JPH03197648A - Lead frame material - Google Patents
Lead frame materialInfo
- Publication number
- JPH03197648A JPH03197648A JP33776789A JP33776789A JPH03197648A JP H03197648 A JPH03197648 A JP H03197648A JP 33776789 A JP33776789 A JP 33776789A JP 33776789 A JP33776789 A JP 33776789A JP H03197648 A JPH03197648 A JP H03197648A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- frame material
- content
- etching
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Heat Treatment Of Steel (AREA)
- Heat Treatment Of Sheet Steel (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は、エツチング加工性、封着性並びに成形加工
性に優れ、かつ強度の高いリードフレーム材に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a lead frame material having excellent etching processability, sealing property and molding processability, and high strength.
く背景技術とその課題〉
一般に、半導体機器類において(よリード材の特性もそ
の性能やコストに大きな影響を及ぼすことが知られてい
るが、このような半導体機器のリド材としては、従来か
ら、熱膨張係数が低く、かつ半導体素子やセラミックス
と比較的良好な接着性、封着性を示すFe−Ni系合金
が好んで使用されてきた。Background technology and its issues> In general, it is known that the characteristics of lead materials in semiconductor devices have a great influence on their performance and costs; Fe--Ni alloys have been favorably used, which have a low coefficient of thermal expansion and exhibit relatively good adhesion and sealing properties with semiconductor elements and ceramics.
しかし、例えば“LSIをプラスチックパッケージング
するプロセス”でのレジンモールド工程後の冷却過程や
プリント基板への実装時、更には使用環境において温度
サイクルを受けた時にはレジンとリード材との間に熱応
力がかがるのを避けることができないが、この応力が過
大になると、リード材が0従来より用いられてきたFe
−Ni系合金(例えば42%Ni−Fe合金)製のもの
”であってもパッケージにクラックが発生したり接着界
面が剥離したりして、パッケージの耐湿信頼性が低下す
ると言う問題を如何ともし難がった。つまり、モールド
レジンとリード材との熱膨張係数差に起因して生じた上
記微小クラックや剥離界面を通して外部から湿気が浸入
し、内部の半導体素子などを損傷する虞れがあったため
である。従って、LSIの耐湿信頼性を向上させるため
には、熱膨張係数がモールドレジンのそれに近いリード
フレーム材を使用する必要があった。However, for example, during the cooling process after the resin molding process in the "LSI plastic packaging process", during mounting on a printed circuit board, and even when subjected to temperature cycles in the usage environment, thermal stress is generated between the resin and the lead material. It is unavoidable that the lead material bends, but if this stress becomes excessive, the lead material
- Even if the package is made of Ni-based alloy (e.g. 42% Ni-Fe alloy), cracks may occur in the package or the adhesive interface may peel off, reducing the moisture resistance reliability of the package. In other words, there is a risk that moisture may infiltrate from the outside through the microcracks and peeling interfaces caused by the difference in thermal expansion coefficient between the mold resin and the lead material, damaging the internal semiconductor elements. Therefore, in order to improve the moisture resistance reliability of LSI, it was necessary to use a lead frame material whose coefficient of thermal expansion was close to that of mold resin.
一方、最近、上記タイプのLSIにおいても高集積化が
進められており、この傾向は使用するり一ドフレームの
多ビン化を更に推進する結果をもたらしているが、リー
ドフレームの多ビン化には素材厚の薄い方が有利である
ため、薄板化に対応できるように従来にも増して強度及
び硬度の高いリードフレーム材が要求されるようになっ
た。On the other hand, recently, the above-mentioned types of LSIs have been becoming more highly integrated, and this trend has resulted in further promotion of increasing the number of bins in lead frames used. Since it is advantageous to have a thinner material, lead frame materials with higher strength and hardness than ever before are required to accommodate thinner plates.
