JPH0316725B2 - - Google Patents

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Publication number
JPH0316725B2
JPH0316725B2 JP59155180A JP15518084A JPH0316725B2 JP H0316725 B2 JPH0316725 B2 JP H0316725B2 JP 59155180 A JP59155180 A JP 59155180A JP 15518084 A JP15518084 A JP 15518084A JP H0316725 B2 JPH0316725 B2 JP H0316725B2
Authority
JP
Japan
Prior art keywords
wire
vanadium
gallium
magnetic field
atomic percent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59155180A
Other languages
Japanese (ja)
Other versions
JPS6134811A (en
Inventor
Kyoji Tachikawa
Hiroaki Kumakura
Kazumasa Togano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Original Assignee
KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO filed Critical KAGAKU GIJUTSUCHO KINZOKU ZAIRYO GIJUTSU KENKYU SHOCHO
Priority to JP59155180A priority Critical patent/JPS6134811A/en
Publication of JPS6134811A publication Critical patent/JPS6134811A/en
Publication of JPH0316725B2 publication Critical patent/JPH0316725B2/ja
Granted legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

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  • Superconductors And Manufacturing Methods Therefor (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明は繊維分散型V3Ga超電導線材の製造法
に関する。更に詳しくは電気機器、エネルギー貯
蔵、核融合炉、NMR分析装置、高エネルギー物
理用粒子加速器などに広く利用される繊維分散型
V3Ga超電導線材の強磁界特性を改善する製造法
に関する。 従来技術 強磁界発生用電磁石の巻線材として使用される
超電導線材をしては、従来Nb−Ti系の合金線材
が主として用いられているが、その発生磁界の限
度は8.5T(85000ガウス)であり、これ以上の強
磁界を必要とする場合は臨界磁界の高い化合物系
超電導体を用いる必要がある。 しかし、化合物系超電導体は可塑性に欠け実用
化を妨げていたが、近年表面拡散法や複合加工法
などの拡散を利用する方法が発明され、V3Ga
(臨界温度Tc=約15K、臨界磁界Hc2=約22T)、
Nb3Sn(臨界温度Tc=約18K、臨界磁界Hc2=約
21T)の化合物超電導線材が実用化されるように
なつた。その内複合加工法によるV3Gaの線材の
製造は、バナジウムと銅−ガリウム合金とを密着
させ、線状、テープ状または管状に加工した後、
熱処理により銅−ガリウム合金中のガリウムを選
択的にバナジウムと反応させてV3Ga化合物層を
境界面に生成させる方法、または銅−ガリウム合
金マトリツクス中に多数のバナジウム棒を埋め込
んだ複合体を線状等に加工した後、熱処理して
V3Ga化合物層を境界面に生成させる方法が行わ
れていた。またNb3Sn化合物の場合も同様な方法
が行われていた。 しかし、その複合加工法では、最初に複合体を
作る複雑な作業を必要とし、また銅−ガリウム合
金は加工中、著しく加工硬化するため、約40〜50
%の断面減少率毎に中間焼鈍を必要とし、実用的
な長尺線材を作るには焼鈍回数が極めて多くな
る。従つて製造コストが著しく高くあると共に製
造も複雑である欠点がある。 一方、最近、前記欠点を克服した所謂イン・サ
イチユー法が開発された。この方法は銅・バナジ
ウム二元合金をアーク溶解等により溶融し、銅マ
トリツクス内にバナジウムのデンドライト粒子が
一様に分散したインゴツトを作る。この合金は加
工性に優れ、中間焼鈍を必要とせずに任意の径の
細線に加工し得られるので安価に加工し得られ
る。このような線材加工により、バナジウム粒子
は大きな変形を受け極めて細長い繊維状となつて
線材中に分散された状態となる。この線材表面に
ガリウムを電気メツキ、溶融メツキなどにより付
着させ、これを熱処理するとガリウムが線材内部
に拡散してバナジウム繊維と反応してV3Gaの極
微細な不連続繊維を多数含んだ線材となる。 このようにして得られた繊維分散型V3Ga線材
は、複合加工法によつて得られる線材に比べて優
れた超電導臨界電流密度を有し、また含有繊維自
体が強化の役目を果して線材の強度円高めると共
に曲げ、引張りによる歪に対しても臨界電流など
の超電導特性の劣化も少ない等の効果を有する。 しかしながら、この方法で得られたものは、
18T以上の磁界では臨界電流密度の減少が急激で
あり、NMR分析装置、ミラー型核融合装置を初
めとする強磁界マグネット用線材として適しない
欠点がある。 発明の目的 本発明は前記従来法の欠点を解消せんとするも
のであり、その目的は強磁界での臨界電流密度が
顕著に改善された繊維分散型V3Ga超電導線材を
製造する方法を提供するにある。 発明の構成 本発明者らは前記目的を達成すべく研究の結
果、前記イン・サイチユー法における、銅・バナ
ジウム二元合金に代え、銅にバナジウムと共に特
定量のボロンあるいはハフニウムを添加したもの
を使用すると、これらの元素の一部が生成する
V3Ga相に固溶して、その臨界温度Tcを高め、こ
れに伴ない臨界磁界Hc2も向上し得られ、従つ
て、強磁界中での臨界電流密度Jcを著しく高め得
られることが分つた。この知見に基いて本発明を
完成した。 本発明の要旨は、銅に10〜70原子%のバナジウ
ムと0.03〜3原子%のボロンまたは0.01〜2原子
%のハフニウムを含有させた合金を、線引き、圧
延あるいは管引きなどにより線、テープあるいは
管状に加工した後、これらにガリウムを付着さ
せ、400〜700℃で熱処理することを特徴とする繊
維分散型V3Ga超電導線材の製造法にある。 本発明の方法において、添加するボロンまたは
ハフニウムの線材の加工性を損わない程度である
ことが必要であり、ボロンは0.03〜3原子%、ハ
フニウムは0.01〜2原子%であることが望まし
い。ボロンが0.03原子%未満、ハフニウムが0.01
原子%未満であると、特性改善の効果が得難く、
ボロンが3原子%、ハフニウムが2原子%を超え
ると線材への加工性が劣るようになるので、それ
ぞれ、前記範囲であることがよい。 また銅基合金中のバナジウムの含量は、10〜70
原子%であることが必要である。10原子%より少
ないと線材内部のバナジウム繊維密度が小さくな
り、繊維間距離が長くなつて超電導性が保持され
なくなる。また70原子%を超えると、ガリウムの
線材内部への均一な拡散が困難となつて超電導性
及び機械的特性を著しく損なうようになる。 これらの合金を線引き、圧延あるいは管引きな
どにより、線、テープあるいは管状に加工する。
この加工材に電気メツキ、溶融メツキ等によりガ
リウムを付着させる。これを400〜700℃で熱処理
してガリウムを拡散させてバナジウム繊維と反応
させてV3Gaを生成させる。この熱処理温度が
400℃未満ではガリウムが十分内部まで拡散しな
く、また700℃を超えるとV3Gaの結晶粒が粗大
化し超電導特性が劣化する。熱処理時間は1〜
500時間が適当である。1時間より短かいと
V3Gaが殆んど生成されず、500時間を超えると、
V3Gaの結晶粒の粗大化が進み、超電導特性が劣
化する。好ましくは50〜300時間である。 発明の効果 本発明の方法によると、バナジウムを含有する
銅基合金へボロンまたはハフニウムを特定量含ま
せることにより、従来のイン・サイチュー法によ
るものよりも強磁界での臨界電流密度Jcを高め得
られ、しかもV3Gaの極細繊維を含むので機械的
特性の優れた超電導線材が得られる優れた効果を
有する。 実施例 1 バナジウムにそれぞれ0.2,0.8,2原子%のボ
ロンを含む合金をアーク溶解で溶製し、これを銅
と複合して消耗電極型アーク溶解の電極棒を作つ
た。比較のためにボロンを含有しない電極棒も同
様にして作つた。これらの電極棒をアーク溶解し
て外径40mmφ、長さ70mmのインゴツトを作つた。
インゴツトの組成を原子%で表わすと、約Cu−
34.9%、V−0.07%B、Cu−34.7%V−0.3%B、
Cu−34.3%V−0.7%B、及びCu−35%Vである。 これらのインゴツトを溝ロール、線引き、平ロ
ールなどによつて中間焼鈍なしに幅4mm、厚さ
100μmのテープに加工した。インゴツトの加工
性はボロンを添加しないインゴツトの場合と同様
に良好であつた。 このテープをGa溶融浴中に連続的に浸漬して
約10μm厚さのガリウム膜を付着させ、500℃で
100時間の拡散熱処理を加えてV3Ga超電導線材
を作つた。この線材の4.2Kで16T、及び20Tの磁
界中における線材全断面積についての臨界電流密
度Jc及び超電導遷移温度Tcを示すと、第一表の
通りであつた。
