JPH03185892A - Soldering pretreatment of ceramic substrate - Google Patents

Soldering pretreatment of ceramic substrate

Info

Publication number
JPH03185892A
JPH03185892A JP1325685A JP32568589A JPH03185892A JP H03185892 A JPH03185892 A JP H03185892A JP 1325685 A JP1325685 A JP 1325685A JP 32568589 A JP32568589 A JP 32568589A JP H03185892 A JPH03185892 A JP H03185892A
Authority
JP
Japan
Prior art keywords
plated film
nickel plating
substrate
plating film
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1325685A
Other languages
Japanese (ja)
Inventor
Tetsuya Watanabe
哲也 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1325685A priority Critical patent/JPH03185892A/en
Publication of JPH03185892A publication Critical patent/JPH03185892A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3465—Application of solder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To form a solder bump, which is good in wettability and adhesion, by a method wherein a secondary nickel plated film and a gold-plated film are formed on a primary nickel-plated film formed on a pad and the pad is dipped into a solder bath to remove the gold-plated film, the secondary nickel- plated film and the primary nickel-plated film of a prescribed thickness. CONSTITUTION:First, a ceramic substrate 1 is dipped into an alkaline degreasing solution and is cleaned with pure water and thereafter, the substrate 1 is dipped into a dilute sulfuric acid and is again cleaned with pure water. Subsequently, the substrate 1 is kept dipping into an electroless nickel plating bath using sodium hypophosphite as a reducing reagent until a secondary nickel-plated film 15 is obtained and after that, the substrate is cleaned with pure water. Moreover, the substrate 1 is kept dipping into a substituted electroless gold plating bath until a gold-plated film 16 of a thick ness of about 0.1 to 0.2mum is obtained and after that, the substrate is again cleaned with pure water. Moreover, the substrate is dipped into an isopropyl alcohol and after a hot-air drying is performed, a swinging is performed while the substrate is dipped into a lead 37 tin solder bath and the films 16 and 15 and a primary nickel-plated film 10 of a prescribed thickness are dissolved.

Description

【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、半田付けの前処理方法に関し、特にセラミッ
ク基板上のメタライズ上に部品を搭載する際において、
濡れ性および密着性の良好な半田付けが可能とされるセ
ラミック基板の半田付は前処理方法に適用して有効な技
術に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a pretreatment method for soldering, particularly when mounting components on metallization on a ceramic substrate.
Soldering of ceramic substrates, which enables soldering with good wettability and adhesion, relates to a technique that is effective when applied to a pretreatment method.

［従来の技術］ 従来、セラミック基板の半田付は前処理方法としては、
たとえばセラミック基板のタングステンなどによって金
属化されたパッド上に半田付けで部品を搭載するために
、金属化された表面に半田付は可能なニッケルめっき処
理が施され、ニッケルめっき皮膜が形成されている。[Conventional technology] Conventionally, the pretreatment method for soldering ceramic substrates is as follows:
For example, in order to mount components by soldering onto a pad metallized with tungsten or the like on a ceramic substrate, a nickel plating treatment is applied to the metallized surface so that it can be soldered, forming a nickel plating film. .

しかしながら、近年、セラミック基板自体が多種多様化
の傾向にあり、またこれに搭載される部品も種類の異な
るものが数多くなり、セラミック基板がモジュールとし
て完成されるためには、長い製造プロセスを経なければ
ならないという欠点がある。このために、セラミック基
板自体が製造プロセス中にダメージを受け、モジュール
として完成されるのが困難とされている。However, in recent years, ceramic substrates themselves have become more diverse, and the number of different types of components mounted on them has also increased, and in order for ceramic substrates to be completed as modules, they must go through a long manufacturing process. It has the disadvantage that it cannot be used. For this reason, the ceramic substrate itself is damaged during the manufacturing process, making it difficult to complete it as a module.

特に、セラミック基板にニッケルめっき皮膜が形成され
た表面パッドは、後の製造プロセスにおける熱処理や薬
液処理などによって酸化、腐食または汚染物の付着とい
うようなダメージを受は易い。そこで、このダメージを
防止するために、たとえば特開昭６１−１９５９９１号
公報などに記載されるように、ニッケルめっき皮膜の上
に金めつき処理が施され、パッド上にニッケルー金めっ
き皮膜が形成されているものがある。In particular, a surface pad in which a nickel plating film is formed on a ceramic substrate is easily damaged by oxidation, corrosion, or the adhesion of contaminants during heat treatment or chemical treatment in subsequent manufacturing processes. Therefore, in order to prevent this damage, gold plating treatment is performed on the nickel plating film to form a nickel-gold plating film on the pad, as described in, for example, JP-A-61-195991. There is something that has been done.

