JPH0320453U

JPH0320453U -

Info

Publication number: JPH0320453U
Application number: JP8128189U
Authority: JP
Priority date: 1989-07-11
Filing date: 1989-07-11
Publication date: 1991-02-28

Description

[Brief explanation of the drawing]

第１図は従来型の断面構造図、第２図は本考案
の実施例による断面構造図、第３図は本考案の他
の実施例による断面構造図であり、１……半導体
基体、２……バツクゲート領域、３……ソース領
域、４……ゲート電極、５……ゲート絶縁層、６
……ソース電極、７……層間絶縁層、８……２と
同一導電型の領域、Ａ……半導体基体１の表面部
である。 FIG. 1 is a cross-sectional structural diagram of a conventional type, FIG. 2 is a cross-sectional structural diagram according to an embodiment of the present invention, and FIG. 3 is a cross-sectional structural diagram according to another embodiment of the present invention. ... Back gate region, 3 ... Source region, 4 ... Gate electrode, 5 ... Gate insulating layer, 6
. . . source electrode, 7 . . . interlayer insulating layer, 8 . . . region of the same conductivity type as 2, A .

Claims

[Scope of utility model registration request]

A first region of another conductivity type and a shallower second region of the one conductivity type are formed on a semiconductor layer having one conductivity type, and are in contact with the first region to insulate the gate. In an insulated gate field effect transistor in which a layer is provided, the second region is used as a source region, and a source electrode metal is deposited on the surface of the insulated gate field effect transistor, a third region having the same conductivity type as the first region is used as the source electrode. An insulated gate field effect transistor, characterized in that a PN junction is provided between a metal and the semiconductor layer having the one conductivity type and is shallower than the lower surface of the first region.