JPH0320467A - Diamond-coated sintered compact excellent in adhesion and its production - Google Patents
Diamond-coated sintered compact excellent in adhesion and its productionInfo
- Publication number
- JPH0320467A JPH0320467A JP10216889A JP10216889A JPH0320467A JP H0320467 A JPH0320467 A JP H0320467A JP 10216889 A JP10216889 A JP 10216889A JP 10216889 A JP10216889 A JP 10216889A JP H0320467 A JPH0320467 A JP H0320467A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- base material
- sintered body
- surface layer
- tungsten carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010432 diamond Substances 0.000 title claims description 68
- 229910003460 diamond Inorganic materials 0.000 title claims description 67
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 83
- 238000000576 coating method Methods 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 42
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 239000002344 surface layer Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 13
- 239000012071 phase Substances 0.000 claims description 11
- 239000012808 vapor phase Substances 0.000 claims description 10
- 239000010410 layer Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 238000003786 synthesis reaction Methods 0.000 claims description 5
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 12
- 239000000047 product Substances 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 10
- 229910021385 hard carbon Inorganic materials 0.000 description 10
- 239000010409 thin film Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001069 Raman spectroscopy Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 239000007858 starting material Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005261 decarburization Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000001308 synthesis method Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 101000981091 Enterobacteria phage T4 Protein cef Proteins 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 206010049816 Muscle tightness Diseases 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005267 amalgamation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MHIGBKBJSQVXNH-IWVLMIASSA-N methacycline Chemical compound C=C([C@H]1[C@@H]2O)C3=CC=CC(O)=C3C(=O)C1=C(O)[C@@]1(O)[C@@H]2[C@H](N(C)C)C(O)=C(C(N)=O)C1=O MHIGBKBJSQVXNH-IWVLMIASSA-N 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- -1 probanol Chemical compound 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 230000003716 rejuvenation Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000011345 viscous material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は,炭化タングステンを主成分とするセラミック
ス焼結体の基材の表面にダイヤモンド及び/又はダイヤ
モンド状カーボンの被膜を形成させてなる密着性にすぐ
れたダイヤモンド被覆焼結体及びその製造方法に関し,
具体的には,例えば切削王只材料.耐摩耗工具材料又は
装飾用材料などをt体に、電気産!.?11子産業.I
I1密機器産業.事務機器産業などに用いられる部品用
材料として適ずる密首性にすぐれたダイヤモンド被覆焼
結体及びその製造方法に関するものである。Detailed Description of the Invention (Industrial Field of Application) The present invention provides an adhesive bond formed by forming a film of diamond and/or diamond-like carbon on the surface of a base material of a ceramic sintered body mainly composed of tungsten carbide. Regarding a diamond-coated sintered body with excellent properties and its manufacturing method,
Specifically, for example, cutting materials. Electrical products such as wear-resistant tool materials or decorative materials! .. ? 11th child industry. I
I1 Secret equipment industry. The present invention relates to a diamond-coated sintered body with excellent neck-tightness suitable as a material for parts used in the office equipment industry, etc., and a method for manufacturing the same.
(従来の技術)
従来から金属.合金又はセラミックスなどの焼結体でな
るノエ材の表面にダイヤモンド及び/又はダイヤモンド
状の被膜を形成してなるダイヤモる。このダイヤモンド
被la焼結体は,ダイヤモンドが他の物質との濡れ性に
劣ることから,ダイヤモンド及び/又はダイヤモンド状
カーボンの被膜を基材の表面に、いかにすれば密着性及
び付着性を高めた状態に被覆することができるかという
問題が最人の課題となっている。特に、旋削T只.フラ
イス−[具.ドリル.エンドミルなどの切削下具材料の
場合は、最も苛酷な条件で用いられるために被膜とノエ
材との密着性や付若性が一屑市要な問題となる。(Conventional technology) Traditionally metal. A diamond is made by forming a diamond and/or a diamond-like coating on the surface of a material made of a sintered body such as an alloy or ceramic. Since diamond has poor wettability with other substances, this diamond-coated la sintered body is made by applying a coating of diamond and/or diamond-like carbon to the surface of the base material to improve adhesion and adhesion. The question of whether it is possible to cover the situation has become a major issue for most people. In particular, turning T only. Milling cutter - [Ingredients. Drill. In the case of materials for cutting tools such as end mills, adhesion and rejuvenation between the coating and the material are important issues since they are used under the most severe conditions.
ダイヤモンドの被膜とJJ材との密r1性を高めて,切
削T具材料として用いることが0■能なダイヤモンド被
膜焼結体が多数の提案されており、その代表的なものと
して、特開昭62− 57802号公報,特開昭62
−166904号公報及び特開昭6399102号公報
がある。Many diamond-coated sintered bodies have been proposed that can be used as cutting tool materials by increasing the density of the diamond coating and the JJ material. Publication No. 62-57802, JP-A-62
-166904 and Japanese Unexamined Patent Publication No. 6399102.
