JPH0320808B2 - - Google Patents
Info
- Publication number
- JPH0320808B2 JPH0320808B2 JP7117584A JP7117584A JPH0320808B2 JP H0320808 B2 JPH0320808 B2 JP H0320808B2 JP 7117584 A JP7117584 A JP 7117584A JP 7117584 A JP7117584 A JP 7117584A JP H0320808 B2 JPH0320808 B2 JP H0320808B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- magnetic
- thin film
- magnetic pole
- magnetic head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 11
- 229910010272 inorganic material Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 150000002484 inorganic compounds Chemical class 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910000702 sendust Inorganic materials 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Magnetic Heads (AREA)
Description
【発明の詳細な説明】
〔技術分野〕
本発明は磁気ヘツドの磁極の形成方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method of forming a magnetic pole of a magnetic head.
従来、磁気ヘツド例えば薄膜磁気ヘツドを構成
する軟磁性薄膜としてはNiとFeを主成分とする
パーマロイ系合金薄膜が用いられていたが、パー
マロイ系磁性薄膜よりも飽和磁化が大きく、高周
波での透磁率が大きいCo系非晶質磁性薄膜を用
いることによつて高速、高密度記録が行いやすく
なる。
Conventionally, permalloy alloy thin films containing Ni and Fe as the main components have been used as soft magnetic thin films constituting magnetic heads, such as thin-film magnetic heads. By using a Co-based amorphous magnetic thin film with high magnetic flux, high-speed, high-density recording becomes easier.
Co系非晶質磁性薄膜の中には、王水のように
強いエツチング液でしかエツチングされないもの
があり、薄膜磁気ヘツドを構成する他の膜をそこ
ねてしまうので、化学的にCo系非晶質磁性薄膜
をエツチングして薄膜磁気ヘツドの磁極を形成す
ることは実用上難かしい場合がある。 Some Co-based amorphous magnetic thin films can only be etched with strong etching solutions such as aqua regia, which will damage other films that make up the thin-film magnetic head, so chemically It may be difficult in practice to form the magnetic poles of a thin film magnetic head by etching a crystalline magnetic thin film.
Co系非晶質磁性薄膜のパターンを形成する他
の方法として、イオンによつて物理的にエツチン
グを行うイオンミリング法、あるいは、リフトオ
フ法がある。 Other methods for forming a pattern on a Co-based amorphous magnetic thin film include an ion milling method in which physical etching is performed using ions, and a lift-off method.
イオンミリングは装置が高価であり、また、エ
ツチング速度が遅いという欠点がある。また、リ
フトオフ法は、第１図ａに示すように、例えばレ
ジスト１−２でパターンを形成した後、薄膜１−
３を付着させて、その後、段差部１−４の段差被
膜性の悪いところからレジスト１−２を除去する
液体をしみこませてレジスト１−２とともにレジ
スト上の薄膜１−３も除去して必要な薄膜パター
ン１−５を残す（第１図ｂ）ものである。しか
し、このリフトオフ法は第２図に示すような、必
要なパターン２−２のピツチＰが小さい場合には
有効であるが、薄膜磁気ヘツドのように磁極のピ
ツチＰが１〜２mmの場合には、段差被膜部２−４
からのしみこみがレジスト層２−３全体に行き渡
りにくいため、リフトオフに時間がかかるという
問題があつた。 Ion milling has the drawbacks of expensive equipment and slow etching speed. In addition, in the lift-off method, as shown in FIG. 1a, for example, after forming a pattern with a resist 1-2,
3 is applied, and then a liquid for removing resist 1-2 is soaked into the part of the step portion 1-4 where the film quality is poor, and the thin film 1-3 on the resist is also removed along with the resist 1-2. This leaves a thin film pattern 1-5 (FIG. 1b). However, this lift-off method is effective when the pitch P of the required pattern 2-2 is small, as shown in Figure 2, but when the pitch P of the magnetic poles is 1 to 2 mm, such as in a thin film magnetic head. is the stepped coating portion 2-4
There was a problem that it took a long time to lift off because it was difficult for the seepage to spread throughout the resist layer 2-3.
