JPH0316324U - - Google Patents

Info

Publication number
JPH0316324U
JPH0316324U JP7647289U JP7647289U JPH0316324U JP H0316324 U JPH0316324 U JP H0316324U JP 7647289 U JP7647289 U JP 7647289U JP 7647289 U JP7647289 U JP 7647289U JP H0316324 U JPH0316324 U JP H0316324U
Authority
JP
Japan
Prior art keywords
nozzle
gas
holes
ejection holes
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7647289U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7647289U priority Critical patent/JPH0316324U/ja
Publication of JPH0316324U publication Critical patent/JPH0316324U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第1図は本考案CVD用ガスノズルを適用でき
るCVD装置の一例を示す簡略縦断面図、第2図
a,bはそれぞれ本考案CVD用ガスノズルの一
実施例を示す縦断面図及びその−線断面図、
第3図a,bはそれぞれ他の実施例を示す縦断面
図及びその−線断面図、第4図は従来のCV
D用ガスノズルの一例を示す縦断面図である。 3……ガスノズル、4……ガス噴出孔、4a…
…等径孔部分、4b……(テーパ状またはラツパ
状)異径孔部分、5……反応室。

Claims (1)

    【実用新案登録請求の範囲】
  1. 反応室5内に反応ガス及びキヤリアガスを供給
    するための、複数のガス噴出孔4を有するガスノ
    ズル3において、ガス噴出孔4が、ノズル内側の
    等径孔部分4aと、ノズル外側の孔径がノズル外
    面に向つて徐々に大きくなる異径孔部分4bとか
    らなるCVD用ガスノズル。
JP7647289U 1989-06-28 1989-06-28 Pending JPH0316324U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7647289U JPH0316324U (ja) 1989-06-28 1989-06-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7647289U JPH0316324U (ja) 1989-06-28 1989-06-28

Publications (1)

Publication Number Publication Date
JPH0316324U true JPH0316324U (ja) 1991-02-19

Family

ID=31617974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7647289U Pending JPH0316324U (ja) 1989-06-28 1989-06-28

Country Status (1)

Country Link
JP (1) JPH0316324U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017056155A1 (ja) * 2015-09-28 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017056155A1 (ja) * 2015-09-28 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JPWO2017056155A1 (ja) * 2015-09-28 2018-06-28 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
US10287680B2 (en) 2015-09-28 2019-05-14 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

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