JPH03159143A - Plasma cleaning device of substrate in pre-process of wire bonding - Google Patents

Plasma cleaning device of substrate in pre-process of wire bonding

Info

Publication number
JPH03159143A
JPH03159143A JP1298255A JP29825589A JPH03159143A JP H03159143 A JPH03159143 A JP H03159143A JP 1298255 A JP1298255 A JP 1298255A JP 29825589 A JP29825589 A JP 29825589A JP H03159143 A JPH03159143 A JP H03159143A
Authority
JP
Japan
Prior art keywords
casing
substrate
conveyor
mount part
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1298255A
Other languages
Japanese (ja)
Other versions
JP2705255B2 (en
Inventor
Mitsuru Osono
満 大園
Kazuhiro Noda
和宏 野田
Isamu Morisako
勇 森迫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1298255A priority Critical patent/JP2705255B2/en
Publication of JPH03159143A publication Critical patent/JPH03159143A/en
Application granted granted Critical
Publication of JP2705255B2 publication Critical patent/JP2705255B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01571—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To acquire a device to remove impurity attaching to an electrode part of a substrate cleanly with good operativity before a wire bonding process by providing specified casing, electrode part, vacuum pump, mount part of a substrate, conveyor, delivery means and cover member. CONSTITUTION:A device is provided with a casing 1 whereto plasma discharging gas is supplied, an electrode part 3 to produce plasma by applying a high frequency alternating voltage to the casing 1, a vacuum pump 6 to such gas inside the casing 1, a mount part 10 of a substrate 20 which goes in and out inside the casing 1 from an opening part which is opened to the casing driven by transfer means 12, 13, a conveyor 17 to transfer the substrate 20 in a direction crossing with the mount part 10, and a delivery means 21 to deliver the substrate 20 to the conveyor 17 and the mount part 10 by reciprocating between the conveyor 17 and the mount part 10, and a cover member 11 to open and close the opening part by moving together with the mount part 10 behind the mount part 10.

Description

【発明の詳細な説明】 （産業上の利用分野） 本発明はワイヤボンディングの前工程における基板のプ
ラズマクリーニング装置に関し、詳しくは、基板に付着
する不純物を不活性ガスにより作業性よく除去するため
の手段に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a plasma cleaning device for a substrate in a pre-process of wire bonding. Concerning means.

（従来の技術） 半導体装置の製造工程において、基板に搭載された半導
体チップの電極と、基板の電極とをワイヤで接続するこ
とが行われる。このようなワイヤボンディング工程にお
いて、基板の電極に不純物が付着していると、ワイヤを
電極にしっかりと接合させることはできない。この不純
物としては、作業者が基板を手で取り扱った場合に付着
する手脂、空気中に浮遊するガス化したオイル、電極表
面に自然形成される酸化膜、空気中の酸素やチッソなど
のガス吸着膜等がある。(Prior Art) In the manufacturing process of a semiconductor device, an electrode of a semiconductor chip mounted on a substrate and an electrode of the substrate are connected with a wire. In such a wire bonding process, if impurities adhere to the electrodes of the substrate, the wires cannot be firmly bonded to the electrodes. These impurities include hand oil that adheres when workers handle the substrate with their hands, gasified oil floating in the air, oxide films that naturally form on the electrode surface, and gases such as oxygen and nitrogen in the air. There are adsorption membranes, etc.

ワイヤボンディングに先立って、このような不純物を除
去するための手段として、従来、超音波洗浄が行われて
いた。超音波洗浄は、基板を純水などのクリーニング液
中に浸漬し、このクリーニング液に超音波を印加して、
物理的に不純物を除去する手段である。Conventionally, ultrasonic cleaning has been performed as a means to remove such impurities prior to wire bonding. Ultrasonic cleaning involves immersing the substrate in a cleaning liquid such as pure water and applying ultrasonic waves to this cleaning liquid.
It is a means of physically removing impurities.

（発明が解決しようとする課題） ところが超音波洗浄手段は、その後に熱風を吹き付ける
などして基板を乾燥させねばならないため、手間と時間
を要し、また乾燥させると、クリーニング液がしみとな
って基板表面に残存しやすい等の問題があった。(Problem to be Solved by the Invention) However, the ultrasonic cleaning method requires time and effort to dry the substrate by blowing hot air on it afterward, and when it is dried, the cleaning liquid becomes a stain. There have been problems such as the fact that it tends to remain on the surface of the substrate.