本発明はかかる問題を解決するもので、従来の
リフトオフ用パターンにマスクを重ねて、不必要
な部分に付着する薄膜を遮へいして、効率のよい
リフトオフ法によつて磁気ヘツドの磁極を形成す
ることを目的とする。
The present invention solves this problem by overlaying a mask on the conventional lift-off pattern to shield the thin film that adheres to unnecessary areas, and forming the magnetic pole of the magnetic head using an efficient lift-off method. The purpose is to
本発明の磁気ヘツドの製造方法は、
軟磁性薄膜、絶縁膜および導体薄膜などを積層
してなる磁気ヘツドの製造方法において、
基板上に有機物又は無機物よりなるレジストの
パターンを形成する工程と、
前記レジストパターンを形成する工程により残
存したレジスト上に、前記レジストよりはみ出さ
ないマスクを載置して、金属又は無機化合物をス
パツタさせる工程と、
前記スパツタ工程ののち、前記マスクを除去
し、前記レジストと前記レジストに付着した金属
又は無機化合物をともに除去することを特徴とす
る。
The method of manufacturing a magnetic head of the present invention includes the steps of: forming a resist pattern made of an organic or inorganic material on a substrate; A step of sputtering a metal or inorganic compound by placing a mask that does not protrude beyond the resist on the resist remaining from the step of forming a resist pattern; After the sputtering step, removing the mask and removing the mask from the resist. and the metal or inorganic compound attached to the resist are removed.
実施例 １
以下、本発明について実施例に基づき詳細に説
明する。Example 1 Hereinafter, the present invention will be described in detail based on Examples.
実施例 １
第３図ａは基板３−１上にレジスト３−２でパ
ターンを形成したものであり、必要となる磁極の
部分３−３だけレジスト３−２を除去したもので
ある。レジスト３−２のかわりに、ポリイミドな
どの有機物、Al、SiO2などの無機物、あるいは
それらの積層膜を用いても良い。Example 1 FIG. 3a shows a pattern formed using a resist 3-2 on a substrate 3-1, and the resist 3-2 is removed only from the required magnetic pole portion 3-3. Instead of the resist 3-2, an organic material such as polyimide, an inorganic material such as Al or SiO2 , or a laminated film thereof may be used.
続いて、第３図ｂに示すようにステンレスで作
つたマスク３−４を配置する。このマスクは水
晶、ガラスなどの無機物、あるいはポリイミドな
どの有機物でも良い。 Subsequently, a mask 3-4 made of stainless steel is placed as shown in FIG. 3b. This mask may be made of an inorganic material such as crystal or glass, or an organic material such as polyimide.
次に第３図ｃに示すように薄膜磁気ヘツドの磁
極となるCo−Zr−Nb3−５をスパツタ法で付着
させる。本実施例ではCo系非晶質磁性薄膜とし
てCo−Zr−Nbを用いたが他の成分の膜でも同様
にできる。また、薄膜の付着方法も、スパツタ法
に限らず蒸着などでも良い。 Next, as shown in FIG. 3c, Co--Zr--Nb3-5, which will become the magnetic pole of the thin film magnetic head, is deposited by sputtering. In this embodiment, Co--Zr--Nb was used as the Co-based amorphous magnetic thin film, but films of other components may also be used. Furthermore, the method of depositing the thin film is not limited to the sputtering method, but may also be vapor deposition or the like.
次に第３図ｄに示すように、マスク３−４を取
り去る。このとき３−６の部分はレジスト３−２
が露出していることとなる。 The mask 3-4 is then removed, as shown in FIG. 3d. At this time, the part 3-6 is resist 3-2
is exposed.
続いて、第３図ｅに示すように、レジスト３−
２を剥離する液体３−７中にひたして、レジスト
とレジストに一部付着したCo−Zr−Nbも同時に
除去する。この場合、剥離液３−７のかわりに酸
素プラズマのような気体でも良い。また、レジス
ト３−２のかわりに他の有機物あるいは無機物を
用いていれば、それらを溶かす液体あるいは気体
中にさらせば良い。 Subsequently, as shown in FIG. 3e, resist 3-
2 is immersed in a stripping liquid 3-7 to simultaneously remove the resist and Co--Zr--Nb partially attached to the resist. In this case, a gas such as oxygen plasma may be used instead of the stripping liquid 3-7. Furthermore, if other organic or inorganic substances are used instead of the resist 3-2, they may be exposed to a liquid or gas that dissolves them.
レジスト３−２を剥離することによつて、レジ
スト３−２の上に付着している磁性薄膜３−８も
除去され、第３図ｆに示すように磁極となる部分
３−３だけに磁性薄膜が残ることとなる。 By peeling off the resist 3-2, the magnetic thin film 3-8 adhering to the resist 3-2 is also removed, and as shown in FIG. A thin film will remain.
