JPH0314343B2 - - Google Patents

Info

Publication number
JPH0314343B2
JPH0314343B2 JP58227514A JP22751483A JPH0314343B2 JP H0314343 B2 JPH0314343 B2 JP H0314343B2 JP 58227514 A JP58227514 A JP 58227514A JP 22751483 A JP22751483 A JP 22751483A JP H0314343 B2 JPH0314343 B2 JP H0314343B2
Authority
JP
Japan
Prior art keywords
compound
photoreceptor
group
trisazo
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58227514A
Other languages
Japanese (ja)
Other versions
JPS60118750A (en
Inventor
Kazumasa Watanabe
Satoru Ikeuchi
Osamu Sasaki
Kyoshi Sawada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP58227514A priority Critical patent/JPS60118750A/en
Publication of JPS60118750A publication Critical patent/JPS60118750A/en
Publication of JPH0314343B2 publication Critical patent/JPH0314343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)

Description

【発明の詳现な説明】[Detailed description of the invention]

産業䞊の利甚分野 本発明は感光䜓に関し、詳しくはアゟ化合物を
含有する感光局を有する新芏な電子写真感光䜓に
関する。 埓来技術 埓来、感光䜓ずしおは、セレン、酞化亜鉛、硫
化カドミりム等の無機光導電性化合物を䞻成分ず
する感光局を有する無機感光䜓が広く甚いられお
来た。しかしこれらは感床、熱安定性、耐湿性、
耐久性等においお必ずしも満足し埗るものではな
い。䟋えば、セレンは結晶化するず感光䜓ずしお
の特性が劣化しおしたうため、補造䞊も難しく、
たた熱や指王等が原因ずなり結晶化し、感光䜓ず
しおの性胜が劣化しおしたう。たた硫化カドミり
ムでは耐湿性や耐久性、酞化亜鉛でも耐久性等に
問題がある。 これらの無機感光䜓の持぀欠点を克服する目的
で様々な有機導電性化合物を䞻成分ずする感光局
を有する有機感光䜓の開発・研究が近幎盛んに行
なわれおいる。䟋えば特開昭50−10496号公報に
はポリ−−ビニルカルバゟヌルず−
トリニトロ−−フルオレノンを含有する感光局
を有する有機感光䜓の蚘茉がある。しかしこの感
光䜓は、感床及び耐久性においお必ずしも満足で
きるものではない。このような欠点を改良するた
めにキダリア発生機胜ずキダリア茞送機胜ずを異
なる物質に分担させ、より高性胜の有機感光䜓を
開発する詊みがなされおいる。このようないわゆ
る機胜分離型の電子写真感光䜓は、それぞれの材
料を広い範囲から遞択するこずができ、任意の性
胜を有する感光䜓を比范的容易に䜜成し埗るこず
から倚くの研究がなされおきた。 このような機胜分離型の電子写真感光䜓におい
お、そのキダリア発生物質ずしお、数倚くの化合
物が提案されおいる。無機化合物をキダリア発生
物質ずしお甚いる䟋ずしおは、䟋えば、特公昭43
−16198号公報に蚘茉された無定圢セレンがあり、
これは有機光電動性化合物ず組み合わせお䜿甚さ
れるが、無定圢セレンからなるキダリア発生局は
熱により結晶化しお感光䜓ずしおの特性が劣化し
おしたうずいう欠点は改良されおはいない。 たた有機染料や有機顔料をキダリア発生物質ず
しお甚いる電子写真感光䜓も数倚く提案されおい
る。䟋えば、ビスアゟ化合物たたはトリスアゟ化
合物を感光局䞭に含有する電子写真感光䜓ずしお
特開昭54−12742号公報、特開昭53−95033号公報
がすでに公知である。しかしこれらのビスアゟ化
合物たたはトリスアゟ化合物は、感床、残留電䜍
など電子写真プロセスの幅広い芁求を十分満足さ
せるものではない。 さらに近幎感光䜓の光源ずしおArレヌザ、He
−Neレヌザ等の気䜓レヌザや半導䜓レヌザが䜿
甚され始めおいる。これらのレヌザはその特城ず
しお時系列でONOFFが可胜であり、むンテリ
ゞ゚ント耇写機をはじめずする画像凊理機胜を有
する耇写機やコンピナヌタのアりトプツト甚のプ
リンタの光源ずしお特に有望芖されおいる。䞭で
も半導䜓レヌザはその性質䞊音響光孊玠子等の電
気信号光信号の倉換玠子が䞍芁であるこずや小
型・軜量化が可胜であるこずなどから泚目を集め
おいる。しかしこの半導䜓レヌザは気䜓レヌザに
比范しお䜎出力であり、たた発振波長も長波長
玄780nm以䞊であるこずから埓来の感光䜓で
は分光感床が短波長偎により過ぎおおり、このた
たでは半導䜓レヌザを光源ずする感光䜓ずしおの
䜿甚は䞍可胜である。 近幎、ある皮のトリスアゟ化合物を甚いる電子
写真感光䜓が提案された。特開昭57−116345号
公報、特開昭57−182748号公報しかしながら、
これらに提案されたトリスアゟ化合物においおも
長波長領域における電子写真特性の点で満足され
るものではない。 発明の目的 本発明の目的は熱及び光に察しお安定で、か぀
キダリア発生胜に優れた特定のトリスアゟ化合物
を含有する感光䜓を提䟛するこずにある。 本発明の他の目的は、長波長領域で高感床にし
おか぀残留電䜍が小さく、たた繰返し䜿甚しおも
それらの特性が倉化しない耐久性の優れた半導䜓
レヌザ甚電子写真感光䜓を提䟛するこずにある。 本発明の曎に他の目的は、半導䜓レヌザ等の長
波長光源に察しおも十分の実甚感床を有する感光
䜓を提䟛するこずにある。 本発明者らは、以䞊の目的を達成すべく鋭意研
究を重ねた結果、䞋蚘䞀般匏〔〕で瀺される非
察称の構造を有するトリスアゟ化合物が感光䜓の
有効成分ずしお働き埗るこずを芋い出し、本発明
を完成したものである。 䞀般匏〔〕 匏䞭、は眮換又は無眮換のプニル基たたは
ナフチル基を衚す。眮換基ずしおはアルキル基、
アルコキシ基、ハロゲン原子、ニトロ基、シアノ
基、アシル基、アシルアミノ基、アミノ基等を挙
げるこずができる。Ar1は眮換又は無眮換のナフ
チレン基、Ar2は眮換又は無眮換のプニレン基
を衚す。眮換基ずしおはアルキル基、アルコキシ
基、ハロゲン原子、ニトロ基、シアノ基、アシル
基、アシルアミノ基、アミノ基、スルフアモむル
基、カルバモむル基等を挙げるこずができる。 発明の効果 即ち本発明においおは、感光䜓の感光局を構成
する光導電性物質ずしお前蚘䞀般匏〔〕で衚さ
れるアゟ化合物を䜿甚するこずにより、本発明の
目的である長波長領域においお著しく電荷保持
力、感床、残留電䜍等の電子写真特性においお優
れおおり、か぀繰り返し䜿甚した時にも疲劎劣化
が少なく、さらに特に780nm以䞊の長波長領域に
おいおも十分な感床を有する優れた感光䜓を䜜成
するこずができる。 特に、この長波長域における電子写真特性では
先に挙げた公知技術である類䌌のトリスアゟ構造
を持぀た化合物特開昭57−116345号公報、特開
昭57−182748号公報に蚘茉や、察称型トリスア
ゟ化合物特開昭58−76841号公報に蚘茉より
優れた性胜を有する。 前蚘䞀般匏〔〕で瀺される本発明に有甚なト
リスアゟ化合物のうち特に奜たしいものは䞀般匏
〔〕で瀺される。 䞀般匏〔〕 匏䞭、R1及びR2は氎玠原子、アルキル基、ア
ルコキシ基、ハロゲン原子、ニトロ基、アノ基、
アシル基、シアノ基、アシルアミノ基、カルバモ
むル基又はスルフアモむル基を衚す。 以䞋、前蚘䞀般匏〔〕〔〕で瀺される本発
明に有甚なトリスアゟ化合物の具䜓䟋を以䞋に挙
げる。〔衚〕における眮換基は次匏の䞀般匏
〔〕のそれぞれの察応する郚分の眮換基を衚す。 䞀般匏〔〕
