JPH031891Y2 - - Google Patents
Info
- Publication number
- JPH031891Y2 JPH031891Y2 JP1985150203U JP15020385U JPH031891Y2 JP H031891 Y2 JPH031891 Y2 JP H031891Y2 JP 1985150203 U JP1985150203 U JP 1985150203U JP 15020385 U JP15020385 U JP 15020385U JP H031891 Y2 JPH031891 Y2 JP H031891Y2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- metal
- metal pin
- ceramic
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 93
- 229910052751 metal Inorganic materials 0.000 claims description 91
- 239000002184 metal Substances 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 79
- 238000009429 electrical wiring Methods 0.000 description 6
- 238000005219 brazing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- Multi-Conductor Connections (AREA)
Description
【考案の詳細な説明】
（産業上の利用分野）
本考案はセラミツク基板と金属ピンの取着構造
に関し、特に金属ピンをカシメによりセラミツク
基板に取着する際の取着構造に関するものであ
る。[Detailed Description of the Invention] (Industrial Application Field) The present invention relates to a structure for attaching a ceramic substrate to a metal pin, and particularly relates to a structure for attaching a metal pin to a ceramic substrate by caulking.
（従来の技術）
従来、セラミツク基板への金属ピンの取着は、
生もしくは結焼セラミツク体表面に、モリブデン
−マンガン（Mo−Mn）、タングステン（Ｗ）等
の高融点金属粉末に有機バインダー及び溶剤を添
加し、ペースト状と成したものをスクリーン印刷
により塗布し、これを還元雰囲気中で焼成して高
融点金属とセラミツク基板とを焼結一体化させ、
メタライズ金属層を被着させるとともに該メタラ
イズ金属層上に金属ピンを銀ロウ等のロウ材を介
し、ロウ付けすることによつて行われている。(Conventional technology) Conventionally, metal pins were attached to ceramic substrates by
A paste made by adding an organic binder and a solvent to high melting point metal powder such as molybdenum-manganese (Mo-Mn) or tungsten (W) is applied to the surface of a raw or sintered ceramic body by screen printing. This is fired in a reducing atmosphere to sinter and integrate the high melting point metal and the ceramic substrate.
This is accomplished by depositing a metallized metal layer and brazing a metal pin onto the metallized metal layer through a brazing material such as silver solder.
しかし乍ら、この従来のセラミツク基板と金属
ピンの取着構造においてはセラミツク基板に被着
形成したメタライズ金属層に金属ピンをロウ付け
する場合、ロウ材を完全に溶融するためにセラミ
ツク基板と金属ピンとの間にロウ材を介在させた
後、約800℃の温度で焼成しなければならず、こ
の際セラミツク基板と金属ピンの熱膨張係数の相
違に起因して金属ピンをセラミツク基板の所定位
置にロウ付けできなかつたり、セラミツク基板に
クラツクを発生したりするという欠点を有してい
た。 However, in this conventional ceramic substrate and metal pin attachment structure, when brazing the metal pins to the metallized metal layer formed on the ceramic substrate, the ceramic substrate and the metal pin must be bonded in order to completely melt the brazing material. After interposing the brazing material between the pin and the metal pin, it must be fired at a temperature of approximately 800°C.Due to the difference in thermal expansion coefficient between the ceramic substrate and the metal pin, the metal pin must be held in place on the ceramic substrate. This method has disadvantages in that it cannot be soldered to ceramic substrates and it causes cracks in ceramic substrates.
そこで、この従来のセラミツク基板と金属ピン
の取着構造における上記欠点を解消するためにセ
ラミツク基板に設けた貫通孔内に金属ピンを挿通
させるとともに該金属ピンの一部をセラミツク基
板を挟持させるように変形させ、これによつて金
属ピンをセラミツク基板に取着した、いわゆる金
属ピンのカシメ止めによる取着構造が提案され
た。 Therefore, in order to eliminate the above-mentioned drawbacks of the conventional ceramic substrate and metal pin attachment structure, a metal pin is inserted into a through hole provided in the ceramic substrate, and a part of the metal pin is held between the ceramic substrate. A so-called attachment structure using metal pin caulking has been proposed, in which the metal pin is attached to the ceramic substrate by deforming the ceramic substrate.