INDUSTRIAL APPLICATION FIELD The present invention relates to a method for manufacturing a fiber-dispersed V 3 Ga superconducting wire. For more details, see the fiber dispersion type, which is widely used in electrical equipment, energy storage, nuclear fusion reactors, NMR analyzers, particle accelerators for high-energy physics, etc.
This invention relates to a manufacturing method for improving the strong magnetic field characteristics of V 3 Ga superconducting wire. Conventional technology Conventionally, Nb-Ti alloy wires have been mainly used as superconducting wires used as winding materials for electromagnets for generating strong magnetic fields, but the limit of the generated magnetic field is 8.5T (85,000 Gauss). If a stronger magnetic field than this is required, it is necessary to use a compound-based superconductor with a high critical magnetic field. However, compound-based superconductors lacked plasticity, which hindered their practical application, but in recent years, methods using diffusion such as surface diffusion methods and composite processing methods have been invented, and V 3 Ga
(Critical temperature Tc = approx. 15K, critical magnetic field Hc 2 = approx. 22T),
Nb 3 Sn (critical temperature Tc = approx. 18K, critical magnetic field Hc 2 = approx.
21T) compound superconducting wire has come into practical use. Among them, V 3 Ga wire is manufactured using a composite processing method, in which vanadium and copper-gallium alloy are brought into close contact with each other, processed into a wire, tape or tube shape, and then
A method in which gallium in a copper-gallium alloy is selectively reacted with vanadium through heat treatment to generate a V 3 Ga compound layer at the interface, or a composite in which a large number of vanadium rods are embedded in a copper-gallium alloy matrix is wired. After processing into shapes etc., heat treatment is performed.
A method has been used in which a V 3 Ga compound layer is generated at the interface. A similar method was also used for Nb 3 Sn compounds. However, this composite processing method requires complicated operations to first create the composite, and the copper-gallium alloy undergoes significant work hardening during processing.
Intermediate annealing is required for every % area reduction rate, and the number of annealing operations is extremely large in order to produce a practical long wire rod. Therefore, the manufacturing cost is extremely high and the manufacturing process is also complicated. On the other hand, recently, a so-called in situ method has been developed which overcomes the above drawbacks. In this method, a copper-vanadium binary alloy is melted by arc melting or the like to produce an ingot in which vanadium dendrite particles are uniformly dispersed within a copper matrix. This alloy has excellent workability and can be processed into thin wires of any diameter without requiring intermediate annealing, so it can be processed at low cost. By such wire processing, the vanadium particles undergo large deformation and become elongated fibers that are dispersed in the wire. Gallium is attached to the surface of this wire by electroplating, melt plating, etc., and when it is heat-treated, gallium diffuses into the wire and reacts with the vanadium fibers, forming a wire containing many V 3 Ga ultrafine discontinuous fibers. Become. The fiber-dispersed V 3 Ga wire obtained in this way has a superior superconducting critical current density compared to the wire obtained by the composite processing method, and the fibers themselves serve as reinforcements to strengthen the wire. It has the effect of increasing the strength circle and reducing deterioration of superconducting properties such as critical current against strain caused by bending and tension. However, what was obtained with this method was
In a magnetic field of 18T or higher, the critical current density decreases rapidly, making it unsuitable as a wire for strong magnetic field magnets such as NMR analyzers and mirror-type nuclear fusion devices. OBJECTS OF THE INVENTION The present invention aims to eliminate the drawbacks of the conventional methods, and its purpose is to provide a method for manufacturing a fiber-dispersed V 3 Ga superconducting wire in which the critical current density in a strong magnetic field is significantly improved. There is something to do. Structure of the Invention As a result of research to achieve the above-mentioned object, the present inventors used a material in which vanadium and a specific amount of boron or hafnium were added to copper in place of the copper-vanadium binary alloy in the in-situ method. Then, some of these elements are produced