(発明が解決しようとずる問題点)
特開閉62 − 57802号公報には,気相により硬
質炭素薄膜を基+4表面に析出させて被葭した硬質炭素
被覆部品の該硬質炭素薄膜と基材との中間にWICを主
成分とずるWとCの化合物薄膜の中間h1を厚さO.l
gm以上ft在させてなる硬質炭素被覆部品が開示され
ている。この同公報による発明は,超硬合金やセラミッ
クスでなる基材の表面にCvD法(化学蒸着法)やPV
D法(物理蒸着法)でもってLCを土成分とするWとC
の化合物薄膜の中間崩を被覆すると硬質炭素と冑,Cの
界面にはWCでなる拡散中間層が形成され、その結果付
着強度の向上を達成できたというものであるけれども、
CvD法やPVD法でもって中間崩を形成した後、別の
反応容器で硬質炭素薄膜を被覆するという工程の類雑さ
があること、及び中間層の表面に不純物が付青しやすい
ということから中間荊と硬質炭素薄膜との密着性が劣る
という問題がある。(Problems to be Solved by the Invention) Japanese Patent Application Laid-open No. 62-57802 discloses a method of depositing a hard carbon thin film on a base material surface using a vapor phase to cover a hard carbon coated part with the hard carbon thin film and the base material. The middle h1 of the compound thin film of W and C containing WIC as the main component is set to have a thickness of O. l
A hard carbon coated part is disclosed that has a carbon coating of more than gm ft. The invention according to the same publication is based on the use of CvD (chemical vapor deposition) or PV on the surface of a base material made of cemented carbide or ceramics.
W and C with LC as soil component using D method (physical vapor deposition method)
It is said that when the intermediate layer is coated with a thin compound film, a diffusion intermediate layer of WC is formed at the interface between hard carbon and C, and as a result, an improvement in adhesion strength can be achieved.
This is because the process of forming an intermediate layer using the CvD method or PVD method and then coating it with a hard carbon thin film in a separate reaction vessel is complicated, and the surface of the intermediate layer is likely to be contaminated with impurities and turn blue. There is a problem in that the adhesion between the intermediate layer and the hard carbon thin film is poor.
特開昭62− 166’l04号公報には、窒化ケイ素
,炭化ケイ素,酸化ジルコニウム.酸化アルミニウムを
主成分とするセラミックス焼結体を基材とし、その表面
に減11l.下で硬質炭素の薄膜を0、5〜50μm被
覆してなるセラミックス焼結体加千川硬質炭素膜被覆切
削T. Itが開示されている。この同公報の発明は、
変形抵抗の高いセラミックスをJJ,材とし、その表面
に硬質炭素の薄膜を形成させることにより、難削材であ
るファインセラミックスの切削加工を可能にしたという
ものであるけれど,例えば硬質炭素の薄膜中にダイヤモ
ンドの含有晴が多くなればなるほど栽材と薄膜との密n
性が劣下し、通にダイヤモンドの含イー74が減少すれ
ばずるほど耐摩粍性が低下するという問題がある。JP-A-62-166'104 discloses silicon nitride, silicon carbide, zirconium oxide. The base material is a ceramic sintered body whose main component is aluminum oxide, and a 11 l. A ceramic sintered body formed by coating a thin film of hard carbon with a thickness of 0.5 to 50 μm at the bottom of the cutting T. It is disclosed. The invention of this publication is
By using ceramics with high deformation resistance as JJ material and forming a thin film of hard carbon on its surface, it has become possible to cut fine ceramics, which are difficult-to-cut materials. The more diamonds are contained in the material, the more dense the material and the thin film are.
There is a problem in that the wear resistance deteriorates as the E content of diamond decreases.
特開昭63− 99102号公報には、タングスデン
を基材とし、該栽材にダイヤモンドを 1〜100μm
被葭してなる被覆タングステン玉l1が開示されている
。この同公報の発明は,超硬合金やセラミックスのJ,
%材表面にダイヤモンド薄膜を形成した従来のダイヤモ
ンド被覆工具がF!J膜と基材との接青強度に問題があ
ったのに対し、タングステンをJA材にすることにより
接若強度の問題を解決したというものであるけれども、
タングステンrl体が軟質であることから型性変形しや
すく、切削−[!1として用いても短身命であるという
問題がある。JP-A No. 63-99102 discloses that tungsden is used as a base material, and diamond is coated with a thickness of 1 to 100 μm on the material.
A covered tungsten ball l1 is disclosed. The invention in the same publication is based on the J of cemented carbide and ceramics.
The conventional diamond coated tool with a diamond thin film formed on the surface of the material is F! Although there was a problem with the coupling strength between the J film and the base material, the issue of coupling strength was solved by using tungsten as a JA material.
Since the tungsten RL body is soft, it is easily deformed and can be cut. Even if it is used as 1, it has a short lifespan.
本発明は,上述のような問題点を解決したもので、具体
的には、基材とダイヤモンド及び/又はダイヤモンド状
カーボンの被膜との創剥離性にすぐれていて、切削王具
材料としても実用可能なダイヤモンド被覆焼結体及びそ
の製造方法の提供を目的とするものである。The present invention solves the above-mentioned problems. Specifically, the present invention has excellent scratch releasability between the base material and the diamond and/or diamond-like carbon coating, and can be used as a material for cutting tools. The object of the present invention is to provide a diamond-coated sintered body and a method for manufacturing the same.