(Industrial Application Field) The present invention relates to a photoreceptor, and more particularly to a novel electrophotographic photoreceptor having a photosensitive layer containing an azo compound. (Prior Art) Conventionally, inorganic photoreceptors having a photosensitive layer mainly composed of an inorganic photoconductive compound such as selenium, zinc oxide, or cadmium sulfide have been widely used as photoreceptors. However, these are sensitive, thermally stable, moisture resistant,
Durability etc. are not necessarily satisfactory. For example, when selenium crystallizes, its properties as a photoreceptor deteriorate, making it difficult to manufacture.
Moreover, heat, fingerprints, etc. cause crystallization, which deteriorates the performance as a photoreceptor. In addition, cadmium sulfide has problems with moisture resistance and durability, and zinc oxide has problems with durability, etc. In order to overcome the drawbacks of these inorganic photoreceptors, research and development have been actively conducted in recent years on organic photoreceptors having photosensitive layers containing various organic conductive compounds as main components. For example, in JP-A-50-10496, poly-N-vinylcarbazole and 2,4,7-
There is a description of an organic photoreceptor having a photosensitive layer containing trinitro-9-fluorenone. However, this photoreceptor is not necessarily satisfactory in sensitivity and durability. In order to improve these drawbacks, attempts have been made to develop organic photoreceptors with higher performance by assigning the carrier generation function and the carrier transport function to different substances. Many studies have been conducted on such so-called functionally separated electrophotographic photoreceptors because each material can be selected from a wide range and a photoreceptor with arbitrary performance can be produced relatively easily. Ta. Many compounds have been proposed as carrier generating substances for such functionally separated electrophotographic photoreceptors. As an example of using an inorganic compound as a carrier generating substance, for example,
-There is amorphous selenium described in Publication No. 16198,
Although this is used in combination with an organic photoelectric compound, the drawback that the carrier generation layer made of amorphous selenium crystallizes due to heat and deteriorates the characteristics as a photoreceptor has not been improved. Furthermore, many electrophotographic photoreceptors using organic dyes or organic pigments as carrier generating substances have been proposed. For example, JP-A-54-12742 and JP-A-53-95033 are already known as electrophotographic photoreceptors containing bisazo compounds or trisazo compounds in their photosensitive layers. However, these bisazo compounds or trisazo compounds do not sufficiently satisfy the wide range of requirements of electrophotographic processes, such as sensitivity and residual potential. Furthermore, in recent years, Ar lasers and He lasers have been used as light sources for photoreceptors.
-Gas lasers such as Ne lasers and semiconductor lasers are beginning to be used. A characteristic of these lasers is that they can be turned on and off in a time-series manner, making them particularly promising light sources for copying machines with image processing functions, including intelligent copying machines, and printers for computer output. Among these, semiconductor lasers are attracting attention because their nature does not require electrical signal/optical signal conversion elements such as acousto-optic elements, and they can be made smaller and lighter. However, this semiconductor laser has a low output compared to a gas laser, and the oscillation wavelength is long (approximately 780 nm or more), so the spectral sensitivity of conventional photoreceptors is too high on the short wavelength side. It cannot be used as a photoreceptor using a laser as a light source. In recent years, electrophotographic photoreceptors using certain trisazo compounds have been proposed. (Japanese Patent Application Laid-open No. 57-116345, JP-A No. 57-182748) However,
