JPH03174242A - Pressure controller - Google Patents
Pressure controllerInfo
- Publication number
- JPH03174242A JPH03174242A JP31483789A JP31483789A JPH03174242A JP H03174242 A JPH03174242 A JP H03174242A JP 31483789 A JP31483789 A JP 31483789A JP 31483789 A JP31483789 A JP 31483789A JP H03174242 A JPH03174242 A JP H03174242A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- reaction chamber
- mass flow
- flow rate
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 6
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、真空系を備えた半導体素子製造装置の圧力制
御装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a pressure control device for a semiconductor device manufacturing apparatus equipped with a vacuum system.
従来の技術
近年、真空系を備えた半導体素子製造装置においては反
応室排気口の排気能力を制御して反応室の圧力をコント
ロールすることが重要な技術であり、排気能力を制御す
る方法の一つに、排気系に流量制御されたＮ８ガスを導
入する装置が従来より用いられている。Conventional technology In recent years, in semiconductor device manufacturing equipment equipped with a vacuum system, it has become important to control the pressure in the reaction chamber by controlling the exhaust capacity of the reaction chamber exhaust port, and one of the methods for controlling the exhaust capacity is to control the pressure in the reaction chamber. In particular, devices have been used that introduce N8 gas into the exhaust system at a controlled flow rate.
従来技術の一例を第２図を用いて説明する。第２図にお
いて、■は反応室であり、プロセスガス導入口２とガス
排出口３を有している。４は反応室１の圧力計、５は圧
力制御コントローラ、６は質量流量コントローラであり
、圧力制御コントローラ５は圧力計４で計測した圧力に
より質量流量コントローラ６を制御する。７はエアオペ
レートバルブであり、ガス排出口３と真空ポンプ８との
間を連結する排気配管９に接続され、質量流量コントロ
ーラ６を介してパラストＮ３ガスを排気配管９に導入す
る。An example of the prior art will be explained using FIG. 2. In FIG. 2, ▪ is a reaction chamber, which has a process gas inlet 2 and a gas outlet 3. 4 is a pressure gauge of the reaction chamber 1, 5 is a pressure control controller, and 6 is a mass flow controller. The pressure controller 5 controls the mass flow controller 6 based on the pressure measured by the pressure gauge 4. Reference numeral 7 denotes an air operated valve, which is connected to an exhaust pipe 9 that connects the gas outlet 3 and the vacuum pump 8, and introduces Palast N3 gas into the exhaust pipe 9 via the mass flow controller 6.
反応室１にガス導入口２から導入されたプロセスガスは
ガス排出口３から排気配管９を通して真空ポンプ８によ
り排出される。真空ポンプ８の排気能力および排気配管
９のコンダクタンスは一定であるため１反応室１の到達
圧力は導入されるプロセスガス流量により決定される。The process gas introduced into the reaction chamber 1 from the gas inlet 2 is discharged from the gas outlet 3 through the exhaust pipe 9 by the vacuum pump 8. Since the exhaust capacity of the vacuum pump 8 and the conductance of the exhaust pipe 9 are constant, the ultimate pressure in one reaction chamber 1 is determined by the flow rate of the process gas introduced.
プロセスガス流量を固定した場合、反応室１の圧力を到
達圧力以上に設定するためには、エアオペレートバルブ
７を開き、パラストＮ８ガスを排気配管９に導入し、ガ
ス排出口３の排気能力を低下させることにより実現でき
る０反応室１の圧力制御は、圧力制御コントローラ５で
設定圧力と圧力計４がらの実際の圧力との比較により、
バラストＮ、ガスの排気配管９への導入を制御する質量
流量コントローラ６に対してＮ３流量の増減を決定する
クローズトループ制御で実施されている。When the process gas flow rate is fixed, in order to set the pressure in the reaction chamber 1 above the ultimate pressure, open the air operated valve 7, introduce Palast N8 gas into the exhaust pipe 9, and increase the exhaust capacity of the gas outlet 3. The pressure in the reaction chamber 1 can be controlled by lowering the pressure by comparing the set pressure with the pressure controller 5 and the actual pressure from the pressure gauge 4.
Closed loop control is performed in which the mass flow controller 6, which controls the introduction of ballast N and gas into the exhaust pipe 9, determines the increase or decrease in the flow rate of N3.