この金属ピンのカシメ止めによる取着構造は第
２図に示すように、表面に例えば各種電気配線１
２を有するセラミツク基板１１に貫通孔１３を形
成し、該貫通孔１３内に金属ピン１４を挿通させ
るとともに上下方向から約50Kg／cm2の圧力を印加
し、金属ピン１４の一部にセラミツク基板１１の
両主面で、該セラミツク基板１１を挟持するよう
な鍔部１４ａ，１４ｂを形成させることによつて
金属ピン１４をセラミツク基板１１に取着してい
る。 As shown in Fig. 2, this attachment structure by caulking metal pins has various electrical wiring lines on the surface, for example.
2, a metal pin 14 is inserted into the through hole 13, and a pressure of about 50 kg/cm 2 is applied from above and below to a part of the metal pin 14 in the ceramic substrate. The metal pin 14 is attached to the ceramic substrate 11 by forming flanges 14a and 14b on both main surfaces of the ceramic substrate 11 so as to sandwich the ceramic substrate 11 therebetween.
尚、この場合、セラミツク基板１１の主面に設
けられた各種電気配線１２は金属ピン１４の鍔部
１４ａで金属ピン１４に電気的に接続しており、
金属ピン１４を外部電気回路に接続することによ
つて各種電気配線１２は金属ピン１４を介し外部
電気回路と接続されることとなる。 In this case, the various electrical wirings 12 provided on the main surface of the ceramic substrate 11 are electrically connected to the metal pin 14 at the flange 14a of the metal pin 14.
By connecting the metal pins 14 to the external electric circuit, the various electric wirings 12 are connected to the external electric circuit via the metal pins 14.
しかし乍ら、このカシメ止めによるセラミツク
基板と金属ピンの取着構造は、金属ピン１４がセ
ラミツク基板１１に設けた貫通孔１３内に挿通さ
れ、位置決めされていること及び金属ピン１４を
取着する際に加熱工程が一切ないこと等から金属
ピン１４をセラミツク基板１１の所定個所に正確
に取着し得るもののセラミツクは一般に脆弱であ
ることから金属ピン１４に上下方向から約50Kg／
cm2の圧力を印加し変形させてかしめ止めする場
合、該印加圧力がセラミツク基板１１の両主面と
貫通孔１３内壁とで形成される角部Ａに作用し
て、角部Ａに欠けを発生してしまい、その結果、
金属ピンをセラミツク基板に強固に取着できない
という課題を有していた。 However, this attachment structure of the ceramic substrate and the metal pin by caulking requires that the metal pin 14 is inserted into the through hole 13 provided in the ceramic substrate 11 and positioned, and that the metal pin 14 is attached. Although it is possible to accurately attach the metal pins 14 to predetermined locations on the ceramic substrate 11 because there is no heating process involved, ceramics are generally fragile, so the metal pins 14 are loaded with approximately 50 kg/kg from above and below.
When a pressure of cm 2 is applied to deform and caulk, the applied pressure acts on the corner A formed by both main surfaces of the ceramic substrate 11 and the inner wall of the through hole 13, causing a chip in the corner A. occurred, and as a result,
The problem was that the metal pins could not be securely attached to the ceramic substrate.
（考案の目的）
本考案は上記欠点に鑑み案出されたもので、そ
の目的は金属ピンをセラミツク基板にカシメ止め
する際、セラミツク基板に欠けが発生するのを皆
無となし、金属ピンをセラミツク基板に強固に取
着することができるセラミツク基板と金属ピンの
取着構造を提供することにある。(Purpose of the invention) The present invention was devised in view of the above-mentioned drawbacks, and its purpose is to eliminate the occurrence of chips in the ceramic substrate when caulking metal pins to a ceramic substrate, An object of the present invention is to provide a structure for attaching a ceramic substrate to a metal pin, which can be firmly attached to the substrate.
