JPH03183782A - Thin film manufacturing equipment - Google Patents

Thin film manufacturing equipment

Info

Publication number
JPH03183782A
JPH03183782A JP1324704A JP32470489A JPH03183782A JP H03183782 A JPH03183782 A JP H03183782A JP 1324704 A JP1324704 A JP 1324704A JP 32470489 A JP32470489 A JP 32470489A JP H03183782 A JPH03183782 A JP H03183782A
Authority
JP
Japan
Prior art keywords
thin film
drums
original fabric
roll
manufacturing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1324704A
Other languages
Japanese (ja)
Other versions
JP2587507B2 (en
Inventor
Toshiaki Kunieda
国枝 敏明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP1324704A priority Critical patent/JP2587507B2/en
Publication of JPH03183782A publication Critical patent/JPH03183782A/en
Application granted granted Critical
Publication of JP2587507B2 publication Critical patent/JP2587507B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Chemical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は、長尺の高分子フィルムや金属化フィルムを搬
送させ、その上に機能性薄膜を形成して機能性フィルム
を製造する薄膜製造装置に関するものである。さらに詳
しくは、金属薄膜型磁気記録媒体の保護層やバックコー
ト層の形成に好適な製造装置に関するものである。
Detailed Description of the Invention [Industrial Application Field] The present invention relates to thin film production in which a long polymer film or metallized film is conveyed and a functional thin film is formed thereon to produce a functional film. It is related to the device. More specifically, the present invention relates to a manufacturing apparatus suitable for forming a protective layer and a back coat layer of a metal thin film type magnetic recording medium.

[従来の技術] 近年、磁気記録装置の高記録密度化に伴ない、高分子フ
ィルムの上に真空蒸着法、スパッタリング法、イオンブ
レーティング法等の方法により磁性金属薄膜層を形成す
る金属薄膜型磁気記録媒体の研究開発が進められている
。一般にこの種の媒体は耐食性・耐摩耗性に課題があり
、その解決策として保護膜を設けることが有効であると
言われている。保護膜の形成方法としては、真空蒸着法
、スパッタリング法、イオンブレーティング法、プラズ
マCVD法などが検討され、様々な製造装置が提案され
ている。
[Prior Art] In recent years, as the recording density of magnetic recording devices has increased, metal thin film types have been developed, in which a magnetic metal thin film layer is formed on a polymer film by a method such as a vacuum evaporation method, a sputtering method, or an ion blasting method. Research and development of magnetic recording media is progressing. Generally, this type of media has problems with corrosion resistance and abrasion resistance, and it is said that providing a protective film is an effective solution to this problem. As methods for forming the protective film, vacuum evaporation, sputtering, ion blating, plasma CVD, and the like have been studied, and various manufacturing apparatuses have been proposed.

保護膜製造装置に要求される条件としては、下記の要求
特性等を挙げることができる。
The conditions required for the protective film manufacturing apparatus include the following required characteristics.

(i)100〜300人と薄くて緻密な膜ができること
(i) A thin and dense film can be produced with 100 to 300 people.

(i)膜質の再現性や面的安定性(例えば均一性など)
に優れていること。
(i) Reproducibility and surface stability of film quality (e.g. uniformity)
Be excellent at.

(ii)広幅、長尺の原反に高速で熱負けなどせずに製
造できること。
(ii) It is possible to manufacture wide and long sheets at high speed without losing heat.

従来技術の代表例として、第3図にプラズマCVD法に
よる薄膜製造装置の構成図を示す。この図において1は
真空ポンプ、2は真空槽、3は原反、4A、4Bは放電
のための対向電極、5はモノマーガス供給口、6は供給
ロール、7は巻き取りロール、8はガイドローラー、9
は交流電源である。
As a representative example of the prior art, FIG. 3 shows a configuration diagram of a thin film manufacturing apparatus using the plasma CVD method. In this figure, 1 is a vacuum pump, 2 is a vacuum chamber, 3 is a raw material, 4A and 4B are counter electrodes for discharging, 5 is a monomer gas supply port, 6 is a supply roll, 7 is a take-up roll, and 8 is a guide roller, 9
is an AC power source.

