JPH03193131A - Vacuum treatment apparatus having ionizing mechanism - Google Patents

Vacuum treatment apparatus having ionizing mechanism

Info

Publication number
JPH03193131A
JPH03193131A JP33569789A JP33569789A JPH03193131A JP H03193131 A JPH03193131 A JP H03193131A JP 33569789 A JP33569789 A JP 33569789A JP 33569789 A JP33569789 A JP 33569789A JP H03193131 A JPH03193131 A JP H03193131A
Authority
JP
Japan
Prior art keywords
gas
vacuum
chamber
discharge
dust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP33569789A
Other languages
Japanese (ja)
Inventor
Nakahiko Yamaguchi
山口 中彦
Yasuaki Yamane
山根 康朗
Naoki Kato
加藤 直規
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP33569789A priority Critical patent/JPH03193131A/en
Publication of JPH03193131A publication Critical patent/JPH03193131A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To reduce the amount of the dust flying up within a vacuum chamber bonded to the surface of a material to be treated when substituent gas or vacuum releasing gas is introduced by providing a discharge chamber in a gas introducing apparatus and ionizing non-combustible gas in the discharge chamber. CONSTITUTION:Non-combustible gas is used as substituent gas or vacuum releasing gas. A gas introducing apparatus 5, the vacuum chamber 15 communicating with the introducing apparatus 5 through a pressure reducing valve 13 and the exhaust apparatus 18 connected to the vacuum chamber 15 are provided. A discharge chamber 8 is provided in the introducing apparatus 5 and the non- combustible gas is ionized in the discharge chamber 8. As a result, the adhesion amount of the dust flying up in the vacuum chamber when the substituent gas or vacuum releasing gas is introduced to the surface of a material to be treated is reduced.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は、真空環境で行う加工処理、成膜処理熱処理、
結晶成長等の工程において、被処理物体の搬入・搬出時
、処理時等に被処理物体に付着するサブミクロン−数ミ
クロン程度の極めて小さなダスト類を1/cm2以下に
抑制しなければならない作業環境、例えば半導体製造環
境に使用する真空処理装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to processing performed in a vacuum environment, film formation heat treatment,
A work environment where extremely small dust of submicron to several micron size that adheres to the object to be processed during loading/unloading, processing, etc. in processes such as crystal growth must be suppressed to 1/cm2 or less. , for example, relates to a vacuum processing apparatus used in a semiconductor manufacturing environment.

(従来の技術) 従来のこの種の装置では、真空室の気体を置換する時、
或いは真空解除用気体を真空室に導入する時に、真空室
内に乱流が発生するために、真空室内に堆積、或いは付
着していたダスト類が舞い上がり、一部のダスト類が被
処理体に付着する欠点があった。
(Prior art) In this type of conventional equipment, when replacing the gas in the vacuum chamber,
Alternatively, when the vacuum release gas is introduced into the vacuum chamber, turbulent flow occurs in the vacuum chamber, causing dust that has accumulated or adhered to the vacuum chamber to fly up, and some of the dust to be attached to the object to be processed. There was a drawback.

被処理体へのダスト類の付着を低減するため、■ 被処
理体の表側を下向きに設置する、■ 真空室内の定期的
な研摩・清掃の励行により真空系のダスト類を減らす、 ■ 時間をかけて気体を置換する、或いは真空解除する
ことにより、乱流の発生を押さえる、等の方法が採られ
てきた。
To reduce the amount of dust adhering to the object to be processed, ■ Install the object to be processed with the front side facing downward, ■ Reduce the amount of dust in the vacuum system by regularly polishing and cleaning the vacuum chamber, and ■ Save time. Methods have been taken to suppress the occurrence of turbulent flow by replacing the gas by applying pressure or releasing the vacuum.