(問題点を解決するための手段)
本発明者らは、気相合成法で形成するダイヤモンドの被
膜を鰭材に被葭する場合、井材の種類.被膜の17さ及
び被膜の形成条件における被膜とJ,l,材との耐剥離
性について検3・lシていた所、炭化タングステンから
なる焼結体の基材の表面にダイヤモンドの被膜を形成す
る場合には、Fe族金属を含イ1している超硬合金やサ
ーメットの基材と異なり、ダイヤモンド気相合成法の初
期におけるグラファイトの析出が抑制されること、又ダ
イヤモンド気相合成法におけるダイヤモンドの被膜形成
前に脱炭処理を行い、次いでダイヤモンドの被膜の形成
を行うと、炭化タングステンの基材と被1模との密着性
が一屑強くなり切削王只材料として実用できるという知
見を得たものである。この知見C基づいて、本発明を完
成するに至ったものである。(Means for Solving the Problems) The present inventors have determined that when coating fin material with a diamond film formed by vapor phase synthesis, the type of material used. 17 Testing the peeling resistance between the coating and the J, l, material under the thickness of the coating and the coating formation conditions 3-1, a diamond coating was formed on the surface of the base material of the sintered body made of tungsten carbide. In this case, unlike cemented carbide or cermet base materials containing Fe group metals, the precipitation of graphite at the initial stage of diamond vapor phase synthesis is suppressed, and We discovered that if decarburization treatment is performed before forming a diamond film, and then a diamond film is formed, the adhesion between the tungsten carbide base material and the first pattern becomes even stronger, allowing it to be put to practical use as a cutting material. That's what I got. Based on this finding C, we have completed the present invention.
すなわち,本発明の密着性にすぐれたダイヤモンド被覆
焼結体は,炭化タングステンを主成分とずる硬質相と不
可避不純物とでなる焼結体のJS材の表面にダイヤモン
ド及び/又はダイヤモンド状カーボンの被膜を形成した
ことを特徴とするものである。That is, the diamond-coated sintered body with excellent adhesion of the present invention has a coating of diamond and/or diamond-like carbon on the surface of the JS material, which is a sintered body consisting of a hard phase mainly composed of tungsten carbide and unavoidable impurities. It is characterized by the formation of
この本発明のダイヤモンド被覆焼結体における硬質相は
,炭化タングステンのみからなる場合5又は炭化タング
ステンが硬質相中の少なくとも5ovojl%含有し,
他に周期律表4a. Sa, 6a族金属の炭化物.炭
電化物及びこれらの相丘固溶体の中の少なくとも1種を
含有している場合である。これらの内,特に硬質相が9
0voj!%以上の炭化タングスデンでなる場合、例え
ばwC又はwc− w.cでなる炭化タングステンのみ
からなる場合、もしくはこれらの炭化タングステン9σ
wail%以−Lと残り炭化モリブデンとからなるVI
C MotC. WC WaC MnxCアるい
はIC − (V4, Mo)Cでなる場合は,被膜と
JJ材との?????性がすぐれると共に,基材の強度
もすぐれるので好ましいことである。The hard phase in the diamond-coated sintered body of the present invention is composed of only tungsten carbide, or tungsten carbide contains at least 5 ovojl% in the hard phase,
Also periodic table 4a. Carbide of Sa, group 6a metal. This is the case when it contains at least one kind of carbide and a phase mound solid solution thereof. Of these, especially the hard phase is 9
0voj! % or more of tungsten carbide, for example wC or wc-w. When consisting only of tungsten carbide consisting of c, or these tungsten carbide 9σ
VI consisting of wail% or more-L and remaining molybdenum carbide
C MotC. WC WaC MnxC or IC - (V4, Mo)C, what about the coating and JJ material? ? ? ? ? This is preferable because it has excellent properties and the strength of the base material.
本発明のダイヤモンド被覆焼結体における基材は、前述
の硬質相の他に不可避不純物が混在しており,この不可
避不純物としては主として出発物質中に含右している不
純物と,出発物質の混合粉砕T稈中に混入してくる不純
物とがあり、後者の不61a不純物としては、混合容器
又はボールなどから混入してくる,例えばCoy Ni
. Fe. II, Cr.MOなどがあり、これらの
不可避不純物が基材中に0.5 voI2%以下、含石
している場合でも基材と被膜との密着性の低下が少なく
,かえってJ工材の強度を補うという効果もあることか
ら実川可能である。これらの基材は、このノ↓材の表面
から内部に向って多くとも10μmまでの表面層に存7
Fする炭化タングステンの粒径がこの表面荊を除いた,
さらに』^材内部にt7− /Eする炭化タングスデン
の甲均粒杼に比べて微細である摺成にずると, J,I
,材と被膜との密着性がよりすぐれること、及び被膜の
膜質を高めることから、特に好ましいことである。The base material of the diamond-coated sintered body of the present invention contains unavoidable impurities in addition to the above-mentioned hard phase, and these unavoidable impurities mainly include impurities contained in the starting material and mixtures of the starting material. There are impurities that get mixed into the crushed T culm, and the latter impurities include Coy Ni that gets mixed in from the mixing container or ball, etc.
.. Fe. II, Cr. MO, etc., and even if these unavoidable impurities are contained in the base material at 0.5 vol2% or less, there is little decrease in the adhesion between the base material and the coating, and it is said that it actually supplements the strength of the J construction material. It is possible because it is effective. These base materials exist in the surface layer of at most 10 μm from the surface of this material toward the inside.