V 3 can be dissolved in the Ga phase to increase its critical temperature Tc, thereby increasing the critical magnetic field Hc 2 and, therefore, significantly increasing the critical current density Jc in a strong magnetic field. Divided. The present invention was completed based on this knowledge. The gist of the present invention is to prepare wires, tapes, or the like by drawing, rolling, or tube-drawing an alloy of copper containing 10 to 70 atomic percent vanadium, 0.03 to 3 atomic percent boron, or 0.01 to 2 atomic percent hafnium. The present invention provides a method for manufacturing a fiber-dispersed V 3 Ga superconducting wire, which is characterized in that, after being processed into a tubular shape, gallium is attached thereto and heat-treated at 400 to 700°C. In the method of the present invention, boron or hafnium must be added to an extent that does not impair the workability of the wire, and it is desirable that boron be added in an amount of 0.03 to 3 atomic % and hafnium be added as 0.01 to 2 atomic %. Boron is less than 0.03 atomic%, hafnium is 0.01
If it is less than atomic %, it is difficult to obtain the effect of improving the characteristics.
If the boron content exceeds 3 atomic % and the hafnium content exceeds 2 atomic %, the processability into wire rods will be poor, so it is preferable that each of them be within the above ranges. In addition, the content of vanadium in copper-based alloys is 10 to 70
It needs to be in atomic percent. If it is less than 10 atomic %, the vanadium fiber density inside the wire becomes small, the distance between the fibers becomes long, and superconductivity is no longer maintained. Moreover, if it exceeds 70 atomic percent, it becomes difficult for gallium to diffuse uniformly into the wire, and superconductivity and mechanical properties are significantly impaired. These alloys are processed into wires, tapes, or tubes by drawing, rolling, or tube drawing.
Gallium is attached to this processed material by electroplating, melt plating, or the like. This is heat-treated at 400 to 700°C to diffuse gallium and react with vanadium fibers to produce V 3 Ga. This heat treatment temperature is
If the temperature is lower than 400°C, gallium will not diffuse sufficiently into the interior, and if the temperature exceeds 700°C, the crystal grains of V 3 Ga will become coarse and the superconducting properties will deteriorate. Heat treatment time is 1~
500 hours is appropriate. Less than 1 hour
When V 3 Ga is hardly produced and exceeds 500 hours,
The crystal grains of V 3 Ga become coarser and the superconducting properties deteriorate. Preferably it is 50 to 300 hours. Effects of the Invention According to the method of the present invention, by including a specific amount of boron or hafnium in a copper-based alloy containing vanadium, the critical current density Jc in a strong magnetic field can be increased compared to the conventional in-situ method. Moreover, since it contains V 3 Ga ultrafine fibers, it has the excellent effect of producing a superconducting wire with excellent mechanical properties. Example 1 An alloy containing vanadium and 0.2, 0.8, and 2 atomic percent boron, respectively, was melted by arc melting and combined with copper to produce a consumable electrode type arc melting electrode rod. For comparison, an electrode rod containing no boron was also made in the same manner. These electrode rods were arc melted to produce ingots with an outer diameter of 40 mmφ and a length of 70 mm.
Expressing the composition of the ingot in atomic percent, it is approximately Cu−
34.9%, V-0.07%B, Cu-34.7%V-0.3%B,
Cu-34.3%V-0.7%B, and Cu-35%V. These ingots are rolled to a width of 4 mm and a thickness of 4 mm without intermediate annealing by using groove rolls, wire drawing, flat rolls, etc.
It was processed into a 100μm tape. The processability of the ingots was as good as in the case of ingots without added boron. This tape was continuously immersed in a Ga melt bath to adhere a gallium film approximately 10 μm thick, and heated at 500℃.
A V 3 Ga superconducting wire was created by applying diffusion heat treatment for 100 hours. Table 1 shows the critical current density Jc and superconducting transition temperature Tc of this wire for the total cross-sectional area of the wire in magnetic fields of 16T and 20T at 4.2K.