本発明者らの半導体製造の経験の例では、被処理体とし
てStウェハを用い、当該ウェハに金属膜を堆積する場
合、■、■の対策を施した膜付装置で気体の置換速度を
10リットル/分から0.1リットル/分と遅くするこ
とにより、当該ウェハに付着したダスト類を100/c
m2から1/cm2 と低減することができた。しかし
、さらにウェハ表面のダスl−[を減らすためには、ウ
ェハ表面のダスト類の付着力がウェハとの静電的な結合
と考えられることから、これ以上置換速度や真空解除速
度を遅くしても処理能力が低下するだけでダスト類を下
げることは困難と考えられる。
In an example of the inventors' experience in semiconductor manufacturing, when a St wafer is used as an object to be processed and a metal film is deposited on the wafer, a gas replacement rate of 10 By reducing the speed from liter/min to 0.1 liter/min, dust attached to the wafer can be reduced to 100/cm.
It was possible to reduce it from m2 to 1/cm2. However, in order to further reduce the dust l- However, it would be difficult to reduce the amount of dust as it would only reduce the processing capacity.

(発明が解決しようとする課題) 本発明は上記の欠点を改善するために提案されたもので
、その目的は、置換気体導入時や真空解除気体導入時に
、真空室内部で舞い上がるダスト類の被処理体表面への
付着量を低減させた真空処理装置を提供することにある
(Problems to be Solved by the Invention) The present invention was proposed in order to improve the above-mentioned drawbacks, and its purpose is to cover the dust that flies up inside the vacuum chamber when introducing replacement gas or introducing vacuum release gas. An object of the present invention is to provide a vacuum processing apparatus in which the amount of adhesion to the surface of a processing object is reduced.

(課題を解決するための手段) 上記の目的を達成するため、本発明は置換気体あるいは
真空解除用気体として、非可燃性気体を使用し、前記の
気体の導入装置と、前記気体の導入装置と減圧弁を介し
て連結されている真空室と、前記真空室に接続されてい
る排気装置とを備え、前記の気体の導入装置内に放電室
を設け、前記放電室によって前記の非可燃性気体をイオ
ン化することを特徴とするイオン化機構を有する真空処
理装置を発明の要旨とするものである。
(Means for Solving the Problems) In order to achieve the above object, the present invention uses a non-flammable gas as a replacement gas or a vacuum release gas, and includes the above-mentioned gas introduction device and the above-mentioned gas introduction device. a vacuum chamber connected via a pressure reducing valve; and an exhaust device connected to the vacuum chamber; a discharge chamber is provided in the gas introduction device; The gist of the invention is a vacuum processing apparatus having an ionization mechanism that ionizes gas.

(作用) 本発明は真空室に送り込む置換気体類や空気等の非可燃
性気体を予め放電室に送り込み、概略大気圧〜10〜’
Torrの圧力下でコロナ放電、あるいは自己放電を生
じせしめ、当該気体類をイオン化し、当該気体類を真空
室内に導入することにより、当該気体類がウェハ表面に
吹き付けられ、被処理物体の表面に静電的に付着してい
るダスト類を電気的に中性化し、よって、被処理物体表
面のダスト類の付着を低減させる作用を有するものであ
る。
(Function) In the present invention, a non-flammable gas such as a replacement gas or air to be sent into the vacuum chamber is sent into the discharge chamber in advance, and the pressure is approximately atmospheric pressure ~10~'
By causing corona discharge or self-discharge under the pressure of Torr, ionizing the gases, and introducing the gases into the vacuum chamber, the gases are blown onto the wafer surface and onto the surface of the object to be processed. It has the effect of electrically neutralizing the electrostatically attached dust, thereby reducing the adhesion of dust on the surface of the object to be treated.

従って本発明は、従来の技術である電気的に中性な気体
を使用していた真空装置とは、イオン化した気体を使用
する点で大きく異なるものである。
Therefore, the present invention differs greatly from conventional vacuum devices that use electrically neutral gas in that it uses ionized gas.

(実施例) 次に本発明の実施例について説明する。なお、実施例は
−・つの例示であって、本発明の精神を逸脱しない範囲
で、種々の変更があるいは改良を行いうることは言うま
でもない。
(Example) Next, an example of the present invention will be described. It should be noted that the embodiments are merely illustrative, and it goes without saying that various changes and improvements can be made without departing from the spirit of the present invention.