The particle size of tungsten carbide in F is
In addition, if we move to the surface of the material, which is finer than that of the tungden carbide shell, which has t7-/E inside the material, J, I
This is particularly preferable because it improves the adhesion between the material and the coating and improves the quality of the coating.
↑,!に,表面酎中の炭化タングスデンの拉径が1.0
μm以下.打ましくは0、5μm以下の場合には基材と
被膜との密着性がより一周すぐれる卸向になることから
好ましいことである。↑,! , the diameter of the tungsten carbide in the surface liquor is 1.0.
Less than μm. Preferably, when the thickness is 0.5 μm or less, the adhesion between the base material and the coating becomes even better.
本発明のダイヤモンド被覆焼結体における被膜は,?l
気抵抗.光透過率.硬度などがダイヤモンドの性質又は
ダイヤモンドに近い性質を后ずもので,11体的には,
ラマン分光分析した場合にダイヤモンドのラマン線であ
るといわれている1333cm−’にピークを示すもの
である.さらに許述ずると、この被膜はダイヤモンドの
みからなる場合,又はダイヤモンドと他に非品質カーボ
ンやガラス状カーボンなどを含有している場合,もしく
は、ダイヤモンドが含右していなくても従来からダイヤ
モンドに近い性質を示すものであるといわれているダイ
ヤモンド状カーボンからなる場合があ゛る。特に,0?
i述の表面崩を有する基材に形成された被膜の場合には
,ラマン分九分析におけるダイヤモンドのラマン線であ
るといわれている1333cm−’のピークが明確に表
われた膜竹のすぐれたものになる。この被膜の厚さは、
用途及び形状によって異なり,特に耐衝撃性より゜も耐
すきとり摩耗竹を10暇視するような用途には、例えば
3〜10μml’;lさが好ましく、切削工具材料とし
ての用途には、8.5〜7μm厚さが好ましく、切削工
具材料の中でもフライス用切削工具のように耐衝撃性を
重要視する用途及びドリルやエンドミル、あるいは耐摩
耗工具材料の中のスリッター,切断刃.裁断刃などのよ
うに鋭角な切刃を有する用途には、例えば0.5〜3μ
m厚さと,被膜を薄くする構成にすることが好ましいこ
とである。What is the coating in the diamond-coated sintered body of the present invention? l
Qi resistance. Light transmittance. Hardness etc. are properties of diamond or properties similar to diamond, and 11 physical properties are:
When subjected to Raman spectroscopy, it shows a peak at 1333 cm-', which is said to be the Raman line of diamond. Furthermore, if this coating consists only of diamond, or if it contains non-quality carbon or glassy carbon in addition to diamond, or even if it does not contain diamond, it may be It is often made of diamond-like carbon, which is said to have similar properties. Especially 0?
In the case of a film formed on a base material with surface collapse as described in i above, the peak of 1333 cm-', which is said to be the Raman line of diamond in Raman analysis, clearly appeared. Become something. The thickness of this coating is
It varies depending on the use and shape, and in particular, for uses where bamboo is more resistant to scraping than impact resistance, it is preferably 3 to 10 μml, and for use as a cutting tool material, it is preferably 8. A thickness of .5 to 7 μm is preferred, and among cutting tool materials, applications where impact resistance is important such as cutting tools for milling, drills and end mills, and wear-resistant tool materials such as slitters and cutting blades. For applications with sharp cutting edges such as cutting blades, for example, 0.5 to 3μ
It is preferable to adopt a structure in which the thickness is m and the coating is thin.
本発明のダイヤモンド被覆焼結体は,炭化タングステン
を主成分とする硬質相を形成するための出発物質を従来
の粉末冶金による方法でもって焼結体とし,この焼結体
の基材の表面に従来のマイロク波プラズマ.高周波プラ
ズマ又は熱フィラメントによるプラズマ中で気相合成し
てダイヤモンドの被膜を形成させることにより得ること
ができるけれども、次の方法で行うと基材と被膜との密
着性がよりすぐれるので好ましいことである.すなわち
、本発明の密着性にすぐれたダイヤモンド被覆焼結体の
製造方法は,炭化タングステンを主成分とする硬質相と
不可避不純物とでなる焼結体の基材を反応容器内に設置
し、該反応容器内を脱炭性雰囲気でもって9i.温して
該栽材の表面層を脱炭した後、1該塙材の表面層の表面
に気相合成法でもってダイヤモンド及び/又はダイヤモ
ンド状カーボンの被膜を形成すると共に、該表面屠を市
び炭化タングステンを主成分とする炭化物の屑にするこ
とを特徴とする方法である。In the diamond-coated sintered body of the present invention, a starting material for forming a hard phase mainly composed of tungsten carbide is made into a sintered body by a conventional powder metallurgy method, and the surface of the base material of this sintered body is coated. Conventional microwave plasma. Although it can be obtained by forming a diamond film by vapor phase synthesis in high-frequency plasma or hot filament plasma, the following method is preferable because the adhesion between the base material and the film is better. be. That is, in the method of manufacturing a diamond-coated sintered body with excellent adhesion according to the present invention, a sintered body base material consisting of a hard phase mainly composed of tungsten carbide and unavoidable impurities is placed in a reaction vessel, 9i. with a decarburizing atmosphere inside the reaction vessel. After decarburizing the surface layer of the cultivated material by heating, 1. forming a coating of diamond and/or diamond-like carbon on the surface layer of the cultivated material using a vapor phase synthesis method, and exposing the surface layer to the market. This method is characterized by turning carbide into scraps whose main component is tungsten carbide.