そこで本発明は、従来手段の問題を解消できる基板のク
リーニング手段を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate cleaning means that can solve the problems of the conventional means.

（課題を解決するための手段） このために本発明は、プラズマ放電用ガスが供給される
ケーシングと、このケーシングに高周波交流電圧を印加
してプラズマを発生させる電極部と、このケーシングの
内部のガスを吸引する真空ポンプと、移動手段に駆動さ
れて、このケーシングに開口された開口部から、このケ
ーシングの内部に出入する基板の載置部と、基板をこの
載置部と交差する方向に搬送するコンベヤと、このコン
ベヤとこの載置部の間を往復動して、このコンベヤと載
置部に基板を受け渡しする受け渡し手段と、上記載置部
の後方にあって、この載置部とともに移動することによ
り、上記開口部を開閉する蓋部材とから基板のプラズマ
クリーニング装置を構成している。(Means for Solving the Problems) To this end, the present invention provides a casing to which a plasma discharge gas is supplied, an electrode section for generating plasma by applying a high-frequency AC voltage to the casing, and an internal structure of the casing. A vacuum pump that sucks gas, a substrate mounting section that is driven by a moving means to move the substrate in and out of the casing through an opening in the casing, and a substrate mounting section that moves the substrate in a direction crossing the mounting section. a conveyor for conveying; a transfer means that reciprocates between the conveyor and the mounting section to deliver the substrates to the conveyor and the mounting section; A plasma cleaning device for a substrate is constituted by a lid member that opens and closes the opening by moving.

（作用） 上記構成において、コンベヤにより搬送されてきた基板
は、受け渡し手段により載置部に搭載され、ケーシング
の内部に収納される。次いで電極部に高周波交流電圧を
印加することにより、ケーシングの内部にはプラズマが
発生し°、ガス分子やイオンが高速運動することにより
、基板表面に付着する不純物を除去する。除去が終了す
れば、載置部はケーシングから取り出され、基板は載置
部からコンベヤへ受け渡されて、次のワイヤポンディン
グ工程へ搬送される。(Function) In the above configuration, the substrate transported by the conveyor is mounted on the mounting section by the delivery means and stored inside the casing. Next, by applying a high frequency alternating current voltage to the electrode section, plasma is generated inside the casing, and gas molecules and ions move at high speed, thereby removing impurities adhering to the substrate surface. When the removal is completed, the mounting section is taken out from the casing, and the substrate is transferred from the mounting section to a conveyor and transported to the next wire bonding process.

（実施例） 次に、図面を参照しながら本発明の詳細な説明する。(Example) Next, the present invention will be described in detail with reference to the drawings.

第１図はプラズマクリーニング装置の平面図、第２図は
側面図、第３図は断面図である。１は円筒形のガラス製
ケーシングであり、その前端面には開口部２が開口され
ている。このケーシング１の周面には、アルミ板製の電
極部３が配設されている。４はこの電極部３に高周波交
流電圧を印加する電源である。ケーシング１の上部には
パイプ５が接続されており、このパイプ５からケーシン
グｌ内に、プラズマ放電用ガスとして、Ａｒガスのよう
な不活性ガスが供給される。またケーシングｌの下部に
は、ケーシング１内のガスを吸引するロータリー真空ポ
ンプ６が連結されており、またその後端面にはバルブ７
が接続されている。９は真空ポンプ６のバルブである。FIG. 1 is a plan view of the plasma cleaning apparatus, FIG. 2 is a side view, and FIG. 3 is a sectional view. Reference numeral 1 denotes a cylindrical glass casing, and an opening 2 is opened in the front end surface of the casing. An electrode section 3 made of an aluminum plate is arranged on the circumferential surface of the casing 1. Reference numeral 4 denotes a power source that applies a high frequency AC voltage to this electrode section 3. A pipe 5 is connected to the upper part of the casing 1, and an inert gas such as Ar gas is supplied from the pipe 5 into the casing 1 as a plasma discharge gas. Further, a rotary vacuum pump 6 for sucking gas inside the casing 1 is connected to the lower part of the casing l, and a valve 7 is connected to the rear end surface.
is connected. 9 is a valve of the vacuum pump 6.