第1図(a)〜(C)は本発明の原理を示す。1(a)-(C) illustrate the principle of the present invention.

図において、1はイオン化された気体の流れ、2は被処
理物体、3は被処理物体表面に付着したダスト類、4は
イオン化された気体により吹き飛ばされたダスト類であ
る。ここで、士印はプラス電位に、−印はマイナス電位
に帯電している状態を示し、Nは電位的に中性の状態を
示す。
In the figure, 1 is a flow of ionized gas, 2 is an object to be processed, 3 is dust attached to the surface of the object to be processed, and 4 is dust blown off by the ionized gas. Here, the mark indicates a state of being charged with a positive potential, the - mark indicates a state of being charged with a negative potential, and N indicates a state of being electrically neutral.

説明の便宜上、被処理物体がマイナス、ダスト類がプラ
スに帯電している場合を例に説明するが、逆に帯電して
いる場合、すなわち、被処理物体がプラス、ダスト類が
マイナスに帯電している場合も状況は同じと考えられる
ので、説明を省略する。
For convenience of explanation, we will use an example where the object to be processed is charged negatively and the dust is charged positively, but if the object is charged oppositely, that is, the object to be processed is charged positively and the dust is charged negatively. Since the situation is considered to be the same even if

第1図(a)で、被処理物体2と静電的付着したダスト
類3にイオン化された気体1を吹きつけると、マイナス
にイオン化された気体の分子はダスト類に衝突するため
、第1図(b)に示すように、ダスト類は電位を失う。
In FIG. 1(a), when the ionized gas 1 is blown onto the object 2 to be treated and the dust 3 electrostatically attached, the negatively ionized gas molecules collide with the dust. As shown in Figure (b), the dust loses potential.

このために、被処理物体とダストaの静電結合力が弱ま
る。持続して吹きつけられる気体により、第1図(C)
に示すように、ダスト類は吹き飛ばされる。
For this reason, the electrostatic bonding force between the object to be processed and the dust a is weakened. Figure 1 (C)
As shown, the dust is blown away.

ところで、真空雰囲気で気体をイオン化する場合、気体
の圧を10−’Torr以下の高真空にすると、平均自
由工程は概略メートルのオーダーになり、電極間の距離
と同程度になる。このため、10−’Torr以上の低
真空の放電と異なり、気体分子の電離が殆ど生じなくな
る(放電ハンドブック、 p、21).電気学会)。従
って、気体の圧が10−’Torr以上の低真空で放電
を行わせることが本発明の重要なポイントである。
By the way, when gas is ionized in a vacuum atmosphere, if the pressure of the gas is set to a high vacuum of 10-' Torr or less, the mean free path is approximately on the order of meters, which is about the same as the distance between the electrodes. For this reason, unlike a low-vacuum discharge of 10-'Torr or more, almost no ionization of gas molecules occurs (Discharge Handbook, p. 21). Institute of Electrical Engineers of Japan). Therefore, an important point of the present invention is to perform the discharge in a low vacuum where the gas pressure is 10-'Torr or more.

第2図は本発明による装置の概念図を示す。FIG. 2 shows a conceptual diagram of the device according to the invention.

図において、5はイオン化気体の導入装置でこの内部に
は6の真空制御装置、7の放電用電源、8の放電室、9
の放電装置、10の可燃性気体検知装置、1)の真空計
(A) 、12の減圧弁(A) 、13の減圧弁(B)
、14の排気装置(A)が収容され、また、】5の真空
室には16の真空計(B)と17の減圧弁(C)が連結
され、18は排気装置で前記の減圧弁(C)17に連結
されている。
In the figure, 5 is an ionized gas introducing device, and inside this is a vacuum control device 6, a discharge power source 7, a discharge chamber 8, and a discharge chamber 9.
discharge device, 10 combustible gas detection devices, 1) vacuum gauge (A), 12 pressure reducing valves (A), 13 pressure reducing valves (B)
, 14 exhaust devices (A) are housed, and 16 vacuum gauges (B) and 17 pressure reducing valves (C) are connected to the vacuum chamber ]5, and 18 is an exhaust device that accommodates the pressure reducing valve ( C) connected to 17.