［発明が解決しようとする課題］ ところが、前記のような従来技術においては、半田の下
地であるニッケルめっき皮膜上に形成される酸化膜また
は腐食膜、あるいは強固に付着する汚染物に対する半田
付は性が考慮されておらず、そのままでは濡れ性および
密着性の悪い半田バンプしか得られず問題であった。[Problems to be Solved by the Invention] However, in the prior art as described above, it is difficult to solder to an oxide film or corrosion film formed on the nickel plating film that is the base for soldering, or to contaminants that adhere firmly. The problem was that the properties were not taken into consideration, and if left as is, only solder bumps with poor wettability and adhesion were obtained.

また、パッド上にニッケルー金めっき皮膜が形成される
場合においては、半田中の金の含有量を増加することに
よって半田の脆化につながるために、金めつき皮膜を厚
く付けることができないという欠点がある。そのために
、金めつき皮膜にピンホールが形成され、このピンホー
ルを通して下地のニッケルめっき皮膜へダメージを与え
るという問題がある。In addition, when a nickel-gold plating film is formed on the pad, the gold plating film cannot be applied thickly because increasing the gold content in the solder causes the solder to become brittle. There is. Therefore, there is a problem in that pinholes are formed in the gold plating film, and the underlying nickel plating film is damaged through the pinholes.

従って、従来の技術においては、濡れ性および密着性の
良好な半田付けが得られず、信頼性の高い部品の搭載が
できないという問題がある。Therefore, in the conventional technology, there is a problem that soldering with good wettability and adhesion cannot be obtained, and components cannot be mounted with high reliability.

そこで、本発明の目的は、セラミック基板のパッド上に
、濡れ性および密着性の良好な半田バンプが形成され、
信頼性の高い部品の搭載が可能とされるセラミック基板
の半田付は前処理方法を提供することにある。Therefore, an object of the present invention is to form solder bumps with good wettability and adhesion on pads of a ceramic substrate,
The purpose of soldering ceramic substrates, which enables reliable mounting of components, is to provide a pretreatment method.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

［課題を解決するための手段］ 本願において開示される発明のうち、代表的なものの概
要を簡単に説明すれば、下記のとおりである。[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions is as follows.

すなわち、本発明のセラミック基板の半田付は前処理方
法は、セラミック基板の金属化されたパッド上に一次ニ
ッケルめっき処理を施し、咳一次ニッケルめっき処理に
より形成された一次ニッケルめっき皮膜上に部品を搭載
する半田付けの前処理方法であって、前記一次ニッケル
めっき皮膜上に、二次ニッケルめっき処理および金めつ
き処理を施し、さらに半田浴に浸漬して前記金めっき処
理および二次ニッケルめっき処理により形成された金め
つき皮膜、二次ニッケルめっき皮膜、および所定の厚さ
の前記一次ニッケルめっき皮膜を除去するようにしたも
のである。That is, the pretreatment method for soldering a ceramic substrate of the present invention involves performing a primary nickel plating treatment on the metallized pad of the ceramic substrate, and then placing the component on the primary nickel plating film formed by the primary nickel plating treatment. A pre-treatment method for soldering to be mounted, in which the primary nickel plating film is subjected to secondary nickel plating treatment and gold plating treatment, and further immersed in a solder bath to perform the gold plating treatment and secondary nickel plating treatment. The gold plating film, the secondary nickel plating film, and the primary nickel plating film of a predetermined thickness are removed.