以上述べてきた工程によつて薄膜磁気ヘツドの
磁極の形成を行うことができる。 The magnetic pole of the thin film magnetic head can be formed by the steps described above.
実施例 ２
薄膜磁気ヘツドの磁極を軟磁性薄膜と絶縁膜の
積層構造にすることによつて、抗磁力、高周波領
域での透磁率などの軟磁気特性が向上する。積層
構造の磁極を形成する場合にも本発明のリフトオ
フ法が応用できる。第４図ａに示すように、Co
−Zr−Nb４−２を2000Å、SiO2４−３を1000
Å、交互に積層して全体の厚みを約2μｍとした。
その後、レジスト４−４を剥離して第４図ｂに示
すように磁極４−５を形成する。Example 2 By forming the magnetic pole of a thin film magnetic head into a laminated structure of a soft magnetic thin film and an insulating film, soft magnetic properties such as coercive force and magnetic permeability in a high frequency region are improved. The lift-off method of the present invention can also be applied to the case of forming a magnetic pole having a laminated structure. As shown in Figure 4a, Co
-Zr-Nb4-2 at 2000Å, SiO 2 4-3 at 1000Å
Å, the total thickness was about 2 μm by laminating them alternately.
Thereafter, the resist 4-4 is peeled off to form a magnetic pole 4-5 as shown in FIG. 4b.
なお、薄膜磁気ヘツドの磁極としてセンダスト
系の磁性体も利用でき、本発明の製造方法を用い
れば、センダスト系磁性体の磁極を形成すること
ができる。もちろん、パーマイロ系、あるいは、
その他の磁性体を用いることができる。 Incidentally, a Sendust-based magnetic material can also be used as the magnetic pole of the thin-film magnetic head, and by using the manufacturing method of the present invention, the magnetic pole of the Sendust-based magnetic material can be formed. Of course, permilo type or
Other magnetic materials can be used.
また、従来の薄膜磁気ヘツドに限らず、垂直磁
気記録用の薄膜磁気ヘツドの磁極の形成にも応用
できる。 Furthermore, the present invention can be applied not only to conventional thin-film magnetic heads but also to the formation of magnetic poles of thin-film magnetic heads for perpendicular magnetic recording.
以上述べてきたように、本発明によれば、化学
的にエツチングできない磁性薄膜のパターン形成
でも、例えばプラズマのような高価な装置を用い
ることなくレジストパターン形成のみの簡便な方
法で行うことができる。また、レジスト３−２あ
るいはレジストのかわりに用いる有機物、無機物
の層あるいはそれらの積層膜が露出している部分
３−６があるため、レジスト３−２等の剥離が行
いやすく、従来のリフトオフ法に比べて効率のよ
くリフトオフを行うことができる。
As described above, according to the present invention, pattern formation of a magnetic thin film that cannot be chemically etched can be performed simply by forming a resist pattern without using expensive equipment such as plasma. . In addition, since there is a portion 3-6 where the resist 3-2, an organic material layer, an inorganic material layer used in place of the resist, or a laminated film thereof is exposed, it is easy to remove the resist 3-2, etc., and the conventional lift-off method is Lift-off can be performed more efficiently compared to
一方、レジスト３−２あるいはそれにかわる膜
の段差部３−９をマスクの大きさを変えて形状を
制御することができるので、第５図に示すよう
に、磁極５−２の段差部５−３に所望の傾斜をつ
けることが容易にできる。薄膜磁気ヘツドにおい
ては、電流を流す導体薄膜５−４が絶縁膜５−５
を介して磁極５−２の上に配置されるが、磁極５
−２の段差部５−３が急峻であると、導体薄膜５
−４の段差部５−６が非常に薄くなつたり、ある
いは断線してしまう。従つて、磁極５−２の段差
部５−３に傾斜をつけることが必要となり、この
点においても、本発明によれば磁極５−２の段差
部５−３に傾斜をつけて段差部が薄くなることを
容易に防止できるという効果を有する。 On the other hand, since the shape of the stepped portion 3-9 of the resist 3-2 or a film replacing it can be controlled by changing the size of the mask, the stepped portion 5-9 of the magnetic pole 5-2 can be controlled as shown in FIG. 3 can be easily given a desired slope. In the thin film magnetic head, the conductive thin film 5-4 through which current flows is formed by the insulating film 5-5.
is placed above the magnetic pole 5-2 through the magnetic pole 5-2.