この本発明のダイヤモンド被覆焼結体の製逍h法におけ
る基材は、炭化タングステンを主成分とする出発物質を
混合粉砕後,ホットプレス焼結,又はΔ通焼結後に熱間
静水圧処Fl! ( IIIP処理)することにより緻
密な焼結体にすることができる。The base material in the manufacturing method of the diamond-coated sintered body of the present invention is prepared by mixing and pulverizing a starting material mainly composed of tungsten carbide, followed by hot press sintering or delta sintering, followed by hot isostatic pressing Fl. ! (IIIP treatment) allows a dense sintered body to be obtained.
こうして得た基材をダイヤモンドの気相合成用の反応容
器に設1r1シ、この反応容器内な脱炭性雰囲気でもっ
て″i#温して凸材の表面から多くとも10μmの内部
までの表面層を脱炭した後,気相合成法によるダイヤモ
ンド被覆処理を行って、1度晩炭した表面層を再品出し
た炭化タングステン又は炭化タングステンを主成分とす
る炭化物の帝にすると共に,この表面層−Lにダイヤモ
ンド及び/又はダイヤモンド状カーボンの被膜を形成す
る方法である。The base material obtained in this way was placed in a reaction vessel for diamond vapor phase synthesis, and heated in a decarburizing atmosphere in the reaction vessel to a depth of at most 10 μm from the surface of the convex material to the inside. After decarburizing the layer, a diamond coating treatment is performed using the vapor phase synthesis method, and the surface layer that has been overnight carbonized is turned into a regenerated tungsten carbide or a carbide whose main component is tungsten carbide. This is a method of forming a coating of diamond and/or diamond-like carbon on layer-L.
このように基材の表面層を脱炭した後、再度炭化物とし
て形成される再晶出炭化タングステンは、表面層よりも
基村内部の炭化タングステンに比べて微細粒径にするこ
とができる.
本発明のダイヤモンド被覆焼結体の製造方法における反
応容器内を脱炭性雰囲気にする場合は,神々のガス雰囲
気による方法で行うことができるが,後工程である被膜
の形成工程を連続的に行うために,例えば水素ガスとI
lv2素ガスとの混合ガス,又は水素ガスと酸素ガスと
炭素の供給源となりうるガスとの混合ガスからなる雰囲
気であることが好ましく,水素ガスと酸素ガスとの混合
ガスの場合には、混合割合によっては煽発が起こるので
注意する必要があり、特に酸素ガス0.1〜5you%
と、残り水素ガスとの比率でなる脱炭性雰囲気でなる場
合は、安全性が高いこと,微細粒の炭化物でなる表面崩
になること、及び表面層と被膜との耐剥離性にもすぐれ
ていることから好ましいことである.ここでいう炭素の
供給源となりうるガスとは、例えばメタン.エタン.プ
ロパン.ブタン.メタノール.エタノール,プロバノー
ル,ブタノール.メチルエーテル,エチルエーデルなど
の炭素と水素又は炭素と水素と酸素の含{Tした有機化
合物を挙げることができる。この脱炭性′:3ν目気で
もって昇温する場合は,基材の温度を500〜1200
℃でプラズマ化処理をすることが灯ましいことである。After decarburizing the surface layer of the base material in this way, the recrystallized tungsten carbide that is formed again as a carbide can have a finer grain size than the tungsten carbide inside the base layer than the surface layer. In the method for producing a diamond-coated sintered body of the present invention, creating a decarburizing atmosphere inside the reaction vessel can be done by using a divine gas atmosphere. For example, hydrogen gas and I
It is preferable that the atmosphere consists of a mixed gas with lv2 elementary gas, or a mixed gas of hydrogen gas, oxygen gas, and a gas that can be a source of carbon. It is necessary to be careful as agitation may occur depending on the proportion, especially oxygen gas 0.1 to 5%.
In the case of a decarburizing atmosphere with a ratio of This is a good thing because it is The gas that can be a source of carbon here is, for example, methane. Ethane. propane. butane. methanol. Ethanol, probanol, butanol. Examples include organic compounds containing carbon and hydrogen or carbon, hydrogen, and oxygen, such as methyl ether and ethyl ether. This decarburization property': When increasing the temperature by 3ν, the temperature of the base material is set to 500 to 1200.
It is a good idea to perform plasma conversion treatment at ℃.
このときのプラズマ化処理は,従来のマイロク波や高周
波もしくは熱フィラメント法などで行うことができ、こ
のプラズマ化処理状態でもって同一反応容器中で引続き
従来の気相合成法によるダイヤモンド被覆処理を行うと
、表面居と被膜間への不純物の付青が殆どないことから
奸ましいことである。Plasma treatment at this time can be performed using conventional microwave, high frequency, or hot filament methods, and in this plasma treatment state, diamond coating treatment using the conventional vapor phase synthesis method is subsequently performed in the same reaction vessel. This is strange because there is almost no impurity buildup between the surface and the coating.