以上のような製造装置において、供給ロール6から引出
された長尺状の原反3上には、対向電極4A、4Bの空
間で発生したプラズマにより連続的に機能性薄膜が形成
される。
In the manufacturing apparatus as described above, a functional thin film is continuously formed on the elongated original fabric 3 pulled out from the supply roll 6 by plasma generated in the space between the counter electrodes 4A and 4B.

[発明が解決しようとする課題] しかしながら、前記した従来の装置では、例えば真空蒸
着装置やイオンブレーティング装置では前述の(i)の
課題が、スパッタリングの装置では前述の(ii)の課
題が、プラズマCVD装置では前述の(i)の課題がそ
れぞれ未解決で残っており、上記3条件を満足する量産
に適した薄膜製造装置が望まれている。
[Problems to be Solved by the Invention] However, in the conventional apparatuses described above, for example, a vacuum evaporation apparatus or an ion blating apparatus has the above-mentioned problem (i), and a sputtering apparatus has the above-mentioned problem (ii). In the plasma CVD apparatus, each of the above-mentioned problems (i) remains unresolved, and a thin film manufacturing apparatus suitable for mass production that satisfies the above three conditions is desired.

そして、前記した従来の装置によるプラズマCVD法の
課題である膜質の再現性欠如や面的不安定性の原因を解
析したところ、保護膜材料が金属薄膜型磁気記録媒体(
原反3)の表面ばかりでなく、対向電極4Aの表面にも
付着することがわかり、このことが放電条件の経時的な
変化や電極の場所による不均一性を発生せしめ、結果的
には膜質の不安定性につながっているという課題があっ
た。
When we analyzed the causes of the lack of reproducibility of film quality and surface instability, which are problems of the plasma CVD method using the above-mentioned conventional equipment, we found that the protective film material is not suitable for metal thin film magnetic recording media.
It was found that it adhered not only to the surface of the original fabric 3) but also to the surface of the counter electrode 4A, which caused changes in discharge conditions over time and non-uniformity depending on the location of the electrode, resulting in poor film quality. The problem was that it led to instability.

本発明は以上述べたような従来の課題を解決するために
なされたもので、耐食性能・耐摩耗性能を低下させるこ
となく高速で安定した保護膜を形成する薄膜製造装置を
提供することを目的とするものである。
The present invention was made in order to solve the conventional problems as described above, and an object of the present invention is to provide a thin film manufacturing device that can form a stable protective film at high speed without reducing corrosion resistance and wear resistance. That is.

[課題を解決するための手段] 上記目的を遠戚するため本発明は、真空層内に原反の走
行系を有し、前記原反上にプラズマCVD法により連続
的に機能性薄膜を形成する製造装置において、複数個の
電気的に絶縁された金属ドラムを設け、かつ該ドラム間
に交流電源を接続し、さらに該ドラム間の空間であって
前記原反に接する位置に、モノマーガスの供給手段を有
する放電室を設けたことを特徴とする薄膜製造装置であ
る。
[Means for Solving the Problems] In order to achieve the above-mentioned object, the present invention has a running system for a raw fabric in a vacuum layer, and continuously forms a functional thin film on the raw fabric by a plasma CVD method. In the manufacturing apparatus, a plurality of electrically insulated metal drums are provided, an AC power source is connected between the drums, and a monomer gas is supplied to the space between the drums at a position in contact with the original fabric. This is a thin film manufacturing apparatus characterized by being provided with a discharge chamber having a supply means.

本発明においては、各ドラム毎に原反の供給ロールと巻
き取りロールを独立に設け、複数個の原反走行系を有す
るようにすることもできる。
In the present invention, it is also possible to provide a supply roll and a take-up roll for the original fabric independently for each drum, thereby providing a plurality of original fabric traveling systems.

