JPH03146875A - Photoelectric voltage sensor - Google Patents
Photoelectric voltage sensorInfo
- Publication number
- JPH03146875A JPH03146875A JP1285868A JP28586889A JPH03146875A JP H03146875 A JPH03146875 A JP H03146875A JP 1285868 A JP1285868 A JP 1285868A JP 28586889 A JP28586889 A JP 28586889A JP H03146875 A JPH03146875 A JP H03146875A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- sensor
- impedance
- temperature
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims abstract description 4
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 3
- 238000010521 absorption reaction Methods 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005697 Pockels effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はポッケルス素子を用いた光電圧センサの構造に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to the structure of an optical voltage sensor using a Pockels element.
（従来の技術）
この種の光電圧センサはポッケルス素子に電界を印加す
ることにより複屈折現象、即ちポッケルス効果を生じる
ことを利用して、ポッケルス素子に印加された電圧を出
射光強度を検出することにより測定しようとするもので
ある。第３図はその構成例を示した図である。センサ（
Ａ）はポッケルス素子（１）、１７４波長板（２）およ
び偏光子（３）、検光子（４）で構成されている。その
原理を説明すると、光源（５）より送信された光信号は
センサ（＾）の偏光子（３）で偏光されてからポッケル
ス素子（１）に入光し、ここで電圧（Ｖ）を印加するこ
とによってその電圧の大きさに応じた光変調を受ける。(Prior art) This type of optical voltage sensor uses the phenomenon of birefringence, that is, the Pockels effect, which occurs when an electric field is applied to a Pockels element, and detects the intensity of emitted light from the voltage applied to the Pockels element. It is intended to be measured by FIG. 3 is a diagram showing an example of the configuration. Sensor (
A) is composed of a Pockels element (1), a 174-wave plate (2), a polarizer (3), and an analyzer (4). To explain the principle, the optical signal transmitted from the light source (5) is polarized by the polarizer (3) of the sensor (^) and then enters the Pockels element (1), where a voltage (V) is applied. As a result, light is modulated according to the magnitude of the voltage.
続いて、光偏調を受けた光信号は１／４波長板（２）を
経て検光子（４）へと伝送される。そしてその検光子（
４）から出射される光強度を光受信器（６）で受信、検
出すれば、ポッケルス素子（１）に印加された電圧を測
定することができるというものである。なお、第３図に
おいて（７）は光信号伝送用の光ファイバ、（８）はレ
ンズである。Subsequently, the optical signal subjected to optical polarization is transmitted to an analyzer (4) via a quarter-wave plate (2). And the analyzer (
If the optical receiver (6) receives and detects the light intensity emitted from the Pockels element (1), the voltage applied to the Pockels element (1) can be measured. In FIG. 3, (7) is an optical fiber for optical signal transmission, and (8) is a lens.
（発明が解決しようとする課題）
ところでこの種の光電圧センサの温度特性は温度が変動
することによって光透過損失が増減する温度特性と、光
変調度が変動する温度特性とに分類される。前者の温度
特性は光強度を電気信号に変換する際に割算回路等を設
けておくことで変動要因は削除できるので余り問題とは
ならないが、後者の光変調度の温度特性はポッケルス素
子等光学部品の材質や形状、寸法等により発生し、その
温度特性があるために、実際に素子に印加した電圧と測
定電圧との間に誤差を生しる結果となり、センサとして
の精度が低下して特に精密測定用としてのセンサの使用
に支障をきたすことがあったそこで、この光変調度の温
度特性に起因するセンサの測定誤差をなくするため、従
来では（ア）センサの設置箇所の温度を常に一定にする
、（イ）センサの温度特性を補償するため対策をセンサ
を構成する素子自体に施したポッケルス素子、１／４波
長板等の光学素子を用い、温度特性をなくするなどの改
善法が考えられていたが、（ア〉 の方法ではセンサの
設置場所を考慮する必要性が生し、（イ）の方法では製
作精度の向上が要求されるためにセンサの温度補償の方
法として必ずしも適当な改善法とはいえなかった。(Problems to be Solved by the Invention) The temperature characteristics of this type of optical voltage sensor are classified into temperature characteristics in which light transmission loss increases and decreases as the temperature changes, and temperature characteristics in which the degree of optical modulation changes. The former temperature characteristic is not much of a problem because the fluctuation factor can be removed by providing a dividing circuit etc. when converting the light intensity into an electrical signal, but the latter temperature characteristic of the optical modulation degree is not a problem due to the Pockels element etc. This occurs due to the material, shape, dimensions, etc. of the optical component, and due to its temperature characteristics, it results in an error between the voltage actually applied to the element and the measured voltage, reducing the accuracy of the sensor. In order to eliminate sensor measurement errors caused by the temperature characteristics of the degree of optical modulation, conventional methods have been to (a) measure the temperature at the location where the sensor is installed; (a) To compensate for the temperature characteristics of the sensor, measures are taken to eliminate the temperature characteristics by using optical elements such as Pockels elements and quarter-wave plates on the elements that make up the sensor. Improvement methods have been considered, but method (a) requires consideration of the sensor installation location, and method (b) requires improved manufacturing accuracy, so a method for temperature compensation of the sensor was considered. However, this was not necessarily an appropriate improvement method.