Even the trisazo compounds proposed above are not satisfactory in terms of electrophotographic properties in the long wavelength region. (Object of the Invention) An object of the present invention is to provide a photoreceptor containing a specific trisazo compound that is stable against heat and light and has excellent carrier generation ability. Another object of the present invention is to provide an electrophotographic photoreceptor for a semiconductor laser that has high sensitivity in a long wavelength region, has a small residual potential, and has excellent durability whose characteristics do not change even after repeated use. It is in. Still another object of the present invention is to provide a photoreceptor that has sufficient practical sensitivity even to long wavelength light sources such as semiconductor lasers. As a result of intensive research to achieve the above object, the present inventors discovered that a trisazo compound having an asymmetric structure represented by the following general formula [] can act as an active ingredient of a photoreceptor, and the present invention This is the completed version. General formula [] In the formula, A represents a substituted or unsubstituted phenyl group or naphthyl group. As a substituent, an alkyl group,
Examples include an alkoxy group, a halogen atom, a nitro group, a cyano group, an acyl group, an acylamino group, and an amino group. Ar 1 represents a substituted or unsubstituted naphthylene group, and Ar 2 represents a substituted or unsubstituted phenylene group. Examples of the substituent include an alkyl group, an alkoxy group, a halogen atom, a nitro group, a cyano group, an acyl group, an acylamino group, an amino group, a sulfamoyl group, and a carbamoyl group. (Effects of the Invention) That is, in the present invention, by using the azo compound represented by the above general formula [] as a photoconductive substance constituting the photosensitive layer of the photoreceptor, the long wavelength region which is the object of the present invention can be achieved. An excellent photoreceptor that has outstanding electrophotographic properties such as charge retention, sensitivity, and residual potential, shows little fatigue deterioration even after repeated use, and has sufficient sensitivity especially in the long wavelength region of 780 nm or more. can be created. In particular, for the electrophotographic properties in this long wavelength range, compounds with a similar trisazo structure (described in JP-A-57-116345 and JP-A-57-182748), which are the well-known techniques listed above, are particularly effective. It has better performance than the symmetrical trisazo compound (described in JP-A-58-76841). Among the trisazo compounds useful in the present invention represented by the above general formula [], particularly preferred ones are represented by the general formula []. General formula [] In the formula, R 1 and R 2 are a hydrogen atom, an alkyl group, an alkoxy group, a halogen atom, a nitro group, an ano group,
Represents an acyl group, cyano group, acylamino group, carbamoyl group or sulfamoyl group. Specific examples of trisazo compounds useful in the present invention represented by the general formulas [] and [] are listed below. The substituents in [Table A] represent the substituents of the respective corresponding parts of the following general formula []. General formula []