１０は上記開口部２の前部に配設されたアルミ板から成
る載置部であって、その後部には開口部２の蓋部材１１
が装着されている。蓋部材１１は、ナツト部１２に立設
されたブラケット１４に支持されている。１３はこのナ
ツト部１２が螺合する送りねじ、１５はその駆動用モー
タであり、モータ１５が駆動すると、ナツト部１２は送
りねじ１３に沿ってＹ方向に移動し、載置部１０は開口
部２からケーシング１の内部に出入する。また蓋部材１
１は載置部ｌＯと一体的に移動し、開口部２を開閉する
。すなわち上記ナツト部１２と送りねじ１３は、載置部
１０をＹ方向に往復移動させる移動手段を構成している
。Reference numeral 10 denotes a mounting part made of an aluminum plate disposed in the front part of the opening 2, and a lid member 11 of the opening 2 is placed in the rear part of the mounting part 10.
is installed. The lid member 11 is supported by a bracket 14 erected on the nut portion 12. 13 is a feed screw into which this nut portion 12 is screwed, and 15 is a driving motor thereof. When the motor 15 is driven, the nut portion 12 moves in the Y direction along the feed screw 13, and the mounting portion 10 is opened. The part 2 enters and exits the inside of the casing 1. Also, the lid member 1
1 moves integrally with the mounting portion 10 to open and close the opening 2. That is, the nut portion 12 and the feed screw 13 constitute a moving means for reciprocating the mounting portion 10 in the Y direction.

１７．１８は、載置部ＩＯを挟んで、この載置部１０と
交差する方向に配設されたコンベヤであって、基板２０
を上記載置部１０の移動方向であるＹ方向と交差するＸ
方向に搬送する。17 and 18 are conveyors disposed in a direction intersecting the placing unit 10 with the placing unit IO in between, and are conveyors that carry the substrates 20
is an X that intersects with the Y direction, which is the moving direction of the mounting section 10 described above.
transport in the direction.

１９は基板２０を停止させるストッパーである。A stopper 19 stops the substrate 20.

２１は基板２０の受け渡し手段であって、コンベヤ１７
と載置部１０の間、及び載置部ｌＯとコンベヤ１８の間
をＸ方向に往復動し、基板２０を吸着パッド２２に吸着
して受け渡しする。Reference numeral 21 denotes a means for transferring the substrate 20, and the conveyor 17
It reciprocates in the X direction between the mounting section 10 and the mounting section 10, and between the mounting section 10 and the conveyor 18, and transfers the substrate 20 by suctioning it to the suction pad 22.

基板２０はセラミック、ガラス、ガラスエポキシなどに
より形成されており、またその表面には、銀、パラジウ
ム、金、銅などにより、電極部が形成されている。The substrate 20 is made of ceramic, glass, glass epoxy, etc., and electrode portions made of silver, palladium, gold, copper, etc. are formed on its surface.

上記構成のクリーニグ装置は、ワイヤボンディングの前
工程として基板をクリーニングするものであり、次に動
作の説明を行う。The cleaning device configured as described above cleans the substrate as a pre-process of wire bonding, and its operation will be explained next.

コンベヤ１７により搬送されてきた基ｖｉ２０は、スト
ッパー１９に当って停止する。そこで受け渡し手段２１
はこの基板２０を吸着してティクアップし、載置部１０
に移載する。このとき載置部ｌＯは、モータ１５が駆動
することにより、ケーシング１へ向ってピッチ送りされ
ており、このピッチ送りに同期して、受け渡し手段２１
がコンベヤ１７と載置部１０の間を往復して基板２０を
載置部ｌＯに移載することによ−り、基板２０は載置部
１０に１枚づつ順に整列して搭載される。The group vi20 conveyed by the conveyor 17 hits the stopper 19 and stops. Therefore, delivery means 21
attracts and ticks up this substrate 20, and places it on the mounting section 10.
Transferred to. At this time, the mounting portion lO is pitch-fed toward the casing 1 by driving the motor 15, and in synchronization with this pitch-feeding, the transfer means 21
The substrates 20 are reciprocated between the conveyor 17 and the mounting section 10 to transfer the substrates 20 onto the mounting section 10, so that the substrates 20 are sequentially arranged and mounted on the mounting section 10 one by one.