（課題を解決するための手段）
本発明は上記のような課題を解決して、光電圧センサの
ポッケルス素子や１／４波長板等の光学素子の温度特性
に起因する測定誤差をなくする目的で完成されたもので
、ポッケルス素子を含む光電圧センサにおいて、センサ
内部にセンサの温度特性と正反対の温度特性を有する分
圧用インピーダンスを設け、測定電圧を前記分圧用イン
ピーダンスで分圧してポッケルス素子に印加したことを
特徴とする光電圧センサである。(Means for Solving the Problems) The purpose of the present invention is to solve the above-mentioned problems and eliminate measurement errors caused by temperature characteristics of optical elements such as Pockels elements and quarter-wave plates of optical voltage sensors. In an optical voltage sensor that includes a Pockels element, a voltage dividing impedance with a temperature characteristic opposite to that of the sensor is provided inside the sensor, and the measured voltage is divided by the voltage dividing impedance to the Pockels element. This is a photovoltage sensor characterized by applying a voltage.
（実施例及び作用） 以下、図面を用いて本発明を説明する。(Examples and effects) Hereinafter, the present invention will be explained using the drawings.
第１図は従来の光電圧センサの温度補償を行うために、
ポッケルス素子（１）には測定すべき電圧（Ｖ）を分圧
用インピーダンス（Ｚ１）で分圧した電圧（ν、）を印
加した本発明に係る光電圧センサである。Figure 1 shows how to perform temperature compensation for a conventional optical voltage sensor.
This is an optical voltage sensor according to the present invention in which a voltage (v,) obtained by dividing the voltage (V) to be measured by a voltage dividing impedance (Z1) is applied to the Pockels element (1).
ポッケルス素子にはＢ５０（Ｂｉ＋ｚＳｉＯ□。）やＬ
ｉＮｂＯ５など従来より知られている材料を用い出力の
直線性と高い感度を得るために１７４波長板を併用する
。B50 (Bi+zSiO□.) and L are used for Pockels elements.
Conventionally known materials such as iNbO5 are used, and a 174 wavelength plate is used in combination to obtain output linearity and high sensitivity.
なお第１図と第３図において同一部材は同一符号で示さ
れている。Note that the same members are indicated by the same reference numerals in FIGS. 1 and 3.
