JPH03140465A - Production of thin oxide film with large area - Google Patents
Production of thin oxide film with large areaInfo
- Publication number
- JPH03140465A JPH03140465A JP1280946A JP28094689A JPH03140465A JP H03140465 A JPH03140465 A JP H03140465A JP 1280946 A JP1280946 A JP 1280946A JP 28094689 A JP28094689 A JP 28094689A JP H03140465 A JPH03140465 A JP H03140465A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- large area
- sputtering
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002887 superconductor Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、大面積酸化物薄膜の作製方法に関する。より
詳細には、酸素を結晶中に十分に含んだ酸化物で１００
ＯＩＩＤ角程度の大面積の薄膜を作製する方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for making large area oxide thin films. More specifically, it is an oxide containing sufficient oxygen in the crystal.
This invention relates to a method for producing a thin film with a large area on the order of OIID angle.
従来の技術
薄膜を作製する方法には各種あるが、スパッタリング法
は、蒸着法に較べ、装置が簡便で、高品質の薄膜が形成
できる。酸化物の薄膜をスパッタリング法で作製する場
合、ターゲットに酸化物を用い、スパッタリングガスは
后と０２との混合ガスを用いるのが一般的である。上記
のスパッタリング法の場合、基板とターゲットの間の距
離は、通常４０ｍｍ前後であり、作製可能な薄膜の面積
は、２０ｍｍ角程度犬走った。BACKGROUND OF THE INVENTION Although there are various methods for producing thin films, the sputtering method uses a simpler device and can form a higher quality thin film than the vapor deposition method. When producing an oxide thin film by sputtering, it is common to use an oxide as a target and to use a mixed gas of 02 and 02 as a sputtering gas. In the case of the above sputtering method, the distance between the substrate and the target is usually around 40 mm, and the area of the thin film that can be produced is about 20 mm square.
発明が解決しようとする課題
酸化物超電導体を電子デバイス等に応用する場合には、
１００ｍｍ角程度の面接の大きな薄膜とする必要がある
。スパッタリング法で、面積の大きな薄膜を作製するに
は、基板とターゲットの間の距離を大きくしなければな
らない。しかしながら、基板とターゲットの間の距離を
大きくすると、得られる酸化物超電導薄膜は、結晶中の
酸素が不足したものとなり、超電導特性が悪いか、甚だ
しい場合は超電導性を有さない。Problems to be Solved by the Invention When applying oxide superconductors to electronic devices, etc.
It is necessary to use a thin film with a large surface area of about 100 mm square. In order to produce a thin film with a large area using the sputtering method, the distance between the substrate and the target must be increased. However, if the distance between the substrate and the target is increased, the resulting oxide superconducting thin film will lack oxygen in its crystals, resulting in poor superconductivity or, in extreme cases, no superconductivity.
そこで、本発明の目的は、上記従来技術の問題点を解決
した、大面積で特性の（愛れた酸化物超電導薄膜を作製
可能な方法を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method that solves the problems of the prior art and is capable of producing a large-area oxide superconducting thin film with excellent characteristics.
課題を解決するための手段
本発明に従うと、基板上に大きな面積の酸化物薄膜をス
パッタリング法により作製する方法において、前記基板
とターゲットとの間の距離を７０〜２００ ｍｍとし、
前記基板付近に０３を供給しながろスパッタリングを行
うことを特［敷とする大面積酸化物薄膜の作製方法が提
供される。Means for Solving the Problems According to the present invention, in a method for producing a large area thin oxide film on a substrate by sputtering, the distance between the substrate and the target is 70 to 200 mm,
A method for producing a large-area oxide thin film is provided, which particularly involves performing sputtering while supplying O3 near the substrate.
作用
本発明の方法は、基板とターゲットの間の距離を従来よ
り大きくし、基板付近に０３を供給しながらスパッタリ
ングを行うところにその主要な特徴がある。本発明の方
法では、基板とターゲットとの間の距離を７０〜２００
ｍｍとする。この距離が７０ｍｍ未満では、１００ｍ
＋ｎ角程度の面犬走薄膜を作製するには近過ぎ、薄膜周
辺おでは、厚さが薄くなり、組成が違ってしまう。一方
この距離が２００ ｍｒｒＩを超えると、成膜速度が遅
くなり、成膜が長時間にわたるため実用的でない。Function The main feature of the method of the present invention is that the distance between the substrate and the target is made larger than that of the conventional method, and sputtering is performed while supplying 03 near the substrate. In the method of the present invention, the distance between the substrate and the target is 70 to 200 mm.
Let it be mm. If this distance is less than 70mm, 100m
It is too close to create a thin film with an angle of about +n, and the thickness around the thin film will be thinner and the composition will be different. On the other hand, if this distance exceeds 200 mrrI, the film formation rate will be slow and the film formation will take a long time, which is not practical.
本発明の方法で酸化物超電導薄膜を作製する場合は、ス
パッタリングガスに例えばＡｒと０２が４：１て混合さ
れた混合ガスを用い、全圧をｌＸｌ０−３〜３ Ｘ １
０− ’Ｔｏｒｒとし、基板付近に供給する０３分圧は
、５ ｘｌＯ−’ 〜５ ｘｌＯ−２Ｔｏｒｒが好まし
い。これよ、０３分圧が５ Ｘｌ０−’Ｔｏｒｒ未満で
は効果がなく、５ ＸＩＯ”Ｔｏｒｒを超えると、０３
により、ヒータヤ基板ホルダ等が酸化され、劣化するた
めである。When producing an oxide superconducting thin film using the method of the present invention, a sputtering gas containing, for example, a mixture of Ar and O2 at a ratio of 4:1 is used, and the total pressure is set to lXl0-3~3X1.