(作用)
本発明の密着性にすぐれたダイヤモンド披葭焼結体は,
J^材中の炭化タングステンが被膜との密n性を高める
作用をしているもので、特に基材の表面欝に形成された
再品出された微細な炭化タングステンが被膜との密着性
を病めると共に、膜質をすぐれたものにして,被膜の耐
摩耗性及び11剥離性を高める作用をしているものであ
る。(Function) The diamond sintered body with excellent adhesion of the present invention has the following properties:
The tungsten carbide in the J^ material has the effect of increasing the adhesion with the coating.In particular, the recycled fine tungsten carbide formed on the surface of the base material improves the adhesion with the coating. It has the effect of improving the film quality and increasing the abrasion resistance and removability of the film.
本発明の密着性にすぐれたダイヤモンド被覆焼結体の5
J造方法は、脱炭性雰囲気での処理工程と気相合I戊法
によるダイヤモンド被覆処理における初期段階での工程
により微細粒で再品出した炭化物、特に炭化タングステ
ンでなる表面層が形成されること,またプラズマ処理中
での脱炭性雰囲気とプラズマ処理中でのダイヤモンド被
覆処理とを同−反応容器中で連続的に行うことができ,
その結果表面肋と被膜との界面に不純物を/F:.じ難
くし、しかもダイヤモンドの核生成の促進を痛め、緻審
で微細粒でなる被膜を生成しやすくしているものである
。5 of the diamond-coated sintered body with excellent adhesion of the present invention
In the J manufacturing method, a surface layer made of fine grained recycled carbide, especially tungsten carbide, is formed through a treatment process in a decarburizing atmosphere and an initial step in the diamond coating process using the vapor phase amalgamation process. Moreover, the decarburizing atmosphere during plasma treatment and the diamond coating treatment during plasma treatment can be performed continuously in the same reaction vessel.
As a result, impurities are deposited at the interface between the surface ribs and the coating. Moreover, it makes it difficult to promote diamond nucleation and makes it easier to form a film consisting of fine grains.
(実施例〉
実施例1
・lξ均粒径3.0μmのWC, MoxCを超硬合金
製ボールと共に湿式でボールミル混合粉砕及び乾燥後、
真空中でホットプレス焼結して、WCを主成分とする焼
結体の塙材を得た.この基材の表面状態を第l表に示す
ように焼肌而又は研削面にした後、下記IA)の脱炭性
雰囲気条件でもって脱炭処凱し,引続き同−反応容器の
中で下.sL!!II)のダイヤモンド被覆処理条件で
もってダイヤモンド被膜なJ,r+材の表面に形成して
本発明品1.2.4を?りた。また,下記(A)条件に
よる脱炭処理を?7格してド記{ロ}の条件でもってダ
イヤモンド被1yLをノ1(村の表面に形成して本発明
品3を得た。(Example) Example 1 WC and MoxC with an average particle size of 3.0 μm were mixed and ground in a wet ball mill with cemented carbide balls, and after drying,
Hot press sintering was carried out in a vacuum to obtain a sintered material containing WC as a main component. After the surface condition of this base material is burnt or ground as shown in Table 1, it is decarburized under the decarburizing atmosphere conditions described in IA) below, and then lowered in the same reaction vessel. .. SL! ! Product 1.2.4 of the present invention was obtained by forming a diamond coating on the surface of J, r+ material under the diamond coating treatment conditions of II). It was. Also, what about the decarburization treatment under the following conditions (A)? Inventive product 3 was obtained by forming a diamond coating 1yL on the surface of No. 1 (mura) under the conditions described in (b).
(A)脱炭性雰囲気条件
ガス組成 99vol%llx − 1 von
%0,ガス圧力 60 Torr
ノ真材温度 930℃
マイロク波出力 0.7 kw
処理115間 30 min
tB)ダイヤモンド被覆処理条件
ガス組成 911voI2%Il2−2vnl2
.%CILガス圧力 80 Torr
基材温度 1060 ℃
マイロク波出力 1.0 km
処理時間 !20 rain
比較品として、市販の窒化ケイ素系セラミックスの基材
の表面に上記([1)の処理を施して比較品lを得た。(A) Decarburizing atmospheric conditions Gas composition 99vol%llx - 1 von
%0, Gas pressure 60 Torr True material temperature 930℃ Microwave output 0.7 kW Treatment time 30 min tB) Diamond coating treatment conditions Gas composition 911voI2%Il2-2vnl2
.. %CIL gas pressure 80 Torr Base material temperature 1060 ℃ Microwave output 1.0 km Processing time ! 20 rain As a comparative product, Comparative Product 1 was obtained by subjecting the surface of a commercially available silicon nitride ceramic base material to the above treatment ([1)].
また,市販の超硬合金の県材を別の反応容器に設ifi
L, . w+−a − CI1. − I1.混合
雰開気中でCVD処理して、栽材の表面にW2Cを約
1.5μm被りロした後、ヒ記([11の処理を施して
比較品2を?rlた。さらに,市販のW板をJ,I+材
とし、この括材を上記(B)の処理を施して比較品3を
得た。In addition, a commercially available cemented carbide material was placed in a separate reaction vessel.
L, . w+-a-CI1. - I1. Approximately W2C is applied to the surface of the planting material by CVD treatment in a mixed atmosphere.