また、リードフレームが多ビン化されると必然的にピン
間隔が狭(なり、ピン自体の幅も小さくなるが、それに
対処するには精度の一層高いエツチング加工が必要とな
る。そのため、多ビン用に供されるリードフレーム材で
は、高強度や高硬度の他に、形成されるピン幅やピン間
隔の制御性につながる“エツチング加工性“が優れてい
ることも重要な要求特性となっていた。In addition, when a lead frame is made to have multiple bins, the pin spacing becomes narrow (and the width of the pin itself also becomes smaller), but in order to cope with this, even more precise etching processing is required. In addition to high strength and hardness, an important characteristic required for lead frame materials used in commercial applications is excellent etching workability, which allows control over the pin width and pin spacing. Ta.
ところで、Fe−Ni系合金製リードフレーム材のエツ
チング加工工程は、一般に、脱脂したリードフレーム材
の両面にフォトレジストを塗布しパターンを焼き付けて
現像した後、塩化第2鉄を主成分とするエツチング液で
エツチング加工し、その後前記レジストを除去する工程
から構成されているのが普通である。そして、この際の
エツチング性を決める要因としては“レジストの密着性
“や“エツチング速度”等が挙げられるが、これらの中
でも素材のエツチング速度が最も重要な因子となってお
り、エツチング速度が速くなるにつれてリードフレーム
材に形成されるピン幅、ピン間隔の制御性が容易化する
ことから、該エツチング速度によってエツチング加工性
の評価が概ね決定されてしまうと言っても過言ではなか
った。By the way, the etching process for lead frame materials made of Fe-Ni alloys is generally carried out by applying photoresist to both sides of a degreased lead frame material, baking a pattern, and developing it, followed by etching using ferric chloride as the main component. It usually consists of a step of etching with a liquid and then removing the resist. Factors that determine the etching performance at this time include "resist adhesion" and "etching speed," but among these, the etching speed of the material is the most important factor. It is no exaggeration to say that the evaluation of etching workability is largely determined by the etching speed, as it becomes easier to control the pin width and pin spacing formed on the lead frame material.
従って、半導体機器の集積度が上昇するに伴い、リード
フレーム材には優れた封着性や強度特性に加えて“より
速いエツチング速度(即ち良好なエツチング加工性)特
性0も求められてきた訳であるが、未だ十分に満足でき
るエツチング加工性2封着性1強度及び硬度、更には成
形加工性等を兼備した材料が見出されていないのが現状
であった。Therefore, as the degree of integration of semiconductor devices increases, lead frame materials are required to have "faster etching speed (that is, better etching processability)" properties in addition to excellent sealing and strength properties. However, the current situation is that no material has yet been found that has sufficiently satisfactory properties such as etching processability, sealing properties, strength and hardness, and even moldability.
このようなことから、本発明の目的は、強度及び硬度が
高く、しかも優れたエツチング加工性。For these reasons, the object of the present invention is to provide a material that has high strength and hardness, as well as excellent etching processability.
封着性並びに成形加工性をも併せ持つところの、集積度
の高い半導体機器への適用を意図した場合でも十分な性
能を発揮し得るリードフレーム材を工業的に安定して提
供し得る手段を確立することに置かれた。Established a means to industrially stably provide lead frame materials that have both sealing properties and moldability and can exhibit sufficient performance even when intended for application to highly integrated semiconductor devices. It was put to do.
く課題を解決するための手段〉
本発明者等は、上記目的を達成すべく、特にFe−Ni
−Cr系合金リードフレーム材が有する比較的高い強度
特性や低い熱膨張係数等に着目して、その強度を更に向
上させると共に熱膨張係数を半導体チップやモールドレ
ジンのそれに一段と近似させ、かつそのエツチング加工
性や成形加工性を顕著に改善することの可能性を探りな
がら研究を重ねた結果、次のような新しい知見を得るこ
とができた。即ち、
(a) Ni及びCrを主要成分としたFe合金にお
いて、そのC,St及びPの含有量を、更にはN含有量
をも特定の低い値に制限した場合には、該合金のエツチ
ング速度が顕著に改善されるようになる。Means for Solving the Problems> In order to achieve the above objects, the present inventors have specifically developed Fe-Ni.
