JPH03196676A - Driving method of charge transfer device - Google Patents

Driving method of charge transfer device

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Publication number
JPH03196676A
JPH03196676A JP1336944A JP33694489A JPH03196676A JP H03196676 A JPH03196676 A JP H03196676A JP 1336944 A JP1336944 A JP 1336944A JP 33694489 A JP33694489 A JP 33694489A JP H03196676 A JPH03196676 A JP H03196676A
Authority
JP
Japan
Prior art keywords
transfer
charge
transferred
horizontal
period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1336944A
Other languages
Japanese (ja)
Other versions
JP2589391B2 (en
Inventor
Yasushi Watanabe
恭志 渡辺
Akihiko Nita
二田 昭彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
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Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP1336944A priority Critical patent/JP2589391B2/en
Publication of JPH03196676A publication Critical patent/JPH03196676A/en
Application granted granted Critical
Publication of JP2589391B2 publication Critical patent/JP2589391B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 「産業上の利用分野」 この発明は、固体撮像装置等に用いられる電荷転送素子
の駆動法、特に転送効率を高めることのできる駆動法に
関する。
DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a method of driving a charge transfer element used in a solid-state imaging device or the like, and particularly to a method of driving a charge transfer element that can improve transfer efficiency.

「従来の技術」 電荷結合素子(CCD)を代表とする電荷転送素子(C
TD)の例として、第2図に示す1次元イメージセンサ
や、第3図に示す2次元イメージセンサ等の固体撮像素
子、第4図に示すシリアル−パラレル−シリアル(SP
S)方式の遅延線などがある。
“Prior art” Charge transfer devices (CCDs), typically charge-coupled devices (CCDs)
Examples of TD) include solid-state imaging devices such as the one-dimensional image sensor shown in Figure 2, the two-dimensional image sensor shown in Figure 3, and the serial-parallel-serial (SP) shown in Figure 4.
S) type delay line, etc.

これら素子では、いずれの場合にも複数本の垂直転送部
3の48号電荷が水平転送部4へ転送された後、該水平
転送部4内を転送され、信号電荷検出部5から出カイ8
号として読み出される。
In these devices, in any case, charges No. 48 of the plurality of vertical transfer sections 3 are transferred to the horizontal transfer section 4, and then transferred within the horizontal transfer section 4, and then outputted from the signal charge detection section 5.
It is read out as a number.

第2図及び第3図において、lは光電変換部(斜線領域
として図示)、2はトランスファゲートである。
In FIGS. 2 and 3, 1 is a photoelectric conversion section (shown as a shaded area), and 2 is a transfer gate.

垂直転送部3から水平転送部4に43号1i荷を転送す
る場合の駆動方式について第5図を参照して説明する。
A driving method for transferring the No. 43 1i load from the vertical transfer section 3 to the horizontal transfer section 4 will be explained with reference to FIG.

なお、以下では、各転送部3.4としてCCDが使用さ
れ、垂直転送部3ば4相駆動、水平転送部4ば2相駆動
の場合について説明するが、他のCTDの場合あるいは
別の駆動相数の場合についても同様である。
In the following, a case will be explained in which a CCD is used as each transfer section 3.4, and the vertical transfer section 3 is 4-phase drive and the horizontal transfer section 4 is 2-phase drive. The same holds true for the number of phases.

第5図に従来の駆動方式の場合のタイミング図を示す。FIG. 5 shows a timing diagram for the conventional drive system.

また、第6図に垂直転送部3がら水平転送部4に至る電
荷転送領域の模式図を示す。
Further, FIG. 6 shows a schematic diagram of the charge transfer region from the vertical transfer section 3 to the horizontal transfer section 4.

ココテ、転送電極GVI、 GV2. GV3. GV
4. Gl、GD3には、第5図に示す転送りaツクφ
vl。
Kokote, transfer electrode GVI, GV2. GV3. GV
4. Gl and GD3 have transfer links φ shown in FIG.
vl.

φV2. φV3.φV4. φH1,φH2が印加さ
れる。
φV2. φV3. φV4. φH1 and φH2 are applied.

また、第6図において、転送電極GHI、 GD3の領
域内に設けられたハツチング部は転送の方向付けのため
のバリヤ領域である。
Further, in FIG. 6, the hatching portions provided in the areas of the transfer electrodes GHI and GD3 are barrier areas for directing the transfer.