After 1.5 μm of overlapping, the comparative product 2 was prepared by applying the treatment described in [11].Furthermore, the commercially available W plate was made into J, I+ material, and this bracket was subjected to the treatment described in (B) above. Comparative product 3 was obtained.
こうして15た本発明品1.2.3.4及び比較品1,
2.3のダイヤモンドの被膜の厚さを調べて第1表に示
した。また,本発明品1.2.4の(Al処理を施した
試料は、X線回折及びSEMでもって表面荊を調べて、
その結果を第l表に併記した。In this way, the present invention product 1.2.3.4 and comparative product 1,
The thickness of the diamond coating of No. 2.3 was investigated and shown in Table 1. In addition, the surface cracks of the Al-treated sample of product 1.2.4 of the present invention were examined using X-ray diffraction and SEM.
The results are also listed in Table I.
これらの本発明品1.2.3.4及び比較品1.2.3
を用いて,下記(C)条件.(ロ)条件による切削試験
を行い,そのときの乎均逃げ面摩耗量及び引傷状況を観
察して、その結果を第2表に示した。These invention products 1.2.3.4 and comparative products 1.2.3
Using the following condition (C). (b) A cutting test was conducted under various conditions, and the uniform flank wear and scratch conditions were observed. The results are shown in Table 2.
tc)旋削試験条件
被削材
チップ形状
切削速度
送 り
切込みh1
切削時間
評価
{0}旋削試験条件
被削材
チップ形状
切削速度
送 り
切込み凱
切削時間
^氾一l8%Si合金
SI’GN 120308
226 m/min
0.1 mm/rev
O、5 mrn
20 min
平均逃げ面摩耗FiNV1、mm)
硬質カーボン
SNCN 43ZFN
356 m/min
O.06 mm/rev
0.5mm
60 min
以下余白
(発明の効果〉
以上の結果から、本発明の密着性にすぐれたダイヤモン
ド被覆焼結体は、窒化ケイ素系セラミックス基材. W
.Cの被覆屑を右する超硬含金の栽H又はWの基材のそ
れぞれの表面にダイヤモンドの被膜を形成してなる従来
のダイヤモンド被覆焼粘体に比較して,被膜と基材との
密nWがすぐれており,切削工兵材料として用いた場合
に,被膜の耐剥離性が苦しくすぐれており、その結果耐
摩耗性及び耐欠損性にすぐれるという効果があり,ノt
命において20%〜8倍程度もすぐれるという効果があ
る。tc) Turning test conditions Workpiece material Chip shape Cutting speed Feed Cutting time evaluation {0} Turning test conditions Workpiece material Chip shape Cutting speed Feed Cutting depth Kai Cutting time ニ Flood l 8% Si alloy SI'GN 120308 226 m/min 0.1 mm/rev O, 5 mrn 20 min Average flank wear FiNV1, mm) Hard carbon SNCN 43ZFN 356 m/min O. 06 mm/rev 0.5 mm 60 min Below margin (Effects of the invention) From the above results, the diamond-coated sintered body with excellent adhesion of the present invention is a silicon nitride ceramic base material.W
.. Compared to the conventional diamond-coated sintered viscous material in which a diamond coating is formed on each surface of a cemented carbide metal-containing base material of H or W containing coated scraps of C, the density between the coating and the base material is lower. nW is excellent, and when used as a cutting engineer material, the peeling resistance of the coating is very good, resulting in excellent wear resistance and chipping resistance.
It has the effect of improving your life by 20% to 8 times.
また、本発明の密行性にすぐれたダイヤモンド被覆焼結
体の製造方法は,基材の表面を炭化タングステンを主成
分とする微細粒の表面層にすることができ、この表面層
と被膜との密着性をより屑すぐれたものにさせつるとい
う効果がある。In addition, the method of manufacturing a diamond-coated sintered body with excellent tightness according to the present invention allows the surface of the base material to be formed into a surface layer of fine grains mainly composed of tungsten carbide, and this surface layer and the coating can be It has the effect of making the adhesion of the powder even better.
Claims (6)
避不純物とでなる焼結体の基材の表面にダイヤモンド及
び/又はダイヤモンド状カーボンの被膜を形成してなる
ことを特徴とする密着性にすぐれたダイヤモンド被覆焼
結体。(1) Excellent adhesion characterized by forming a diamond and/or diamond-like carbon film on the surface of a sintered body base material consisting of a hard phase mainly composed of tungsten carbide and unavoidable impurities. Diamond-coated sintered body.
ステンでなることを特徴とする特許請求の範囲第1項記
載の密着性にすぐれたダイヤモンド被覆焼結体。(2) The diamond-coated sintered body with excellent adhesion according to claim 1, wherein the hard phase is made of 90 vol% or more of tungsten carbide.
くとも10μmまでの表面層における炭化タングステン
の粒径が該表面層を除いた内部に存在する炭化タングス
テンの平均粒径に比べて微細であることを特徴とする特
許請求の範囲第1項又は第2項記載の密着性にすぐれた
ダイヤモンド被覆焼結体。(3) The base material has a grain size of tungsten carbide in the surface layer of at most 10 μm from the surface of the base material inward, compared to the average grain size of tungsten carbide present in the interior excluding the surface layer. A diamond-coated sintered body with excellent adhesion according to claim 1 or 2, characterized in that the diamond-coated sintered body has a fine grain.