-Focusing on the relatively high strength characteristics and low coefficient of thermal expansion of Cr-based alloy lead frame materials, we have further improved its strength, made the coefficient of thermal expansion more similar to that of semiconductor chips and mold resin, and developed the etching process. As a result of repeated research exploring the possibility of significantly improving workability and moldability, we were able to obtain the following new knowledge. That is, (a) In a Fe alloy whose main components are Ni and Cr, if the contents of C, St, and P, as well as the N content, are limited to specific low values, the etching of the alloy is Speed will be noticeably improved.
(′b)シかも、上記合金に幾つかの選ばれた特定の元
素の1種又は2種以上を所定の割合で含有させた場合に
は、リードフレーム材としての所要特性に格別な悪影響
を及ぼすことなく材料の強度を効果的に向上することが
できる上、Ni及びCr含を量の注意深い調整の下での
上記特定元素の添加は、その熱膨張係数をモールドレジ
ンや半導体チップのそれに近付けるのに極めて有効な手
段となる。('b) However, if the above-mentioned alloy contains one or more selected specific elements in a predetermined ratio, it may have a particularly adverse effect on the properties required as a lead frame material. In addition to being able to effectively improve the strength of the material without causing any adverse effects, the addition of the above-mentioned specific elements under careful control of the amounts of Ni and Cr brings its coefficient of thermal expansion closer to that of mold resin and semiconductor chips. It is an extremely effective means.
(C) また、上記合金材料においてもその結晶粒径
が強度及び成形加工性に少なからぬ影響を及ぼすが、該
結晶粒径を特定値以下に抑える手立てを講じることによ
ってリードフレームの多ピン化にとって好ましい“材料
強度の更なる向上”が期待できる上、成形加工性も改善
される。(C) Also, the crystal grain size of the alloy materials mentioned above has a considerable influence on the strength and formability, but by taking measures to keep the crystal grain size below a certain value, it is possible to increase the number of pins in the lead frame. Not only can a desirable "further improvement in material strength" be expected, but moldability is also improved.
(d) 従って、Fe−Ni−Crを基本成分とした
合金におけるNi、 Cr、 C,Si及びP等の含
有量を総合的に調整すると同時に、これに特定合金元素
の添加を行うか、或いは更に結晶粒径調整をも実施する
と、強度、熱膨張係数、封着性、成形加工性等の特性に
優れ、しかも非常に良好なエツチング加工性をも備えた
リードフレーム材の実現が可能となる。(d) Therefore, while comprehensively adjusting the content of Ni, Cr, C, Si, P, etc. in the alloy with Fe-Ni-Cr as the basic component, or at the same time adding specific alloying elements to this, Furthermore, by adjusting the crystal grain size, it is possible to create a lead frame material that has excellent properties such as strength, coefficient of thermal expansion, sealing properties, and moldability, and also has very good etching processability. .
本発明は、上記知見事項等゛を基にして完成されたもの
であり、
「リードフレーム材を、
C: 0.015%以下(以降、成分含有割合は重量%
とする)。The present invention was completed based on the above-mentioned findings, etc., and it is based on the above-mentioned findings.
).
Si : 0.001〜0.15%、 P:0.0
1%以下。Si: 0.001-0.15%, P: 0.0
Less than 1%.
S : 0.005%以下、 O: 0.010%
以下。S: 0.005% or less, O: 0.010%
below.
N : 0.005%以下、 Cr:2〜15%。N: 0.005% or less, Cr: 2 to 15%.
