JPH0317929A - 電子管用の含浸熱陰極 - Google Patents

電子管用の含浸熱陰極

Info

Publication number: JPH0317929A
Authority: JP; Japan
Prior art keywords: layer; slits; cathode; hot cathode; microns
Prior art date: 1989-05-30
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP2141214A

Other languages

English (en)

Japanese (ja)

Inventor

Arvind Shroff

アルヴァン　シュロフ

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Thales Electron Devices SA

Original Assignee

Thomson Tubes Electroniques

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-05-30

Filing date

1990-05-30

Publication date

1991-01-25

1990-05-30 Application filed by Thomson Tubes Electroniques filed Critical Thomson Tubes Electroniques

1991-01-25 Publication of JPH0317929A publication Critical patent/JPH0317929A/ja

Status Pending legal-status Critical Current

Links

239000011148 porous material Substances 0.000 claims abstract description 21
239000000463 material Substances 0.000 claims abstract description 12
238000005229 chemical vapour deposition Methods 0.000 claims description 8
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
238000010438 heat treatment Methods 0.000 claims description 7
229910052750 molybdenum Inorganic materials 0.000 claims description 7
239000011733 molybdenum Substances 0.000 claims description 7
229910052721 tungsten Inorganic materials 0.000 abstract description 14
239000010937 tungsten Substances 0.000 abstract description 14
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 13
229910052788 barium Inorganic materials 0.000 abstract description 11
DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract description 10
238000005530 etching Methods 0.000 abstract description 2
239000011248 coating agent Substances 0.000 abstract 1
238000000576 coating method Methods 0.000 abstract 1
229910052782 aluminium Inorganic materials 0.000 description 7
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
238000000034 method Methods 0.000 description 6
239000000203 mixture Substances 0.000 description 6
QKYBEKAEVQPNIN-UHFFFAOYSA-N barium(2+);oxido(oxo)alumane Chemical compound [Ba+2].[O-][Al]=O.[O-][Al]=O QKYBEKAEVQPNIN-UHFFFAOYSA-N 0.000 description 5
XFWJKVMFIVXPKK-UHFFFAOYSA-N calcium;oxido(oxo)alumane Chemical compound [Ca+2].[O-][Al]=O.[O-][Al]=O XFWJKVMFIVXPKK-UHFFFAOYSA-N 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 5
239000011347 resin Substances 0.000 description 5
229920005989 resin Polymers 0.000 description 5
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
238000004519 manufacturing process Methods 0.000 description 4
239000001301 oxygen Substances 0.000 description 4
229910052760 oxygen Inorganic materials 0.000 description 4
229910052717 sulfur Inorganic materials 0.000 description 4
239000011593 sulfur Substances 0.000 description 4
238000003754 machining Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
238000001259 photo etching Methods 0.000 description 3
238000000992 sputter etching Methods 0.000 description 3
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
229910052786 argon Inorganic materials 0.000 description 2
230000008901 benefit Effects 0.000 description 2
229910052802 copper Inorganic materials 0.000 description 2
239000010949 copper Substances 0.000 description 2
239000007789 gas Substances 0.000 description 2
230000003993 interaction Effects 0.000 description 2
239000011159 matrix material Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
229910000691 Re alloy Inorganic materials 0.000 description 1
VVTRNRPINJRHBQ-UHFFFAOYSA-N [Cl].[Ar] Chemical compound [Cl].[Ar] VVTRNRPINJRHBQ-UHFFFAOYSA-N 0.000 description 1
IGUHATROZYFXKR-UHFFFAOYSA-N [W].[Ir] Chemical compound [W].[Ir] IGUHATROZYFXKR-UHFFFAOYSA-N 0.000 description 1
150000004645 aluminates Chemical class 0.000 description 1
150000001552 barium Chemical class 0.000 description 1
QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 1
230000008859 change Effects 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
229910052804 chromium Inorganic materials 0.000 description 1
239000011651 chromium Substances 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000008020 evaporation Effects 0.000 description 1
238000001704 evaporation Methods 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
229910052741 iridium Inorganic materials 0.000 description 1
GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
239000000314 lubricant Substances 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
230000008018 melting Effects 0.000 description 1
238000002844 melting Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
230000005012 migration Effects 0.000 description 1
238000013508 migration Methods 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910052762 osmium Inorganic materials 0.000 description 1
SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
YXIFBDPASYPBNG-UHFFFAOYSA-N osmium tungsten Chemical compound [W].[Os] YXIFBDPASYPBNG-UHFFFAOYSA-N 0.000 description 1
238000005036 potential barrier Methods 0.000 description 1
229910000753 refractory alloy Inorganic materials 0.000 description 1
239000011819 refractory material Substances 0.000 description 1
229910052702 rhenium Inorganic materials 0.000 description 1
WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical compound [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 description 1
239000000126 substance Substances 0.000 description 1
-1 sulfur hexafluorophosphate Chemical compound 0.000 description 1
150000003657 tungsten Chemical class 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/13—Solid thermionic cathodes
- H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
- H01J1/28—Dispenser-type cathodes, e.g. L-cathode