本考案のセラミツク基板と金属ピンの取着構造
はセラミツク基板に金属ピンを取着して成る部
品、具体的には外部リードピンが多数取着されて
成る半導体パツケージが電気回路配線基板等にお
いて外部リードピンをセラミツク基板に取着する
際に好適に使用される。 The attachment structure of the ceramic substrate and metal pins of the present invention is a component made by attaching metal pins to a ceramic substrate, specifically, a semiconductor package consisting of a large number of external lead pins attached to an electric circuit wiring board, etc. It is suitably used when attaching a ceramic substrate to a ceramic substrate.
（問題点を解決するための手段）
本考案はセラミツク基板に設けた貫通孔内に金
属ピンを挿通させるとともに該金属ピンの一部を
セラミツク基板を挟持するよう変形させることに
よつて金属ピンをセラミツク基板に取着して成る
セラミツク基板と金属ピンの取着構造において、
前記少なくともセラミツク基板の主面と貫通孔内
壁とで形成される角部がヤング率1.5×104Kg／mm2
以上の剛性金属層により覆設されていることを特
徴とするものである。(Means for Solving the Problems) The present invention inserts a metal pin into a through hole provided in a ceramic substrate and deforms a part of the metal pin so as to sandwich the ceramic substrate. In an attachment structure of a ceramic substrate and metal pins attached to a ceramic substrate,
The corner formed by at least the main surface of the ceramic substrate and the inner wall of the through hole has a Young's modulus of 1.5×10 4 Kg/mm 2
It is characterized in that it is covered with the above-mentioned rigid metal layer.
（実施例）
次に、本考案を第１図に示す実施例に基づき詳
細に説明する。(Example) Next, the present invention will be explained in detail based on the example shown in FIG.
第１図は本考案のセラミツク基板と金属ピンの
取着構造をセラミツク配線基板に適用した場合の
一実施例を示し、１はアルミナ（Al2O3）等のセ
ラミツクから成るセラミツク基板であり、その表
面に電気配線２が被着形成されている。 FIG. 1 shows an embodiment in which the ceramic substrate and metal pin attachment structure of the present invention is applied to a ceramic wiring board. 1 is a ceramic substrate made of ceramic such as alumina (Al 2 O 3 ); Electric wiring 2 is formed on the surface thereof.
前記表面に電気配線２を有するセラミツク基板
１は、まずアルミナ（Al2O3）等のセラミツク粉
末に粘結剤及び溶剤を添加・混合し泥漿状と成す
とともにこれを従来周知のドクターブレード法や
カレンダーロール法等によつてシート状と成し、
セラミツクグリーンシート（セラミツク生シー
ト）を得る。次に前記グリーンシート上にモリブ
デン−マンガン（Mo−Mn）やタングステン
（Ｗ）等の金属粉末に有機バインダー及び溶剤を
添加混合して成る導電性ペーストをスクリーン印
刷により印刷し、所望パターンの電気配線を形成
した後、該セラミツクグリーンシートを約1600℃
の温度で焼成し、導電性ペーストとセラミツクグ
リーンシートとを焼成一体化させることによつて
形成される。 The ceramic substrate 1 having the electrical wiring 2 on its surface is first prepared by adding and mixing a binder and a solvent to ceramic powder such as alumina (Al 2 O 3 ) to form a slurry, and then applying the well-known doctor blade method or the like. Formed into a sheet by calender roll method etc.
Obtain ceramic green sheet (ceramic raw sheet). Next, a conductive paste made by mixing metal powder such as molybdenum-manganese (Mo-Mn) or tungsten (W) with an organic binder and a solvent is printed on the green sheet by screen printing, and a desired pattern of electrical wiring is formed. After forming the ceramic green sheet, the ceramic green sheet is heated to about 1600℃.