Ni:33〜55%
であって、更にCu、 Mn、 Co、 Mo+ W、
V、 Nb+ TatTi、 Zr、 Hf、 B
、 Be+ Mg及びCaの1種以上をも合計で0.0
1〜5.0%含むと共に残部がFe及び不可避的不純物
から成る成分組成に構成することにより、優れたエツチ
ング加工性、封着性及び成形加工性と、高い強度、硬度
とを兼備せしめた点」に特徴を有している。Ni: 33-55%, further containing Cu, Mn, Co, Mo+W,
V, Nb+ TatTi, Zr, Hf, B
, Be + one or more of Mg and Ca in total 0.0
By configuring the composition to include 1 to 5.0% and the balance consisting of Fe and unavoidable impurities, it has excellent etching processability, sealing property, and moldability, as well as high strength and hardness. ” is characterized by
なお、上記本発明に係るリードフレーム材において、 a) C含有量を0.005%以下とする。In addition, in the lead frame material according to the present invention, a) C content is 0.005% or less.
b) St含有量を0.001〜0.05%に調整する
。b) Adjust the St content to 0.001-0.05%.
c) P含有量を0.003%以下とする。c) P content is 0.003% or less.
なる条件を単独で、或いは組み合わせて採用すれば、得
られるエツチング加工性改善効果は特に顕著となり、ま
た
d)最終焼鈍時(最終焼鈍終了時)の結晶粒径を50趨
以下に調整する。If these conditions are adopted alone or in combination, the effect of improving etching workability obtained will be particularly remarkable, and d) the crystal grain size at the time of final annealing (at the end of final annealing) is adjusted to 50 points or less.
との手立てによって強度や成形性が一層向上して安定化
することから、必要に応じてこれらの1つ又は幾つかを
適用することにより多ピンリードフレームの製造にも十
分な対応が可能である。Since strength and formability are further improved and stabilized by these measures, by applying one or more of these as necessary, it is possible to sufficiently respond to the production of multi-pin lead frames. .
次に、本発明において、リードフレーム材の成分組成を
前記の如くに限定した理由を各成分の作用と共に詳述す
る。Next, in the present invention, the reason why the component composition of the lead frame material is limited as described above will be explained in detail together with the effects of each component.
く作用〉
■
Niはリードフレーム材の熱膨張係数を決定するのに重
要な成分であり、封着時や封着後におけるパッケージと
の熱膨張差を小さくして優れた封着性、耐湿信顛性を確
保するためには、Ni含有量を33〜55%に調整する
必要がある。また、Niにはリードフレーム材の強度及
び硬度を向上させる作用もあるが、Ni含有量が33%
未満では所望強度、硬度の確保が困難となる。従って、
Ni含有量は33〜55%と定めた。■ Ni is an important component in determining the thermal expansion coefficient of the lead frame material, and it reduces the difference in thermal expansion with the package during and after sealing, resulting in excellent sealing performance and moisture resistance. In order to ensure strength, it is necessary to adjust the Ni content to 33 to 55%. In addition, Ni has the effect of improving the strength and hardness of lead frame materials, but the Ni content is 33%.
If it is less than that, it will be difficult to secure the desired strength and hardness. Therefore,
The Ni content was determined to be 33 to 55%.
虹
Crもリードフレーム材の熱膨張係数を決定するのに重
要な成分であると同時に、材料の強度及び硬度を向上さ
せるのに有効な成分でもある。しかし、Cr含有量が2
%未満であると熱膨張係数が所望値を超えて太き(なる
ばかりでなく、リードフレーム材の所望強度、硬度の確
保も困難となる。Rainbow Cr is also an important component in determining the coefficient of thermal expansion of the lead frame material, and is also an effective component in improving the strength and hardness of the material. However, the Cr content is 2
If it is less than %, not only will the coefficient of thermal expansion become thicker than the desired value, but it will also be difficult to ensure the desired strength and hardness of the lead frame material.
一方、15%を超えてCrを含有させても熱膨張係数が
所望値を超えて大きくなってしまう。従って、Cr含有
量は2〜15%と定めた。On the other hand, even if Cr is contained in an amount exceeding 15%, the coefficient of thermal expansion becomes larger than the desired value. Therefore, the Cr content was determined to be 2 to 15%.
