
が低減され、相対速度、圧力分布、移動距離が基板6の
各点で均一化されるので、これによれば高平坦度で厚さ
のバラツキのない基板を容易に製造することができると
いう有利性が与えられるし、切欠き5を設けると砥粒の
流れが活性化されるので研摩速度を向上させることがで
きるという利益も与えられる。
However, if the surface plate 4 is provided with a notch 5 as shown in the figure according to the present invention, these relative speed differences and pressure distribution differences are reduced, and the relative speed, pressure distribution, and moving distance are uniform at each point on the substrate 6. This gives the advantage that it is possible to easily manufacture a substrate with high flatness and no variation in thickness, and the provision of the notches 5 activates the flow of abrasive grains. It also has the benefit of increasing the polishing speed.

なお、この切欠き5の形状は図では楔形状とされている
が、これは円板状であフてもよいし、この切欠き5はそ
の数を増減させればこの切欠きによる効果を容易に調整
することができるという利便性が与えられる。
Note that although the shape of this notch 5 is wedge-shaped in the figure, it may also be disc-shaped, and the effect of this notch can be improved by increasing or decreasing the number of notches 5. It provides the convenience of being easily adjustable.

(実施例) つぎに本発明の実施例をあげる。(Example) Next, examples of the present invention will be given.

実施例 研摩機として14Bポリッシュ機を、研摩クロスとして
1次ポリッシュ用クロスを使用することとし、この研摩
機についてはその上下定盤(直径985mm)に第1図
に示したような楔形状の切欠きを140mmの深さに2
0個設けた。
A 14B polishing machine was used as the example polishing machine, and a primary polishing cloth was used as the polishing cloth.This polishing machine had wedge-shaped cuts as shown in Fig. 1 on its upper and lower surface plates (diameter 985 mm). Cut the notch to a depth of 140mm 2
0 pieces were set.

この定盤上に仕込んだキャリア内には一辺の長さが12
5m−の正方形で厚さが2.3a+mであり、1次ポリ
ッシュの前工程であるラップ研摩で平坦度6〜8μm、
厚さバラツキ6μm程度とされた合成石英製のマスク基
板を仕込み、この研摩機に研摩剤として10重量%の酸
化セリウムを仕込み、研摩荷重100g/cm2という
条件でこの基板を研摩したところ、平坦度が1〜2μm
で厚さバラツキが1μm以下である基板が得られ、この
ときの加工速度は0.71μm/分であった。
The length of each side is 12 in the carrier placed on this surface plate.
It is a 5m-square with a thickness of 2.3a+m, and the flatness is 6-8μm by lap polishing, which is a pre-process of primary polishing.
A synthetic quartz mask substrate with a thickness variation of about 6 μm was prepared, and this polishing machine was charged with 10% by weight of cerium oxide as an abrasive. When this substrate was polished under the conditions of a polishing load of 100 g/cm2, the flatness was is 1 to 2 μm
A substrate having a thickness variation of 1 μm or less was obtained, and the processing speed at this time was 0.71 μm/min.

しかし、比較のためにこの定盤に切欠きを設けないで上
記と同様の研摩を行なったところ、得られた基板は平坦
度が5〜6μmで厚さバラツキが5μmであり、その加
工速度も0.63μIlZ分であり、本発明によれば高
平坦度で厚さバラツキの小さいものが早い速度で得られ
ることが確認された。
However, for comparison, when the same polishing as above was performed without providing a notch on this surface plate, the obtained substrate had a flatness of 5 to 6 μm, a thickness variation of 5 μm, and the processing speed was also low. It was confirmed that according to the present invention, products with high flatness and small thickness variations can be obtained at a high speed.