ざて、第5図時点t1において垂直転送部3の最終ビッ
トを構成する転送電極GVI、 GVZ下の領域に蓄積
されていた信号電荷は、時点t2〜t9の間に転送電極
GV3. GV4のチャネル領域を経由して水平転送部
4の対応する転送部1firG旧直下へ転送される。
5, the signal charge accumulated in the area under the transfer electrodes GVI, GVZ constituting the final bit of the vertical transfer section 3 at time t1 in FIG. 5 is transferred to the transfer electrode GV3. The data is transferred to the corresponding transfer unit 1firG of the horizontal transfer unit 4 directly below the old one via the channel area of the GV4.

次のタイミングでは、転送電極GH1に蓄積されていた
信号電荷は時点tlo以降で水平方向に転送され、48
号電荷検出部5へと運ばれる。
At the next timing, the signal charges accumulated in the transfer electrode GH1 are transferred in the horizontal direction after time tlo, and 48
The signal charge detection section 5 carries the signal to the signal charge detection section 5.

このような水平転送において、第5図に示すように信号
電荷が垂直転送の最終段にあたる転送部1GV4からG
lへ運ばれる期間T1に比べ、水平転送の最初にあたる
転送電極GlがらGHl2へ運ばれる期間T2の方が^
かに短くなっている。
In such horizontal transfer, as shown in FIG.
The period T2 during which the transfer electrode Gl, which is the beginning of horizontal transfer, is transferred to GHl2 is longer than the period T1 during which the transfer electrode Gl is transferred to GHl2.
It's getting much shorter.

「発明が解決しようとする課題」 ところで、第7図は、第6図の具体例としてより詳細に
示した図である。
``Problems to be Solved by the Invention'' By the way, FIG. 7 is a diagram showing a more detailed example of FIG. 6.

第7図において、−点鎖線で囲まれた領域が活性領域で
、CCDの転送チャネルを形成する。また、破線は各転
送電極における下側電極、実線は上側電極を示し、水平
転送部4では上(+!1電極下のチャネル領域に転送の
方向付けのためのポテンシャルバリヤが形成きれている
In FIG. 7, the region surrounded by the dashed line is the active region, which forms the transfer channel of the CCD. Further, the broken line indicates the lower electrode of each transfer electrode, and the solid line indicates the upper electrode, and in the horizontal transfer section 4, a potential barrier for directing the transfer has been formed in the channel region under the upper (+!1) electrode.

また、各転送電極GVI、 GV2. GV3. GV
4. GHl、 Gl(21:は、第5図のクロックφ
Vl、 φv2゜φV3.φV4.φ旧、φH2が印加
される。
In addition, each transfer electrode GVI, GV2. GV3. GV
4. GHl, Gl (21: is the clock φ in FIG.
Vl, φv2゜φV3. φV4. φold and φH2 are applied.

第7図より明らかなように、2相駆動力式を採用した場
合、垂直転送部3i′[下に形成される垂直転送チャネ
ルが、水平転送部4直下に形成される水平転送チャネル
に合流する領域のチャネル輻WOは、転送りaツクφ旧
が印加される下側電極のチャネル輻W1より必然的に小
さくならざるを得ない。
As is clear from FIG. 7, when the two-phase driving force type is adopted, the vertical transfer channel formed below the vertical transfer section 3i' joins the horizontal transfer channel formed directly below the horizontal transfer section 4. The channel width WO of the region must necessarily be smaller than the channel width W1 of the lower electrode to which the transfer torque φ is applied.

第4図に示す従来の駆動タイミングの場合、(8号電荷
を直前の転送電極GVJ下から転送N極GHIの下側電
極下へ転送するには、チャネル輻WOが小ざい値であっ
ても、期間TIという相対的に長い時間をかけているた
め、チャネル輻WOが小ざいことに起因する転送劣化は
生じ難い。
In the case of the conventional drive timing shown in FIG. , period TI, which is a relatively long period of time, transmission deterioration due to small channel congestion WO is unlikely to occur.

しかしながら、転送1を極G旧用の下側N極下から次の
転送電極GH2の下側電極下へ転送する期間T2は、水
平転送部4から48号電荷検出部5へ読み出す時の1転
送段当り期間T3と同じであるため、期間T1に比べ非
常に短い。
However, the period T2 during which transfer 1 is transferred from below the lower N pole for the old pole G to below the lower electrode of the next transfer electrode GH2 is 1 transfer when reading from the horizontal transfer section 4 to the No. 48 charge detection section 5. Since it is the same as the per-stage period T3, it is much shorter than the period T1.