旦
リードフレーム材中のC含有量が0.015%を超える
と鉄炭化物の生成が起こり、これがリードフレーム材の
エツチング加工性を害する。従って、C含有量の上限を
0.015%と定めたが、固溶Cもエンチング加工性に
悪影響を与えることからC含有量は低いほど良く、出来
れば0.005%以下にまで抑制するのが望ましい。Once the C content in the lead frame material exceeds 0.015%, iron carbides are generated, which impairs the etching processability of the lead frame material. Therefore, the upper limit of the C content was set at 0.015%, but since solid solution C also has a negative effect on etching processability, the lower the C content, the better, and it is recommended to suppress it to 0.005% or less if possible. is desirable.
Siは脱酸材として必要な元素であるが、一方でリード
フレーム材のエツチング加工性に大きな影響を及ぼす元
素でもある。即ち、Si含有量が増加するとエツチング
速度が遅くなってエツチング加工性を悪化する。このた
め、良好なエツチング加工性を確保するにはSi含有量
を0.15%以下に調整する必要がある。特に、多ビン
タイプのリードフレーム材の場合には一段と良好なエツ
チング加工性が要求されることから、Si含有量は好ま
しくは0.05%以下にまで低減するのが良い。ただ、
Si含有量を00001%未満の領域にまで低減すると
脱酸効果が認められなくなってしまう。従って、Si含
有量は0.001〜0.15%と定めたが、上述したよ
うに出来れば0.001〜0.05%に調整するのが好
ましい。Although Si is an element necessary as a deoxidizer, it is also an element that greatly affects the etching processability of lead frame materials. That is, as the Si content increases, the etching rate slows down and etching processability deteriorates. Therefore, in order to ensure good etching processability, it is necessary to adjust the Si content to 0.15% or less. In particular, in the case of a multi-bin type lead frame material, even better etching processability is required, so the Si content is preferably reduced to 0.05% or less. just,
If the Si content is reduced to a region of less than 00001%, the deoxidizing effect will no longer be observed. Therefore, although the Si content was determined to be 0.001 to 0.15%, it is preferable to adjust it to 0.001 to 0.05% if possible as described above.
Pも、Siと同様、過剰に含有させるとリードフレーム
材のエツチング加工性に害を与える元素である。そして
、上記エツチング加工性への悪影響はP含有量が0.0
1%を超えるとより顕著化することから、P含有量は0
.01%以下と定めた。しかし、P含有量を0.003
%以下にまで低減するとエツチング加工性改善効果が一
層顕著となるため、望ましくは0.003%以下に調整
するのが良い。Like Si, P is an element that harms the etching processability of the lead frame material if it is contained in excess. The above-mentioned negative effect on etching processability is caused by P content of 0.0.
Since it becomes more pronounced when it exceeds 1%, the P content is 0.
.. It was set as 0.01% or less. However, the P content is 0.003
If the content is reduced to 0.003% or less, the effect of improving etching processability becomes even more remarkable, so it is preferable to adjust the content to 0.003% or less.
S含有量が0.005%を超えると リードフレーム材
中に硫化物系介在物が多くなり、エツチング加工時の欠
陥となってピン折れ等を引き起こすようになる。従って
、S含有量は0.005%以下と限定した。If the S content exceeds 0.005%, sulfide-based inclusions will increase in the lead frame material, causing defects during etching, such as pin breakage. Therefore, the S content was limited to 0.005% or less.
0含有量が0.010%を超えると リードフレーム材
中に酸化物系介在物が多くなり、やはりエツチング加工
時の穿孔欠陥となることから、0含有量を0.010%
と限定した。If the 0 content exceeds 0.010%, there will be a lot of oxide inclusions in the lead frame material, which will also cause drilling defects during etching, so the 0 content should be reduced to 0.010%.
limited to.
凡
N含有量が0.005%を超えても リードフレーム材
のエツチング加工性が悪化することから、N含有量の上
限を0.005%と定めた。Since the etching processability of the lead frame material deteriorates even if the N content exceeds 0.005%, the upper limit of the N content was set at 0.005%.