It is formed by firing the conductive paste and the ceramic green sheet at a temperature of .
また前記セラミツク基板１には多数の貫通孔３
が形成されており、該貫通孔３内には後述する金
属ピン４が挿通される。 Further, the ceramic substrate 1 has a large number of through holes 3.
A metal pin 4, which will be described later, is inserted into the through hole 3.
前記貫通孔３はセラミツク基板１を得る際に、
セラミツクグリーンシートに従来周知の打抜き加
工法により穿孔しておくことによつて形成され、
その孔径は挿通される金属ピン４の外径と実質的
に同一となるように形成されている。 The through hole 3 is formed when obtaining the ceramic substrate 1.
It is formed by punching holes in a ceramic green sheet using a well-known punching method.
The diameter of the hole is formed to be substantially the same as the outer diameter of the metal pin 4 inserted therethrough.
また前記貫通孔３の開口部、即ちセラミツク基
板１の両主面と貫通孔３の内壁とで形成される角
部Ｂにはヤング率が1.5×104Kg／mm2以上の剛性金
属層５が覆設されており、該剛性金属層５は例え
ばタングステン（ヤング率：3.5×104Kg／mm2）、
モリブデン（ヤング率：4.2×104Kg／mm2）、マン
ガン（ヤング率：1.6×104Kg／mm2）の金属から成
り、タングステン（Ｗ）等の金属粉末に有機バイ
ンダー及び溶剤を添加してペースト状となしたも
のをセラミツクグリーンシートに貫通孔を穿孔し
た後、角部Ｂに相当する部位にスクリーン印刷に
より印刷することによつて被着形成される。 Further, at the opening of the through hole 3, that is, at the corner B formed by both main surfaces of the ceramic substrate 1 and the inner wall of the through hole 3, a rigid metal layer 5 having a Young's modulus of 1.5×10 4 Kg/mm 2 or more is provided. The rigid metal layer 5 is made of, for example, tungsten (Young's modulus: 3.5×10 4 Kg/mm 2 ),
It is made of metals such as molybdenum (Young's modulus: 4.2×10 4 Kg/mm 2 ) and manganese (Young's modulus: 1.6×10 4 Kg/mm 2 ), and is made by adding an organic binder and a solvent to metal powder such as tungsten (W). After forming a paste into a ceramic green sheet, a through hole is punched in the ceramic green sheet, and then the paste is printed on the portion corresponding to the corner B by screen printing.
この剛性金属層５はヤング率が1.5×104Kg／mm2
以上と高く、極めて変形しにくい材料であること
から該剛性金属層５をセラミツク基板１の貫通孔
３の開口角部Ｂに覆設させておくと角部Ｂに金属
ピンカシメ止めする際に圧力が印加されたとして
も該圧力は剛性金属層５で遮断されてセラミツク
基板１に直接作用することはなく、セラミツク基
板１に欠けを発生するのが有効に防止される。
尚、前記剛性金属層５はセラミツク基板１の主面
に被着形成される電気配線２と同一材料と成すと
セラミツク基板１に電気配線２を被着形成する際
に同時に被着形成でき好適である。 This rigid metal layer 5 has a Young's modulus of 1.5×10 4 Kg/mm 2
Since the rigid metal layer 5 is made of a material that is extremely difficult to deform, if the opening corner B of the through hole 3 of the ceramic substrate 1 is covered with the rigid metal layer 5, the pressure will be reduced when the metal pin is caulked to the corner B. Even if pressure is applied, the pressure is blocked by the rigid metal layer 5 and does not directly act on the ceramic substrate 1, thereby effectively preventing the ceramic substrate 1 from being chipped.
Preferably, the rigid metal layer 5 is made of the same material as the electrical wiring 2 to be formed on the main surface of the ceramic substrate 1, since it can be formed at the same time as the electrical wiring 2 is formed on the ceramic substrate 1. be.