発明が解決しようとする課題
しかしながら従来の圧力制御方法では、圧力計とパラス
トＮ３導入口が離れている場合、実圧力に対する質量流
量コントローラの流量制御へのフィードバックが遅れる
ため、圧力制御開始時点で過度のパラストＮ、が排気系
に流れこみ、反応室の圧力が一時的にオーバーシュート
するという問題があった。Problems to be Solved by the Invention However, in the conventional pressure control method, if the pressure gauge and the Parast N3 inlet are far apart, the feedback to the flow rate control of the mass flow controller based on the actual pressure is delayed, resulting in an excessive There was a problem in that the pallast N flowed into the exhaust system, causing a temporary overshoot of the pressure in the reaction chamber.
本発明は、上記のようなパラストＮ２ガスを用いた圧力
制御装置において、その圧力制御特性を改善することの
できる圧力制御方法を提供することを目的とするもので
ある。An object of the present invention is to provide a pressure control method that can improve the pressure control characteristics of a pressure control device using pallast N2 gas as described above.
課題を解決するための手段
上記、バラストガスを用いた圧力制御装置における圧力
制御特性を改善するために、本発明では、たとえばマニ
ュアルまたはオープンループで制御可能な流量コントロ
ールバルブを質量流量コントローラの上流側に直列に配
置した構成を有するものである。Means for Solving the Problems In order to improve the pressure control characteristics of the above-mentioned pressure control device using ballast gas, the present invention provides a flow control valve that can be controlled manually or in an open loop, for example, on the upstream side of the mass flow controller. It has a configuration in which the two are arranged in series.
作用
上記構成により、所望する圧力を実現するために必要な
バラストガス量をあらかじめ調査し、この流量以上のバ
ラストガスが流路を流れないように質量流量コントロー
ラの上流に配置された流量コントロールバルブの開度を
調整することにより、反応室圧力のオーバーシュートを
防ぐことができる。Operation With the above configuration, the amount of ballast gas required to achieve the desired pressure is investigated in advance, and the flow rate control valve placed upstream of the mass flow controller is activated to prevent ballast gas exceeding this flow rate from flowing through the flow path. By adjusting the opening degree, overshoot of the reaction chamber pressure can be prevented.
実施例 以下本発明の一実施例を図面に基づいて説明する。Example An embodiment of the present invention will be described below based on the drawings.
第１図は本発明の一実施例の圧力制御装置の系統図であ
る。第１図において、質量流量コントローラ６の上流側
にオーブンループで制御可能な流量コントロールバルブ
ｌＯが設けられ、さらに遠隔操作により流量コントロー
ルバルブ１０の流量調整が可能な流量設定器１１が設け
られている。これ以外は、第２図の従来の構成と同様で
ある。また、流量コントロールバルブ１０はマニュアル
で流量を設定できるように構成されてもよい。FIG. 1 is a system diagram of a pressure control device according to an embodiment of the present invention. In FIG. 1, a flow rate control valve lO that can be controlled by an oven loop is provided upstream of the mass flow controller 6, and a flow rate setting device 11 that can adjust the flow rate of the flow rate control valve 10 by remote control is also provided. . Other than this, the configuration is the same as the conventional configuration shown in FIG. Further, the flow rate control valve 10 may be configured so that the flow rate can be set manually.
上記の構成により、パラストＮ１ガスを用いた圧力制御
動作を以下に説明する０反応室１にガス導入口２より毎
分一定量のプロセスガスを流し、反応室１の圧力をたと
えば３００ ｍ Ｔｏｒｒに保つために、質量流量コン
トローラ６が制御したバラストＮ１ガス量は毎分２００
０ωであるとする。この場合、流量コントロールバルブ
１０の流量設定を毎分２５００ω以内となるように流量
設定器１１により設定する。With the above configuration, a constant amount of process gas is flowed every minute from the gas inlet 2 into the reaction chamber 1, and the pressure in the reaction chamber 1 is set to, for example, 300 m Torr. In order to maintain the ballast N1 gas flow rate controlled by the mass flow controller 6, the flow rate is 200% per minute.
Suppose that it is 0ω. In this case, the flow rate setting of the flow rate control valve 10 is set by the flow rate setting device 11 so that the flow rate is within 2500 ω/min.