【衚】【table】

【衚】【table】

【衚】 以䞊のごずきトリスアゟ化合物は公知の方法に
より合成するこずができる。 合成䟋 䟋瀺化合物(6)の合成 −アミノ−−−アミノプニルアゟナフ
タレン5.25を濃硫酞30mlに溶かす。これにあら
かじめ調敎したニトロシル硫酞濃硫酞15ml、亜
硫酞ナトリりム3.0を−℃〜−10℃で滎䞋
した。滎䞋埌同枩床で30分撹拌し、六北化燐アン
モニりム20を含む氷氎600mlの䞭に泚いだ。析
出した結晶を手早く濟取した。これを−15℃に冷
华した−ゞメチルホルムアミド100mlに溶
かし、次のカツプリング反応の滎䞋液ずした。 −ヒドロキシ−−−メトキシ−−メ
チルプニルカルバモむル−ベンゟ〔〕カル
バゟヌルナフトヌルASSR、ヘキスト補15.0
ずトリ゚タノヌルアミン10を300mlの
−ゞメチルホルムアミドに溶解し、℃に氷冷し
ながら、これに䞊述の滎䞋液を陀々に加えた。滎
䞋終了埌、曎に時間同枩床で撹拌したのち、宀
枩にお䞀倜攟眮し、生じた結晶を濟取した。この
結晶を200mlの−ゞメチルホルムアミドに
より回、のアセトンにより回掗浄した
埌、也燥しお䟋瀺化合物(6)を埗た。 収量1.40 収率6.5 この化合物は元玠分析により確認された。 元玠分析結果化孊匏はC66H48N10O6 元 玠    蚈算倀(%) 73.60 4.49 13.00 実枬倀(%) 73.49 4.62 13.05 本発明の非察称トリスアゟ化合物は優れた光導
電性を有し、これを甚いお電子写真感光䜓を補造
する堎合、導電性支持䜓䞊に本発明のトリスアゟ
化合物を結着剀䞭に分散した感光局を蚭けるこず
により補造するこずができる。たた他の方法ずし
お、本発明のトリスアゟ化合物の持぀光導電性の
うち、特に優れたキダリア発生胜を利甚するキダ
リア発生物質ずしお甚い、これず組合せお有効に
䜜甚し埗るキダリア茞送物質ず共に甚いるこずに
より、積局型、あるいは分散型のいわゆる機胜分
離型の電子写真感光䜓ずするこずも可胜である。 たた本発明で甚いられるトリスアゟ化合物は前
蚘䞀般匏〔〕で衚されるトリスアゟ化合物の䞭
から単独あるいは皮以䞊の組合せで甚いるこず
ができ、又、他のゞスアゟたたはトリスアゟ化合
物ずの組合せで䜿甚しおもよい。 電子写真感光䜓の機械的構成は皮々の圢態が知
れらおいるが、本発明の電子写真感光䜓はそれら
のいずれの圢態をもずり埗る。 通垞は、第図〜第図の圢態である。第図
および第図では、導電性支持䜓䞊に前述のト
リスアゟ化合物を䞻成分ずするキダリア発生局
ず、キダリア茞送物質を䞻成分ずしお含有するキ
ダリア茞送局ずの積局䜓より成る感光局を蚭
ける。第図および第図に瀺すようにこの感光
局は、導電性支持䜓䞊に蚭けた䞭間局を介し
お蚭けおもよい。このように感光局を二局構成
ずしたずきに最も優れた電子写真特性を有する電
子写真感光䜓が埗られる。 たた本発明においおは、第図および第図に
瀺すように前蚘キダリア発生物質をキダリア茞
送物質を䞻成分ずする局䞭に分散せしめお成る
感光局を導電性支持䜓䞊に盎接、あるいは䞭
間局を介しお蚭けおもよい。 本発明の非察称トリスアゟ化合物をキダリア発
生物質ずしお甚いた堎合、これず組合せお甚いら
れるキダリア茞送物質ずしおはトリニトロフルオ
レノンあるいはテトラニトロフルオレノンなどの
電子を茞送しやすい電子受容性物質のほかポリ−
−ビニルカルバゟヌルに代衚されるような耇玠
環化合物を偎鎖に有する重合䜓、トリアゟヌル誘
導䜓、オキサゞアゟヌル誘導䜓、むミダゟヌル誘
導䜓、ピラゟリン誘導䜓、ポリアリヌルアルカン
誘導䜓、プニレンゞアミン誘導䜓、ヒドラゟン
誘導䜓、アミノ眮換アルコン誘導䜓、トリアリヌ
ルアミン誘導䜓、カルバゟヌル誘導䜓、スチルベ
ン誘導䜓等の正孔を茞送しやすい電子䟛䞎性物質
が挙げられる。 本発明には電子䟛䞎性物質の方が奜たしい。本
発明に甚いられるキダリア茞送物質はこれらに限
定されるものではない。 二局構成の感光局を構成するキダリア発生局
は導電性支持䜓、もしくはキダリア茞送局
䞊に盎接、あるいは必芁に応じお接着局もしくは
バリダヌ局などの䞭間局を蚭けた䞊に䟋えば次の
方法によ぀お圢成するこずができる。 − トリスアゟ化合物を適圓な溶媒に溶解し
た溶液を、あるいは必芁に応じお結着剀を加え
混合溶解した溶液を塗垃する方法。 − トリスアゟ化合物をボヌルミル、ホモミ
キサヌ等によ぀お分散媒䞭で埮现粒子ずし、必
芁に応じお結着剀を加えお混合分散した分散液
を塗垃する方法。 キダリア発生局の圢成に䜿甚される溶媒あるい
は分散媒ずしおは、ブチルアミン、ゞ゚チルアミ
ン、゚チレンゞアミン、む゜プロパノヌルアミ
ン、トリ゚タノヌルアミン、トリ゚チレンゞアミ
ン、−ゞメチルホルムアミド、アセトン、
メチル゚チルケトン、シクロヘキサノン、ベンれ
ン、トル゚ン、キシレン、クロロホルム、
−ゞクロル゚タン、ゞクロルメタン、テトラヒド
ロフラン、ゞオキサン、メタノヌル、゚タノヌ
ル、む゜プロパノヌル、酢酞゚チル、酢酞ブチ
ル、ゞメチルスルホキシド等が挙げられる。 キダリア発生局あるいはキダリア茞送局に結着
剀を甚いる堎合は任意のものを甚いるこずができ
るが、疎氎性でか぀誘電率が高く、電気絶瞁性の
フむルム圢成性高分子重合䜓を甚いるのが奜たし
い。このような高分子重合䜓ずしおは、たずえば
次のものを挙げるこずができるが、これらに限定
されるものではない。 − ポリカヌボネヌト − ポリ゚ステル − メタクリル暹脂 − アクリル暹脂 − ポリ塩化ビニル − ポリ塩化ビニリデン − ポリスチレン − ポリビニルアセテヌト − スチレン−ブタゞ゚ン共重合䜓 −10 塩化ビニリデン−アクロニトリル共重合
䜓 −11 塩化ビニル−酢酞ビニル共重合䜓 −12 塩化ビニル−酢酞ビニル−無氎マレむン
酞共重合䜓 −13 シリコヌン暹脂 −14 シリコヌン−アルキツド暹脂 −15 プノヌル−ホルムアルデヒド暹脂 −16 スチレン−アルキツド暹脂 −17 ポリ−−ビニルカルバゟヌル −18 ポリビニルブチラヌル これらの結着剀は、単独であるいは皮以䞊の
混合物ずしお甚いるこずができる。 このようにしお圢成されるキダリア発生局の
厚さは、0.01ÎŒm〜20ÎŒmであるこずが望たしい
が、曎に奜たしくは0.05ÎŒm−5ÎŒmである。たた
キダリア発生局あるいは感光局が分散系の堎合、
アゟ化合物の粒埄は5ÎŒm以䞋であるこずが奜たし
く、曎に奜たしくは1ÎŒm以䞋である。 本発明の電子写真感光䜓に甚いられる導電性支
持䜓ずしおは、合金を含めた金属板、金属ドラム
たたは導電性ポリマヌ、酞化むンゞりム等の導電
性化合物や合金を含めたアルミニりム、パラゞり
ム、金等の金属薄局を塗垃、蒞着あるいはラミネ
ヌトしお導電性化を達成した玙、プラスチツクフ
むルム等が挙げられる。 接着局あるいはバリダ局などの高分子重合䜓の
ほか、ポリビニルアルコヌル、゚チルセルロヌ
ス、カルボキシメチルセルロヌスなどの有機高分
子物質たたは酞化アルミニりムなどが甚いられ
る。 本発明の電子写真感光䜓は以䞊のような構成で
あ぀お、埌述する実斜䟋からも明かなように、垯
電特性、感床特性、特に長波長領域での感床特性
に優れおおり、たた繰返し䜿甚したずきにも疲劎
劣化が少なく、半導䜓レヌザ甚プリンタずしおの
特性に優れたものである。 以䞋、本発明の実斜䟋で具䜓的に説明するが、
これにより本発明の実斜態様が限定されるもので
はない。 比范実隓 ポリ゚ステルフむルム䞊に塩化ビニル−酢酞ビ
ニル−無氎マレむン酞共重合䜓「゚スレツクMF
−10」積氎化孊瀟補よりなる厚さ0.05ÎŒmの䞋
匕き局を蚭け、その䞊に䟋瀺化合物(6)を
−ゞクロル゚タン110mlに混合し、ボヌルミル
で24時間分散した分散液をうすく塗垃した。 也燥埌、埗られたピヌスを自蚘分光光床蚈
320型、日立補䜜所にかけ透過スペクトルを枬
定した。 同様の手法により䟋瀺化合物(4)(1)および䞋蚘
に瀺す比范化合物(1)(2)(3)(4)を枬定した。
[Table] The above trisazo compounds can be synthesized by known methods. Synthesis Example 1 Synthesis of Exemplified Compound (6) 5.25 g of 1-amino-4-p-aminophenyl azonaphthalene was dissolved in 30 ml of concentrated sulfuric acid. Nitrosyl sulfuric acid (15 ml of concentrated sulfuric acid, 3.0 g of sodium sulfite) prepared in advance was added dropwise to this at -5°C to -10°C. After the addition, the mixture was stirred at the same temperature for 30 minutes and poured into 600 ml of ice water containing 20 g of ammonium phosphorus hexafluoride. The precipitated crystals were quickly collected by filtration. This was dissolved in 100 ml of N,N-dimethylformamide cooled to -15°C and used as a dropwise solution for the next coupling reaction. 2-Hydroxy-3-(4-methoxy-2-methylphenylcarbamoyl)-benzo[a]carbazole (Naphthol ASSR, manufactured by Hoechst) 15.0