0-' Torr, and the O3 partial pressure supplied near the substrate is preferably 5 xlO-' to 5 xlO-2 Torr. This is true, if the 03 partial pressure is less than 5
This is because the heater, substrate holder, etc. are oxidized and deteriorated.
また、本発明の方法では、大きな面積の均一な薄膜を作
製するために、０３を基板表面に均一に供給する必要が
ある。そのため、０３を供給するノズルを基板周囲に沿
った環状の形状とし、このノズルに均等な間隔で設けら
れた吹き出し口から基板中心に向かって０３が吹き出す
ように構成することが好ましい。Furthermore, in the method of the present invention, in order to produce a uniform thin film with a large area, it is necessary to uniformly supply 03 to the substrate surface. Therefore, it is preferable that the nozzle for supplying 03 has an annular shape along the periphery of the substrate, and the nozzle is configured so that 03 is blown out toward the center of the substrate from the blow-off ports provided at equal intervals.
以下、本発明を実施例により、さらに詳しく説明するが
、以下の開示は本発明の単なる実施例に過ぎず、本発明
の技術的範囲をなんら制限するものではない。EXAMPLES Hereinafter, the present invention will be explained in more detail with reference to Examples, but the following disclosure is merely an example of the present invention and does not limit the technical scope of the present invention in any way.
波出力３００Ｗて他の条件を変えて作製した。作製後そ
れぞれの薄膜の超電導特性を測定した。作製条件および
測定結果を第１表および第２表に示す。It was produced with a wave output of 300 W and other conditions changed. After fabrication, the superconducting properties of each thin film were measured. The manufacturing conditions and measurement results are shown in Tables 1 and 2.
実施例
第１図に、本発明の方法を実現するための高周波スパッ
タリング装置の一例の概略図を示す。第１図のスパッタ
リング装置は、チャンバ１と、チャンバ１の上側にあっ
て、下向きに基板２を保持する基板ホルダ３と、基板ホ
ルダ３に内蔵された基板２を加熱するヒータ４とを具備
する。チャンバ１の下側には、基板２に対向するようタ
ーゲット５が固定され、高周波電源６により高周波電力
が印加される。また、このスパッタリング装置は、基板
２の近傍に基板２を環状に取り囲む０３供給ノズル７を
具備する。Embodiment FIG. 1 shows a schematic diagram of an example of a high frequency sputtering apparatus for implementing the method of the present invention. The sputtering apparatus shown in FIG. 1 includes a chamber 1, a substrate holder 3 that is located above the chamber 1 and holds a substrate 2 facing downward, and a heater 4 that heats the substrate 2 built into the substrate holder 3. . A target 5 is fixed to the lower side of the chamber 1 so as to face the substrate 2 , and a high frequency power source 6 applies high frequency power to the target 5 . Further, this sputtering apparatus includes an 03 supply nozzle 7 that surrounds the substrate 2 in an annular manner near the substrate 2.
上記のスパッタリング装置を用いて、
Ｙ、Ｂａ２Ｃｕ＋０７．−ＸおよびＢ１２５ｒ２Ｃａ２
Ｃｕ３０ｘの各酸化物超電導体の１００ｍｍ角の薄膜を
基板温度７００℃、４インチ径のスパッタターゲットを
使用し、高周発明の効果
本発明の方法により、１００ｍｍ角程度の大音な面積の
酸化物薄膜を特性を損なわずに作製することができる。Using the above sputtering apparatus, Y, Ba2Cu+07. -X and B125r2Ca2
A 100 mm square thin film of each oxide superconductor of Cu30x was formed at a substrate temperature of 700°C using a 4-inch diameter sputtering target. Thin films can be produced without impairing their properties.
本発明の方法は、特に結晶中の酸素含有量が特性に大き
く影響を与える酸化物超電導体の薄膜に作製に有効であ
る。The method of the present invention is particularly effective for producing thin films of oxide superconductors whose properties are greatly affected by the oxygen content in the crystal.
また、本明細書では、１００ｍｍ角程度の大音を作製す
る場合を中心に説明を行ったが、本発明の方法は、より
大きな面積の薄膜の作製にも応用可能である。Further, in this specification, the case where a large sound of about 100 mm square is produced has been mainly described, but the method of the present invention can also be applied to the production of a thin film with a larger area.
５・ ・ ・ターゲット、 ６・・・高周波電源、 ７・・・ノズル5. Target, 6...High frequency power supply, 7... Nozzle
Claims (1)
により作製する方法において、前記基板とターゲットと
の間の距離を７０〜２００ｍｍとし、前記基板付近にＯ
＿３を供給しながらスパッタリングを行うことを特徴と
する大面積酸化物薄膜の作製方法。In a method for producing a large-area oxide thin film on a substrate by sputtering, the distance between the substrate and the target is 70 to 200 mm, and O2 is placed near the substrate.
A method for producing a large-area oxide thin film, the method comprising performing sputtering while supplying _3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1280946A JPH03140465A (en) | 1989-10-27 | 1989-10-27 | Production of thin oxide film with large area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1280946A JPH03140465A (en) | 1989-10-27 | 1989-10-27 | Production of thin oxide film with large area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03140465A true JPH03140465A (en) | 1991-06-14 |
Family
ID=17632114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1280946A Pending JPH03140465A (en) | 1989-10-27 | 1989-10-27 | Production of thin oxide film with large area |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03140465A (en) |
-
1989
- 1989-10-27 JP JP1280946A patent/JPH03140465A/en active Pending
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