［作用コ 前記したセラミック基板の半田付は前処理方法によれば
、セラミック基板の金属化されたパッド上に形成された
一次ニッケルめっき皮膜上に、二次ニッケルめっき皮膜
および金めつき皮膜を形成し、さらに半田浴に浸漬して
金めつき皮膜、二次ニッケルめっき皮膜、および所定の
厚さの一次ニッケルめっき皮膜を除去することにより、
一次ニッケルめっき皮膜の表面にあった酸化膜または腐
食膜、あるいは強固に付着した汚染物を二次ニッケルめ
っき皮膜および金めつき皮膜によって覆い、この金めつ
き皮膜および二次ニッケルめっき皮膜の溶解とともに一
次ニッケルめっき皮膜表面の酸化膜や腐食膜または汚染
物も溶解し、半田付けに適した清浄なニッケルめっき皮
膜面を形成することができる。これにより、濡れ性およ
び密着性の良好な半田付けができる。[Function] According to the pretreatment method for soldering the ceramic substrate described above, a secondary nickel plating film and a gold plating film are formed on the primary nickel plating film formed on the metallized pad of the ceramic board. Then, by further immersing it in a solder bath to remove the gold plating film, the secondary nickel plating film, and the primary nickel plating film of a predetermined thickness,
The oxide film or corrosion film on the surface of the primary nickel plating film, or the strongly adhered contaminants, is covered with the secondary nickel plating film and the gold plating film, and as the gold plating film and the secondary nickel plating film dissolve, Oxide films, corrosion films, and contaminants on the surface of the primary nickel plating film are also dissolved, making it possible to form a clean nickel plating film surface suitable for soldering. This allows soldering with good wettability and adhesion.

［実施例］ 第１図は本発明の一実施例であるセラミック基板に半田
付けをする前の状態を示す部分断面図、第２図は本実施
例のセラミック基板に半田付けをした後の状態を示す部
分断面図、第３１！ｌは本実施例のセラミック基板に部
品を搭載した半導体集積回路装置を示す断面図である。[Example] Fig. 1 is a partial cross-sectional view showing a state before soldering to a ceramic board according to an embodiment of the present invention, and Fig. 2 shows a state after soldering to a ceramic board according to this embodiment. Partial sectional view showing 31st! FIG. 1 is a sectional view showing a semiconductor integrated circuit device in which components are mounted on a ceramic substrate of this embodiment.

まず、第３図により本実施例のセラミック基板に搭載さ
れた半導体集積回路装置の構成を説明する。First, the configuration of the semiconductor integrated circuit device mounted on the ceramic substrate of this embodiment will be explained with reference to FIG.

本実施例のセラミック基板に搭載された半導体集積回路
装置は、たとえばセラミック基板ｌの表面に、半導体チ
ップ２が搭載され、封止キャップ３によって気密封止さ
れている。そして、セラミツク基板ｌの裏面に接合され
る外部リード４によって、外部に接続される構造とされ
ている。In the semiconductor integrated circuit device mounted on the ceramic substrate of this embodiment, a semiconductor chip 2 is mounted on the surface of a ceramic substrate l, for example, and hermetically sealed with a sealing cap 3. The structure is such that it is connected to the outside through an external lead 4 bonded to the back surface of the ceramic substrate l.

セラミック基板１は、半導体チップ２が搭載されるＣＣ
Ｂ付はパッド５、封止キャップ搭載パッド６および外部
リード付はパッド７を備え、アルミナを主成分とした複
数枚のグリーンシートが一体化されて形成されている。The ceramic substrate 1 is a CC on which a semiconductor chip 2 is mounted.
The type with B includes a pad 5, the sealing cap mounting pad 6, and the type with an external lead includes a pad 7, which are formed by integrating a plurality of green sheets mainly made of alumina.

また、このグリーンシートの表裏面には、スクリーン印
刷によって配線パターンが形成され、このグリーンシー
トが複数枚張り合わされて焼結されることによって、セ
ラミック基板１およびその表裏面に配線メタライズ層８
が形成されている。Further, a wiring pattern is formed on the front and back surfaces of this green sheet by screen printing, and by pasting together and sintering a plurality of these green sheets, a wiring metallized layer 8 is formed on the ceramic substrate 1 and its front and back surfaces.
is formed.

さらに、セラミック基板１の中心部には、ポリイミド樹
脂を絶縁体としたアルミ配線の薄膜多層配線層９が形成
され、この薄膜多層配線層９お、よび上記配線メタライ
ズ層８の表面に、無電解めっき法によって一次ニッケル
めっき皮膜１０、すなわちＣＣＢ付はパッド５、封止キ
ャップ搭載バッド６および外部リード付はパッド７が形
成されている。Furthermore, a thin film multilayer wiring layer 9 of aluminum wiring using polyimide resin as an insulator is formed in the center of the ceramic substrate 1, and the surface of this thin film multilayer wiring layer 9 and the wiring metallized layer 8 is electroless A primary nickel plating film 10 is formed by plating, that is, a pad 5 with a CCB, a pad 6 with a sealing cap, and a pad 7 with an external lead.

