JPH0320943A - Scanning electron microscope - Google Patents
Scanning electron microscopeInfo
- Publication number
- JPH0320943A JPH0320943A JP1155408A JP15540889A JPH0320943A JP H0320943 A JPH0320943 A JP H0320943A JP 1155408 A JP1155408 A JP 1155408A JP 15540889 A JP15540889 A JP 15540889A JP H0320943 A JPH0320943 A JP H0320943A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- scanning electron
- electron microscope
- vacuum container
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 claims abstract description 7
- 238000010894 electron beam technology Methods 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 6
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 108010083687 Ion Pumps Proteins 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、走査電子顕微鏡に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a scanning electron microscope.
従来の技術
超ＬＳＩ装置の微細化，高集積化に伴い多くのプロセス
技術が開発されて＞ｐ、これらのグロセス技術の評価解
析する技術も求められている。従来、半導体装置の表面
観察または断面構造観察，寸法測定に走査電子顕微鏡は
その操作の容易さ、試料作或の容易さにより、広く用い
られてきた。BACKGROUND OF THE INVENTION Many process technologies have been developed with the miniaturization and high integration of VLSI devices, and there is also a need for technology to evaluate and analyze these process technologies. Conventionally, scanning electron microscopes have been widely used for surface observation, cross-sectional structure observation, and dimension measurement of semiconductor devices due to their ease of operation and sample preparation.
以下、従来の走査電子顕微鏡について説明する。A conventional scanning electron microscope will be explained below.
第２図は従来の走査電子顕微鏡の概略図である。FIG. 2 is a schematic diagram of a conventional scanning electron microscope.
電子銃部１，鏡体部２．試料室３，試料交換室４，試料
移動棒６，イオンポンプ８，ターボ分子ポンプ７，ロー
タリーポンプ８．エアーロックパルプ９，粗排気パルブ
１０，！Ｊ−クバルプ１１，ビラ二真空計１２，ペニン
グ真空計１３の構戊からなっている。Electron gun section 1, mirror body section 2. Sample chamber 3, sample exchange chamber 4, sample moving rod 6, ion pump 8, turbo molecular pump 7, rotary pump 8. Airlock pulp 9, rough exhaust pulp 10,! It consists of a J-Kvalp 11, a Birani vacuum gauge 12, and a Penning vacuum gauge 13.
以上のように構威された走査電子顕微鏡について、以下
その動作を説明する。試料１４を試料交換室４に設置し
、ロータリーポンプ８によシ真空度１ ０−３Ｔｏｒｒ
ｉで排気後、試料交換棒６により試料を１０Ｔｏｒｒ
ｏ高真空状態の試料室３内に設置し、試料表面の二次
電子像を観察する。金属または半導体などの導電性材料
は、試料処理することなく、試料表面を観察できるが、
生物細胞やフォトレジストなどの非導電性材料や帯電し
やすい材料は二次電子像をみるため、金，白金などの導
電物を試料表面に真空蒸着する必要がある。また、試料
室内の真空度が低い場合や試料表面が清浄でない場合、
試料の電子ビーム照射部分にカーボンが吸着し、二次電
子像が暗〈なるという現像が現われる。そのため、一旦
試料を取シ出し、酸素プラズマエッチングを釦とない、
カーボンの吸着を取シ除く必要がある。The operation of the scanning electron microscope configured as described above will be explained below. The sample 14 is placed in the sample exchange chamber 4, and the vacuum level is 10-3 Torr using the rotary pump 8.
After evacuation with i, the sample was heated to 10 Torr using the sample exchange rod 6.
o It is installed in the sample chamber 3 in a high vacuum state, and the secondary electron image of the sample surface is observed. For conductive materials such as metals or semiconductors, the sample surface can be observed without sample processing.
In order to see secondary electron images of non-conductive materials and materials that easily charge, such as biological cells and photoresists, it is necessary to vacuum-deposit a conductive material such as gold or platinum onto the sample surface. Also, if the degree of vacuum in the sample chamber is low or the sample surface is not clean,
Carbon is adsorbed to the part of the sample irradiated with the electron beam, resulting in a darkening of the secondary electron image. Therefore, once the sample is removed, oxygen plasma etching is not performed.