この分圧用インピーダンス（Ｚ１）には、ポッケルス素
子（１）を含む光電圧センサ（Ａ）の温度特性を打ち消
すような温度特性、即ちポッケルス素子を含む光電圧セ
ンサが正の温度特性を有するのであれば分圧用インピー
ダンスは負の温度特性を有するものを、また、ポッケル
ス素子を含む光電圧センサが負の温度特性を有するので
あれば、分圧用インピーダンスは正の温度特性を有する
ものを用いて温度が変化しても測定電圧に誤差を生じな
いようにしている。第２Ａ図、２Ｂ図、２Ｃ図はその関
係を説明するグラフである。第２Ａ図は温度補償を行な
わない従来のセンサの温度特性図で縦軸は周囲温度２０
℃を基準とした場合の測定電圧の誤差率である。一方、
第２Ｂ図は分圧用インピーダンスの温度特性図で縦軸は
周囲温度２０°Ｃを基準とした場合の分圧用インピーダ
ンス両端電圧の誤差率である。そして、この第２Ａ図お
よび第２Ｂ図の特性を満たすポッケルス素子を含む光電
圧センサと分圧用インピーダンスとを用いて構成した本
発明に係る光電圧センサの温度特性図が第２Ｃ図に示し
たグラフである。この図からも分かるように従来のポッ
ケルス素子を含む光電圧センサの温度依存性は温度補償
用の分圧インピーダンス素子を設けたことにより打ち消
されて温度特性を向上したものが得られている。This voltage dividing impedance (Z1) has a temperature characteristic that cancels out the temperature characteristic of the optical voltage sensor (A) including the Pockels element (1), that is, the optical voltage sensor including the Pockels element has a positive temperature characteristic. For example, if the voltage dividing impedance has a negative temperature characteristic, and if the optical voltage sensor including the Pockels element has a negative temperature characteristic, the voltage dividing impedance should have a positive temperature characteristic. This prevents errors in the measured voltage even if the voltage changes. FIGS. 2A, 2B, and 2C are graphs explaining this relationship. Figure 2A is a temperature characteristic diagram of a conventional sensor that does not perform temperature compensation, and the vertical axis is the ambient temperature 20
This is the error rate of the measured voltage based on °C. on the other hand,
FIG. 2B is a temperature characteristic diagram of the voltage dividing impedance, and the vertical axis represents the error rate of the voltage across the voltage dividing impedance with reference to the ambient temperature of 20°C. FIG. 2C shows a temperature characteristic diagram of the optical voltage sensor according to the present invention, which is constructed using an optical voltage sensor including a Pockels element that satisfies the characteristics shown in FIGS. 2A and 2B, and a voltage dividing impedance. It is. As can be seen from this figure, the temperature dependence of the conventional optical voltage sensor including a Pockels element is canceled by providing a partial voltage impedance element for temperature compensation, resulting in an improved temperature characteristic.
このようなインピーダンス素子としては長期劣化特性の
良いセラミック系材料を使用するのが好ましく、測定用
の絶対値のみが必要であるならばセラＱ ７クコンデン
サやインダクタンスなどのインピーダンス素子を使用し
、位相特性や高周波電圧などの測定が必要であるならば
セラミックレジスタなどの抵抗素子を使用する。また、
センサヘの人力過電圧による破壊を防止するためにＺｎ
Ｏ素子などのサージ吸収機能を有する材料も使用できる
。ここで測定精度の向上のため、コンデンサやインダク
タンスあるいは抵抗素子の人力インピーダンスは数１０
０ＭΩ以上とする必要がある。なお、セラミック系の誘
電体素子や抵抗素子の温度特性は一般的に一２０°Ｃ〜
８０゛Ｃで士数％〜数十％であるが、個々の材料の添加
物の種類やその配合割合を代えたりすることで最適の温
度特性のものを製造することが可能である。It is preferable to use a ceramic material with good long-term deterioration characteristics as such an impedance element.If only absolute values are required for measurement, use an impedance element such as a Ceramic capacitor or an inductance to determine the phase. If it is necessary to measure characteristics, high frequency voltage, etc., a resistance element such as a ceramic resistor is used. Also,
Zn to prevent damage to the sensor due to manual overvoltage.
Materials having a surge absorption function such as O elements can also be used. Here, in order to improve measurement accuracy, the human impedance of the capacitor, inductance, or resistance element is several tens of thousands.
It is necessary to set it to 0MΩ or more. Note that the temperature characteristics of ceramic dielectric elements and resistance elements are generally -20°C to
At 80°C, the temperature is from a few percent to several tens of percent, but it is possible to manufacture products with optimal temperature characteristics by changing the types of additives and their blending ratios for individual materials.