そして、ＣＣＢ付はパッド５および封止キャップ搭載バ
ッド６上に、半田１１を介して半導体チップ２および封
止キャップ３が搭載され、また外部リード付はパッド７
に外部リード４が接合されることによって、セラミック
基板１に搭載された半導体集積回路装置が完成される。The semiconductor chip 2 and the sealing cap 3 are mounted on the pad 5 and the sealing cap mounting pad 6 via the solder 11 for the case with CCB, and the pad 7 for the case with external leads.
By joining the external leads 4 to the ceramic substrate 1, the semiconductor integrated circuit device mounted on the ceramic substrate 1 is completed.

次に、本実施例の作用について、第１図および第２図に
基づいて説明する。Next, the operation of this embodiment will be explained based on FIGS. 1 and 2.

以上のように構成される半導体集積回路装置においては
、一次ニッケルめっき皮膜１０が形成された後の製造プ
ロセスにおける酸化膜１２、腐食膜１３または汚染物１
４の付着というようなダメージを除去するために、半田
１１付けの前に以下の処理を実施する。In the semiconductor integrated circuit device configured as described above, oxide film 12, corrosion film 13, or contaminants 1 are present in the manufacturing process after the primary nickel plating film 10 is formed.
In order to remove damage such as adhesion of 4, the following process is performed before soldering 11.

始めに、セラミック基板１をアルカリ性の脱脂液（たと
えば、ＥＥＪＡ製のイードレックス＃１２液、５０ｇ／
Ｊ！、６０℃に加熱〉に浸漬し、純水洗を行った後に、
５０　ｍ　ｌ　／　１の希硫酸中に浸漬し、再び純水洗
を行う。First, the ceramic substrate 1 is soaked in an alkaline degreasing liquid (for example, Eedrex #12 liquid manufactured by EEJA, 50 g/
J! , heated to 60℃> and washed with pure water,
Immerse in 50 ml/1 dilute sulfuric acid and wash again with pure water.

続いて、次亜リン酸＋トリウムを還元剤とする無電解ニ
ッケルめっき浴（たとえば、日本カンゼン製のシューマ
５６８０）に厚さがほぼ１〜２μｍの二次ニッケルめっ
き皮膜１５を得るまで浸漬を続け、その後に純水洗を行
う。さらに、置換型の無電解金めっき浴（たとえば、日
本エンゲルハルト社製のアトメックス）に厚さがほぼ０
．１−０゜２μｍの金めつき皮膜１６を得るまで浸漬を
続け、その後に再び純水洗を行うことによって第１図の
構造となる。Subsequently, immersion was continued in an electroless nickel plating bath using hypophosphorous acid + thorium as a reducing agent (for example, Schumer 5680 manufactured by Nippon Kanzen) until a secondary nickel plating film 15 with a thickness of approximately 1 to 2 μm was obtained. , followed by washing with pure water. Furthermore, in a displacement-type electroless gold plating bath (for example, Atomex manufactured by Engelhard Japan), the thickness is almost 0.
．． The immersion is continued until a gold plating film 16 of 1-0.2 .mu.m is obtained, and then the structure shown in FIG. 1 is obtained by washing with pure water again.

さらに、イソプロピルアルコールに浸漬し、６０℃の熱
風乾燥を行った後に、鉛−３７すすの半田浴（２３０℃
に加熱〉中に浸漬しなから揺動を行い、金めつき皮膜１
６、二次ニッケルめっき皮［１５および所定の厚さの一
次ニッケルめっき皮膜ｌＯを溶解する。Furthermore, after immersing in isopropyl alcohol and drying with hot air at 60°C, a solder bath of lead-37 soot (230°C) was applied.
Heat the gold plated film 1.
6. Dissolve the secondary nickel plating film [15] and the primary nickel plating film lO of a predetermined thickness.

