JPH03202467A - Device for processing base material by high-frequency plasma - Google Patents

Abstract

PURPOSE:To produce optimum plasma over a wide range and to form a good quality base material on a substrate by providing a coil for producing high-frequency plasma and a waveguide for producing microwave plasma in a plasma chamber and selectively controlling a power source means. CONSTITUTION:A high-frequency induced plasma vessel 18 for producing plasma is fixed to one side surface of a plasma vessel 11, and an induction plasma coupling coil 19 is arranged on the periphery of the vessel 18. A waveguide 20 is provided on the other side surface of the vessel 18 through a quartz window 11b. The high-frequency power and microwave power outputted from a power unit 24 are independently, successively, or compositely controlled by a controller 25. Consequently, optimum plasma is produced in the vessel 11, and amorphous carbon, amorphous silicon, diamondlike film, superconducting thin film plasma polymerized film, etc., are formed on the substrate 17 by sputtering, CVD, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION a. Field of Industrial Application The present invention provides high frequency sputtering, high frequency induction plus 7CVD (Chemical Vapor De
The present invention relates to a high-frequency plasma material processing device that generates a material on a substrate using either a chemical vapor deposition (chemical vapor deposition) method or a microwave plasma CVD method, or by sequentially using them, or by combining them.

b. Conventional technology Conventionally, the above-mentioned high frequency sputtering method, high frequency induced plasma C
There is an apparatus that generates a material on a substrate using either a VD method or a microwave plasma CVD method.

Generally, the high-frequency plasmas used are classified into ultra-high temperature plasmas such as thermal plasmas, and low-temperature plasmas such as CvD, and are widely used in various industrial fields. For example, in the semiconductor field, it is used for ion processing and film formation, and in the materials field, it is used to create materials, especially for the synthesis of superconducting thin films and diamond films.

FIG. 2 is a conceptual diagram of a conventional so-called high frequency plasma material processing apparatus. The plasma vessel 1 is supplied with the required type of gas from the gas introduction boat 2, and
By evacuating the exhaust boat 3 at a predetermined flow rate with the vacuum pump 4, the inside of the container 1 is always kept at a constant pressure (1000
~I x 10-'torr).

Inside the plasma container 1, there is a substrate stand 6 along with a flat plate electrode 5.
A substrate 7 on which a raw material (substance) is to be produced is placed on the substrate table 6. Between the electrode 5 and the substrate 7, a signal with a frequency of 13.56M is applied from outside the container 1.
High frequency power of Hz is supplied from the power supply device f8 via the high frequency matching box 9. Therefore, plasma is generated in the container 1 due to high frequency discharge, and the material of the electrode 5 is sputtered onto the substrate 7 by high frequency sputtering.

C8 Problems to be Solved by the Invention However, in the single-method high-frequency plasma material processing apparatus, the characteristics of the high-frequency plasma generated in the container 1 are determined by the frequency used. In other words, the device is highly frequency dependent, such as plasma size, plasma distribution,
Plasma density, reaction rate, etc. change depending on the frequency used, and there is a problem that it is difficult to generate high-quality high-frequency plasma that matches the conditions such as the shape of the plasma container, electrodes, type of gas, and load. there were.

Therefore, there is a problem that the material produced for the substrate 7 is not of good quality.

The present invention has been made in view of the above-mentioned problems, and its purpose is to solve the above-mentioned problems and produce a high-quality material on a predetermined substrate. It is an object of the present invention to provide a high-frequency plasma material processing apparatus in which a method using a microwave plasma CVD method and a method using a microwave plasma CVD method are added, and these methods are used alone, sequentially, or in combination.

68 Means for Solving the Problems The structure of the present invention for achieving the above object is to supply necessary gas to a plasma chamber in which an electrode and a substrate are disposed, and to supply gas from the plasma chamber. In a high frequency plasma material processing device, which sets a gas pressure to an arbitrary value while exhausting gas and supplies a first high frequency power between the electrode and the substrate, generating high frequency induced plasma in the plasma chamber of the device. A coil for generating microwave plasma and a waveguide for generating microwave plasma are provided in the same room, and the first high frequency power, the second high frequency power to be supplied to the coil, and the microwave power to be supplied to the waveguide. A power supply device that respectively generates wave power, and a control device that controls the power supply device so as to select and supply one or more of the respective power sources at the same time; High frequency sputtering method, high frequency induced plasma CVD (Chemical Vapor
The method is characterized in that a material (substance) is produced on the substrate by either a chemical vapor deposition (chemical vapor deposition) method or a microwave plasma CVD method, or by sequentially using them, or by combining them.

e. Function Since the present invention is configured as described above, in addition to a high frequency sputtering device, a high frequency induced plasma CVD device can be installed in the same device.
Add D device and microwave plasma CVD device,
Control each high frequency power and microwave power supplied from the power supply device to these individually, sequentially, or in combination according to a required program of the control device,
Generate high-quality materials (substances) on the substrate.

f. Examples Hereinafter, preferred embodiments of the present invention will be described in detail by way of example based on the drawings.