前記セラミツク基板１の貫通孔３内には金属ピ
ン４が挿通されており、該金属ピン４はその一部
が圧力により変形して鍔部４ａ，４ｂを形成し、
鍔部４ａ，４ｂでセラミツク基板１の挟持するこ
とによつてセラミツク基板１に取着される。 A metal pin 4 is inserted into the through hole 3 of the ceramic substrate 1, and a portion of the metal pin 4 is deformed by pressure to form flanges 4a and 4b.
It is attached to the ceramic substrate 1 by sandwiching the ceramic substrate 1 between the flanges 4a and 4b.
また前記金属ピン４の鍔部４ａ，４ｂは金属ピ
ン４をセラミツク基板１の貫通孔３内に挿通させ
た後、その上下方向より約50Kg／cm2の圧力で押圧
し、金属ピン４の一部を、セラミツク基板１の両
主面でセラミツク基板１を挟持するように変形さ
せる、いわゆるカシメによつて形成される。尚、
この場合、金属ピン４の一部を変形させるための
圧力がセラミツク基板１の貫通孔３の開口角部Ｂ
に印加されることとなるが、角部Ｂには前記剛性
金属層５が覆設してあることから角部Ｂは欠けを
生じることがなく、これによつて金属ピン４はセ
ラミツク基板１に強固に取着することが可能とな
る。 Further, the flanges 4a and 4b of the metal pin 4 are formed by inserting the metal pin 4 into the through hole 3 of the ceramic substrate 1 and then pressing the metal pin 4 with a pressure of about 50 kg/cm 2 from above and below. It is formed by so-called caulking, in which the parts are deformed so as to sandwich the ceramic substrate 1 between both main surfaces of the ceramic substrate 1. still,
In this case, the pressure for deforming a part of the metal pin 4 is applied to the opening corner B of the through hole 3 of the ceramic substrate 1.
However, since the corner B is covered with the rigid metal layer 5, the corner B will not be chipped, and as a result, the metal pin 4 will be applied to the ceramic substrate 1. It becomes possible to attach firmly.
尚、前記金属ピン４は例えば銅（Cu）、コバー
ル（Fe−Ni−Co）等の圧力によつて容易に変形
し得る金属から成り、従来周知の金属加工法によ
つて円柱状に形成されている。 The metal pin 4 is made of a metal that can be easily deformed by pressure, such as copper (Cu) or Kovar (Fe-Ni-Co), and is formed into a cylindrical shape by a conventionally well-known metal processing method. ing.
また金属ピン４はその外径がセラミツク基板１
に設けた貫通孔３の内径と実質的に同一と成して
あり、金属ピン４を貫通孔３内に挿通させた際、
金属ピン４が遊動するのを有効に防止している。 Further, the outer diameter of the metal pin 4 is the same as that of the ceramic substrate 1.
The inner diameter of the through hole 3 is substantially the same as that of the through hole 3, and when the metal pin 4 is inserted into the through hole 3,
This effectively prevents the metal pin 4 from moving loosely.
更に前記金属ピン４はセラミツク基板１に取着
させた際、セラミツク基板１の主面に形成した電
気配線２と電気的に接続され金属ピン４を外部電
気回路に接続することによつて電気配線２は金属
ピン４を介し外部電気回路と接続されることとな
る。 Furthermore, when the metal pins 4 are attached to the ceramic substrate 1, they are electrically connected to the electric wiring 2 formed on the main surface of the ceramic substrate 1, and the electric wiring is connected by connecting the metal pins 4 to an external electric circuit. 2 will be connected to an external electric circuit via metal pins 4.