[作用] 前記した本発明の構成によれば、複数個の電気的に絶縁
された金属ドラムを設け、かつ該ドラム間に交流電源を
接続し、さらに該ドラム間の空間であって原反に接する
位置に、モノマーガスの供給手段を有する放電室を設け
たので、ドラム自身がそれぞれ対向電極の役割を果たし
つつ、かつその上を原反が接触しながら走行することに
より、保護膜材料の付着は次から次へと新しく引き出さ
れる原反になされるために、従来の固定対向電極で起っ
ていた付着による放電条件の変化は発生せず、安定した
膜質の保護膜ができることとなる。
[Function] According to the configuration of the present invention described above, a plurality of electrically insulated metal drums are provided, an AC power source is connected between the drums, and a space between the drums is connected to the original fabric. Since a discharge chamber with a monomer gas supply means is provided at the contact position, the drums themselves act as counter electrodes, and the raw fabric runs on top of the drums in contact with each other, thereby preventing the attachment of the protective film material. Since this is applied to the original fabric that is drawn out one after another, changes in discharge conditions due to adhesion that occur with conventional fixed counter electrodes do not occur, and a protective film with stable film quality can be formed.

[実施例] 以下本発明の一実施例について、図面を参照しながら説
明する。
[Example] An example of the present invention will be described below with reference to the drawings.

第1図は本発明の第1の実施例における薄膜製造装置の
基本構成を示す構成図であり、この場合はドラム数が2
ケの例である。第1図において、1は真空ポンプ、2は
真空槽、3は原反、5はモノマーガス供給管、6は供給
ロール、7は巻き取りロール、8はガイドローラー、9
は交流電源、10Aは金属ドラム、10Bは金属ドラム
、11は放電室である。
FIG. 1 is a block diagram showing the basic structure of a thin film manufacturing apparatus in a first embodiment of the present invention, in which the number of drums is 2.
This is an example. In FIG. 1, 1 is a vacuum pump, 2 is a vacuum tank, 3 is a raw material, 5 is a monomer gas supply pipe, 6 is a supply roll, 7 is a take-up roll, 8 is a guide roller, 9
10A is a metal drum, 10B is a metal drum, and 11 is a discharge chamber.

このように構成された第1図の薄膜製造装置において、
真空槽2内には複数個の電気的に絶縁された金属ドラム
IOA、IOBが設けられ、かつ該ドラムIOA、IO
B間には交流電源9が接続され、さらに該ドラムIOA
、IOB間の空間であって原反3に接する位置には、モ
ノマーガスの供給手段5を有する放電室11が設けられ
ている。
In the thin film manufacturing apparatus of FIG. 1 configured in this way,
A plurality of electrically insulated metal drums IOA, IOB are provided in the vacuum chamber 2, and the drums IOA, IO
An AC power supply 9 is connected between B and the drum IOA.
, a discharge chamber 11 having a monomer gas supply means 5 is provided in a space between the IOBs and at a position in contact with the original fabric 3.

すなわち、真空ポンプ1が接続された真空槽2内には、
互いに対向する位置に冷却され、かつ電気的に周囲と絶
縁された金属ドラムIOA、IOBを設けて交流電源9
を接続し、同時に、ドラム10AとドラムIOBの間に
放電室11を設け、その放電室11にモノマーガスを供
給する単独もしくは複数のモノマーガス供給管5を接続
し、さらには磁気記録層が形成された広幅長尺な原反3
を捲回している供給ロール6と、それを巻き取る巻き取
りロール7、及び走行を規制するガイドローラー8等の
原反搬送系を設けることにより連続的に薄膜が形成でき
る構成となっている。
That is, in the vacuum chamber 2 to which the vacuum pump 1 is connected,
AC power source 9 is provided by providing cooled metal drums IOA and IOB at positions facing each other and electrically insulated from the surroundings.
At the same time, a discharge chamber 11 is provided between the drum 10A and the drum IOB, and one or more monomer gas supply pipes 5 for supplying monomer gas are connected to the discharge chamber 11, and furthermore, a magnetic recording layer is formed. Wide and long raw material 3
A thin film can be continuously formed by providing a feed roll 6 for winding the roll, a take-up roll 7 for winding the roll, and a guide roller 8 for regulating the running of the roll.