FIG. 1 is a conceptual diagram showing the configuration of a high frequency plasma material processing apparatus according to an embodiment of the present invention. In the figure, a plasma container 11 made of metal (for example, stainless steel) includes:
The required type of gas is supplied from the gas introduction boat 12, and the interior of the container 11 is always maintained at a constant pressure by exhausting from the exhaust boat 13 at a predetermined flow rate with the vacuum pump 14.

Inside the plasma container 11 are a flat electrode 15 and a substrate stand 16.
are arranged parallel to each other, and a substrate 17 on which a material is to be produced is placed on the substrate table 16. Furthermore, a high-frequency induction plasma container 18 made of quartz for generating plasma inside the container 11 is attached via a flange Ila to one side of the container 11, and an induction plasma coupling coil 19 is attached to the outer periphery of the container 18. is installed. A waveguide 20 is disposed on the other side of the plasma container 11 via a quartz window 11b for introducing microwaves. In addition, 20a is ECR (Electron Cyc
This is a magnet coil for lotron Resonance.

Between the electrode 15 and the substrate 17, a high frequency power with a frequency f is applied from the outside through the plasma container 11, a high frequency power with a frequency f2 is applied to the induction plasma coupling coil 19, and a high frequency power with a frequency f2 is applied to the waveguide 20. A power supply device 24 is connected to supply the microwave power of f3 through the high frequency matching device 21, 22 and the microwave matching device 23, respectively. The power supply device 24 is controlled by a control device 25 so as to supply or stop the output high-frequency power and microwave power of each frequency f, fz, f2 according to a required program.

The control device 25 selects and supplies each power output from the power supply device 24 singly, sequentially, or simultaneously, and supplies the power output from the power supply device 24 to the plasma vessel 11.
The substrate 17 is coated with a material, especially a new material, by generating an optimal plasma within the substrate 17, using one of the high-frequency sputtering method, high-frequency induced CVD method, and microwave plasma CVD method, sequentially using these methods, or combining them. generate.

In other words, amorphous carbon.

Amorphous silicon, diamond-like films, superconducting thin films, plasma polymerized films, etc. have been produced by the inventors.

In this case, in the three methods described above, since the gas pressure within the plasma container 11 may be different, the control device 25 is added with a gas pressure control function.

That is, the gas pressure in the plasma container 11 is detected by the detector 26, this gas pressure detection signal is compared with the set pressure signal in the control device 25, and the vacuum pump 14 is controlled based on the difference signal. 11 is maintained at a predetermined gas pressure.

The plasma chamber 11 has a diameter of 625 cm and a height of 42 cm.
When 0 ■, the frequency used for each power is the frequency f
As 13.56 MI (z or 27.12 MHz, frequency ft as 100) [) tz ~ 400 KHz, frequency f, then 2450 MI (z, each output power is about 5
It is -. The substrate stand 16 also has a substrate 17 to be placed thereon.
approximately 1000″ using a built-in heating device (not shown).
Since the substrate can be heated up to C, it is possible to timely heat the substrate during material production and observe the material production status through the observation quartz window provided on the side surface of the plasma container 11.

It should be noted that the technology of the present invention is not limited to the technology in the above-mentioned embodiments, and means of other modes that perform the same function may be used, and the technology of the present invention can be modified in various ways within the scope of the above-mentioned configuration. It is possible to add.

g0 Effects of the Invention As is clear from the above explanation, the high-frequency plasma material processing device of the present invention can accommodate both high-frequency induced plasma C and high-frequency sputtering devices in the same device.
By adding devices based on the VD method and microwave plasma CVD method, and controlling these devices singly, sequentially, or in combination by a control means, synergistically generating a wide range and optimal high-frequency plasma, A high quality material can be produced on the substrate.

[Brief explanation of drawings]

FIG. 1 is a conceptual diagram showing the configuration of a high frequency plasma material processing apparatus according to an embodiment of the present invention, and FIG. 2 is a conceptual diagram of a conventional same apparatus. 11... plasma chamber, 17... substrate, 19
... Coil, 20... Waveguide, 24.
...Power supply device, 25...Control device.

Claims (1)

[Scope of Claims] Necessary gas is supplied to a plasma chamber in which an electrode and a substrate are disposed, and the gas is set at an arbitrary gas pressure while exhausting the gas from the plasma chamber. A device for supplying a first high-frequency power between a substrate and a substrate, the device comprising: a coil for generating high-frequency induced plasma in the plasma chamber; and a waveguide for generating microwave plasma in the same chamber. and selecting a power supply means for generating each of the first high frequency power, the second high frequency power supplied to the coil, and the microwave power supplied to the waveguide, and a singular number of each of the powers. or a control means for controlling the power supply means so as to select and supply a plurality of them at the same time; 1. A high-frequency plasma material processing apparatus, characterized in that a material is produced on the substrate by using or sequentially or combining them to produce a material on the substrate.