（発明の効果）
このように構成されたものは、ポッケルス素子を含む光
電圧センサ内部に該センサの温度特性と正反対の温度特
性を有する分圧用インピーダンスを設けるという簡単な
構成をとるだけでセンサを構成するポッケルス素子や他
の光学素子の温度依存性を無視でき精度良く電圧を測定
することができる。そして、センサの温度管理をする設
備も不要で使用温度範囲内の温度であれば取付は場所を
限定する必要もないので安価な設備で足りる。(Effects of the Invention) The sensor configured as described above can be operated simply by providing a partial voltage impedance having a temperature characteristic opposite to that of the sensor inside the optical voltage sensor including the Pockels element. The temperature dependence of the Pockels element and other optical elements constituting the device can be ignored, and voltage can be measured with high accuracy. Further, there is no need for equipment to control the temperature of the sensor, and if the temperature is within the operating temperature range, there is no need to limit the installation location, so inexpensive equipment is sufficient.
さらに入力電圧（測定電圧）は分圧インピーダンスが入
っているため、従来より高電圧の測定を安全に行なうこ
とも可能となり、従来の問題点を一掃した光電圧センサ
として、産業の発展に寄与するところは極めて大である
。Furthermore, since the input voltage (measured voltage) includes a voltage dividing impedance, it is now possible to safely measure higher voltages than before, contributing to the development of industry as an optical voltage sensor that eliminates the problems of conventional methods. The place is extremely large.
第１図は本発明の光電圧センサを用いた電圧測定装置を
示すブロック図、第２Ａ図はポッケルス素子を含む従来
の電圧センサの温度特性図、第２Ｂ図は分圧用インピー
ダンスの温度特性図、第２Ｃ図は温度補償後の光電圧セ
ンサの温度特性図、第３図は従来の温度補償を行ってい
ない光電圧センサのブロック図である。
（Ａ）：光電圧センサ、（Ｖ）：測定電圧、（Ｚ１）：
分圧用インピーダンス、（１）：ポッケルス素子、（２
） ： １／４波長板、（３）：偏光子、（４）：検光
子、（５）：光源、（６）：光受信器、（７）：光ファ
イバー（８）：レンズ。
第２Ａ図
第２Ｃ図FIG. 1 is a block diagram showing a voltage measuring device using the optical voltage sensor of the present invention, FIG. 2A is a temperature characteristic diagram of a conventional voltage sensor including a Pockels element, and FIG. 2B is a temperature characteristic diagram of a voltage dividing impedance. FIG. 2C is a temperature characteristic diagram of the optical voltage sensor after temperature compensation, and FIG. 3 is a block diagram of a conventional optical voltage sensor without temperature compensation. (A): Photovoltage sensor, (V): Measured voltage, (Z1):
Impedance for voltage division, (1): Pockels element, (2
): 1/4 wavelength plate, (3): polarizer, (4): analyzer, (5): light source, (6): optical receiver, (7): optical fiber (8): lens. Figure 2A Figure 2C
Claims (3)
において、センサ内部にセンサの温度特性と正反対の温
度特性を有する分圧用インピーダンス（Ｚ１）を設け、
測定電圧（Ｖ）を前記分圧用インピーダンス（Ｚ＿１）
で分圧してポッケルス素子（１）に印加したことを特徴
とする光電圧センサ。(1) Optical voltage sensor (A) including Pockels element (1)
, a partial pressure impedance (Z1) having a temperature characteristic opposite to that of the sensor is provided inside the sensor,
The measured voltage (V) is connected to the voltage dividing impedance (Z_1)
A photovoltage sensor characterized in that a voltage is divided by voltage and applied to a Pockels element (1).
酸系セラミックコンデンサまたはインダクタンスである
請求項１記載の光電圧センサ。(2) The optical voltage sensor according to claim 1, wherein the voltage dividing impedance (Z_1) is a titanate ceramic capacitor or an inductance.
クレジスターである請求項１記載の光電圧センサ（４）
前記分圧用インピーダンス（Ｚ＿１）がサージ吸収機能
を備えた材料である請求項１記載の光電圧センサ。(3) The optical voltage sensor (4) according to claim 1, wherein the voltage dividing impedance (Z_1) is a ceramic resistor.