真空ポンプ1により真空槽2内を約10’t。The inside of the vacuum chamber 2 is pumped approximately 10't by the vacuum pump 1.

rrまで排気し、次にモノマーガス、例えばメタン、エ
タン、シクロヘキサン、ベンゼンなど化学蒸着できる物
質を単独であるいはアルゴンや水素との混合の形で放電
室11にモノマーガス供給管5を通して放電室内の真空
度が約10−2〜100torrとなるよう導入し、次
に、両ドラム間に交流電圧を印加して放電室11内にプ
ラズマを発生させる。この時、交流の周波数としては数
KH2以上が望ましく、電圧は300v以上が有効であ
る。電流は放電面積に依存するため一概に言えないが、
保護膜の厚さや原反走行速度等を考慮して決める。放電
室11は耐熱性のある絶縁物から構成され、ドラムIO
A、IOBと放電室11との間のギャップはできるだけ
狭く設計し、放電が放電室11内だけで起こるようにし
なければならない。
rr, and then monomer gas, such as methane, ethane, cyclohexane, benzene, etc., which can be chemically vapor deposited, alone or in the form of a mixture with argon or hydrogen, is passed through the monomer gas supply tube 5 into the discharge chamber 11 to reduce the vacuum in the discharge chamber. Then, an alternating current voltage is applied between both drums to generate plasma in the discharge chamber 11. At this time, the frequency of the alternating current is preferably several KH2 or more, and the effective voltage is 300V or more. Since the current depends on the discharge area, it cannot be said unconditionally, but
Decide by taking into account the thickness of the protective film and the speed of running the material. The discharge chamber 11 is made of a heat-resistant insulator, and the drum I/O
A. The gap between the IOB and the discharge chamber 11 must be designed to be as narrow as possible so that discharge occurs only within the discharge chamber 11.

原反3としては、磁気記録層が形成されたものはもちろ
ん、一般の高分子フィルムでも使用可能でありそれぞれ
の目的に応じて選択すべきである。
As the raw film 3, not only one on which a magnetic recording layer is formed, but also a general polymer film can be used, and the material should be selected depending on the purpose.

例えば、金属薄膜型の磁気記録媒体の場合は、磁気記録
層側への保護膜を目的とした薄膜形成もできるし、裏面
側への走行改善を目的とした薄膜形成もできる。但し金
属薄膜が付着している原反の場合は、その抵抗が低いと
金属薄膜を介して電流が流れるために、ドラムIOAか
ら次のドラム10Bへの走行スパンを長くして抵抗を上
げる等の調整が必要となる。抵抗が極端に低い場合は、
例えば2〜3にΩ以下では第2図のような実施例が有効
である。ここでは、供給ロール6A、6Bと巻き取りロ
ール7A、7Bがドラム毎に分けられており、金属薄膜
の有無、抵抗の高低に関係なく、安定な放電状態が得ら
れる。
For example, in the case of a metal thin film type magnetic recording medium, a thin film can be formed on the magnetic recording layer side for the purpose of a protective film, or a thin film can be formed for the purpose of improving running on the back side. However, in the case of raw material with a metal thin film attached, if the resistance is low, current will flow through the metal thin film, so it is necessary to increase the resistance by increasing the running span from the drum IOA to the next drum 10B. Adjustments will be required. If the resistance is extremely low,
For example, the embodiment shown in FIG. 2 is effective below 2 to 3 Ω. Here, supply rolls 6A, 6B and take-up rolls 7A, 7B are separated for each drum, and a stable discharge state can be obtained regardless of the presence or absence of a metal thin film and the level of resistance.

次に具体的な実施例とその評価結果について説明する。Next, specific examples and their evaluation results will be described.