g and 10 g of triethanolamine in 300 ml of N,N
- It was dissolved in dimethylformamide, and the above-mentioned solution was gradually added thereto while cooling with ice at 0°C. After the addition was completed, the mixture was further stirred at the same temperature for 2 hours, and then left at room temperature overnight, and the resulting crystals were collected by filtration. The crystals were washed twice with 200 ml of N,N-dimethylformamide and twice with 1 acetone, and then dried to obtain exemplified compound (6). Yield 1.40g Yield 6.5% This compound was confirmed by elemental analysis. Elemental analysis results (chemical formula is C 66 H 48 N 10 O 6 ) Element C H N Calculated value (%) 73.60 4.49 13.00 Actual value (%) 73.49 4.62 13.05 The asymmetric trisazo compound of the present invention has excellent photoconductivity. However, when producing an electrophotographic photoreceptor using this, it can be produced by providing a photosensitive layer in which the trisazo compound of the present invention is dispersed in a binder on a conductive support. Another method is to use the trisazo compound of the present invention as a carrier generating substance that takes advantage of its particularly excellent carrier generating ability among its photoconductivity, and to use it together with a carrier transporting substance that can effectively act in combination with this. It is also possible to make a so-called functionally separated electrophotographic photoreceptor, such as a laminated type or a dispersed type. Further, the trisazo compound used in the present invention can be used alone or in combination of two or more of the trisazo compounds represented by the above general formula [], or in combination with other disazo or trisazo compounds. It's okay. Various mechanical configurations of electrophotographic photoreceptors are known, and the electrophotographic photoreceptor of the present invention can take any of these forms. Usually, the configuration is as shown in FIGS. 1 to 6. In FIGS. 1 and 3, a carrier generation layer 2 containing the above-mentioned trisazo compound as a main component is provided on a conductive support 1.
and a carrier transport layer 3 containing a carrier transport substance as a main component. As shown in FIGS. 2 and 4, this photosensitive layer 4 may be provided via an intermediate layer 5 provided on a conductive support. When the photosensitive layer 4 has a two-layer structure in this manner, an electrophotographic photoreceptor having the most excellent electrophotographic properties can be obtained. Further, in the present invention, as shown in FIGS. 5 and 6, a photosensitive layer 4 comprising the carrier generating substance 7 dispersed in a layer 6 mainly composed of a carrier transporting substance is provided on the conductive support 1. It may be provided directly or via the intermediate layer 5. When the asymmetric trisazo compound of the present invention is used as a carrier generating substance, carrier transporting substances that can be used in combination with it include electron-accepting substances that easily transport electrons such as trinitrofluorenone or tetranitrofluorenone, as well as poly-
Polymers having a heterocyclic compound in the side chain such as N-vinylcarbazole, triazole derivatives, oxadiazole derivatives, imidazole derivatives, pyrazoline derivatives, polyarylalkane derivatives, phenylenediamine derivatives, hydrazone derivatives, amino-substituted Examples include electron-donating substances that easily transport holes, such as alcone derivatives, triarylamine derivatives, carbazole derivatives, and stilbene derivatives. Electron-donating substances are preferred for the present invention. The carrier transport materials used in the present invention are not limited to these. The carrier generation layer 2 constituting the photosensitive layer 4 having a two-layer structure is the conductive support 1 or the carrier transport layer 3.