The optical voltage sensor according to claim 1, wherein the partial voltage impedance (Z_1) is made of a material having a surge absorption function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1285868A JPH03146875A (en) | 1989-10-31 | 1989-10-31 | Photoelectric voltage sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1285868A JPH03146875A (en) | 1989-10-31 | 1989-10-31 | Photoelectric voltage sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03146875A true JPH03146875A (en) | 1991-06-21 |
Family
ID=17697079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1285868A Pending JPH03146875A (en) | 1989-10-31 | 1989-10-31 | Photoelectric voltage sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03146875A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0510982A (en) * | 1991-06-28 | 1993-01-19 | Kubota Corp | Engine-driven welder |
| DE102017207333A1 (en) | 2016-05-06 | 2017-11-09 | Toyota School Foundation | voltage sensor |
| DE102017218039A1 (en) | 2016-10-11 | 2018-04-12 | Toyota School Foundation | voltage sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290569A (en) * | 1985-09-06 | 1987-04-25 | Toshiba Corp | Optical sensor for measuring ac voltage |
-
1989
- 1989-10-31 JP JP1285868A patent/JPH03146875A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290569A (en) * | 1985-09-06 | 1987-04-25 | Toshiba Corp | Optical sensor for measuring ac voltage |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0510982A (en) * | 1991-06-28 | 1993-01-19 | Kubota Corp | Engine-driven welder |
| DE102017207333A1 (en) | 2016-05-06 | 2017-11-09 | Toyota School Foundation | voltage sensor |
| US10401394B2 (en) | 2016-05-06 | 2019-09-03 | Yazaki Corporation | Voltage sensor |
| DE102017218039A1 (en) | 2016-10-11 | 2018-04-12 | Toyota School Foundation | voltage sensor |
| US10422820B2 (en) | 2016-10-11 | 2019-09-24 | Yazaki Corporation | Voltage sensor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CA1199068A (en) | Voltage and electric field measuring device using light | |
| US2584800A (en) | Overload protection device for electrical instruments | |
| CN106017533A (en) | Rapid tuning real-time calibration fiber grating demodulation device and work method | |
| US3636444A (en) | Apparatus for measuring small changes in condition-sensitive capacitance transducers | |
| CN106841748A (en) | Full light path voltage measurement system and method based on inverse piezoelectric effect and fiber grating | |
| JP2986503B2 (en) | Optical DC voltage transformer | |
| US3346817A (en) | Temperature independent amplifier and method | |
| CA3061223C (en) | Null detector devices and systems employing same | |
| CN210982613U (en) | A Dielectric Polarization Capacitive Electrostatic Field Measurement System | |
| CN106595862A (en) | Device employing raster to carry out spectral analysis on adjustable FP temperature and non-linear compensation | |
| US4733173A (en) | Electronic component measurement apparatus | |
| CN109990822B (en) | A frequency response calibration device and method for a photoelectric detection module | |
| US2621229A (en) | Means for comparing or measuring the constants of electric circuit elements | |
| KR860001475B1 (en) | Vacuum degree monitoring device of vacuum electric equipment | |
| JPH09251036A (en) | Optical electric-field sensor and transformer for optical instrument using sensor thereof | |
| US2929993A (en) | Peak wattmeter | |
| US2799827A (en) | Transistor testing apparatus | |
| SU756313A1 (en) | MEASURING CONVERTER ACTIVE ELECTRICAL CONDUCTIVITY IN VOLTAGE 1 2 | |
| SU566192A1 (en) | Electrometric amplifier | |
| SU698137A1 (en) | Transmission coefficient checking device | |
| SU531084A1 (en) | Parametric Conversion Device | |
| SU576549A1 (en) | Four-pole network amplitude characteristic non-linearity meter | |
| RU2162238C1 (en) | Aerological radiosonde | |
| SU1259101A1 (en) | Device for measuring dielectric band width | |
| SU1486939A1 (en) | DEVICE FOR CALIBRATION OF MEASURING RESISTANT BRIDGES |