原反の基材として、10μm厚のポリエチレンテレフタ
レートフィルムを用い、この上にコバルトニッケル(N
i:20wt%)磁性膜(膜厚0.2μm)を斜め蒸着
した幅500mm、長さ3000mの金属薄膜型磁気記
録媒体原反に、30m/minの搬送速度で150人の
カーボン薄膜を本実施例の製造装置により50ット試作
した。モノマーガスとしてはメタンとアルゴンをそれぞ
れ300m1/分、100m1/分導入し、放電室内真
空度は0.35torr、真空容器内4 の真空度は2X10  torrとし、周波数は50K
H! 、電圧は1200Vの交流電圧を印加し800m
Aの放電電流を流してプラズマを発生させた。ドラムは
熱負けを防ぐために15℃に冷却した。
A 10 μm thick polyethylene terephthalate film was used as the base material for the original fabric, and cobalt nickel (N
A carbon thin film was deposited by 150 people at a transport speed of 30 m/min on a metal thin film magnetic recording medium material with a width of 500 mm and a length of 3000 m, on which a magnetic film (film thickness: 0.2 μm) was obliquely deposited. A trial production of 50 lots was made using the production equipment in the example. Methane and argon were introduced as monomer gases at 300 m1/min and 100 m1/min, respectively, the degree of vacuum in the discharge chamber was 0.35 torr, the degree of vacuum in the vacuum vessel was 2 x 10 torr, and the frequency was 50K.
H! , voltage is 800m by applying 1200V AC voltage.
A discharge current of A was applied to generate plasma. The drum was cooled to 15°C to prevent heat loss.

このような条件で作製した試料を172インチ幅に切断
し、幅方向で5点、長手方向で7点、それぞれのロフト
についてサンプリングをした。
The sample prepared under these conditions was cut to a width of 172 inches, and samples were taken at 5 points in the width direction and 7 points in the longitudinal direction at each loft.

耐久性の面内な安定性、ロット間の再現性を調べるため
に、それぞれの試料について23℃70%の環境下にお
いてビデオデツキによりスチル寿命を測定した。さらに
耐食性を調べるために、これらの試料を60℃90%の
高温高湿槽の中に1週間放置し、その後同様のスチル寿
命の測定を行った。
In order to examine in-plane stability of durability and reproducibility between lots, the still life of each sample was measured using a video deck in an environment of 23° C. and 70%. In order to further examine the corrosion resistance, these samples were left in a high temperature, high humidity tank at 60°C and 90% for one week, and then the still life was measured in the same manner.

両者の試験においていずれの試料も30分以上のスチル
寿命が得られ、従来では30分以下のスチル寿命不良が
30%近くの比率で発生していたことからこのことを考
えると本実施例の装置によると飛躍的な改善効果が得ら
れる。
In both tests, still lifespans of 30 minutes or more were obtained for all samples, and considering this, considering that in the past, still lifespan failures of 30 minutes or less occurred at a rate of nearly 30%, the device of this example According to the results, a dramatic improvement effect can be obtained.

また、本実施例の装置では、保護層が必然的に2層以上
の構造となるが、しかし性能的には何ら問題ないことが
確認できた。
Further, in the device of this example, the protective layer inevitably has a structure of two or more layers, but it was confirmed that there was no problem in terms of performance.

なお、本実施例では2個のドラムについて述べているが
、これに限定されるものではなく、複数個のドラムにお
いても有効であり、装置は若干複雑となるが、原反の搬
送速度が向上するといったメリットがでてくる。
Although this example describes two drums, it is not limited to this, and is also effective with multiple drums. Although the device becomes slightly more complex, the conveyance speed of the original fabric is improved. There are benefits to doing so.

次に本発明の第2の実施例について説明する。Next, a second embodiment of the present invention will be described.

第2図において、6Aは供給ロール、6Bは供給ロール
、7Aは巻き取りロール、7Bは巻き取りロールであり
、その他は第1図と同じ部品または装置を示す。
In FIG. 2, 6A is a supply roll, 6B is a supply roll, 7A is a take-up roll, and 7B is a take-up roll, and the other parts or devices are the same as in FIG. 1.

このように構成された薄膜製造装置において、各ドラム
毎に原反の供給ロール6A、6Bと、巻き取りロール7
A、7Bを独立に設け、複数個の原反走行系を有するよ
うにしたものである。このようにすることに撚、同時に
2系列の原反の処理ができ、装置効率が向上するという
効果を達成できる。
In the thin film manufacturing apparatus configured in this way, each drum has supply rolls 6A and 6B for the original fabric, and a take-up roll 7.
A and 7B are provided independently, and a plurality of web traveling systems are provided. By doing so, it is possible to twist two lines of raw fabric at the same time, and it is possible to achieve the effect of improving the efficiency of the apparatus.