It is necessary to remove carbon adsorption.
発明が解決しようとする課題
しかしながら上記の従来の構或では、非導電性材料や帯
電しやすい材料の二次電子像を観察する場合や試料が帯
電して二次電子像が見にくくなった場合、試料を一旦、
走査電子顕微鏡から取シ出して、真空蒸着装置によシ、
試料表面に導電膜を蒸着していたので、再び二次電子像
を観察するまでに長時間を用するという問題を有してい
た。また、電子線照射部分にカーボンが吸着し二次電子
像が暗くなり、コントラストが低下した場合、試料を一
旦取シ出し、プラズマエノチング装置によシ、電子線照
射部のカーボンを取シ除いていたが、この方法では、プ
ラズマエッチング後、試料を再び大気中にさらすため、
試料表面が汚染されるという問題を有していた。Problems to be Solved by the Invention However, with the above conventional structure, when observing a secondary electron image of a non-conductive material or a material that is easily charged, or when the sample is charged and the secondary electron image becomes difficult to see, Once the sample is
Take it out from the scanning electron microscope and put it into a vacuum evaporator.
Since a conductive film was deposited on the surface of the sample, there was a problem in that it took a long time to observe the secondary electron image again. In addition, if carbon is adsorbed to the electron beam irradiated area and the secondary electron image becomes dark and the contrast decreases, take out the sample and place it in a plasma enoching device to remove the carbon from the electron beam irradiated area. However, with this method, the sample is exposed to the atmosphere again after plasma etching.
There was a problem that the sample surface was contaminated.
本発明は、上記従来の問題点を解決するもので、試料処
理の短時間化を可能にし、試料の清浄表面観察を実現す
ることのできる走査電子顕微鏡を提供することを目的と
する。The present invention solves the above-mentioned conventional problems, and aims to provide a scanning electron microscope that can shorten sample processing time and realize clean surface observation of a sample.
課題を解決するための手段
この目的を達戒するために本発明の走査電子顕微鏡は、
走査電子顕微鏡と導電膜の蒸着もしくはプラズマエッチ
ングの機能を備えている。Means for Solving the Problems In order to achieve this objective, the scanning electron microscope of the present invention has the following features:
It is equipped with scanning electron microscopy and conductive film deposition or plasma etching capabilities.
作 用
との構或によって、試料の表面観察と表面処理が連続的
にできるため、試料処理の短時間化と試料の大気中での
汚染化を防止できる。Due to this structure, surface observation and surface treatment of the sample can be performed continuously, thereby shortening the sample processing time and preventing contamination of the sample in the atmosphere.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図は本発明の走査電子顕微鏡の概略図である。第１
図において、１は電子銃部、２は鏡体、３は試料室、４
は試料交換室、５ぱ試料移動棒、ｅはイオンポンプ、７
はターボ分子ポンプ、８はロータリーポンプ、９はエア
ーロックバルプ、１０は粗排気パルプ、１１はリークパ
ルブ、１２はピラニ真空計、１３はペニング真空計、１
６はステンレス製真空容器、１６はガス導入口、１７は
ガス排気口、１８．１９は平行板電極、２ｏはＲＦ電力
、２１は蒸着源、２２は蒸着源用電源、２３は水晶振動
子膜厚計を示している。以上のように構或された走査電
子顕微鏡について、以下その動作を説明する。まず試料
が帯電して、二次電子像が見にく〈なった場合を説明す
る。二次電子像観察中、試料が帯電しはじめたら、ゲー
トパｌレプ９を開けることによシ、試料室３から試料１
４を１ ０＝ Ｔｏｒｒｏ高真空状態のステンレス製真
空容器１６に試料移動棒６によシ移動し設置する。ステ
ンレス製真空容器１６内で、試料表面に、発着源２１に
よシ、導電膜を蒸着する。な釦導電膜の膜厚は水晶振動
子膜厚計２３によシ、蒸着中に測定される。導電膜蒸着
後、エアーロックバノレプ９を開けることによシ、試料
１４を試料室３内に移動させ、再び二次電子像を観察す
る。以上のように本実施例によれば、走査電子顕微鏡に
隣接したステンレス製真空容器１６内で導電膜を蒸着で
きるため、試料処理の短時間化が可能である。FIG. 1 is a schematic diagram of a scanning electron microscope of the present invention. 1st
In the figure, 1 is the electron gun section, 2 is the mirror body, 3 is the sample chamber, and 4