したがって、チャネル輻WOが狭くかつその長さLOが
チャネル輻WOに比べて大きい場合、水平転送直後に、
WOXLOの領域の信号電荷が一部取り残される現象を
招く。
Therefore, if the channel congestion WO is narrow and its length LO is larger than the channel congestion WO, immediately after horizontal transfer,
This causes a phenomenon in which some signal charges in the WOXLO region are left behind.

そして、この電荷取り残し量は各垂直転送チャネル間で
バラツキ易く、電荷取り残し量がバラツクと、例えば第
3図の2次元イメージセンサの場合では縦縞模様を生じ
て画像が劣化する。
The amount of remaining charge tends to vary among the vertical transfer channels, and if the amount of remaining charge varies, for example, in the case of the two-dimensional image sensor shown in FIG. 3, a vertical striped pattern is generated and the image is degraded.

そこで、この発明ではこのような課題を解決したもので
、水平転送部における電荷取り残しが発生しないような
駆動法を提案するものである。
Therefore, the present invention solves these problems and proposes a driving method that prevents charges from being left behind in the horizontal transfer section.

「課題を解決するための手段」 上述の課題を解決するため、この発明においては、複数
の垂直転送部と、該垂直転送部からの48号電荷を水平
方向に転送する水平転送部と、該水平転送部からの4g
号電荷を電圧ないし電流信号に変換し出力する信号電荷
検出部からなる電荷転送素子において、 信号電荷が垂直転送部における最終段の蓄積領域から垂
直転送部と交わる水平転送部の蓄積領域へ転送される期
間と、 上記水平転送部において当該蓄積領域から次段の蓄積領
域へ転送される期間とが共に、それ以降の水平方向に転
送される1転送段あたりの期間に比べ長く設定されてな
ることを特徴とするものである。
"Means for Solving the Problems" In order to solve the above-mentioned problems, the present invention includes a plurality of vertical transfer sections, a horizontal transfer section that horizontally transfers No. 48 charge from the vertical transfer sections, and a plurality of vertical transfer sections. 4g from horizontal transfer section
In a charge transfer element consisting of a signal charge detection section that converts a signal charge into a voltage or current signal and outputs it, the signal charge is transferred from the final stage accumulation region of the vertical transfer section to the accumulation region of the horizontal transfer section that intersects with the vertical transfer section. Both the period during which data is transferred from the storage area to the storage area at the next stage in the horizontal transfer section are set to be longer than the period for each subsequent horizontal transfer stage. It is characterized by:

「作 用」 48号電荷が垂直転送部3における最終段の蓄積領域か
ら垂直転送部3と交わる水平転送部4の蓄積領域へ転送
される期間と、水平転送部4において当該蓄積領域から
次段の蓄積領域へ転送される期間とが共に、それ以降の
水平方向に転送される1転送段あたりの期間に比べ長く
、例えば2倍以上に設定される。
"Function" The period during which charge No. 48 is transferred from the last stage accumulation region in the vertical transfer section 3 to the accumulation region of the horizontal transfer section 4 that intersects with the vertical transfer section 3, and the period during which charge No. 48 is transferred from the accumulation region in the next stage in the horizontal transfer section 4. The period during which the data is transferred to the storage area is set to be longer, for example, twice or more, than the period per one transfer stage during which the data is transferred in the horizontal direction thereafter.

そうすると、垂直転送部3に接するところの狭く長い蓄
積領域を有する水平転送領域から次段の水平転送領域へ
の転送期間が十分長く設定されているので、狭い転送領
域(LOXWO)があっても、この領域内の電荷を確実
に次段の転送領域に転送できる。そのため、この狭い転
送領域に転送蓄積された電荷の取り残しがない。
Then, since the transfer period from the horizontal transfer area having a narrow and long storage area in contact with the vertical transfer section 3 to the next horizontal transfer area is set to be sufficiently long, even if there is a narrow transfer area (LOXWO), Charges within this region can be reliably transferred to the next stage transfer region. Therefore, no charges transferred and accumulated in this narrow transfer region are left behind.

「実 施 例」 続いて、この発明に係る電荷転送素子の駆動法の一例を
、図面を参照して詳細に説明する。
"Example" Next, an example of a method for driving a charge transfer element according to the present invention will be described in detail with reference to the drawings.

第1図は、この発明による電荷転送素子の駆動法を示し
たタイミング図の例である。
FIG. 1 is an example of a timing diagram showing a method for driving a charge transfer device according to the present invention.