[発明の効果] 以上説明したとおり本発明によれば、複数個の電気的に
絶縁された金属ドラムを設け、かつ該ドラム間に交流電
源を接続し、さらに該ドラム間の空間であって原反に接
する位置に、モノマーガスの供給手段を有する放電室を
設けたので、ドラム自身がそれぞれ対向電極の役割を果
たしつつ、かつその上を原反が接触しながら走行するこ
とにより、保護膜材料の付着は次から次へと新しく引き
出される原反になされるために、固定対向電極で起って
いた付着による放電条件の変化は発生せず、安定した膜
質の保護膜ができることとなる。その結果、薄くて緻密
な膜が高速で均一に形成できることから保護膜の製造装
置として極めて量産性に優れたものとなり、金属薄膜型
磁気記録媒体の実用化に多大の貢献をするものである。
[Effects of the Invention] As explained above, according to the present invention, a plurality of electrically insulated metal drums are provided, an AC power source is connected between the drums, and the space between the drums is Since a discharge chamber with a monomer gas supply means is provided at a position in contact with the film, the drums themselves act as counter electrodes, and the raw film runs on top of the drums in contact with each other, allowing the protective film material to Since the adhesion is made to the newly drawn raw material one after another, the change in discharge conditions due to adhesion that occurs at the fixed counter electrode does not occur, and a protective film with stable film quality is formed. As a result, a thin, dense film can be uniformly formed at high speed, making the device extremely suitable for mass production as a protective film manufacturing device, and making a significant contribution to the practical application of metal thin film magnetic recording media.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の第1の実施例における薄膜製造装置の
構成図、第2図は本発明の第2の実施例における薄膜製
造装置の構成図、第3図は従来の薄膜製造装置の構成図
である。 1・・・真空ポンプ 2・・・真空槽 3・・・原反 5・・・モノマーガス供給管 6・・・供給ロール 7・・・巻き取りロール 8・・・ガイドローラー 9・・・交流電源 10A・IOB・・・金属ドラム 11・・・放電室  6A・・・供給ロール6B・・・
供給ロール 7A・・・巻き取りロール 7B・・・巻き取りロール 第2図
FIG. 1 is a block diagram of a thin film manufacturing apparatus according to a first embodiment of the present invention, FIG. 2 is a block diagram of a thin film manufacturing apparatus according to a second embodiment of the present invention, and FIG. 3 is a diagram of a conventional thin film manufacturing apparatus. FIG. 1... Vacuum pump 2... Vacuum tank 3... Original fabric 5... Monomer gas supply pipe 6... Supply roll 7... Winding roll 8... Guide roller 9... AC Power supply 10A, IOB...Metal drum 11...Discharge chamber 6A...Supply roll 6B...
Supply roll 7A...Take-up roll 7B...Take-up roll Fig. 2

Claims (2)

【特許請求の範囲】[Claims] (1)真空層内に原反の走行系を有し、前記原反上にプ
ラズマCVD法により連続的に機能性薄膜を形成する製
造装置において、複数個の電気的に絶縁された金属ドラ
ムを設け、かつ該ドラム間に交流電源を接続し、さらに
該ドラム間の空間であって前記原反に接する位置に、モ
ノマーガスの供給手段を有する放電室を設けたことを特
徴とする薄膜製造装置。
(1) In a manufacturing apparatus that has a running system for the original fabric in a vacuum layer and that continuously forms a functional thin film on the original fabric by plasma CVD method, a plurality of electrically insulated metal drums are used. A thin film manufacturing apparatus characterized in that an AC power source is connected between the drums, and a discharge chamber having a monomer gas supply means is provided in a space between the drums and in contact with the original fabric. .
(2)各ドラム毎に原反の供給ロールと巻き取りロール
を独立に設け、複数個の原反走行系を有する請求項1記
載の薄膜製造装置。
(2) The thin film manufacturing apparatus according to claim 1, wherein a supply roll and a take-up roll for the original fabric are provided independently for each drum, and a plurality of original fabric traveling systems are provided.
JP1324704A 1989-12-13 1989-12-13 Thin film manufacturing equipment Expired - Fee Related JP2587507B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1324704A JP2587507B2 (en) 1989-12-13 1989-12-13 Thin film manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1324704A JP2587507B2 (en) 1989-12-13 1989-12-13 Thin film manufacturing equipment