CulMn+CoJo、 W、V 、Nb+Ta、Ti
、Zr、Hf、 B +初r1叉墾釦
これらの元素は何れもリードフレーム材の強度や熱膨張
係数を上昇させる作用を有しているため、材料強度の向
上、並びに熱膨張係数を上げてレジンモールドのそれに
近付けることで封着性をより改善する目的で1種又は2
種以上が含有せしめられる。しかし、それらの含有量が
合計で0.01%未満であると前記作用による所望の効
果が得られず、一方、合計の含有量が5.0%を超えた
場合には材料が硬くなり過ぎて成形加工性の悪化を招く
他、適正な熱膨張係数の確保も困難となることから、上
記成分の含有量を合計量で0.01〜5.0%と定めた
。CulMn+CoJo, W, V, Nb+Ta, Ti
, Zr, Hf, B + first r1 protrusion button These elements all have the effect of increasing the strength and thermal expansion coefficient of the lead frame material, so they can improve the material strength and increase the thermal expansion coefficient. Type 1 or 2 for the purpose of improving the sealing property by making it closer to that of resin mold.
More than one species can be contained. However, if the total content is less than 0.01%, the desired effect of the above action cannot be obtained, while if the total content exceeds 5.0%, the material becomes too hard. In addition to causing deterioration in molding processability, it also becomes difficult to secure an appropriate coefficient of thermal expansion, so the content of the above components was determined to be 0.01 to 5.0% in total.
なお、先にも説明したように、最終焼鈍を施した際の結
晶粒径を50m1以下に制御することは強度と成形加工
性の効果的な改善につながることから、好ましくは最終
焼鈍時の結晶粒径を50IIs以下に調整する平文てを
講じるのが良い。ここで、結晶粒度の制御は、焼鈍前の
加工度、焼鈍温度。As explained earlier, controlling the crystal grain size at the final annealing to 50 m1 or less leads to effective improvement of strength and formability, so it is preferable to control the crystal grain size at the final annealing. It is preferable to take measures to adjust the grain size to 50 IIs or less. Here, the grain size is controlled by the working degree and annealing temperature before annealing.
焼鈍時間等の調整によって可能であることは言うまでも
ない。It goes without saying that this is possible by adjusting the annealing time and the like.
続いて、本発明の効果を実施例により更に具体的に説明
する。Next, the effects of the present invention will be explained in more detail with reference to Examples.
〈実施例〉
まず、真空溶解により調整した材料を鋳造し、熱間圧延
及び酸洗の後に冷間圧延と焼鈍を繰り返すと共に、最終
焼鈍後に加工度:40%の冷間圧延を施し、更に500
℃で1時間の歪取り焼鈍を施して第1表に示す如き成分
組成の冷延板(板厚:0.15mm)を製造した。<Example> First, a material prepared by vacuum melting was cast, and after hot rolling and pickling, cold rolling and annealing were repeated, and after the final annealing, cold rolling was performed at a workability of 40%, and further 500%
A cold rolled plate (thickness: 0.15 mm) having the composition shown in Table 1 was produced by subjecting it to strain relief annealing at 1 hour at ℃.
次に、これらの冷延板を脱脂後、レジスト膜を塗布し所
定パターンを焼き付けて現像してから、塩化第2鉄溶液
を用いたエツチング加工により何しモ同一条件の下で1
28ビンのリードフレームを作製した。Next, after degreasing these cold-rolled sheets, a resist film is applied, a prescribed pattern is baked and developed, and then an etching process is performed using a ferric chloride solution under the same conditions.
A lead frame for 28 bottles was produced.
そして、得られたリードフレームにつき、「エツチング
性」の評価として“エツチング加工後のアウターリード
ピン幅とそのバラツキ”を、「機械的特性」の評価とし
て“引張強さ”、“ビッカース硬さ”及び1加工性(曲
げ性)”を、また「封着性」の評価として樹脂封着後に
熱サイクル(80’CX60+1nX100回)を付与
した際のクラック発生の有無をそれぞれ調査した。なお
、前記加工性(曲げ性)の評価は、90度繰返し曲げ試
験(曲げ半径:0.15m)に従って実施した。For the obtained lead frame, the "outer lead pin width and its variation after etching" were evaluated for "etchability", and the "tensile strength", "Vickers hardness" and "mechanical properties" were evaluated. 1 processability (bending property)" and as an evaluation of "sealability", the presence or absence of cracks was investigated when heat cycles (80'CX60+1nX100 times) were applied after resin sealing. The evaluation of the workability (bendability) was carried out according to a 90 degree repeated bending test (bending radius: 0.15 m).