【表】 この結果が示すように、ボロンの添加によつて
全磁界領域でJcが改善され、特に強磁界での上昇
率が大きくなることがわかる。超電導マグネツト
の線材として実用する場合にはJcが2×104A/
cm2以上あることが望ましいので、本発明のものは
十分実用し得られることを示している。 実施例 2 実施例1と同様にして、バナジウムにそれぞれ
0.2,0.4,1原子%のハフニウムを含む合金をア
ーク溶解で溶製し、これを銅と複合して消耗電極
型アーク溶解の電極棒を作つた。これらの電解棒
をアーク溶解して外径40mmφ、長さ70mmのインゴ
ツトを作つた。インゴツトの組成を原子%で表わ
すと、それぞれ、約Cu−34.9%V−0.07%Hf、
Cu−34.9%V−0.14%Hf及びCu−34.6%V−0.35
%Hfである。これらのインゴツトを実施例1と
同様にしてテープに加工した。インゴツトの加工
性はハフニウムを添加しないインゴツトの場合と
同様に良好であつた。このテープをGa溶融浴中
に連続的に浸漬して約10μm厚さのガリウム膜を
付着させ、500℃で300時間の拡散熱処理して
V3Ga超電導線材を作つた。 この線材の4.2Kで16T及び20Tの磁界中におけ
る線材全断面積についての臨界電流密度Jc及び超
電導遷移温度Tcを示すと第2表の通りであつた。
[Table] As shown in this result, the addition of boron improves Jc in the entire magnetic field region, and the rate of increase is particularly large in strong magnetic fields. When used as a wire material for superconducting magnets, Jc is 2×10 4 A/
Since it is desirable that the particle size is at least cm 2 , this shows that the present invention can be put to practical use sufficiently. Example 2 In the same manner as in Example 1, vanadium was treated with
An alloy containing 0.2, 0.4, and 1 atomic percent hafnium was produced by arc melting, and this was combined with copper to make a consumable electrode rod for arc melting. These electrolytic rods were arc melted to produce ingots with an outer diameter of 40 mmφ and a length of 70 mm. The composition of the ingot expressed in atomic percent is approximately Cu-34.9%V-0.07%Hf, respectively.
Cu-34.9%V-0.14%Hf and Cu-34.6%V-0.35
%Hf. These ingots were processed into tapes in the same manner as in Example 1. The processability of the ingot was as good as in the case of the ingot without added hafnium. This tape was continuously immersed in a Ga melt bath to adhere a gallium film with a thickness of about 10 μm, and then subjected to diffusion heat treatment at 500°C for 300 hours.
Created V 3 Ga superconducting wire. Table 2 shows the critical current density Jc and superconducting transition temperature Tc of this wire at 4.2K in magnetic fields of 16T and 20T for the total cross-sectional area of the wire.