Publications (2)

Publication Number Publication Date
JPH03183782A true JPH03183782A (en) 1991-08-09
JP2587507B2 JP2587507B2 (en) 1997-03-05

Family

ID=18168780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1324704A Expired - Fee Related JP2587507B2 (en) 1989-12-13 1989-12-13 Thin film manufacturing equipment

Country Status (1)

Country Link
JP (1) JP2587507B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
WO1999018593A1 (en) * 1997-10-06 1999-04-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for surface-treating substrates
JP2001223375A (en) * 2000-02-10 2001-08-17 Semiconductor Energy Lab Co Ltd Carrying apparatus for flexible substrate, and deposition apparatus
JP2009035724A (en) * 2007-07-12 2009-02-19 Sekisui Chem Co Ltd Plasma processing method and apparatus
JP2010111948A (en) * 2009-12-25 2010-05-20 Semiconductor Energy Lab Co Ltd Film deposition system, solar cell and method for producing solar cell
WO2011043047A1 (en) * 2009-10-05 2011-04-14 株式会社神戸製鋼所 Plasma cvd device
US20120180720A1 (en) * 2009-10-22 2012-07-19 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Cvd apparatus
RU2482219C2 (en) * 2008-11-05 2013-05-20 Улвак, Инк. Vacuumised coiling device
CN103249865A (en) * 2010-12-16 2013-08-14 株式会社神户制钢所 Plasma cvd apparatus
JP2014037637A (en) * 2013-11-25 2014-02-27 Kobe Steel Ltd Cvd film deposition device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4268195B2 (en) 2007-02-13 2009-05-27 株式会社神戸製鋼所 Plasma CVD equipment
JP5641877B2 (en) 2010-10-29 2014-12-17 株式会社神戸製鋼所 Plasma CVD equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62241137A (en) * 1986-04-11 1987-10-21 Matsushita Electric Ind Co Ltd Magnetic recording medium manufacturing method and manufacturing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62241137A (en) * 1986-04-11 1987-10-21 Matsushita Electric Ind Co Ltd Magnetic recording medium manufacturing method and manufacturing device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
WO1999018593A1 (en) * 1997-10-06 1999-04-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for surface-treating substrates
US6855379B2 (en) 1997-10-06 2005-02-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for surface-treating substrates
JP2001223375A (en) * 2000-02-10 2001-08-17 Semiconductor Energy Lab Co Ltd Carrying apparatus for flexible substrate, and deposition apparatus
JP2009035724A (en) * 2007-07-12 2009-02-19 Sekisui Chem Co Ltd Plasma processing method and apparatus
RU2482219C2 (en) * 2008-11-05 2013-05-20 Улвак, Инк. Vacuumised coiling device
WO2011043047A1 (en) * 2009-10-05 2011-04-14 株式会社神戸製鋼所 Plasma cvd device
JP2011080104A (en) * 2009-10-05 2011-04-21 Kobe Steel Ltd Plasma cvd apparatus
CN102575349A (en) * 2009-10-05 2012-07-11 株式会社神户制钢所 Plasma CVD device
US9133547B2 (en) 2009-10-05 2015-09-15 Kobe Steel, Ltd. Plasma CVD apparatus
US20120180720A1 (en) * 2009-10-22 2012-07-19 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.) Cvd apparatus
JP2010111948A (en) * 2009-12-25 2010-05-20 Semiconductor Energy Lab Co Ltd Film deposition system, solar cell and method for producing solar cell
CN103249865A (en) * 2010-12-16 2013-08-14 株式会社神户制钢所 Plasma cvd apparatus
JP2014037637A (en) * 2013-11-25 2014-02-27 Kobe Steel Ltd Cvd film deposition device

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