ここで、イオン化気体の導入装置5は減圧弁(B)13
を介して真空室15と連結されている。また、この真空
室15の圧力は減圧弁(C)17を介して排気装置(B
)18により高真空に保たれ、真空計(B)16でモニ
タされている。
Here, the ionized gas introducing device 5 is a pressure reducing valve (B) 13.
It is connected to the vacuum chamber 15 via. Moreover, the pressure in this vacuum chamber 15 is controlled by an exhaust device (B) via a pressure reducing valve (C) 17.
) 18 and monitored by a vacuum gauge (B) 16.

放電用電源7.可燃性気体検知装置10.真空計(A)
LL及び真空計(B)16のデータは真空制御装置6に
送られ、減圧弁(A)12.減圧弁(B)13、排気装
置(A)14.排気装置(B)18は夫々真空制御装置
6によって管理される。
Discharge power supply7. Flammable gas detection device 10. Vacuum gauge (A)
The data of LL and vacuum gauge (B) 16 are sent to vacuum control device 6, and pressure reducing valve (A) 12. Pressure reducing valve (B) 13, exhaust device (A) 14. The exhaust devices (B) 18 are each managed by a vacuum control device 6.

一般の真空装置の場合、気体系の配管は複数の置換気体
系の配管と単一・又は複数の真空解除系の配管で構成さ
れている。このような装置に本発明を導入する場合はイ
オン化気体の導入装置を各気体系に一台ずつ設置する。
In the case of a general vacuum device, gas system piping is composed of a plurality of replacement gas system piping and one or more vacuum release system piping. When the present invention is introduced into such an apparatus, one ionized gas introduction device is installed for each gas system.

但し、真空制御装置には多チヤネル機能を持たせ、複数
の系を一台の真空制御装置で管理することも可能である
。ところで、電離現象の伴う安定な放電は不平等電界中
のコロナ放電と自己放電とが知られている。本発明は両
方の放電に対して適用可能である。動作原理は変わらな
いのでコロナ放電を例にとり説明する。
However, it is also possible to provide the vacuum control device with a multi-channel function and manage multiple systems with one vacuum control device. Incidentally, stable discharge accompanied by an ionization phenomenon is known as corona discharge in an uneven electric field and self-discharge. The present invention is applicable to both types of discharge. Since the operating principle remains the same, we will explain this using corona discharge as an example.

コロナ放電の方が、気体への電離作用が強いので、帯電
したダストaの除電効率が高い利点がある。
Since corona discharge has a stronger ionizing effect on gas, it has the advantage of being more efficient in removing the charged dust a.

一方、自己放電の場合は放電用電源7を省略でき、制御
が簡略化できる。
On the other hand, in the case of self-discharge, the discharge power source 7 can be omitted, and control can be simplified.

一連の操作の内、本発明に関連する操作、即ち、気体導
入時の操作に限定して説明する。これ以外の操作では減
圧弁(A)12.減圧弁(B)13が閉じられていて、
通常の真空装置の操作と変わらないので省略する。
Among the series of operations, the explanation will be limited to operations related to the present invention, that is, operations during gas introduction. For other operations, pressure reducing valve (A) 12. The pressure reducing valve (B) 13 is closed,
Since the operation is the same as that of a normal vacuum device, it will be omitted.

また、−船釣には、先に述べたように、−台の真空装置
に置換気体類や真空解除等のため複数の配管が接続され
ており、個々の配管にイオン化気体の導入装置を接続す
るため、複数台必要となるが、説明の重複を避けるため
、1台で代表した。
In addition, as mentioned earlier, when fishing on a boat, multiple pipes are connected to the vacuum device on the stand for replacing gases, releasing the vacuum, etc., and an ionized gas introduction device is connected to each pipe. Therefore, multiple units are required, but to avoid duplication of explanation, we have chosen one unit as a representative.