この発明でも、電荷転送素子の構成は、第2図、第3図
あるいは第4図に示した構成が採用され、ざらに詳細に
は第7図のような転送電極の構成及び転送チャネル構成
となされている。したがって、垂直転送部3から水平転
送部4に至る電荷転送領域は、第6図及び第7図と同じ
である。
In this invention as well, the structure of the charge transfer element is as shown in FIG. 2, 3, or 4, and more specifically, the structure of the transfer electrode and the transfer channel as shown in FIG. being done. Therefore, the charge transfer region from the vertical transfer section 3 to the horizontal transfer section 4 is the same as in FIGS. 6 and 7.

ざて、第1図において、垂直転送部3における最終ビッ
トの転送電極GV1. GV2領域に蓄積していた信号
電荷は、時点t2〜t9の間に、転送電極C1V3. 
GV4領域を経由して水平転送部4の転送電極G旧直下
に転送される。
In FIG. 1, the final bit transfer electrodes GV1. The signal charges accumulated in the GV2 region are transferred to the transfer electrodes C1V3.
The signal is transferred directly below the old transfer electrode G of the horizontal transfer section 4 via the GV4 area.

次に、転送電極GHIに蓄積した信号電荷は時点tlO
以降で水平方向に転送きれ、そして信号電荷検出部5へ
運ばれる。
Next, the signal charge accumulated in the transfer electrode GHI is transferred to the time tlO
Thereafter, the signal is completely transferred in the horizontal direction and is then transported to the signal charge detection section 5.

この発明においては、第1図に示すように信号電荷が水
平転送の最初にあたる転送電極G旧からGH2へ運ばれ
る期間T2は、その直前の垂直転送の最終にあたる転送
′R極GV4からG旧へ運ばれる期間T1と同程度とな
るように、水平転送部4に印加される水平転送りロック
φ旧、φN2の転送タイミングが設定される。
In this invention, as shown in FIG. 1, the period T2 in which signal charges are carried from the transfer electrode G old, which is the beginning of horizontal transfer, to GH2, is transferred from the transfer electrode 'R' GV4 to G old, which is the last of the immediately preceding vertical transfer. The transfer timings of the horizontal transfer locks φold and φN2 applied to the horizontal transfer unit 4 are set to be approximately the same as the transfer period T1.

この期間T2は、後述するように信号電荷検出部5の方
向に転送される1転送段当りの期間T3に比べ十分長く
、本例では2倍以上に選定されている。
This period T2 is sufficiently longer than the period T3 per one transfer stage during which the signal charge is transferred in the direction of the signal charge detection unit 5, as will be described later, and is selected to be more than twice as long in this example.

したがって、転送電極G旧を構成する一方の電極(転送
りロックφ旧が印加される下側電tり下から、転送電極
G)12を構成する一方の電極(転送りロックφH2が
印加される下側電極)下へ水平方向に信号電荷が最初に
転送される期間T2は、その直前の転送電極GV4領域
下から転送電極G’H1を構成する一方の電極(転送り
ロックφH1が印加される下側電極)下へ転送される期
間T1と同程度に長くなる。
Therefore, one electrode constituting the transfer electrode G old (transfer electrode G from the bottom, to which the transfer lock φ old is applied) one electrode (transfer lock φH2 is applied) forming the transfer electrode G old. During the period T2 in which signal charges are first transferred horizontally downward (lower electrode), one electrode (transfer lock φH1 is applied) forming the transfer electrode G'H1 from below the immediately previous transfer electrode GV4 region. (lower electrode) is as long as the period T1 during which the data is transferred downward.

その結果、転送1tfG旧を構成する一方の電極(転送
りロックφ旧が印加される下側電極)下に形成される、
狭く長い転送領域WOXLOの部分に蓄積された信号電
荷も完全に次段の転送電極直下に転送することができる
As a result, a
The signal charges accumulated in the narrow and long transfer region WOXLO can also be completely transferred directly under the transfer electrode of the next stage.

「発明の効果」 以上のように、この発明に係る電荷転送素子の駆動法に
よれば、複数本の垂直転送部からの信号電荷を水平転送
部へ転送する際、2段階に分は各段階とも十分転送期間
を保つことができるようにしたものである。
"Effects of the Invention" As described above, according to the method for driving a charge transfer element according to the present invention, when signal charges from a plurality of vertical transfer sections are transferred to a horizontal transfer section, each step is divided into two stages. Both are designed so that a sufficient transfer period can be maintained.