It can be formed directly thereon or, if necessary, with an intermediate layer such as an adhesive layer or a barrier layer provided thereon, for example, by the following method. M-1 A method of applying a solution in which a trisazo compound is dissolved in a suitable solvent, or a solution in which a binder is added and mixed as necessary. M-2 A method in which a trisazo compound is made into fine particles in a dispersion medium using a ball mill, a homomixer, etc., and a binder is added if necessary to mix and disperse the resulting dispersion, and then a dispersion is applied. Examples of the solvent or dispersion medium used for forming the carrier generation layer include butylamine, diethylamine, ethylenediamine, isopropanolamine, triethanolamine, triethylenediamine, N,N-dimethylformamide, acetone,
Methyl ethyl ketone, cyclohexanone, benzene, toluene, xylene, chloroform, 1,2
- Dichloroethane, dichloromethane, tetrahydrofuran, dioxane, methanol, ethanol, isopropanol, ethyl acetate, butyl acetate, dimethyl sulfoxide and the like. When using a binder in the carrier generation layer or carrier transport layer, any binder can be used, but it is preferable to use a film-forming polymer that is hydrophobic, has a high dielectric constant, and is electrically insulating. . Examples of such high molecular weight polymers include, but are not limited to, the following. P-1 Polycarbonate P-2 Polyester P-3 Methacrylic resin P-4 Acrylic resin P-5 Polyvinyl chloride P-6 Polyvinylidene chloride P-7 Polystyrene P-8 Polyvinyl acetate P-9 Styrene-butadiene copolymer P- 10 Vinylidene chloride-acronitrile copolymer P-11 Vinyl chloride-vinyl acetate copolymer P-12 Vinyl chloride-vinyl acetate-maleic anhydride copolymer P-13 Silicone resin P-14 Silicone-alkyd resin P-15 Phenol-formaldehyde resin P-16 Styrene-alkyd resin P-17 Poly-N-vinylcarbazole P-18 Polyvinyl butyral These binders can be used alone or in a mixture of two or more. The thickness of the carrier generation layer 2 thus formed is preferably 0.01 ÎŒm to 20 ÎŒm, more preferably 0.05 ÎŒm to 5 ÎŒm. In addition, if the carrier generation layer or photosensitive layer is a dispersed system,
The particle size of the azo compound is preferably 5 ÎŒm or less, more preferably 1 ÎŒm or less. The conductive support used in the electrophotographic photoreceptor of the present invention includes a metal plate including an alloy, a metal drum or a conductive polymer, a conductive compound such as indium oxide, aluminum including an alloy, palladium, gold, etc. Examples include paper, plastic film, etc. that have been made conductive by coating, vapor depositing, or laminating a thin metal layer. In addition to high molecular weight polymers such as adhesive layers or barrier layers, organic high molecular substances such as polyvinyl alcohol, ethyl cellulose, and carboxymethyl cellulose, or aluminum oxide are used. The electrophotographic photoreceptor of the present invention has the above-mentioned structure, and as is clear from the examples described later, it has excellent charging characteristics and sensitivity characteristics, especially sensitivity characteristics in the long wavelength region, and can be used repeatedly. Even when the printer is used, fatigue deterioration is small, and the printer has excellent characteristics as a semiconductor laser printer. Hereinafter, the present invention will be specifically explained in Examples,
This does not limit the embodiments of the present invention. (Comparative experiment) Vinyl chloride-vinyl acetate-maleic anhydride copolymer "Eslec MF" was coated on polyester film.
-10'' (manufactured by Sekisui Chemical Co., Ltd.) with a thickness of 0.05 ÎŒm was provided, and 2 g of exemplified compound (6) was added on top of it.
The dispersion was mixed with 110 ml of 2-dichloroethane and dispersed in a ball mill for 24 hours, and a thin layer of the dispersion was applied. After drying, the obtained piece was subjected to a self-recording spectrophotometer (model 320, Hitachi, Ltd.) to measure the transmission spectrum. Exemplary compounds (4), (1) and comparative compounds (1), (2), (3), (4) shown below were measured using the same method.