気体導入時の真空室15の真空度は通常10−’Tor
r以下の高真空に保たれているので、放電で直接置換気
体等をイオン化することは難しい。このため、真空室1
5の前段に放電室8を設け、且つ放電室の真空度を制御
するための真空制御装置6を設けた。
The degree of vacuum in the vacuum chamber 15 when introducing gas is usually 10-'Tor.
Since the vacuum is maintained at a high vacuum below r, it is difficult to directly ionize the replacement gas etc. by electric discharge. For this reason, vacuum chamber 1
A discharge chamber 8 was provided at the front stage of the discharge chamber 5, and a vacuum control device 6 was provided for controlling the degree of vacuum in the discharge chamber.

放電室8と真空室15の真空度は、それぞれ、真空計(
A) 1).真空計(B)16で監視され、真空制御装
W6により減圧弁(A)12.減圧弁(B)13゜排気
装W14を制御する。真空系内に可燃性気体が混入した
時は、ただちに可燃性気体検知装置1oが作動し、放電
を中止する。
The degree of vacuum in the discharge chamber 8 and vacuum chamber 15 can be determined using a vacuum gauge (
A) 1). It is monitored by the vacuum gauge (B) 16, and the pressure reducing valve (A) 12. Pressure reducing valve (B) 13° controls exhaust system W14. When flammable gas enters the vacuum system, the flammable gas detection device 1o is activated immediately to stop the discharge.

このようにして、 ■真空室15の真空度が10− ’Torr以下の高真
空では、放電室の真空度は概ね10−’Torr、■真
空室15の真空度が10− ’Torr以上の低真空で
は、放電室の真空度は真空室の真空度と同じ程度、但し
真空室より高圧、 に保ち、放電用電源7を起動し、放電室内の気体をイオ
ン化する。当該気体は減圧弁(B)13を経由して真空
室15に供給される。
In this way, ■ When the degree of vacuum in the vacuum chamber 15 is a high vacuum of 10-' Torr or less, the degree of vacuum in the discharge chamber is approximately 10-'Torr; In a vacuum, the degree of vacuum in the discharge chamber is maintained at the same level as the degree of vacuum in the vacuum chamber, but at a higher pressure than that in the vacuum chamber, and the discharge power source 7 is activated to ionize the gas in the discharge chamber. The gas is supplied to the vacuum chamber 15 via the pressure reducing valve (B) 13.

第3図に放電室の真空度と真空室の真空度との関係を示
す。
FIG. 3 shows the relationship between the degree of vacuum in the discharge chamber and the degree of vacuum in the vacuum chamber.

第4図は放電室8(第1図)内に設置されたコロナ放電
用電極の実施例で同心円柱状電極の例である。この実施
例による被処理物の表面のダスト類の付着量と従来技術
によるダスト[の付着量を比較したところ、 本発明   0.01〜0.05/cmz従来例   
1〜3/cm2 の結果を得た。ここで、被処理物体にtC製造用のSi
ウェハを使用し、被処理物体への気体の吹きつけの持続
時間は20秒であった。本発明により被処理物体へのダ
スト類の付着量を約1 / 100に低減することがで
きた。
FIG. 4 shows an example of a corona discharge electrode installed in the discharge chamber 8 (FIG. 1), which is an example of a concentric cylindrical electrode. Comparing the amount of dust attached to the surface of the object to be treated according to this example and the amount of dust attached according to the conventional technology, the present invention 0.01 to 0.05/cmz Conventional example
A result of 1 to 3/cm2 was obtained. Here, the object to be processed is Si for tC production.
A wafer was used, and the duration of blowing the gas onto the object to be processed was 20 seconds. According to the present invention, the amount of dust adhering to the object to be treated can be reduced to about 1/100.