その結果、信号電荷の方向変換を伴う転送の場合でも、
転送処理がスムーズに行なわれ、電荷の取り残しがあっ
たり、たとえ電荷取り残しがあっても、各垂直転送部ご
との取り残し電荷量にバラツキを生じることがなくなる
As a result, even in the case of transfer that involves changing the direction of signal charges,
The transfer process is performed smoothly, and even if there is charge left behind, there will be no variation in the amount of leftover charge for each vertical transfer section.

したがって、この発明を例えば2次元イメージセンサに
適用する場合には、再現画像への縦縞模様の発生を軽減
若しくは除去できるから、画質を大幅に改善できる特徴
を有する。
Therefore, when the present invention is applied to, for example, a two-dimensional image sensor, the occurrence of vertical stripes in a reproduced image can be reduced or eliminated, so that the present invention has a feature that the image quality can be significantly improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はこの発明に係る電荷転送素子の駆動法の一例を
示すタイミング図、第2図は電荷転送素子を使用したラ
インセンサの構成図、第3図は同じく二次元センサの構
成図、第4図は同じく遅延線の構成図、第5図はこれら
に使用される駆動法のタイミング図、第6図は本発明が
適用される電荷転送素子の垂直転送部から水平転送部に
至る領域の模式図、第7図は第6図の一例として詳細に
示した平面パターン図である。 ・光電変換部 ・トランスファゲート ・垂直転送部 ・水平転送部 ・信号電荷検出部
FIG. 1 is a timing diagram showing an example of a method for driving a charge transfer device according to the present invention, FIG. 2 is a configuration diagram of a line sensor using a charge transfer device, FIG. 3 is a configuration diagram of a two-dimensional sensor, and FIG. Figure 4 is a block diagram of the delay line, Figure 5 is a timing diagram of the driving method used for these, and Figure 6 is a diagram of the area from the vertical transfer section to the horizontal transfer section of the charge transfer element to which the present invention is applied. The schematic diagram, FIG. 7, is a plan pattern diagram shown in detail as an example of FIG. 6.・Photoelectric conversion section ・Transfer gate ・Vertical transfer section ・Horizontal transfer section ・Signal charge detection section

Claims (1)

【特許請求の範囲】[Claims] (1)複数の垂直転送部と、該垂直転送部からの信号電
荷を水平方向に転送する水平転送部と、該水平転送部か
らの信号電荷を電圧ないし電流信号に変換し出力する信
号電荷検出部からなる電荷転送素子において、 信号電荷が垂直転送部における最終段の蓄積領域から垂
直転送部と交わる水平転送部の蓄積領域へ転送される期
間と、 上記水平転送部において当該蓄積領域から次段の蓄積領
域へ転送される期間とが共に、 それ以降の水平方向に転送される1転送段あたりの期間
に比べ長く設定されてなることを特徴とする電荷転送素
子の駆動法。
(1) A plurality of vertical transfer units, a horizontal transfer unit that horizontally transfers signal charges from the vertical transfer units, and a signal charge detection unit that converts the signal charges from the horizontal transfer units into voltage or current signals and outputs the signals. In a charge transfer element consisting of a charge transfer element, there is a period in which signal charges are transferred from a final stage storage region in the vertical transfer part to a storage region in a horizontal transfer part that intersects with the vertical transfer part, and a period in which signal charges are transferred from the storage region to the next stage in the horizontal transfer part. A method for driving a charge transfer element, characterized in that a period during which charge is transferred to an accumulation region is set to be longer than a period per transfer stage during which charge is transferred in the horizontal direction thereafter.
JP1336944A 1989-12-26 1989-12-26 Driving method of charge transfer device Expired - Fee Related JP2589391B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1336944A JP2589391B2 (en) 1989-12-26 1989-12-26 Driving method of charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1336944A JP2589391B2 (en) 1989-12-26 1989-12-26 Driving method of charge transfer device

Publications (2)

Publication Number Publication Date
JPH03196676A true JPH03196676A (en) 1991-08-28
JP2589391B2 JP2589391B2 (en) 1997-03-12

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JP1336944A Expired - Fee Related JP2589391B2 (en) 1989-12-26 1989-12-26 Driving method of charge transfer device

Country Status (1)

Country Link
JP (1) JP2589391B2 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913478A (en) * 1982-07-14 1984-01-24 Sony Corp Solid-state image pickup element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5913478A (en) * 1982-07-14 1984-01-24 Sony Corp Solid-state image pickup element

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JP2589391B2 (en) 1997-03-12

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