JPH03159998A - Ｉｎ添加無転位引上げガリウム砒素単結晶 - Google Patents

Ｉｎ添加無転位引上げガリウム砒素単結晶

Info

Publication number
JPH03159998A
JPH03159998A JP1202022A JP20202289A JPH03159998A JP H03159998 A JPH03159998 A JP H03159998A JP 1202022 A JP1202022 A JP 1202022A JP 20202289 A JP20202289 A JP 20202289A JP H03159998 A JPH03159998 A JP H03159998A
Authority
JP
Japan
Prior art keywords
concentration
single crystal
seed crystal
free
pulled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1202022A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517196B2 (2
Inventor
Toru Takahashi
徹 高橋
Shinichi Takahashi
伸一 高橋
Masateru Takaya
高屋　征輝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Handotai Co Ltd
Original Assignee
Shin-Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Handotai Co Ltd filed Critical Shin-Etsu Handotai Co Ltd
Priority to JP1202022A priority Critical patent/JPH03159998A/ja
Publication of JPH03159998A publication Critical patent/JPH03159998A/ja
Publication of JPH0517196B2 publication Critical patent/JPH0517196B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP1202022A 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶 Granted JPH03159998A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1202022A JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1202022A JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP60065504A Division JPS61222991A (ja) 1985-03-29 1985-03-29 ガリウム砒素単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPH03159998A true JPH03159998A (ja) 1991-07-09
JPH0517196B2 JPH0517196B2 (2) 1993-03-08

Family

ID=16450628

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1202022A Granted JPH03159998A (ja) 1989-08-03 1989-08-03 Ｉｎ添加無転位引上げガリウム砒素単結晶

Country Status (1)

Country Link
JP (1) JPH03159998A (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10298000A (ja) * 1997-04-28 1998-11-10 Dowa Mining Co Ltd 板状単結晶およびその製造方法
WO1999034037A1 (fr) * 1997-12-25 1999-07-08 Japan Energy Corporation Procede de preparation de monocristaux de composes semi-conducteurs, equipement pour ce procede et monocristaux de composes semi-conducteurs

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10298000A (ja) * 1997-04-28 1998-11-10 Dowa Mining Co Ltd 板状単結晶およびその製造方法
WO1999034037A1 (fr) * 1997-12-25 1999-07-08 Japan Energy Corporation Procede de preparation de monocristaux de composes semi-conducteurs, equipement pour ce procede et monocristaux de composes semi-conducteurs

Also Published As

Publication number Publication date
JPH0517196B2 (2) 1993-03-08

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