（考案の効果）
かくして、本考案のセラミツク基板と金属ピン
の取着構造によれば、セラミツク基板の主面と、
該セラミツク基板に設けた貫通孔内壁とで形成さ
れる角部をヤング率1.5×104Kg／mm2以上の剛性金
属層で覆設したことから貫通孔内に金属ピンを挿
通させるとともにその上下方向から約50Kg／cm2の
圧力を印加して金属ピンの一部をセラミツク基板
の両主面で、該セラミツク基板を挟持するように
変形させ、いわゆるカシメ止めした場合、金属ピ
ン変形させるための圧力は剛性金属層により遮断
されてセラミツク基板に作用することがなく、セ
ラミツク基板に欠けの発生を皆無として金属ピン
をセラミツク基板に強固に取着することが可能と
なる。(Effect of the invention) Thus, according to the mounting structure of the ceramic substrate and metal pin of the invention, the main surface of the ceramic substrate and
Since the corner formed by the inner wall of the through hole provided in the ceramic substrate is covered with a rigid metal layer with a Young's modulus of 1.5×10 4 Kg/mm 2 or more, a metal pin can be inserted into the through hole and the upper and lower parts of the through hole can be inserted. When a pressure of approximately 50 kg/cm 2 is applied from a direction to deform a part of the metal pin so as to sandwich the ceramic substrate between the two principal surfaces of the ceramic substrate, so-called caulking, the metal pin deforms. The pressure is blocked by the rigid metal layer and does not act on the ceramic substrate, making it possible to securely attach the metal pin to the ceramic substrate without causing any chipping of the ceramic substrate.
よつて、本考案のセラミツク基板と金属ピンの
取着構造は外部リードピンが多数取着されて成る
セラミツク半導体パツケージやセラミツク電気回
路配線基板等の外部リードピンの取着構造に極め
て有用である。 Therefore, the ceramic substrate and metal pin attachment structure of the present invention is extremely useful for external lead pin attachment structures such as ceramic semiconductor packages and ceramic electric circuit wiring boards in which a large number of external lead pins are attached.
第１図は本考案のセラミツク基板と金属ピンの
取着構造の一実施例を示す断面図、第２図は従来
のセラミツク基板と金属ピンの取着構造を示す断
面図である。
１，１１……セラミツク基板、３，１３……貫
通孔、４，１４……金属ピン、５……剛性金属
層、Ａ，Ｂ……角部。
FIG. 1 is a cross-sectional view showing an embodiment of the ceramic substrate and metal pin attachment structure of the present invention, and FIG. 2 is a cross-sectional view showing a conventional ceramic substrate and metal pin attachment structure. 1, 11... Ceramic substrate, 3, 13... Through hole, 4, 14... Metal pin, 5... Rigid metal layer, A, B... Corner.
Claims (1)
挿通させるとともに該金属ピンの一部をセラミツ
ク基板を挟持するよう変形させることによつて金
属ピンをセラミツク基板に取着して成るセラミツ
ク基板と金属ピンの取着構造において、前記少な
くともセラミツク基板の主面と貫通孔内壁とで形
成される角部がヤング率1.5×104Kg／mm2以上の剛
性金属層により覆設されていることを特徴とする
セラミツク基板と金属ピンの取着構造。 A ceramic substrate and a metal pin, in which the metal pin is attached to a ceramic substrate by inserting the metal pin into a through hole provided in the ceramic substrate and deforming a part of the metal pin so as to sandwich the ceramic substrate. In the mounting structure, at least the corner formed by the main surface of the ceramic substrate and the inner wall of the through hole is covered with a rigid metal layer having a Young's modulus of 1.5×10 4 Kg/mm 2 or more. Mounting structure of ceramic substrate and metal pins.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985150203U JPH031891Y2 (en) | 1985-09-30 | 1985-09-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985150203U JPH031891Y2 (en) | 1985-09-30 | 1985-09-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6258864U JPS6258864U (en) | 1987-04-11 |
| JPH031891Y2 true JPH031891Y2 (en) | 1991-01-21 |
Family
ID=31066130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985150203U Expired JPH031891Y2 (en) | 1985-09-30 | 1985-09-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH031891Y2 (en) |
-
1985
- 1985-09-30 JP JP1985150203U patent/JPH031891Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258864U (en) | 1987-04-11 |
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