これらの調査結果を、最終焼鈍時の結晶粒径と共に第1
表に併記した。These investigation results were combined with the grain size at the final annealing to
Also listed in the table.
第1表に示される結果からも明らかなように、本発明材
では何れも十分な強度と硬度を有し、かつ優れたエツチ
ング性、成形加工性並びに封着性を示すのに対して、成
分組成が本発明で規定する条件を満たしていない比較材
では上記リードフレーム材に要求される特性の何れかが
劣っていることが分かる。As is clear from the results shown in Table 1, the materials of the present invention all have sufficient strength and hardness, and exhibit excellent etching, molding, and sealing properties. It can be seen that the comparative materials whose compositions do not meet the conditions specified in the present invention are inferior in any of the characteristics required of the above lead frame materials.
即ち、本発明材1〜26は、同一条件下では比較材に比
べてピン幅が狭く、エツチング速度が速いことが確認で
きる。また、エツチングによって形成されたピン幅の標
準偏差(S、D、)も小さく、優れた寸法精度のリード
フレーム製品が得られることも分かる。That is, it can be confirmed that the present invention materials 1 to 26 have narrower pin widths and higher etching speeds than the comparative materials under the same conditions. It can also be seen that the standard deviation (S, D,) of the pin width formed by etching is small, and a lead frame product with excellent dimensional accuracy can be obtained.
一方、比較材28〜30は、各々C,St、 Pの含
有量が高いためにエツチングによって形成されたピン幅
が広(、バラツキも大きい。On the other hand, comparative materials 28 to 30 each have a high content of C, St, and P, so the pin widths formed by etching are wide (and the variation is also large).
なお、比較材27は強度改善並びに熱膨張係数上昇成分
が添加されていないために十分な強度が得られず、熱膨
張係数も小さ過ぎて封着性にも劣ることが分かる。In addition, it can be seen that Comparative Material 27 does not have sufficient strength because no component for improving strength or increasing the coefficient of thermal expansion is added, and the coefficient of thermal expansion is also too small, resulting in poor sealing properties.
比較材31は、S含有量が高いために曲げ加工試験でビ
ン折れが発生した。Comparative material 31 had a high S content, so the bottle broke in the bending test.
比較材32及び33は、強度改善成分の含有量が多過ぎ
るため曲げ加工性が悪く、エツチング加工性にも劣って
いる。Comparative materials 32 and 33 have poor bending workability and poor etching workability because the content of strength improving components is too large.
比較材34は結晶粒径が非常に大きくて0含有量も多少
多い材料であるが、このように結晶粒径が50mを1か
に上回る大きさになると十分な強度(硬さ)を確保でき
ない。Comparative material 34 has a very large crystal grain size and a somewhat high zero content, but when the crystal grain size exceeds 50 m or more, sufficient strength (hardness) cannot be ensured. .
比較材35は、強度改善成分の含有量が少ないために十
分な強度(硬度)を示さない。Comparative material 35 does not exhibit sufficient strength (hardness) because the content of the strength improving component is small.
(効果の総括)
以上に説明した如く、この発明によれば、優れたエツチ
ング加工性、封着性及び成形加工性と、高い強度及び硬
度とを兼備したリードフレーム材の提供が可能となり、
半導体機器の更なる高集積化を容易化できるなど、産業
上極めて有用な効果がもたらされる。(Summary of Effects) As explained above, according to the present invention, it is possible to provide a lead frame material that has excellent etching processability, sealing property, and moldability, as well as high strength and hardness.
This brings about extremely useful effects industrially, such as making it easier to further increase the degree of integration of semiconductor devices.