以上の処理により、熱処理や薬液処理などによって一次
ニッケルめっき皮膜１０上に存在した酸化膜１２、腐食
膜１３および汚染物１４が同時に除去され、第２図のよ
うに清浄な一次ニッケルめっき皮膜１０面への半田付け
ができる。Through the above treatment, the oxide film 12, corrosion film 13, and contaminants 14 that were present on the primary nickel plating film 10 due to heat treatment, chemical treatment, etc. are removed at the same time, and the surface of the primary nickel plating film 10 is clean as shown in FIG. Can be soldered to.

従って、本実施例のセラミック基板１に搭載される半導
体集積回路装置によれば、一次ニッケルめっき皮膜ｌＯ
上に、二次ニッケルめっき皮膜１５および金めつき皮膜
１６を形威し、さらに半田浴に浸漬して金めつき皮膜１
６、二次ニッケルめっき皮１１１＋１５および一次ニッ
ケルめっき皮膜１０の所定の厚さを除去することにより
、酸化膜１２、腐食膜１３および汚染物１４が除去され
、半田１１を清浄な一次ニッケルめっき皮膜１０面と接
合することができるので、濡れ性と密着性との良好な半
田付けが可能である。Therefore, according to the semiconductor integrated circuit device mounted on the ceramic substrate 1 of this embodiment, the primary nickel plating film lO
A secondary nickel plating film 15 and a gold plating film 16 are formed on top, and the gold plating film 1 is further immersed in a solder bath.
6. By removing a predetermined thickness of the secondary nickel plating film 111+15 and the primary nickel plating film 10, the oxide film 12, corrosion film 13, and contaminants 14 are removed, and the solder 11 is removed from the clean primary nickel plating film 10. Since it can be bonded to the surface, soldering with good wettability and adhesion is possible.

以上、本発明者によってなされた発明を実施例に基づき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。As above, the invention made by the present inventor has been specifically explained based on Examples, but it should be noted that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Not even.

たとえば、本実施例においては、セラミック基板１に半
導体チップ２を搭載した半導体集積回路装置について説
明したが、本発明は前記実施例に賑定されるものではな
く、たとえば電子部品などを搭載するセラミック基板１
などについても広く適用され、これらのセラミック基板
１のパッド上に部品を搭載する場合に適した半田付けの
前処理方法である。For example, in this embodiment, a semiconductor integrated circuit device in which a semiconductor chip 2 is mounted on a ceramic substrate 1 has been described. Board 1
This is a pre-processing method for soldering suitable for mounting components on the pads of these ceramic substrates 1.

［発明の効果］ 本願において開示される発明のうち、代表的なものによ
って得られる効果を簡単に説明すれば、下記のとおりで
ある。[Effects of the Invention] Among the inventions disclosed in this application, the effects obtained by typical inventions are briefly described below.

すなわち、セラミック基板の金属化されたパッド上に一
次ニッケルめっき処理を施し、この一次ニッケルめっき
処理により形成された一次ニッケルめっき皮膜上に部品
を搭載する半田付けの前処理方法において、一次ニッケ
ルめっき皮膜上に、二次ニッケルめっき処理および金め
つき処理を施し、さらに半田浴に浸漬して金めつき処理
および二次ニッケルめっき処理により形成された金めつ
き皮膜、二次ニッケルめっき皮膜、および所定の厚さの
一次ニッケルめっき皮膜を除去することにより、一次ニ
ッケルめっき皮膜の表面にあった酸化膜または腐食膜、
あるいは強固に付着した汚染物を二次ニッケルめっき皮
膜および金めつき皮膜によって覆い、この金めつき皮膜
および二次ニッケルめっき皮膜の溶解とともに一次ニッ
ケルめっき皮膜表面の酸化膜や腐食膜または汚染物も溶
解し、半田付けに適した清浄なニッケルめっき皮膜面を
形成することができるので、濡れ性および密着性の良好
な半田付けが可能である。That is, in a soldering pretreatment method in which a primary nickel plating process is performed on a metallized pad of a ceramic substrate, and a component is mounted on the primary nickel plating film formed by this primary nickel plating process, the primary nickel plating film is A gold plating film, a secondary nickel plating film, and a predetermined gold plating film are formed by performing a secondary nickel plating process and a gold plating process on the top, and then immersing it in a solder bath to form a gold plating process and a secondary nickel plating process. By removing the primary nickel plating film with a thickness of
Alternatively, firmly adhered contaminants are covered with a secondary nickel plating film and a gold plating film, and as the gold plating film and secondary nickel plating film dissolve, oxide films, corrosion films, or contaminants on the surface of the primary nickel plating film are also removed. Since it is possible to melt and form a clean nickel plating film surface suitable for soldering, soldering with good wettability and adhesion is possible.