【衚】 ε790ελmaxは化合物の790nmにおける分光
吞収匷床をそのλmaxにおける分光吞収匷床で割
぀た倀を瀺す。 衚より、察称トリスアゟ化合物である比范化
合物(1)(2)(3)(4)および非察称トリスアゟ化合
物であ぀おもカプラヌがナフトヌルASMXであ
る比范化合物(1)に察しお本発明の化合物は著るし
く分光吞収スペクトルが延びおいるこずがわか
る。 察称トリスアゟ化合物においおカプラヌをナフ
トヌルASMXからベンゟ〔〕カルバゟヌルに
倉化させるず比范化合物(5)→比范化合物(2)
λmaxが45nm長波化する。それに察しお非察称
トリスアゟだず同様の倉化比范化合物(1)→䟋瀺
化合物(6)に察しお92nmず著しい長波化がみられ
る。 たた衚のε790ελmaxの倀より本発明の化
合物は790nmにおいおも高い分光吞収特性を瀺す
こずがわかる。 実斜䟋  盎埄100mmのアルミニりム補ドラムの衚面に、
塩化ビニル−酢酞ビニル−無氎マレむン酞共重合
䜓「゚スレツクMF−10」積氎化孊瀟補より
なる厚さ0.05ÎŒmの䞭間局を蚭け、その䞊に䟋瀺
化合物(7)を−ゞクロロ゚タン400mlに
混合し、ボヌルミル分散機で24時間分散した分散
液を也燥埌の膜厚が0.5ÎŒmになるようにしお塗垃
し、キダリア発生局を圢成した。 さらにその䞊に䞋蚘化合物−30ずポ
リカヌポネヌト暹脂「パンラむト−1250」垝
人化成瀟補50ずを−ゞクロル゚タン
400mlに溶解し、也燥埌の膜厚が12ÎŒmになるよう
に塗垃しおキダリア茞送局を圢成し、ドラム䞊の
電子写真感光䜓を䜜成した。 この感光䜓の790nmにおける分光感床は
0.85ÎŒJcm2半枛露光量であ぀た。 次にこの感光䜓を感光䜓衚面でレヌザ光匷床が
0.85mWずなる半導䜓レヌザ790nmを装眮し
た実隓機により実写テストを行な぀た。 感光䜓の衚面を−6KVに垯電した埌、レヌザ
露光し−350Vのバむアス電圧で反転珟像したず
ころ、かぶりのない良奜な画像が埗られた。 たた、これは10000回繰り返しおも倉わるこず
はなか぀た。 実斜䟋  実斜䟋においお䟋瀺化合物(7)に代えお、䟋瀺
化合物(4)(1)(6)および比范化合物(1)(2)を甚い
た他は同様にしおドラム状の感光䜓を埗た。 それぞれの感光䜓の790nmにおける分光感床は
衚に瀺す通りであ぀た。
[Table] ε790/ελmax represents the value obtained by dividing the spectral absorption intensity of a compound at 790 nm by its spectral absorption intensity at λmax. From Table 1, it can be seen that the present invention was applied to comparative compounds (1), (2), (3), and (4) which are symmetric trisazo compounds, and to comparative compound (1) which is an asymmetric trisazo compound but whose coupler is naphthol ASMX. It can be seen that the compound has a significantly extended spectral absorption spectrum. When the coupler is changed from naphthol ASMX to benzo[a]carbazole in a symmetric trisazo compound (comparative compound (5) → comparative compound (2))
λmax becomes longer wavelength by 45nm. On the other hand, in the case of asymmetric trisazo, a similar change (comparison compound (1) → exemplified compound (6) shows a remarkable wavelength shift of 92 nm). Also, from the value of ε790/ελmax in Table 1, the compound of the present invention has a wavelength of 790 nm. It can be seen that it exhibits high spectral absorption characteristics even when
A 0.05 ÎŒm thick intermediate layer made of vinyl chloride-vinyl acetate-maleic anhydride copolymer "Eslec MF-10" (manufactured by Sekisui Chemical Co., Ltd.) was provided, and 4 g of Exemplary Compound (7) was added to the 1,2- The dispersion was mixed with 400 ml of dichloroethane and dispersed for 24 hours using a ball mill dispersion machine, and then applied to a dry film thickness of 0.5 ÎŒm to form a carrier generation layer. Furthermore, 30 g of the following compound (K-1) and 50 g of polycarbonate resin "Panlite L-1250" (manufactured by Teijin Chemicals) were added to 1,2-dichloroethane.
A carrier transport layer was formed by dissolving the solution in 400 ml and applying it to a film thickness of 12 ÎŒm after drying, thereby producing an electrophotographic photoreceptor on a drum. The spectral sensitivity of this photoreceptor at 790nm is
It was 0.85 ÎŒJ/cm 2 (half exposure amount). Next, this photoreceptor is exposed to the laser beam intensity on the photoreceptor surface.
A live photo test was conducted using an experimental machine equipped with a semiconductor laser (790 nm) that outputs 0.85 mW. After the surface of the photoreceptor was charged to -6 KV, it was exposed to laser light and reverse development was performed at a bias voltage of -350 V. A good image without fogging was obtained. Moreover, this did not change even after repeating this 10,000 times. Example 2 A drum-shaped product was prepared in the same manner as in Example 1 except that exemplified compounds (4), (1), (6) and comparative compounds (1) and (2) were used instead of exemplified compound (7). A photoreceptor was obtained. The spectral sensitivity of each photoreceptor at 790 nm was as shown in Table 2.