Landscapes

Solid Thermionic Cathode (AREA)

JP2141214A 1989-05-30 1990-05-30 電子管用の含浸熱陰極 Pending JPH0317929A (ja)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
FR8907084A FR2647952A1 (fr)	1989-05-30	1989-05-30	Cathode thermoelectronique impregnee pour tube electronique
FR8907084		1989-05-30

Publications (1)

Publication Number	Publication Date
JPH0317929A true JPH0317929A (ja)	1991-01-25

Family

ID=9382156

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2141214A Pending JPH0317929A (ja)	1989-05-30	1990-05-30	電子管用の含浸熱陰極

Country Status (3)

Country	Link
EP (1)	EP0401068A1 (de)
JP (1)	JPH0317929A (de)
FR (1)	FR2647952A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5041757A (en) *	1990-12-21	1991-08-20	Hughes Aircraft Company	Sputtered scandate coatings for dispenser cathodes and methods for making same
DE4142535A1 (de) *	1991-12-21	1993-06-24	Philips Patentverwaltung	Scandat-kathode und verfahren zur ihrer herstellung
CN103311066B (zh) *	2013-06-03	2015-08-19	哈尔滨工业大学	具有内芯的用于航天器自持空心阴极的发射体

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
BE550302A (de) *	1955-08-15
FR2494035A1 (fr) *	1980-11-07	1982-05-14	Thomson Csf	Cathode thermo-electronique pour tube hyperfrequences et tube incorporant une telle cathode
US4379979A (en) *	1981-02-06	1983-04-12	The United States Of America As Represented By The Secretary Of The Navy	Controlled porosity sheet for thermionic dispenser cathode and method of manufacture

1989
- 1989-05-30 FR FR8907084A patent/FR2647952A1/fr not_active Withdrawn
1990
- 1990-05-07 EP EP90401216A patent/EP0401068A1/de not_active Withdrawn
- 1990-05-30 JP JP2141214A patent/JPH0317929A/ja active Pending

Also Published As

Publication number	Publication date
EP0401068A1 (de)	1990-12-05
FR2647952A1 (fr)	1990-12-07

Publication	Publication Date	Title
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US6204596B1 (en)	2001-03-20	Filamentary electron-emission device having self-aligned gate or/and lower conductive/resistive region
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US5562516A (en)	1996-10-08	Field-emitter fabrication using charged-particle tracks
US3890521A (en)	1975-06-17	X-ray tube target and X-ray tubes utilising such a target
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DE19527723A1 (de)	1997-02-06	Elektrische Entladungsröhre oder Entladungslampe und Scandat-Vorratskathode
US5635790A (en)	1997-06-03	Process for the production of a microtip electron source and microtip electron source obtained by this process
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EP0004424A1 (de)	1979-10-03	Thermionische Kathode
US5624872A (en)	1997-04-29	Method of making low capacitance field emission device
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US7025892B1 (en)	2006-04-11	Method for creating gated filament structures for field emission displays
EP0121564B1 (de)	1987-11-25	Verfahren zum herstellen eines vorratsbehaelters einer vorratskathode
US4459323A (en)	1984-07-10	Process for producing an impregnated cathode with an integrated grid, cathode obtained by this process and electron tube equipped with such a cathode