第5図は放電室内に設置されたコロナ放電用電極の実施
例で針対平板電極の例である。
FIG. 5 is an example of a corona discharge electrode installed in the discharge chamber, and is an example of a needle-to-plate electrode.

第6図は放電室内に設置されたコロナ放電用電極の実施
例で針対針電極の例である。
FIG. 6 is an example of a corona discharge electrode installed in the discharge chamber, and is an example of a needle-to-needle electrode.

(発明の効果) 斜上のように本発明によれば、置換気体あるいは真空解
除用気体として、非可燃性気体を使用し、0 前記の気体の導入装置と、前記気体の導入装置と減圧弁
を介して連結されている真空室と、前記真空室に接続さ
れている排気装置とを備え、前記の気体の導入装置内に
放電室を設け、前記放電室によって前記の非可燃性気体
をイオン化することによって、被処理体に付着するダス
ト類を大幅に減少することができる効果を有する。また
、本発明は放電室が真空室の処理の内容とは独立してお
り、非可燃性気体に広く適用できることから、各種の真
空処理装置、即ち、 ■真空焼鈍装置、ベーク炉、等 ■真空スパッタ装置、真空薄着装置、ケミカルベーパー
デイポジット装置、等の膜付装置■反応性イオンエツチ
ング装置、ミリング装置、等の加工装置、等 ■イオン注入装置、等 ■分子線結晶成長装置、気相成長装置、液晶成長装置等
の結晶成長装置 ■灰化装置、等 ■プラズマ表面改質装置、等 1 ■グローブボックスの置換気体への適用、各種真空保管
装置、等 ■その他の真空処理機器類 に広く適用できるものである。
(Effects of the Invention) As mentioned above, according to the present invention, a non-flammable gas is used as the replacement gas or the vacuum release gas, and the above-mentioned gas introduction device, the gas introduction device, and the pressure reducing valve are provided. and an exhaust device connected to the vacuum chamber, a discharge chamber is provided in the gas introduction device, and the non-flammable gas is ionized by the discharge chamber. This has the effect of significantly reducing dust adhering to the object to be processed. Furthermore, since the discharge chamber is independent of the processing contents of the vacuum chamber, and the present invention can be widely applied to non-flammable gases, the present invention can be applied to various vacuum processing apparatuses, such as ■vacuum annealing equipment, bake ovens, etc.■vacuum Film deposition equipment such as sputtering equipment, vacuum thin deposition equipment, chemical vapor deposition equipment, etc. ■ Processing equipment such as reactive ion etching equipment, milling equipment, etc. ■ Ion implantation equipment, etc. ■ Molecular beam crystal growth equipment, vapor phase growth equipment, crystal growth equipment such as liquid crystal growth equipment ■ Ashing equipment, etc. ■ Plasma surface modification equipment, etc. 1 ■ Application to replacement gas in glove boxes, various vacuum storage devices, etc. ■ Widely used in other vacuum processing equipment It is applicable.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(C)は本発明の原理を示す図、第2図
は本発明による装置の概念図、第3図は放電室の真空度
と真空室の真空度との関係を示す図、第4図は放電室内
に設置されたコロナ放電用電極の実施例で同心円柱状電
極の例、第5図は放電室内に設置されたコロナ放電用電
極の実施例で針対平板電極の例、第6図は放電室内に設
置されたコロナ放電用電極の実施例で針対針電極の例を
示す。 1・・・イオン化された気体の流れ、 2・・・被処理物体 3・・・被処理物体表面に付着したダスト類4・・・気
体により吹き飛ばされたダスト類5・・・イオン化気体
の導入装置 6・・・真空制御装置 7・・・放電用電源 2 8 ・ ・ 10・ ・ 1)・ 12・ ・ 13・ ・ I4・ ・ 15・ ・ 16・ ・ 17・ ・ 1日 ・放電室 放電装置 ・可燃性気体検知装置 ・真空計A ・減圧弁A 減圧弁B ・排気装置A ・真空室 ・真空計B ・減圧弁C ・排気装置B 3
Figures 1 (a) to (C) are diagrams showing the principle of the present invention, Figure 2 is a conceptual diagram of the device according to the present invention, and Figure 3 is a diagram showing the relationship between the degree of vacuum in the discharge chamber and the degree of vacuum in the vacuum chamber. Figure 4 is an example of a corona discharge electrode installed inside the discharge chamber, and is an example of a concentric cylindrical electrode, and Figure 5 is an example of a corona discharge electrode installed inside the discharge chamber, which is a needle-to-plane electrode. For example, FIG. 6 shows an example of a needle-to-needle electrode in an embodiment of a corona discharge electrode installed in a discharge chamber. 1...Flow of ionized gas, 2...Object to be treated 3...Dusts attached to the surface of the object to be treated 4...Dusts blown away by gas 5...Introduction of ionized gas Device 6... Vacuum control device 7... Power source for discharge 2 8 ・ ・ 10 ・ 1) ・ 12 ・ ・ 13 ・ ・ I4 ・ 15 ・ ・ 16 ・ 17 ・ 1 day・Discharge chamber discharge device・Flammable gas detection device ・Vacuum gauge A ・Pressure reducing valve A Pressure reducing valve B ・Exhaust device A ・Vacuum chamber ・Vacuum gauge B ・Pressure reducing valve C ・Exhaust device B 3