このようにして多数枚の基板２０が搭載されると、載置
部ｌＯはケーシングｌ内に完全に進入し、蓋部材１１は
開口部２を閉塞する（第１図鎖線参照）。次いで真空ポ
ンプ６が作動し、ケーシング１内は減圧されるとともに
、ケーシングｌ内にＡ「ガスが供給され、次いで電極部
３に高周波交流電圧が印加されることにより、プラズマ
が発生する。この時、Ａｒガスの一部はイオン化し、Ａ
ｒガス分子や、イオン化したＡｆ＋、マイナス電子はケ
ーシング１内を激しく高速運動し、基板２０の表面に衝
突して電極部に付着する不純物を除去し、除去された不
純物は真空ポンプ６に吸引される。When a large number of substrates 20 are mounted in this manner, the mounting portion 10 completely enters into the casing 1, and the lid member 11 closes the opening 2 (see the chain line in FIG. 1). Next, the vacuum pump 6 is activated to reduce the pressure inside the casing 1, and gas A is supplied to the inside of the casing 1. Then, a high-frequency AC voltage is applied to the electrode section 3, thereby generating plasma. , a part of the Ar gas is ionized, and A
The r gas molecules, ionized Af+, and negative electrons move violently and at high speed within the casing 1, collide with the surface of the substrate 20, and remove impurities adhering to the electrode portion, and the removed impurities are sucked into the vacuum pump 6. Ru.

このようにして不純物を除去したならば、真空ポンプ６
のバルブ９を閉じるとともに、バルブ７を開いてケーシ
ングｌ内を常圧にもどす。After removing impurities in this way, the vacuum pump 6
At the same time, valve 9 is closed and valve 7 is opened to return the inside of the casing l to normal pressure.

次いで載置部ｌＯを先程と逆方向にピッチ送りしてケー
シング１から引き出す。このとき、このピンチ送りに同
期して、受け渡し手段２１は載置部１０とコンベヤ１８
の間を往復し、基板２０をコンベヤ１８に受け渡し、次
のワイヤボンディング工程へ搬送する。Next, the mounting portion 1O is pitch-fed in the opposite direction to the previous direction and pulled out from the casing 1. At this time, in synchronization with this pinch feeding, the transfer means 21 transfers the transfer means 21 between the placing section 10 and the conveyor 18.
The substrate 20 is delivered to the conveyor 18 and transported to the next wire bonding process.

以上のように本手段は、載置部１０をＹ方向にピンチ送
りしてケーシング１．内に出し入れしながら、基板２０
の載置部１０への移載やこれからの取り卸しを行うよう
にしているので、作業性がきわめて良く、しかも載置部
ｌＯの出し入れとともに、蓋部材１１により開口部２を
開閉できるので、運転管理も簡単等の利点を有する。As described above, the present means pinch-feeds the mounting section 10 in the Y direction to move the casing 1. While inserting and removing the board 20
The work efficiency is very good because the transfer to the loading section 10 and the subsequent unloading of the loading section 10 are carried out, and the opening 2 can be opened and closed by the lid member 11 while the loading section 10 is being taken in and out. It also has advantages such as easy management.

（発明の効果） 以上説明したように本発明は、プラズマ放電用ガスが供
給されるケーシングと、このケーシングに高周波交流電
圧を印加してプラズマを発生させる電極部と、このケー
シングの内部のガスを吸引する真空ポンプと、移動手段
に駆動されて、このケーシングに開口された開口部から
、このケーシングの内部に出入する基板の載置部と、基
板をこの載置部と交差する方向に搬送するコンベヤと、
このコンベヤとこの載置部の間を往復動して、このコン
ベヤと載置部に基板を受け渡しする受け渡し手段と、上
記載置部の後方にあって、この載置部とともに移動する
ことにより、上記開口部を開閉する蓋部材とを備えてい
るので、ワイヤボンディング工程に先立って、基板の電
極部に付着する不純物をきわめて作業性よく、かつきれ
いに除去することができる。(Effects of the Invention) As explained above, the present invention includes a casing to which a plasma discharge gas is supplied, an electrode part that generates plasma by applying a high frequency AC voltage to the casing, and a gas inside the casing. A vacuum pump for suction, a substrate mounting section that is driven by a moving means to move in and out of the casing from an opening in the casing, and a substrate that is transported in a direction intersecting the mounting section. conveyor and
A delivery means that reciprocates between the conveyor and the placing section and delivers the substrates to the conveyor and the placing section, and a transfer means that is located behind the placing section and moves together with the placing section; Since the present invention includes a lid member for opening and closing the opening, impurities adhering to the electrode portion of the substrate can be removed cleanly and with excellent workability prior to the wire bonding process.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明の実施例を示すものであって、第１図はクリ
ーニング装置の平面図、第２図は側面図、第３図は断面
図、第４図は移載中の側面図である。 ■・・・ケーシング ２・・・開口部 ３・・・電極部 ６・・・真空ポンプ ＩＯ・・・載置部 １１・・・蓋部材 １２．１３・・・移動手段 １７．１８・・・コンベヤ ２０ ・基板 ・受け渡し手段The drawings show an embodiment of the present invention, in which Fig. 1 is a plan view of the cleaning device, Fig. 2 is a side view, Fig. 3 is a sectional view, and Fig. 4 is a side view during transfer. . ■...Casing 2...Opening 3...Electrode part 6...Vacuum pump IO...Placement part 11...Lid member 12.13...Movement means 17.18... Conveyor 20 ・Substrate ・Delivery means