したがって、質量流量コントローラ６の制御可能な流量
が５０００ｏｃであっても、この流路を流れるＮ、ガス
量は２５００ｃｅ以内に制限されているため。Therefore, even if the controllable flow rate of the mass flow controller 6 is 5000 oc, the amount of nitrogen and gas flowing through this flow path is limited to within 2500 oc.
圧力制御開始時点で過度のバラストＮ、ガスが排気系に
流れこむことはなく１反応室１の圧力が急激にオーバー
シュートすることはない。Excessive ballast N and gas do not flow into the exhaust system at the start of pressure control, and the pressure in one reaction chamber 1 does not suddenly overshoot.
発明の効果
以上のように、本発明によれば、所望の圧力を実現する
ために必要なバラストガス量以上の流量が質量流量コン
トローラを通して流れないように流量コントロールバル
ブの関度を調整することにより、圧力制御開始時点での
反応室圧力の急激な上昇を防止することができ、反応室
内の化学反応の急激な進行を防止することができる優れ
た圧力制御装置を実現できるものである。Effects of the Invention As described above, according to the present invention, by adjusting the relationship of the flow control valve so that a flow rate greater than the amount of ballast gas required to achieve a desired pressure does not flow through the mass flow controller. Therefore, it is possible to realize an excellent pressure control device that can prevent a rapid increase in the pressure in the reaction chamber at the time of starting pressure control, and can prevent rapid progress of chemical reactions in the reaction chamber.
第１図は本発明の一実施例の圧力制御装置の概略系統図
、第２図は従来の圧力制御装置の概略系統図である。
１・・・反応室、２・・・プロセスガス導入口、３・・
・ガス排出口、４・・・圧力計、５・・・圧力制御コン
トローラ、６・・・質量流量コントローラ、７・・・エ
アオペレートバルブ、８・・・真空ポンプ、９・・・排
気配管、１゜・・・流量コントロールバルブ、１１・・
・流量設定器。FIG. 1 is a schematic system diagram of a pressure control device according to an embodiment of the present invention, and FIG. 2 is a schematic system diagram of a conventional pressure control device. 1... Reaction chamber, 2... Process gas inlet, 3...
・Gas outlet, 4... Pressure gauge, 5... Pressure control controller, 6... Mass flow controller, 7... Air operated valve, 8... Vacuum pump, 9... Exhaust piping, 1゜・・・Flow rate control valve, 11...
・Flow rate setting device.
Claims (1)
て、反応室の排気配管に導入し、反応室の圧力制御を行
う真空系の圧力制御装置であって、流量コントロールバ
ルブをバラストガス流路に対して質量流量コントローラ
の上流に配置した圧力制御装置。1. A vacuum system pressure control device that controls the pressure of the reaction chamber by controlling the ballast gas with a mass flow controller and introducing it into the exhaust piping of the reaction chamber, in which the flow rate control valve is connected to the ballast gas flow path. A pressure control device located upstream of the mass flow controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31483789A JPH0787893B2 (en) | 1989-12-04 | 1989-12-04 | Pressure control device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31483789A JPH0787893B2 (en) | 1989-12-04 | 1989-12-04 | Pressure control device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03174242A true JPH03174242A (en) | 1991-07-29 |
| JPH0787893B2 JPH0787893B2 (en) | 1995-09-27 |
Family
ID=18058198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31483789A Expired - Fee Related JPH0787893B2 (en) | 1989-12-04 | 1989-12-04 | Pressure control device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0787893B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08339968A (en) * | 1996-05-21 | 1996-12-24 | Kokusai Electric Co Ltd | Wafer processing method and diffusion furnace |
| JP2011034445A (en) * | 2009-08-04 | 2011-02-17 | Ckd Corp | Exhaust pressure control system and exhaust pressure control method |
-
1989
- 1989-12-04 JP JP31483789A patent/JPH0787893B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08339968A (en) * | 1996-05-21 | 1996-12-24 | Kokusai Electric Co Ltd | Wafer processing method and diffusion furnace |
| JP2011034445A (en) * | 2009-08-04 | 2011-02-17 | Ckd Corp | Exhaust pressure control system and exhaust pressure control method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0787893B2 (en) | 1995-09-27 |
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