Claims (2)

【特許請求の範囲】[Claims] (1)置換気体あるいは真空解除用気体として、非可燃
性気体を使用し、前記の気体の導入装置と、前記気体の
導入装置と減圧弁を介して連結されている真空室と、前
記真空室に接続されている排気装置とを備え、前記の気
体の導入装置内に放電室を設け、前記放電室によって前
記の非可燃性気体をイオン化することを特徴とするイオ
ン化機構を有する真空処理装置。
(1) A non-flammable gas is used as the replacement gas or the vacuum release gas, and the gas introduction device, the vacuum chamber connected to the gas introduction device via a pressure reducing valve, and the vacuum chamber A vacuum processing apparatus having an ionization mechanism, comprising: an exhaust device connected to the gas introduction device; a discharge chamber is provided in the gas introduction device; and the non-flammable gas is ionized by the discharge chamber.
(2)導入装置の気体圧を真空室の気体圧より高くし、
且つ概略大気圧〜10^−^4Torrの間に保ち、コ
ロナ放電、又は自己放電により非可燃性気体をイオン化
することを特徴とする請求項1記載のイオン化機構を有
する真空処理装置。
(2) Make the gas pressure of the introduction device higher than the gas pressure of the vacuum chamber,
2. A vacuum processing apparatus having an ionization mechanism according to claim 1, wherein the non-flammable gas is ionized by corona discharge or self-discharge while maintaining the pressure between approximately atmospheric pressure and 10^-^4 Torr.
JP33569789A 1989-12-25 1989-12-25 Vacuum treatment apparatus having ionizing mechanism Pending JPH03193131A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33569789A JPH03193131A (en) 1989-12-25 1989-12-25 Vacuum treatment apparatus having ionizing mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33569789A JPH03193131A (en) 1989-12-25 1989-12-25 Vacuum treatment apparatus having ionizing mechanism

Publications (1)

Publication Number Publication Date
JPH03193131A true JPH03193131A (en) 1991-08-22

Family

ID=18291477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33569789A Pending JPH03193131A (en) 1989-12-25 1989-12-25 Vacuum treatment apparatus having ionizing mechanism

Country Status (1)

Country Link
JP (1) JPH03193131A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141455A (en) * 2008-12-10 2010-06-24 Audio Technica Corp Headphone

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226756A (en) * 1985-07-26 1987-02-04 Mitsubishi Electric Corp Device for producing semiconductors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226756A (en) * 1985-07-26 1987-02-04 Mitsubishi Electric Corp Device for producing semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010141455A (en) * 2008-12-10 2010-06-24 Audio Technica Corp Headphone

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