Claims (1)

【特許請求の範囲】[Claims] 　プラズマ放電用ガスが供給されるケーシングと、この
ケーシングに高周波交流電圧を印加してプラズマを発生
させる電極部と、このケーシングの内部のガスを吸引す
る真空ポンプと、移動手段に駆動されて、このケーシン
グに開口された開口部から、このケーシングの内部に出
入する基板の載置部と、基板をこの載置部と交差する方
向に搬送するコンベヤと、このコンベヤとこの載置部の
間を往復動して、このコンベヤと載置部に基板を受け渡
しする受け渡し手段と、上記載置部の後方にあって、こ
の載置部とともに移動することにより、上記開口部を開
閉する蓋部材とを備えていることを特徴とするワイヤボ
ンディングの前工程における基板のプラズマクリーニン
グ装置。A casing to which plasma discharge gas is supplied, an electrode part that generates plasma by applying a high-frequency AC voltage to this casing, a vacuum pump that sucks gas inside this casing, and a moving means that drives this A mounting section for substrates that enters and exits the inside of the casing through an opening in the casing, a conveyor that transports the substrate in a direction crossing this mounting section, and a reciprocating system that moves between the conveyor and this mounting section. a transfer means that moves to deliver substrates to the conveyor and the placing section; and a lid member that is located behind the placing section and opens and closes the opening by moving together with the placing section. A plasma cleaning device for a substrate in a pre-process of wire bonding, characterized in that:
JP1298255A 1989-11-16 1989-11-16 Plasma cleaning device for substrate in pre-process of wire bonding Expired - Fee Related JP2705255B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1298255A JP2705255B2 (en) 1989-11-16 1989-11-16 Plasma cleaning device for substrate in pre-process of wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1298255A JP2705255B2 (en) 1989-11-16 1989-11-16 Plasma cleaning device for substrate in pre-process of wire bonding

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JPH03159143A true JPH03159143A (en) 1991-07-09
JP2705255B2 JP2705255B2 (en) 1998-01-28

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433371A (en) * 1992-10-15 1995-07-18 Matsushita Electric Industrial Co., Ltd. Wire bonding apparatus and method
US6033586A (en) * 1996-09-18 2000-03-07 Matsushita Electric Industrial Co., Ltd. Apparatus and method for surface treatment
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3149503B2 (en) 1992-02-24 2001-03-26 松下電器産業株式会社 Plasma cleaning equipment for substrates

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5433371A (en) * 1992-10-15 1995-07-18 Matsushita Electric Industrial Co., Ltd. Wire bonding apparatus and method
US6808592B1 (en) 1994-12-05 2004-10-26 Nordson Corporation High throughput plasma treatment system
US7201823B2 (en) 1994-12-05 2007-04-10 Nordson Corporation High throughput plasma treatment system
US6033586A (en) * 1996-09-18 2000-03-07 Matsushita Electric Industrial Co., Ltd. Apparatus and method for surface treatment
US6972071B1 (en) 1999-07-13 2005-12-06 Nordson Corporation High-speed symmetrical plasma treatment system
US6709522B1 (en) 2000-07-11 2004-03-23 Nordson Corporation Material handling system and methods for a multichamber plasma treatment system
US6841033B2 (en) 2001-03-21 2005-01-11 Nordson Corporation Material handling system and method for a multi-workpiece plasma treatment system

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