この結果、一次ニッケルめっき皮膜形成後の製造プロセ
スにおける熱処理や薬液処理などによるダメージを除去
することができるので、半田付けの濡れ性および密着性
を損ねることなく、信頼性の高い部品の搭載が可能とさ
れるセラミック基板の半田付は前処理方法を得ることが
できる。As a result, damage caused by heat treatment and chemical treatment during the manufacturing process after the formation of the primary nickel plating film can be removed, allowing highly reliable components to be mounted without compromising solder wettability and adhesion. A pretreatment method can be used for soldering ceramic substrates.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の一実施例であるセラミック基板に半田
付けをする前の状態を示す部分断面図、第２図は本実施
例のセラミック基板に半田付けをした後の状態を示す部
分断面図、 第３図は本実施例のセラミック基板に部品を搭載した半
導体集積回路装置を示す断面図である。 １・・・セラミック基板、２・・・半導体チップ、３・
・・封止キャップ、４・・・外８リード、５・・・ＣＣ
Ｂ付はパッド、６・・・封止キャップ搭載パッド、７・
・・外部リード付はパッド、８・・・配線メタライズ層
、９・・・薄膜多層配線層、１０・・・一次ニッケルめ
っき皮膜、１１・・・半田、１２・・・酸化膜、１３・
・・腐食膜、１４・・・汚染物、１５・・・二次ニッケ
ルめっき皮膜、１６・・・金めつき皮膜。FIG. 1 is a partial sectional view showing the state before soldering to a ceramic substrate according to an embodiment of the present invention, and FIG. 2 is a partial sectional view showing the state after soldering to the ceramic substrate according to this embodiment. FIG. 3 is a sectional view showing a semiconductor integrated circuit device in which components are mounted on a ceramic substrate of this embodiment. 1... Ceramic substrate, 2... Semiconductor chip, 3.
...Sealing cap, 4...Outer 8 leads, 5...CC
Pad with B, 6...Pad with sealing cap, 7.
... Pad with external lead, 8... Wiring metallized layer, 9... Thin film multilayer wiring layer, 10... Primary nickel plating film, 11... Solder, 12... Oxide film, 13...
...Corrosion film, 14...Contaminants, 15...Secondary nickel plating film, 16...Gold plating film.

Claims (1)

【特許請求の範囲】[Claims] １．セラミック基板の金属化されたパッド上に一次ニッ
ケルめっき処理を施し、該一次ニッケルめっき処理によ
り形成された一次ニッケルめっき皮膜上に部品を搭載す
る半田付けの前処理方法であって、前記一次ニッケルめ
っき皮膜上に、二次ニッケルめっき処理および金めっき
処理を施し、さらに半田浴に浸漬して前記金めっき処理
および二次ニッケルめっき処理により形成された金めっ
き皮膜、二次ニッケルめっき皮膜、および所定の厚さの
前記一次ニッケルめっき皮膜を除去することを特徴とす
るセラミック基板の半田付け前処理方法。1. A soldering pretreatment method in which a primary nickel plating process is performed on a metallized pad of a ceramic substrate, and a component is mounted on the primary nickel plating film formed by the primary nickel plating process, the method comprising: A secondary nickel plating treatment and a gold plating treatment are performed on the film, and the gold plating film and the secondary nickel plating film formed by the gold plating treatment and the secondary nickel plating treatment are further immersed in a solder bath. A method for pre-soldering a ceramic substrate, comprising removing a thick primary nickel plating film.
JP1325685A 1989-12-15 1989-12-15 Soldering pretreatment of ceramic substrate Pending JPH03185892A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1325685A JPH03185892A (en) 1989-12-15 1989-12-15 Soldering pretreatment of ceramic substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1325685A JPH03185892A (en) 1989-12-15 1989-12-15 Soldering pretreatment of ceramic substrate

Publications (1)

Publication Number Publication Date
JPH03185892A true JPH03185892A (en) 1991-08-13

Family

ID=18179575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1325685A Pending JPH03185892A (en) 1989-12-15 1989-12-15 Soldering pretreatment of ceramic substrate

Country Status (1)

Country Link
JP (1) JPH03185892A (en)

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