is the sample exchange room, 5 is the sample moving rod, e is the ion pump, 7
is a turbo molecular pump, 8 is a rotary pump, 9 is an airlock valve, 10 is a rough exhaust pulp, 11 is a leak valve, 12 is a Pirani vacuum gauge, 13 is a Penning vacuum gauge, 1
6 is a stainless steel vacuum container, 16 is a gas inlet, 17 is a gas exhaust port, 18.19 is a parallel plate electrode, 2o is RF power, 21 is a deposition source, 22 is a power source for the deposition source, 23 is a crystal resonator membrane It shows the thickness gauge. The operation of the scanning electron microscope constructed as described above will be explained below. First, we will explain the case where the sample becomes electrically charged and the secondary electron image becomes difficult to see. During secondary electron image observation, if the sample begins to be charged, open the gate panel 9 to remove the sample 1 from the sample chamber 3.
4 was moved by the sample moving rod 6 and placed in a stainless steel vacuum container 16 in a 10=Torro high vacuum state. A conductive film is deposited on the surface of the sample in a stainless steel vacuum container 16 using a deposition source 21 . The film thickness of the button conductive film is measured during vapor deposition using a crystal resonator film thickness meter 23. After the conductive film is deposited, the sample 14 is moved into the sample chamber 3 by opening the air lock vane 9, and the secondary electron image is observed again. As described above, according to this embodiment, since the conductive film can be deposited in the stainless steel vacuum container 16 adjacent to the scanning electron microscope, the sample processing time can be shortened.
次に、本発明の他の実施例について、第２図を参照しな
がら説明する。Next, another embodiment of the present invention will be described with reference to FIG.
試料表面にカーボンが吸着し、二次電子像が暗くなった
場合、エアーロックパルプ９を開け、試料を試料室３か
ら真空容器１５に移動し設置する。When carbon is adsorbed to the sample surface and the secondary electron image becomes dark, the airlock pulp 9 is opened and the sample is moved from the sample chamber 3 to the vacuum container 15 and placed there.
ガス導入口１６から酸素ガスを流入し、ＲＦ放電により
、解離，生成した酸素プラズマによシ、カーボンを除去
する。プラズマエッチング中ハ、パノレプ２４は閉じ、
ガス排気口１７を通じて、酸素ガスはロータリポンプ８
により排気される。プラズマエッチ終了後、バノレプ２
４を開け、真空容器１５内を高真空状態に復帰させた後
、エアーロノクパルプ９を開け、再び試料室３内に試料
を移動し、二次電子像を観察する。以上のように本実施
例によれば真空容器１６を設けたことによシ、試料処理
の短時間化と試料の大気中での汚染化を防止することが
できた。Oxygen gas is introduced from the gas inlet 16, and carbon is removed by dissociation and generated oxygen plasma by RF discharge. During plasma etching, the panorep 24 is closed,
Oxygen gas is supplied to the rotary pump 8 through the gas exhaust port 17.
Exhausted by. After finishing the plasma etch, Vanolep 2
4 is opened to return the inside of the vacuum container 15 to a high vacuum state, the Aeronoque pulp 9 is opened, the sample is moved into the sample chamber 3 again, and the secondary electron image is observed. As described above, according to this embodiment, by providing the vacuum container 16, it was possible to shorten the sample processing time and prevent the sample from becoming contaminated in the atmosphere.