If the stepped portion 5-3 of -2 is steep, the conductive thin film 5
-4 step portion 5-6 becomes very thin or breaks. Therefore, it is necessary to slope the stepped portion 5-3 of the magnetic pole 5-2, and in this regard, according to the present invention, the stepped portion 5-3 of the magnetic pole 5-2 is sloped so that the stepped portion is It has the effect of easily preventing thinning.
第１図ａ，ｂ、第２図は従来のリフトオフ法を
説明する断面図である。第３図ａ〜ｆは本発明の
磁極形成方法の第１の実施例を示す断面図であ
り、第４図ａ，ｂは本発明の第２の実施例を示す
断面図である。第５図は薄膜磁気ヘツドの一部の
断面図である。
１−１……基板、１−２……レジスト、１−３
……軟磁性薄膜、１−４……段差被膜部、１−５
……磁極、２−１……基板、２−２……磁極、２
−３……レジスト、２−４……段差被膜部、Ｐ…
…パターンピツチ、３−１……基板、３−２……
レジスト、３−３……磁極、３−４……マスク、
３−５……軟磁性薄膜、３−６……レジスト露出
部、３−７……レジスト剥離液、３−８……軟磁
性薄膜、３−９……レジスト段差部、４−１……
基板、４−２……軟磁性薄膜、４−３……絶縁
膜、４−４……レジスト、４−５……磁極、５−
１……基板、５−２……磁極、５−３……磁極段
差部、５−４……導体薄膜、５−５……絶縁膜、
５−６……導体薄膜段差部。
FIGS. 1A and 1B and FIG. 2 are cross-sectional views illustrating the conventional lift-off method. 3a to 3f are sectional views showing a first embodiment of the magnetic pole forming method of the present invention, and FIGS. 4a and 4b are sectional views showing a second embodiment of the present invention. FIG. 5 is a cross-sectional view of a portion of the thin film magnetic head. 1-1...Substrate, 1-2...Resist, 1-3
... Soft magnetic thin film, 1-4 ... Step coating part, 1-5
...Magnetic pole, 2-1...Substrate, 2-2...Magnetic pole, 2
-3...Resist, 2-4...Step coating portion, P...
...Pattern pitch, 3-1...Substrate, 3-2...
Resist, 3-3...Magnetic pole, 3-4...Mask,
3-5...Soft magnetic thin film, 3-6...Resist exposed portion, 3-7...Resist stripping liquid, 3-8...Soft magnetic thin film, 3-9...Resist stepped portion, 4-1...
Substrate, 4-2...Soft magnetic thin film, 4-3...Insulating film, 4-4...Resist, 4-5...Magnetic pole, 5-
1...Substrate, 5-2...Magnetic pole, 5-3...Magnetic pole step, 5-4...Conductor thin film, 5-5...Insulating film,
5-6... Conductor thin film step portion.
Claims (1)
層してなる磁気ヘツドの製造方法において、 基板上に有機物又は無機物よりなるレジストの
パターンを形成する工程と、 前記レジストパターンを形成する工程により残
存したレジスト上に、前記レジストよりはみ出さ
ないマスクを載置して、金属又は無機化合物をス
パツタさせる工程と、 前記スパツタ工程ののち、前記マスクを除去
し、前記レジストと前記レジストに付着した金属
又は無機化合物をともに除去することを特徴とす
る磁気ヘツドの製造方法。[Claims] 1. A method for manufacturing a magnetic head formed by laminating a soft magnetic thin film, an insulating film, a conductive thin film, etc., comprising: forming a resist pattern made of an organic or inorganic material on a substrate; A step of sputtering a metal or an inorganic compound by placing a mask that does not protrude beyond the resist on the resist remaining from the forming step; After the sputtering step, removing the mask and removing the resist and the resist. 1. A method for manufacturing a magnetic head, characterized in that metals or inorganic compounds adhering to the magnetic head are removed together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7117584A JPS60214408A (en) | 1984-04-10 | 1984-04-10 | Magnetic head manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7117584A JPS60214408A (en) | 1984-04-10 | 1984-04-10 | Magnetic head manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60214408A JPS60214408A (en) | 1985-10-26 |
| JPH0320808B2 true JPH0320808B2 (en) | 1991-03-20 |
Family
ID=13453060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7117584A Granted JPS60214408A (en) | 1984-04-10 | 1984-04-10 | Magnetic head manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60214408A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01243212A (en) * | 1988-03-24 | 1989-09-27 | Fujitsu Ltd | Manufacture of thin film magnetic head |
-
1984
- 1984-04-10 JP JP7117584A patent/JPS60214408A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60214408A (en) | 1985-10-26 |
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