【衚】 本発明の化合物は、比范化合物に比べ高感床で
ある。 次に、実斜䟋(1)に蚘した実隓機による実写テス
トにおいおも本発明の化合物を䜿甚した感光䜓は
かぶりの無い良奜な画像を䞎え、これらは10000
回繰り返しおも倉らなか぀た。
[Table] Compounds of the present invention have higher sensitivity than comparative compounds. Next, in the actual photographic test using the experimental machine described in Example (1), the photoreceptor using the compound of the present invention gave good images without fogging, and these
No matter how many times it was repeated, it didn't change.

【図面の簡単な説明】[Brief explanation of the drawing]

第図〜第図はそれぞれ本発明電子写真感光
䜓の機械的構成䟋に぀いお瀺す断面図である。   導電性支持䜓、  キダリア発生局、
  キダリア茞送局、  感光局、  䞭
間局、  キダリア茞送物質を含有する局、
  キダリア発生物質。
1 to 6 are sectional views showing examples of the mechanical structure of the electrophotographic photoreceptor of the present invention, respectively. 1... Conductive support, 2... Carrier generation layer,
3... Carrier transport layer, 4... Photosensitive layer, 5... Intermediate layer, 6... Layer containing a carrier transport substance, 7
...Carrier generating substance.

Claims (1)

【特蚱請求の範囲】  導電性支持䜓䞊に䞋蚘䞀般匏〔〕で瀺すト
リスアゟ化合物を含有する感光局を有するこずを
特城ずする半導䜓レヌザ甚電子写真感光䜓。 䞀般匏〔〕 〔匏䞭、は眮換又は無眮換のプニル基たた
はナフチル基を衚し、Ar1は眮換又は無眮換のナ
フチレン基、Ar2は眮換又は無眮換のプニレン
基を衚す。〕
[Scope of Claims] 1. An electrophotographic photoreceptor for a semiconductor laser, comprising a photosensitive layer containing a trisazo compound represented by the following general formula [] on a conductive support. General formula [] [In the formula, A represents a substituted or unsubstituted phenyl group or a naphthyl group, Ar 1 represents a substituted or unsubstituted naphthylene group, and Ar 2 represents a substituted or unsubstituted phenylene group. ]
JP58227514A 1983-11-30 1983-11-30 Photosensitive material Granted JPS60118750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58227514A JPS60118750A (en) 1983-11-30 1983-11-30 Photosensitive material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58227514A JPS60118750A (en) 1983-11-30 1983-11-30 Photosensitive material

Publications (2)

Publication Number Publication Date
JPS60118750A JPS60118750A (en) 1985-06-26
JPH0314343B2 true JPH0314343B2 (en) 1991-02-26

Family

ID=16862090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58227514A Granted JPS60118750A (en) 1983-11-30 1983-11-30 Photosensitive material

Country Status (1)

Country Link
JP (1) JPS60118750A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2612169B2 (en) * 1987-07-17 1997-05-21 株匏䌚瀟リコヌ Azo compound and method for producing the same
JP2661116B2 (en) * 1988-03-16 1997-10-08 ミノルタ株匏䌚瀟 Photoconductor

Also Published As

Publication number Publication date
JPS60118750A (en) 1985-06-26

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