発明の効果
以上説明したように、本発明によれば、試料処理から二
次電子像観察１での時間が短縮できるとともに、試料を
大気中にさらす時間が短縮化され、試料表面の汚染防止
ができる。Effects of the Invention As explained above, according to the present invention, the time from sample processing to secondary electron image observation 1 can be shortened, the time for exposing the sample to the atmosphere can be shortened, and contamination of the sample surface can be prevented. can.
第１図は本発明の実施例にかかる走査電子顕微鏡を示す
断面図、第２図は従来の走査電子顕微鏡を示す断面図で
ある。
１・・・・・・電子銃部、２・・・・・・鏡体、３・・
・・・・試料室、４・・・・・・試料交換室、６・・・
・・・試料移動棒、６・・・・・・イオンポンプ、７・
・・・・・ターボ分子ポンプ、８・・・・・・ロータリ
ーポンプ、９・・・・・・エアーロックバルプ、１０・
・・・・・粗排気バルブ、１１・・・・・・リークバノ
レプ、１２・・・・・・ピラニ真空計、１３・・・・・
・ペニング真空計、１４・・・・・・試料、１６・・・
・・・ステンレス製真空容器、１６・・・・・・ガス導
入口、１７・・・・・・ガス排気口、１ ８ ． １９
・・・・・・平行板電極、２ｏ・・・・・・ＲＦ電源、
２１・・・・・・蒸着源、２２・・・・・・蒸着用電源
、２３・・・・・・水晶振動子膜厚計２４・・・・・・
ターボ分子ポンプ側バｐプ。FIG. 1 is a sectional view showing a scanning electron microscope according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional scanning electron microscope. 1...Electron gun section, 2...Mirror body, 3...
...Sample room, 4...Sample exchange room, 6...
...Sample moving rod, 6...Ion pump, 7.
...Turbo molecular pump, 8...Rotary pump, 9...Air lock valve, 10.
...Rough exhaust valve, 11...Leak vanor, 12...Pirani vacuum gauge, 13...
・Penning vacuum gauge, 14... Sample, 16...
... Stainless steel vacuum container, 16... Gas inlet, 17... Gas exhaust port, 1 8. 19
...Parallel plate electrode, 2o...RF power supply,
21... Vapor deposition source, 22... Vapor deposition power supply, 23... Quartz crystal resonator film thickness meter 24...
Turbo molecular pump side bap.
Claims (2)
面から放出される二次電子または反射電子を検出増幅し
、試料上の走査と同期して観察用ブラウン管上で走査し
輝度変調して表示する走査電子顕微鏡において、走査電
子顕微鏡部とゲートバルブを介して、真空容器が接続さ
れていることを特徴とする走査電子顕微鏡。(1) Focus the electron beam narrowly and scan it over the sample, detect and amplify the secondary electrons or reflected electrons emitted from the sample surface, and scan on the observation cathode ray tube in synchronization with the scanning on the sample to modulate the brightness. 1. A scanning electron microscope for displaying images, characterized in that a scanning electron microscope section is connected to a vacuum container via a gate valve.
装置を備えているということを特徴とする特許請求の範
囲第１項記載の走査電子顕微鏡。(2) The scanning electron microscope according to claim 1, wherein the vacuum vessel is equipped with a vapor deposition device or a plasma etching device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155408A JPH0320943A (en) | 1989-06-16 | 1989-06-16 | Scanning electron microscope |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1155408A JPH0320943A (en) | 1989-06-16 | 1989-06-16 | Scanning electron microscope |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0320943A true JPH0320943A (en) | 1991-01-29 |
Family
ID=15605331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1155408A Pending JPH0320943A (en) | 1989-06-16 | 1989-06-16 | Scanning electron microscope |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0320943A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170345627A1 (en) * | 2016-05-27 | 2017-11-30 | Fei Company | Charged-particle microscope with in situ deposition functionality |
-
1989
- 1989-06-16 JP JP1155408A patent/JPH0320943A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170345627A1 (en) * | 2016-05-27 | 2017-11-30 | Fei Company | Charged-particle microscope with in situ deposition functionality |
| US10475629B2 (en) * | 2016-05-27 | 2019-11-12 | Fei Company | Charged-particle microscope with in situ deposition functionality |
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