(発明の効果) 本発明は高平坦度基板の製造方法および研摩機に関する
ものであり、これは前記したように外側を任意形状に切
欠いた定盤を用いて基板を両面研摩するもの、また太陽
ギアとインターナルギアに4゜ より公転および自転するキャリアを用いて研摩する両面
研摩機において、定盤がその外側部に任意形状の切欠き
を設けた研摩機に関するものであり、この切欠きを設け
た定盤を使用するとその部分の圧力が低減されて内外周
で生じていた圧力勾配が均一化され、結果において基板
と定盤との相対速度が均一化され、内外周差による内周
側と外周側との圧力分布も均一化され、さらには内外周
差による移動距離も均一化されるので、基板の高平坦化
が画られ、厚さのバラツキの少ない基板が容易に、かつ
短時間で得られるという有利性が与えられる。
(Effects of the Invention) The present invention relates to a method of manufacturing a high flatness substrate and a polishing machine, which polishes both sides of a substrate using a surface plate with an arbitrary shape cut out on the outside as described above, and a polishing machine that polishes both sides of a substrate using a surface plate with an arbitrary shape cut out on the outside as described above. This is a double-sided polishing machine that polishes gears and internal gears using a carrier that revolves and rotates at an angle of 4 degrees. By using a surface plate with a flat surface, the pressure in that area is reduced and the pressure gradient that was occurring on the inner and outer peripheries is equalized, and as a result, the relative speed between the substrate and the surface plate is equalized, and the difference between the inner and outer circumferences due to the difference between the inner and outer circumferences is equalized. The pressure distribution with the outer circumference is made uniform, and the moving distance due to the difference between the inner and outer circumferences is also made uniform, so the substrate can be highly flattened and the substrate with less variation in thickness can be easily and quickly created. It gives you the advantage of being able to get it.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明で使用される研摩定盤を研摩機上方から
見た平面図を示したものである。 1・・・太陽ギア 2・・・インターナルギア3・・・
キャリア 4・・・定盤 5・・・切欠き  6・・・基板
FIG. 1 shows a plan view of the polishing surface plate used in the present invention, viewed from above the polishing machine. 1...Sun gear 2...Internal gear 3...
Carrier 4... Surface plate 5... Notch 6... Board

Claims (1)

【特許請求の範囲】 1、外周側を任意形状に切欠いた定盤を用いて両面研摩
することを特徴とする高平坦度基板の製造方法。 2、切欠きが楔形である請求項1に記載の高平坦度基板
の製造方法。 3、定盤が上下定盤である請求項1に記載の高平坦度基
板の製造方法。 4、ポリッシュクロスを切欠くことよりなる請求項1に
記載の高平坦度基板の製造方法。5、ラッピング定盤を
切欠くことよりなる請求項1に記載の高平坦度基板の製
造方法。 6、太陽ギアとインターナルギアにより公転および自転
するキャリアを用いて研摩する両面研摩機において、定
盤がその外周側に任意形状の切欠きを設けたものである
ことを特徴とする両面研摩機。
[Claims] 1. A method for manufacturing a high flatness substrate, which comprises polishing both sides using a surface plate whose outer circumferential side is cut into an arbitrary shape. 2. The method of manufacturing a high flatness substrate according to claim 1, wherein the notch is wedge-shaped. 3. The method for manufacturing a high flatness substrate according to claim 1, wherein the surface plate is an upper and lower surface plate. 4. The method of manufacturing a high flatness substrate according to claim 1, which comprises cutting out a polishing cloth. 5. The method of manufacturing a high flatness substrate according to claim 1, which comprises cutting out a lapping surface plate. 6. A double-sided polishing machine that performs polishing using a carrier that revolves and rotates on its own axis by a sun gear and an internal gear, characterized in that the surface plate is provided with a notch of an arbitrary shape on its outer periphery.
JP1253281A 1989-09-28 1989-09-28 Manufacture of highly flat substrate and polishing machine Pending JPH03117559A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1253281A JPH03117559A (en) 1989-09-28 1989-09-28 Manufacture of highly flat substrate and polishing machine

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1253281A JPH03117559A (en) 1989-09-28 1989-09-28 Manufacture of highly flat substrate and polishing machine

Publications (1)

Publication Number Publication Date
JPH03117559A true JPH03117559A (en) 1991-05-20

Family

ID=17249102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1253281A Pending JPH03117559A (en) 1989-09-28 1989-09-28 Manufacture of highly flat substrate and polishing machine

Country Status (1)

Country Link
JP (1) JPH03117559A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317750A1 (en) * 1992-05-27 1993-12-02 Micron Technology Inc Device for planarizing semiconductor wafers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157470A (en) * 1979-05-22 1980-12-08 Toshiba Corp Abrasive jig
JPS61117064A (en) * 1984-11-14 1986-06-04 Toshiba Corp Both-surface polishing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55157470A (en) * 1979-05-22 1980-12-08 Toshiba Corp Abrasive jig
JPS61117064A (en) * 1984-11-14 1986-06-04 Toshiba Corp Both-surface polishing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317750A1 (en) * 1992-05-27 1993-12-02 Micron Technology Inc Device for planarizing semiconductor wafers

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