Claims (5)
、P:0.01%以下、S:0.005%以下、O:0
.010%以下、N:0.005%以下、Cr:2〜1
5%、Ni:33〜55% であって、更にCu、Mn、Co、Mo、W、V、Nb
、Ta、Ti、Zr、Hf、B、Be、Mg及びCaの
1種以上をも合計で0.01〜5.0%含むと共に残部
がFe及び不可避的不純物から成ることを特徴とする、
エッチング加工性及び封着性に優れた高強度リードフレ
ーム材。(1) C: 0.015% or less, Si: 0.001 to 0.15% by weight
, P: 0.01% or less, S: 0.005% or less, O: 0
.. 0.010% or less, N: 0.005% or less, Cr: 2-1
5%, Ni: 33-55%, and further contains Cu, Mn, Co, Mo, W, V, Nb
, containing one or more of Ta, Ti, Zr, Hf, B, Be, Mg and Ca in a total of 0.01 to 5.0%, with the balance consisting of Fe and unavoidable impurities.
High-strength lead frame material with excellent etching processability and sealing properties.
1に記載のリードフレーム材。(2) The lead frame material according to claim 1, wherein the C content is 0.005% by weight or less.
、請求項1又は2に記載のリードフレーム材。(3) The lead frame material according to claim 1 or 2, having a Si content of 0.001 to 0.05% by weight.
1乃至3の何れかに記載のリードフレーム材。(4) The lead frame material according to any one of claims 1 to 3, wherein the P content is 0.003% by weight or less.
求項1乃至4の何れかに記載のリードフレーム材。(5) The lead frame material according to any one of claims 1 to 4, wherein the crystal grain size at the time of final annealing is 50 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33776789A JPH03197648A (en) | 1989-12-26 | 1989-12-26 | Lead frame material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33776789A JPH03197648A (en) | 1989-12-26 | 1989-12-26 | Lead frame material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03197648A true JPH03197648A (en) | 1991-08-29 |
Family
ID=18311773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33776789A Pending JPH03197648A (en) | 1989-12-26 | 1989-12-26 | Lead frame material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03197648A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5786267A (en) * | 1993-06-22 | 1998-07-28 | Kabushiki Kaisha Toshiba | Method of making a semiconductor wafer with alignment marks |
-
1989
- 1989-12-26 JP JP33776789A patent/JPH03197648A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5786267A (en) * | 1993-06-22 | 1998-07-28 | Kabushiki Kaisha Toshiba | Method of making a semiconductor wafer with alignment marks |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH03197645A (en) | Lead frame material | |
| JPH03197641A (en) | Lead frame material | |
| JPH0472037A (en) | High strength and low thermal expansion alloy and its manufacture | |
| JPH03197648A (en) | Lead frame material | |
| JP3133350B2 (en) | Lead frame material manufacturing method | |
| JP3000154B2 (en) | Lead frame material manufacturing method | |
| JPH04224630A (en) | Manufacture of lead frame material | |
| JPH03197646A (en) | Lead frame material | |
| JPH04231418A (en) | Production of lead frame material | |
| JPH04221039A (en) | Alloy material for lead frame and its production | |
| JPH03197647A (en) | Lead frame material | |
| JPH04191316A (en) | Manufacture of lead frame material | |
| JPH0681035A (en) | Production of lead frame material | |
| JPH04221020A (en) | Manufacture of lead frame | |
| JPH04191317A (en) | Manufacture of lead frame material | |
| JPH04231421A (en) | Production of lead frame material | |
| JPH03197644A (en) | Lead frame material | |
| JPH04224632A (en) | Manufacture of lead frame material | |
| JPH04224631A (en) | Manufacture of lead frame material | |
| JPH04231420A (en) | Production of lead frame material | |
| JPH04221040A (en) | Alloy for lead frame and its production | |
| JPH04221022A (en) | Manufacture of lead frame material | |
| JPH04221021A (en) | Manufacture of lead frame | |
| JPH04231416A (en) | Production of lead frame material | |
| JPH04221023A (en) | Manufacture of lead frame material |