【表】 この結果が示すように、ハフニウムの添加によ
つて、強磁界でのJcが改善されることがわかる。
[Table] As shown in this result, the addition of hafnium improves Jc in a strong magnetic field.

Claims (1)

【特許請求の範囲】[Claims] 1 銅に10〜70原子%のバナジウムと0.03〜3原
子%のボロンまたは0.01〜2原子%のハフニウム
を含有させた合金を、線引き、圧延あるいは管引
きなどにより線、テープあるいは管状に加工した
後、これらにガリウムを付着させ、400〜700℃で
熱処理することを特徴とする繊維分散型V3Ga超
電導線材の製造法。
1 After processing an alloy of copper containing 10 to 70 atomic percent vanadium and 0.03 to 3 atomic percent boron or 0.01 to 2 atomic percent hafnium into a wire, tape, or tube shape by drawing, rolling, or tube drawing, etc. A method for producing a fiber-dispersed V 3 Ga superconducting wire, which comprises adhering gallium thereto and heat-treating it at 400 to 700°C.
JP59155180A 1984-07-27 1984-07-27 Method of producing fibrous dispersed v3ga superconductive wire material Granted JPS6134811A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59155180A JPS6134811A (en) 1984-07-27 1984-07-27 Method of producing fibrous dispersed v3ga superconductive wire material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59155180A JPS6134811A (en) 1984-07-27 1984-07-27 Method of producing fibrous dispersed v3ga superconductive wire material

Publications (2)

Publication Number Publication Date
JPS6134811A JPS6134811A (en) 1986-02-19
JPH0316725B2 true JPH0316725B2 (en) 1991-03-06

Family

ID=15600235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59155180A Granted JPS6134811A (en) 1984-07-27 1984-07-27 Method of producing fibrous dispersed v3ga superconductive wire material

Country Status (1)

Country Link
JP (1) JPS6134811A (en)

Also Published As

Publication number Publication date
JPS6134811A (en) 1986-02-19

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