を特徴とする特許請求の範囲第1項、第2項又は第3項
記載の密着性にすぐれたダイヤモンド被覆焼結体。(4) A diamond-coated sintered body with excellent adhesion according to claim 1, 2, or 3, wherein the coating has a thickness of 8.5 to 10 μm.
避不純物とでなる焼結体の基材を反応容器内に設置し、
該反応容器内を脱炭性雰囲気でもって昇温して該基材の
表面層を脱炭した後、該基材の表面層の表面に気相合成
法でもってダイヤモンド及び/又はダイヤモンド状カー
ボンの被膜を形成すると共に、該表面層を炭化タングス
テンを主成分とする層にすることを特徴とする密着性に
すぐれたダイヤモンド被覆焼結体の製造方法。(5) A sintered body base material consisting of a hard phase mainly composed of tungsten carbide and unavoidable impurities is placed in a reaction vessel,
After decarburizing the surface layer of the base material by raising the temperature in a decarburizing atmosphere in the reaction vessel, diamond and/or diamond-like carbon is added to the surface layer of the base material by vapor phase synthesis. A method for producing a diamond-coated sintered body with excellent adhesion, characterized by forming a film and making the surface layer a layer containing tungsten carbide as a main component.
混合ガス、又は水素ガスと酸素ガスと炭素の供給源とな
りうるガスとの混合ガスからなることを特徴とする特許
請求の範囲第4項記載の密着性にすぐれたダイヤモンド
被覆焼結体の製造方法。(6) The decarburizing atmosphere is comprised of a mixed gas of hydrogen gas and oxygen gas, or a mixed gas of hydrogen gas, oxygen gas, and a gas that can be a source of carbon. 4. A method for producing a diamond-coated sintered body with excellent adhesion according to item 4.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1102168A JP2620971B2 (en) | 1989-04-21 | 1989-04-21 | Diamond coated sintered body with excellent adhesion and method for producing the same |
| US07/623,493 US5100703A (en) | 1989-02-23 | 1990-12-07 | Diamond-coated sintered body excellent in adhesion and process for preparing the same |
| US07/798,972 US5204167A (en) | 1989-02-23 | 1991-11-29 | Diamond-coated sintered body excellent in adhesion and process for preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1102168A JP2620971B2 (en) | 1989-04-21 | 1989-04-21 | Diamond coated sintered body with excellent adhesion and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0320467A true JPH0320467A (en) | 1991-01-29 |
| JP2620971B2 JP2620971B2 (en) | 1997-06-18 |
Family
ID=14320176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1102168A Expired - Fee Related JP2620971B2 (en) | 1989-02-23 | 1989-04-21 | Diamond coated sintered body with excellent adhesion and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2620971B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997043068A1 (en) * | 1996-05-15 | 1997-11-20 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
| EP0690758A4 (en) * | 1993-11-15 | 1998-02-04 | Rogers Tools | SURFACE DECARBURIZATION OF A TREATED PRIMARY CUT EDGE FOREST |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5529152A (en) * | 1978-08-22 | 1980-03-01 | Matsushita Electric Ind Co Ltd | Wire coiling device |
| JPS6267174A (en) * | 1985-09-19 | 1987-03-26 | Sumitomo Electric Ind Ltd | Manufacturing method of hard carbon film coated cemented carbide |
| JPS6353269A (en) * | 1986-04-24 | 1988-03-07 | Mitsubishi Metal Corp | Cutting tool tip made of diamond coated tungsten carbide-base sintered hard alloy |
| JPS63100182A (en) * | 1986-04-24 | 1988-05-02 | Mitsubishi Metal Corp | Cutting tool tip made of diamond-coated tungsten carbide-based sintered hard alloy |
-
1989
- 1989-04-21 JP JP1102168A patent/JP2620971B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5529152A (en) * | 1978-08-22 | 1980-03-01 | Matsushita Electric Ind Co Ltd | Wire coiling device |
| JPS6267174A (en) * | 1985-09-19 | 1987-03-26 | Sumitomo Electric Ind Ltd | Manufacturing method of hard carbon film coated cemented carbide |
| JPS6353269A (en) * | 1986-04-24 | 1988-03-07 | Mitsubishi Metal Corp | Cutting tool tip made of diamond coated tungsten carbide-base sintered hard alloy |
| JPS63100182A (en) * | 1986-04-24 | 1988-05-02 | Mitsubishi Metal Corp | Cutting tool tip made of diamond-coated tungsten carbide-based sintered hard alloy |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0690758A4 (en) * | 1993-11-15 | 1998-02-04 | Rogers Tools | SURFACE DECARBURIZATION OF A TREATED PRIMARY CUT EDGE FOREST |
| EP1203828A1 (en) * | 1993-11-15 | 2002-05-08 | Rogers Tool Works, Inc. | Surface decarburization of a drill bit having a refined primary cutting edge |
| EP1205563A1 (en) * | 1993-11-15 | 2002-05-15 | Rogers Tool Works, Inc. | Surface decarburization of a drill bit having a refined primary cutting edge |
| WO1997043068A1 (en) * | 1996-05-15 | 1997-11-20 | Kennametal Inc. | Diamond coated cutting member and method of making the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2620971B2 (en) | 1997-06-18 |
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